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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTH10N100D2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixth10n100d2-datasheets-7031.pdf | TO-247-3 | 3 | 24 Weeks | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 695W Tc | N-Channel | 5320pF @ 25V | 1.5 Ω @ 5A, 10V | 10A Tc | 200nC @ 5V | Depletion Mode | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| UF3C065080K4S | UnitedSiC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | SiCFET (Cascode SiCJFET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/unitedsic-uf3c065080k4s-datasheets-7035.pdf | TO-247-4 | 12 Weeks | 650V | 190W Tc | N-Channel | 1500pF @ 100V | 100m Ω @ 20A, 12V | 6V @ 10mA | 31A Tc | 43nC @ 12V | 12V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG050N60E-GE3 | Vishay Siliconix | $8.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg050n60ege3-datasheets-7037.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 278W Tc | N-Channel | 3459pF @ 100V | 50mOhm @ 23A, 10V | 5V @ 250μA | 51A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW43NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | No SVHC | 88mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STW43N | 3 | Single | 255W | 1 | FET General Purpose Power | 30 ns | 40ns | 50 ns | 120 ns | 35A | 25V | SILICON | SWITCHING | 4V | 255W Tc | 600V | N-Channel | 4300pF @ 50V | 88m Ω @ 17.5A, 10V | 5V @ 250μA | 35A Tc | 145nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| IXTP36P15P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixtp36p15p-datasheets-7043.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 3 | Single | 300W | 1 | Other Transistors | R-PSFM-T3 | 31ns | 15 ns | 36 ns | 36A | 20V | SILICON | DRAIN | SWITCHING | 150V | 300W Tc | TO-220AB | 90A | -150V | P-Channel | 3100pF @ 25V | 110m Ω @ 18A, 10V | 4.5V @ 250μA | 36A Tc | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| STWA40N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stwa40n95k5-datasheets-7045.pdf | TO-247-3 | Lead Free | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STWA40 | NOT SPECIFIED | 38A | 950V | 450W Tc | N-Channel | 3300pF @ 100V | 130m Ω @ 19A, 10V | 5V @ 100μA | 38A Tc | 93nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH96N20P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq96n20p-datasheets-5608.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | No SVHC | 24MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | 30ns | 30 ns | 75 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 5V | 600W Tc | TO-247AD | 225A | 1500 mJ | 200V | N-Channel | 4800pF @ 25V | 24m Ω @ 500mA, 10V | 5V @ 250μA | 96A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| SQD10N30-330H_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqd10n30330hge3-datasheets-5998.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 107W | 175°C | 10 ns | 20 ns | 10A | 30V | 107W Tc | 300V | N-Channel | 2190pF @ 25V | 330m Ω @ 14A, 10V | 4.4V @ 250μA | 10A Tc | 47nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| UF3C065040B3 | UnitedSiC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SiCFET (Cascode SiCJFET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/unitedsic-uf3c065040b3-datasheets-7003.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 650V | 176W Tc | N-Channel | 1500pF @ 100V | 52m Ω @ 30A, 12V | 6V @ 10mA | 41A Tc | 51nC @ 15V | 12V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STWA63N65DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stwa63n65dm2-datasheets-7013.pdf | TO-247-3 | 17 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 650V | 446W Tc | N-Channel | 5500pF @ 100V | 50m Ω @ 30A, 10V | 5V @ 250μA | 60A Tc | 120nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA32P20T | IXYS | $7.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp32p20t-datasheets-5492.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | GULL WING | 3 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 300W Tc | 96A | 0.13Ohm | 1000 mJ | P-Channel | 14500pF @ 25V | 130m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 185nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||
| IXFH16N80P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfh16n80p-datasheets-7014.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | No SVHC | 600MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 460W | 1 | 32ns | 29 ns | 75 ns | 16A | 30V | SILICON | SWITCHING | 5V | 460W Tc | TO-247AD | 800V | N-Channel | 4600pF @ 25V | 600m Ω @ 500mA, 10V | 5V @ 4mA | 16A Tc | 71nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| ZXMN6A09GQTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmn6a09gqta-datasheets-6731.pdf | TO-261-4, TO-261AA | 1 Weeks | 60V | 2W Ta | N-Channel | 1407pF @ 40V | 40m Ω @ 8.2A, 10V | 3V @ 250μA | 5.4A Ta | 24.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW68N60M6-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw68n60m64-datasheets-6950.pdf | TO-247-4 | 12 Weeks | compliant | 600V | 390W Tc | N-Channel | 4360pF @ 100V | 41m Ω @ 31.5A, 10V | 4.75V @ 250μA | 63A Tc | 106nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6500 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/alphaomegasemiconductor-aon6500-datasheets-3528.pdf | 8-PowerSMD, Flat Leads | Lead Free | 18 Weeks | 8 | NOT SPECIFIED | NOT SPECIFIED | 83W | 1 | 200A | 20V | 30V | 7.3W Ta 83W Tc | N-Channel | 7036pF @ 15V | 0.95m Ω @ 20A, 10V | 2V @ 250μA | 71A Ta 200A Tc | 145nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STWA70N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stwa70n60dm2-datasheets-6959.