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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRLR8729TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irlr8729trpbf-datasheets-9545.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 12 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 55W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 47ns | 10 ns | 11 ns | 58A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55W Tc | TO-252AA | 50A | 260A | 0.0089Ohm | 74 mJ | 30V | N-Channel | 1350pF @ 15V | 8.9m Ω @ 25A, 10V | 2.35V @ 25μA | 58A Tc | 16nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| ZXMN3A01ZTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-zxmn3a01zta-datasheets-9519.pdf | TO-243AA | Lead Free | 3 | 17 Weeks | 130.492855mg | No SVHC | 120mOhm | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | SINGLE | FLAT | 260 | 1 | 40 | 1 | R-PSSO-F3 | 2.6 ns | 4.1ns | 3.6 ns | 13.5 ns | 2.2A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 970mW Ta | 3.3A | 30V | N-Channel | 186pF @ 25V | 120m Ω @ 2.5A, 10V | 1V @ 250μA | 2.2A Ta | 5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDMS7694 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms7694-datasheets-1835.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 26 Weeks | 74mg | No SVHC | 8 | ACTIVE (Last Updated: 19 hours ago) | yes | EAR99 | Tin | No | e3 | DUAL | FLAT | Single | 27W | 1 | FET General Purpose Power | R-PDSO-F5 | 8.4 ns | 2ns | 1.6 ns | 18 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 2V | 2.5W Ta 27W Tc | MO-240AA | 47A | 50A | 0.0095Ohm | 30V | N-Channel | 1410pF @ 15V | 2 V | 9.5m Ω @ 13.2A, 10V | 3V @ 250μA | 13.2A Ta 20A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| RE1L002SNTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | SC-89, SOT-490 | 3 | 16 Weeks | EAR99 | not_compliant | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 150mW Ta | 0.25A | 3.2Ohm | N-Channel | 15pF @ 25V | 2.4 Ω @ 250mA, 10V | 2.3V @ 1mA | 250mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8821EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8821edbt2e1-datasheets-9398.pdf | 4-XFBGA, CSPBGA | Lead Free | 4 | 30 Weeks | Unknown | 4 | yes | EAR99 | No | Pure Matte Tin (Sn) | BOTTOM | BALL | 260 | Single | 30 | 1 | 20ns | 15 ns | 40 ns | -2.3A | 12V | SILICON | SWITCHING | 30V | 30V | -600mV | 500mW Ta | 0.15Ohm | P-Channel | 440pF @ 15V | 135m Ω @ 1A, 4.5V | 1.3V @ 250μA | 17nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTT2N170D2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtt2n170d2-datasheets-9412.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 24 Weeks | unknown | FET General Purpose Power | 28 ns | 58ns | 106 ns | 33 ns | 2A | 20V | Single | 1700V | 568W Tc | 1.7kV | N-Channel | 3650pF @ 25V | 6.5 Ω @ 1A, 0V | 2A Tj | 110nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7403TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7403trpbf-datasheets-8286.pdf | 30V | 8.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 22mOhm | 8 | LOGIC LEVEL COMPATIBLE | Tin | No | DUAL | GULL WING | Single | 2.5W | 1 | 10 ns | 37ns | 40 ns | 42 ns | 8.5A | 20V | 30V | SILICON | 6.3 mm | 1V | 2.5W Ta | 78 ns | 6.7A | 30V | N-Channel | 1200pF @ 25V | 1 V | 22m Ω @ 4A, 10V | 1V @ 250μA | 8.5A Ta | 57nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| DMN2112SN-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn2112sn7-datasheets-9254.pdf | TO-236-3, SC-59, SOT-23-3 | 3.1mm | 1.3mm | 1.7mm | 3 | 19 Weeks | 7.994566mg | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 500mW | 1 | FET General Purpose Powers | 10 ns | 15ns | 65 ns | 75 ns | 1.2A | 8V | 20V | SILICON | SWITCHING | 1.2V | 500mW Ta | 0.25Ohm | 20V | N-Channel | 220pF @ 10V | 1.2 V | 100m Ω @ 500mA, 4.5V | 1.2V @ 1mA | 1.2A Ta | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| FDA24N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fda24n50-datasheets-9288.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 3 | 4 Weeks | 6.401g | No SVHC | 190MOhm | 2 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 270W | 1 | FET General Purpose Power | R-PSFM-T3 | 47 ns | 108ns | 86 ns | 164 ns | 24A | 30V | SILICON | SWITCHING | 5V | 270W Tc | 96A | 500V | N-Channel | 4150pF @ 25V | 190m Ω @ 12A, 10V | 5V @ 250μA | 24A Tc | 85nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IPB048N15N5LFATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb048n15n5lfatma1-datasheets-8954.