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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTH34N65X2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/ixys-ixth34n65x2-datasheets-6886.pdf | TO-247-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 34A | 650V | 540W Tc | N-Channel | 3120pF @ 25V | 105m Ω @ 17A, 10V | 4.5V @ 4mA | 34A Tc | 53nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD3NK100Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf3nk100z-datasheets-8187.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 12 Weeks | No SVHC | 6Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | GULL WING | 260 | STD3N | 3 | Single | 30 | 90W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 7.5ns | 32 ns | 39 ns | 2.5A | 30V | SILICON | SWITCHING | 1000V | 3.75V | 90W Tc | 1kV | N-Channel | 601pF @ 25V | 6 Ω @ 1.25A, 10V | 4.5V @ 50μA | 2.5A Tc | 18nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| STW48N60M6-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw48n60m6-datasheets-6833.pdf | TO-247-4 | 12 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 600V | 250W Tc | N-Channel | 2578pF @ 100V | 69m Ω @ 19.5A, 10V | 4.75V @ 250μA | 39A Tc | 57nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL12N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl12n65m2-datasheets-6827.pdf | 8-PowerVDFN | 26 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL12 | 1 | NOT SPECIFIED | 5A | 25V | 650V | 48W Tc | N-Channel | 410pF @ 100V | 750m Ω @ 3A, 10V | 4V @ 250μA | 5A Tc | 12.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP105N60EF-GE3 | Vishay Siliconix | $4.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp105n60efge3-datasheets-6928.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 208W Tc | N-Channel | 1804pF @ 100V | 102mOhm @ 13A, 10V | 5V @ 250μA | 29A Tc | 53nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD30NF03LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std30nf03lt4-datasheets-6616.pdf | 30V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | No SVHC | 25mOhm | 3 | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD30N | 3 | Single | 30 | 50W | 1 | FET General Purpose Power | R-PSSO-G2 | 35 ns | 205ns | 240 ns | 90 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 1.7V | 50W Tc | 30V | N-Channel | 830pF @ 25V | 25m Ω @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 18nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFH46N65X2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/ixys-ixfh46n65x2-datasheets-6858.pdf | TO-247-3 | 19 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 46A | 650V | 660W Tc | N-Channel | 4810pF @ 25V | 76m Ω @ 23A, 10V | 5.5V @ 4mA | 46A Tc | 75nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW63N65DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II Plus | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | compliant | NOT SPECIFIED | STW63N | NOT SPECIFIED | 650V | N-Channel | 65A | 145nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI42N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb42n65m5-datasheets-5509.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 9.35mm | 4.6mm | Lead Free | 3 | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STI42N | 3 | Single | 190W | 1 | FET General Purpose Power | 61 ns | 24ns | 13 ns | 65 ns | 33A | 25V | SILICON | SWITCHING | 4V | 190W Tc | 0.079Ohm | 950 mJ | 650V | N-Channel | 4650pF @ 100V | 4 V | 79m Ω @ 16.5A, 10V | 5V @ 250μA | 33A Tc | 100nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||
| BUK763R4-30B,118 | Nexperia USA Inc. | $7.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk763r430b118-datasheets-6774.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | D2PAK | 4.951nF | 75A | 30V | 255W Tc | N-Channel | 4951pF @ 25V | 3.4mOhm @ 25A, 10V | 4V @ 1mA | 75A Tc | 75nC @ 10V | 3.4 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4896DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4896dyt1e3-datasheets-8718.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.56W | 1 | FET General Purpose Power | Not Qualified | 17 ns | 11ns | 31 ns | 40 ns | 6.7A | 20V | SILICON | 80V | 2V | 1.56W Ta | N-Channel | 16.5m Ω @ 10A, 10V | 2V @ 250μA (Min) | 6.7A Ta | 41nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| STD95N04 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std95n04-datasheets-6724.pdf | 40V | 80A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | 260 | STD95 | 3 | Single | 30 | 110W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 50ns | 15 ns | 40 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | TO-252AA | 320A | 0.0065Ohm | 400 mJ | 40V | N-Channel | 2200pF @ 25V | 6.5m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| STP190N55LF3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp190n55lf3-datasheets-6793.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3.7Ohm | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STP190 | 3 | Single | 312W | 1 | FET General Purpose Power | R-PSFM-T3 | 20 ns | 40ns | 40 ns | 160 ns | 120A | 18V | SILICON | SWITCHING | 312W Tc | TO-220AB | 480A | 1000 mJ | 55V | N-Channel | 6200pF @ 25V | 3.7m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 80nC @ 5V | 5V 10V | ±18V | ||||||||||||||||||||||||||||||||||||