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 7 months ago) | NOT SPECIFIED | STWA70 | NOT SPECIFIED | 600V | 446W Tc | N-Channel | 5508pF @ 100V | 42m Ω @ 33A, 10V | 5V @ 250μA | 66A Tc | 120nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3046 | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk3046-datasheets-6960.pdf | 500V | 8A | TO-220-3 Full Pack | 3 | no | unknown | 8541.29.00.95 | SINGLE | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 70ns | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 2W Ta 40W Tc | TO-220AB | 7A | 14A | 1Ohm | 130 mJ | N-Channel | 1200pF @ 20V | 1 Ω @ 4A, 10V | 5V @ 1mA | 7A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| STF34NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb34nm60nd-datasheets-1665.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 105MOhm | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | STF34N | 3 | Single | 190W | 1 | FET General Purpose Power | 30 ns | 53.4ns | 61.8 ns | 111 ns | 29A | 25V | SILICON | ISOLATED | SWITCHING | 600V | 4V | 40W Tc | TO-220AB | 116A | 650V | N-Channel | 2785pF @ 50V | 110m Ω @ 14.5A, 10V | 5V @ 250μA | 29A Tc | 80.4nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||
| STD9N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp9n65m2-datasheets-5236.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3.949996g | No SVHC | 3 | EAR99 | NOT SPECIFIED | STD9N | 1 | NOT SPECIFIED | 7.5 ns | 6.6ns | 18 ns | 22.5 ns | 5A | 25V | 3V | 60W Tc | 650V | N-Channel | 315pF @ 100V | 900m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 10nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| RSJ250P10FRATL | ROHM Semiconductor | $1.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rsj250p10fratl-datasheets-6805.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | EAR99 | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 50W Ta | 25A | 50A | 0.063Ohm | P-Channel | 8000pF @ 25V | 63m Ω @ 25A, 10V | 2.5V @ 1mA | 25A Ta | 60nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STF42N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb42n65m5-datasheets-5509.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 17 Weeks | No SVHC | 79MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF42N | 3 | Single | 40W | 1 | FET General Purpose Power | 61 ns | 24ns | 13 ns | 65 ns | 33A | 25V | SILICON | ISOLATED | SWITCHING | 4V | 40W Tc | TO-220AB | 950 mJ | 650V | N-Channel | 4650pF @ 100V | 79m Ω @ 16.5A, 10V | 5V @ 250μA | 33A Tc | 100nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||
| STW70N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw70n65m2-datasheets-6988.pdf | TO-247-3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | STW70N | 650V | 446W Tc | N-Channel | 5140pF @ 100V | 46m Ω @ 31.5A, 10V | 4V @ 250μA | 63A Tc | 117nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UJ3C065080T3S | UnitedSiC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | SiCFET (Cascode SiCJFET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/unitedsic-uj3c065080t3s-datasheets-6990.pdf | TO-220-3 | 12 Weeks | 650V | 190W Tc | N-Channel | 1500pF @ 100V | 100m Ω @ 20A, 12V | 6V @ 10mA | 31A Tc | 51nC @ 15V | 12V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW48N60M6-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw48n60m6-datasheets-6833.pdf | TO-247-4 | 12 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 600V | 250W Tc | N-Channel | 2578pF @ 100V | 69m Ω @ 19.5A, 10V | 4.75V @ 250μA | 39A Tc | 57nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL12N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl12n65m2-datasheets-6827.pdf | 8-PowerVDFN | 26 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL12 | 1 | NOT SPECIFIED | 5A | 25V | 650V | 48W Tc | N-Channel | 410pF @ 100V | 750m Ω @ 3A, 10V | 4V @ 250μA | 5A Tc | 12.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP105N60EF-GE3 | Vishay Siliconix | $4.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp105n60efge3-datasheets-6928.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 208W Tc | N-Channel | 1804pF @ 100V | 102mOhm @ 13A, 10V | 5V @ 250μA | 29A Tc | 53nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD30NF03LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std30nf03lt4-datasheets-6616.pdf | 30V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | No SVHC | 25mOhm | 3 | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD30N | 3 | Single | 30 | 50W | 1 | FET General Purpose Power | R-PSSO-G2 | 35 ns | 205ns | 240 ns | 90 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 1.7V | 50W Tc | 30V | N-Channel | 830pF @ 25V | 25m Ω @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 18nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| IXFH46N65X2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/ixys-ixfh46n65x2-datasheets-6858.pdf | TO-247-3 | 19 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 46A | 650V | 660W Tc | N-Channel | 4810pF @ 25V | 76m Ω @ 23A, 10V | 5.5V @ 4mA | 46A Tc | 75nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW63N65DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II Plus | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | compliant | NOT SPECIFIED | STW63N | NOT SPECIFIED | 650V | N-Channel | 65A | 145nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI42N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb42n65m5-datasheets-5509.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 9.35mm | 4.6mm | Lead Free | 3 | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STI42N | 3 | Single | 190W | 1 | FET General Purpose Power | 61 ns | 24ns | 13 ns | 65 ns | 33A | 25V | SILICON | SWITCHING | 4V | 190W Tc | 0.079Ohm | 950 mJ | 650V | N-Channel | 4650pF @ 100V | 4 V | 79m Ω @ 16.5A, 10V | 5V @ 250μA | 33A Tc | 100nC @ 10V | 10V | ±25V |