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 313W Tc | 120A | 480A | 0.0048Ohm | 23 pF | 30 mJ | N-Channel | 380pF @ 75V | 4.8m Ω @ 100A, 10V | 4.9V @ 255μA | 120A | 84nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX46N50L | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixtx46n50l-datasheets-9312.pdf | TO-247-3 | Lead Free | 3 | 24 Weeks | 160mOhm | 3 | yes | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 3 | Single | 700W | 1 | FET General Purpose Power | 50ns | 42 ns | 80 ns | 46A | 30V | SILICON | DRAIN | SWITCHING | 700W Tc | 500V | N-Channel | 7000pF @ 25V | 160m Ω @ 500mA, 20V | 6V @ 250μA | 46A Tc | 260nC @ 15V | 20V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| SPP15P10PLHXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-spp15p10plhxksa1-datasheets-9314.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 128W | 1 | Not Qualified | 7.6 ns | 21ns | 29 ns | 50 ns | 15A | 20V | -100V | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 128W Tc | TO-220AB | 60A | 0.2Ohm | P-Channel | 1490pF @ 25V | 200m Ω @ 11.3A, 10V | 2V @ 1.54mA | 15A Tc | 62nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| DMP56D0UFB-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp56d0ufb7b-datasheets-1490.pdf | 3-UFDFN | 1.08mm | 480μm | 675μm | Lead Free | 15 Weeks | No SVHC | 3 | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | Single | Other Transistors | 4.46 ns | 6.63ns | 15 ns | 21.9 ns | 200mA | 8V | 50V | 425mW Ta | 0.2A | P-Channel | 50.54pF @ 25V | 6 Ω @ 100mA, 4V | 1.2V @ 250μA | 200mA Ta | 0.58nC @ 4V | 2.5V 4V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AO6409A | Alpha & Omega Semiconductor Inc. | $0.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-ao6409a-datasheets-1788.pdf | SC-74, SOT-457 | Lead Free | 16 Weeks | Other Transistors | 5.5A | Single | 20V | 2.1W Ta | P-Channel | 905pF @ 10V | 41m Ω @ 5.5A, 4.5V | 900mV @ 250μA | 5.5A Ta | 11nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RU1C001ZPTL | ROHM Semiconductor | $0.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-ru1c001zptl-datasheets-9201.pdf | SC-85 | Lead Free | 3 | 16 Weeks | 85 | EAR99 | not_compliant | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | R-PDSO-F3 | 100mA | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | 20V | 150mW Ta | 0.1A | P-Channel | 15pF @ 10V | 3.8 Ω @ 100mA, 4.5V | 1V @ 100μA | 100mA Ta | 1.2V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STP45N40DM2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp45n40dm2ag-datasheets-9353.pdf | TO-220-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP45N | NOT SPECIFIED | 38A | 400V | 250W Tc | N-Channel | 2600pF @ 100V | 72m Ω @ 19A, 10V | 5V @ 250μA | 38A Tc | 56nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8823EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si8823edbt2e1-datasheets-9323.pdf | 4-XFBGA | 30 Weeks | EAR99 | 20V | 900mW Tc | P-Channel | 580pF @ 10V | 95m Ω @ 1A, 4.5V | 800mV @ 250μA | 2.7A Tc | 10nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP3085LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp3085lss13-datasheets-9243.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | Lead Free | 8 | 23 Weeks | No SVHC | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | GULL WING | 260 | Single | 30 | 1 | Other Transistors | 4.8 ns | 5ns | 14.6 ns | 31 ns | 3.8A | 20V | SILICON | SWITCHING | 30V | 30V | 1.3W Ta | 0.07Ohm | P-Channel | 563pF @ 25V | 70m Ω @ 5.3A, 10V | 3V @ 250μA | 3.8A Ta | 5.2nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| VS-FB190SA10 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw, Surface Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-vsfb190sa10-datasheets-9374.pdf | SOT-227-4, miniBLOC | 38.3mm | 12.3mm | 25.7mm | 4 | 20 Weeks | 30.000004g | Unknown | 4 | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 568W | 1 | FET General Purpose Power | 45 ns | 351ns | 335 ns | 181 ns | 190A | 20V | SILICON | ISOLATED | SWITCHING | 100V | 3.3V | 568W Tc | 720A | 0.0065Ohm | 700 mJ | N-Channel | 10700pF @ 25V | 3.3 V | 6.5m Ω @ 180A, 10V | 4.35V @ 250μA | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI2321-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/microcommercialco-si2321tp-datasheets-9216.