| STW56N65M2-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw56n65m24-datasheets-6816.pdf | TO-247-4 | 15.9mm | 21.1mm | 5.1mm | 26 Weeks | 4 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW56N | Single | NOT SPECIFIED | FET General Purpose Power | 19 ns | 146 ns | 49A | 25V | 650V | 358W Tc | N-Channel | 3900pF @ 100V | 62m Ω @ 24.5A, 10V | 4V @ 250μA | 49A Tc | 93nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STFH40N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfh40n60m2-datasheets-6819.pdf | TO-220-3 Full Pack | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STFH40N | NOT SPECIFIED | 600V | 40W Tc | N-Channel | 2500pF @ 100V | 88m Ω @ 17A, 10V | 4V @ 250μA | 34A Tc | 57nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STWA48N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stwa48n60m6-datasheets-6826.pdf | TO-247-3 | 16 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 600V | 250W Tc | N-Channel | 2578pF @ 100V | 69m Ω @ 19.5A, 10V | 4.75V @ 250μA | 39A Tc | 57nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA120N60E-GE3 | Vishay Siliconix | $4.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha120n60ege3-datasheets-6831.pdf | TO-220-3 Full Pack | 14 Weeks | TO-220 Full Pack | 600V | 34W Tc | N-Channel | 1562pF @ 100V | 120mOhm @ 12A, 10V | 5V @ 250μA | 25A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW48N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw48n60m6-datasheets-6833.pdf | TO-247-3 | 16 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 600V | 250W Tc | N-Channel | 2578pF @ 100V | 69m Ω @ 19.5A, 10V | 4.75V @ 250μA | 39A Tc | 57nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFW42N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfw42n60m2ep-datasheets-6834.pdf | ISOWATT218FX | Lead Free | 12 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STFW | NOT SPECIFIED | 34A | 600V | 63W Tc | N-Channel | 2370pF @ 100V | 87m Ω @ 17A, 10V | 4V @ 250μA | 34A Tc | 55nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH260N055T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixth260n055t2-datasheets-6837.pdf | TO-247-3 | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 260A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 480W Tc | TO-247AD | 780A | 0.0033Ohm | 600 mJ | N-Channel | 10800pF @ 25V | 3.3m Ω @ 50A, 10V | 4V @ 250μA | 260A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIHA2N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha2n80ege3-datasheets-6696.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 800V | 29W Tc | N-Channel | 315pF @ 100V | 2.75Ohm @ 1A, 10V | 4V @ 250μA | 2.8A Tc | 19.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STWA65N65DM2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stwa65n65dm2ag-datasheets-6843.pdf | TO-247-3 | 17 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 650V | 446W Tc | N-Channel | 5500pF @ 100V | 50m Ω @ 30A, 10V | 5V @ 250μA | 60A Tc | 120nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD11N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std11n60dm2-datasheets-6613.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STD11 | NOT SPECIFIED | 650V | 110W Tc | N-Channel | 614pF @ 100V | 420m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 16.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R060P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r060p7xksa1-datasheets-6855.pdf | TO-220-3 | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 164W Tc | TO-220AB | 151A | 0.06Ohm | 159 mJ | N-Channel | 2895pF @ 400V | 60m Ω @ 15.9A, 10V | 4V @ 800μA | 48A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STB6N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std6n65m2-datasheets-8277.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 26 Weeks | 3.949996g | No SVHC | 3 | EAR99 | NOT SPECIFIED | STB6N | 1 | NOT SPECIFIED | 19 ns | 7ns | 20 ns | 6.5 ns | 4A | 25V | 3V | 60W Tc | 650V | N-Channel | 226pF @ 100V | 1.35 Ω @ 2A, 10V | 4V @ 250μA | 4A Tc | 9.8nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA120P065T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp120p065t-datasheets-5518.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 10MOhm | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 298W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 28ns | 21 ns | 120A | 15V | SILICON | DRAIN | SWITCHING | 65V | 298W Tc | 0.12A | 360A | 1000 mJ | -65V | P-Channel | 13200pF @ 25V | 10m Ω @ 500mA, 10V | 4V @ 250μA | 120A Tc | 185nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||
| SI7615DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7615dnt1ge3-datasheets-6777.pdf | PowerPAK® 1212-8 | 3.3mm | 3.3mm | Lead Free | 5 | 14 Weeks | 3.9MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 30 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 35 ns | 38ns | 28 ns | 80 ns | -35A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 3.7W Ta 52W Tc | 22.6A | 20 mJ | -20V | P-Channel | 6000pF @ 10V | 3.9m Ω @ 20A, 10V | 1.5V @ 250μA | 35A Tc | 183nC @ 10V | 6V 10V | ±12V | |||||||||||||||||||||||||||
| FQB11N40CTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqb11n40ctm-datasheets-6537.pdf | 400V | 10.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 14 hours ago) | yes | EAR99 | FAST SWITCHING | No | GULL WING | Single | 135W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 89ns | 81 ns | 81 ns | 10.5A | 30V | SILICON | DRAIN | SWITCHING | 135W Tc | 42A | 400V | N-Channel | 1090pF @ 25V | 530m Ω @ 5.25A, 10V | 4V @ 250μA | 10.5A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| RSJ400N06FRATL | ROHM Semiconductor | $6.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | EAR99 | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 50W Ta | 40A | 80A | 0.016Ohm | N-Channel | 2400pF @ 10V | 16m Ω @ 40A, 10V | 3V @ 1mA | 40A Ta | 52nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N04S403AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb80n04s403atma1-datasheets-7004.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 16 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 14 ns | 12ns | 16 ns | 80A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 94W Tc | 200 mJ | N-Channel | 5260pF @ 25V | 3.7m Ω @ 80A, 10V | 4V @ 53μA | 80A Tc | 66nC @ 10V | 10V | ±20V |