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 22 Weeks | EAR99 | YES | DUAL | GULL WING | 260 | 10 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 350mW Ta | 2.9A | 0.057Ohm | P-Channel | 715pF @ 6V | 110m Ω @ 2.2A, 10V | 900mV @ 250μA | 2.9A Ta | 13nC @ 4.5V | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTR170P10P | IXYS | $18.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtr170p10p-datasheets-9247.pdf | ISOPLUS247™ | Lead Free | 3 | 28 Weeks | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 108A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 312W Tc | 510A | 0.013Ohm | 3500 mJ | P-Channel | 12600pF @ 25V | 13m Ω @ 85A, 10V | 4V @ 1mA | 108A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFA6N120P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfa6n120p-datasheets-9264.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | not_compliant | 8541.90.00.00 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1200V | 250W Tc | 6A | 18A | 0.0024Ohm | N-Channel | 2830pF @ 25V | 2.4 Ω @ 500mA, 10V | 5V @ 1mA | 6A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SSM6K504NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-WDFN Exposed Pad | 6 | 12 Weeks | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N6 | 9A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.25W Ta | 9A | 18A | 0.026Ohm | N-Channel | 620pF @ 15V | 19.5m Ω @ 4A, 10V | 2.5V @ 100μA | 9A Ta | 4.8nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH400N075T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfh400n075t2-datasheets-9152.pdf | TO-247-3 | 3 | 20 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 400A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 1000W Tc | 1000A | 0.0023Ohm | 1500 mJ | N-Channel | 24000pF @ 25V | 2.3m Ω @ 100A, 10V | 4V @ 250μA | 400A Tc | 420nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFN240N25X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfn240n25x3-datasheets-9154.pdf | SOT-227-4, miniBLOC | 19 Weeks | 250V | 695W Tc | N-Channel | 23800pF @ 25V | 4.5m Ω @ 120A, 10V | 4.5V @ 8mA | 240A Tc | 345nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM120P10_10M1LGE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm120p1010m1lge3-datasheets-8835.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 5.08mm | 2 | 12 Weeks | 3 | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 375W | 1 | 175°C | R-PSSO-G2 | 20 ns | 120 ns | -120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 375W Tc | 480A | -100V | P-Channel | 9000pF @ 25V | 10.1m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 190nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NTH027N65S3F-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® II | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/onsemiconductor-nth027n65s3ff155-datasheets-9169.pdf | TO-247-3 | 18 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 595W Tc | N-Channel | 7690pF @ 400V | 27.4m Ω @ 35A, 10V | 5V @ 7.5mA | 75A Tc | 259nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP3N120 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-ixtp3n120-datasheets-9177.pdf | 1.2kV | 3A | TO-220-3 | Lead Free | 3 | 24 Weeks | No SVHC | 4.5Ohm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 200W | 1 | 15ns | 18 ns | 32 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 5V | 200W Tc | TO-220AB | 3A | 700 mJ | 1.1kV | N-Channel | 1350pF @ 25V | 4.5 Ω @ 500mA, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFK64N60P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx64n60p3-datasheets-2082.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 30 Weeks | 3 | EAR99 | AVALANCHE RATED | 3 | Single | 1.13kW | 1 | FET General Purpose Power | Not Qualified | 43 ns | 17ns | 11 ns | 66 ns | 64A | 30V | SILICON | DRAIN | SWITCHING | 1130W Tc | 160A | 0.095Ohm | 1500 mJ | 600V | N-Channel | 9900pF @ 25V | 95m Ω @ 32A, 10V | 5V @ 4mA | 64A Tc | 145nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXFN210N20P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixfn210n20p-datasheets-9186.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 10.5MOhm | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1.07kW | 1 | FET General Purpose Power | Not Qualified | 188A | 20V | SILICON | ISOLATED | SWITCHING | 1070W Tc | 600A | 200V | N-Channel | 18600pF @ 25V | 10.5m Ω @ 105A, 10V | 4.5V @ 8mA | 188A Tc | 255nC @ 10V | 10V | ±20V |
