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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF60DM206 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf60dm206-datasheets-6049.pdf | DirectFET™ Isometric ME | Lead Free | 12 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 130A | 60V | 96W Tc | N-Channel | 6530pF @ 25V | 2.9m Ω @ 80A, 10V | 3.7V @ 150μA | 130A Tc | 200nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP9240 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfs350a-datasheets-5038.pdf | TO-247-3 | 3 | no | unknown | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 150W Tc | 12A | 48A | 0.5Ohm | 790 mJ | P-Channel | 1.2pF @ 25V | 500m Ω @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 44nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5007TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irfh5007trpbf-datasheets-6033.pdf | 8-PowerTDFN | 6.1468mm | 990.6μm | 5.15mm | Lead Free | 5 | 12 Weeks | No SVHC | 5.9MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | 3.6W | 1 | FET General Purpose Power | R-PDSO-N5 | 10 ns | 14ns | 11 ns | 30 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.6W Ta 156W Tc | 400A | 250 mJ | 75V | N-Channel | 4290pF @ 25V | 2 V | 5.9m Ω @ 50A, 10V | 4V @ 150μA | 17A Ta 100A Tc | 98nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| FQAF40N25 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqaf40n25-datasheets-6072.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 108W Tc | 24A | 96A | 0.07Ohm | 800 mJ | N-Channel | 4pF @ 25V | 70m Ω @ 12A, 10V | 5V @ 250μA | 24A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRLH5030TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irlh5030trpbf-datasheets-5856.pdf | 8-PowerVDFN | 6.1468mm | 990.6μm | 5.15mm | Lead Free | 5 | 12 Weeks | No SVHC | 9.9MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | 3.6W | 1 | FET General Purpose Power | R-PDSO-N5 | 21 ns | 72ns | 41 ns | 41 ns | 100A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5V | 3.6W Ta 156W Tc | 400A | 230 mJ | 100V | N-Channel | 5185pF @ 50V | 2.5 V | 9m Ω @ 50A, 10V | 2.5V @ 150μA | 13A Ta 100A Tc | 94nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||
| IPD60R170CFD7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipd60r170cfd7atma1-datasheets-6123.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 76W Tc | 14A | 51A | 0.17Ohm | 60 mJ | N-Channel | 1199pF @ 400V | 170m Ω @ 6A, 10V | 4.5V @ 300μA | 14A Tc | 28nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| CPH6442-TL-E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-cph6442tle-datasheets-6129.pdf | SOT-23-6 Thin, TSOT-23-6 | 6-CPH | 60V | 1.6W Ta | N-Channel | 1.04pF @ 20V | 43mOhm @ 3A, 10V | 2.6V @ 1mA | 6A Ta | 20nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R190C7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd65r190c7atma1-datasheets-6145.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 18 Weeks | 3 | Halogen Free | PG-TO252-3 | 1.15nF | 11 ns | 9 ns | 54 ns | 13A | 20V | 650V | 650V | 72W Tc | 168mOhm | N-Channel | 1150pF @ 400V | 190mOhm @ 5.7A, 10V | 4V @ 290μA | 13A Tc | 23nC @ 10V | 190 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB120N04S401ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb120n04s401atma1-datasheets-6057.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 16 Weeks | 3 | Halogen Free | D2PAK (TO-263AB) | 14nF | 34 ns | 16ns | 36 ns | 41 ns | 120A | 20V | 40V | 40V | 188W Tc | 1.35mOhm | N-Channel | 14000pF @ 25V | 1.5mOhm @ 100A, 10V | 4V @ 140μA | 120A Tc | 176nC @ 10V | 1.5 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7430TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs7430trlpbf-datasheets-6167.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 12 Weeks | 3.949996g | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 1 | 30 | FET General Purpose Power | 32 ns | 105ns | 100 ns | 160 ns | 195A | 20V | Single | 40V | 3.9V | 375W Tc | N-Channel | 14240pF @ 25V | 1.2m Ω @ 100A, 10V | 3.9V @ 250μA | 195A Tc | 460nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SPS01N60C3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ss9013hbu-datasheets-3883.pdf | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 650V | 11W Tc | N-Channel | 100pF @ 25V | 6Ohm @ 500mA, 10V | 3.9V @ 250μA | 800mA Tc | 5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD320N20N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd320n20n3gatma1-datasheets-6190.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 34A | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 136W Tc | TO-252AA | 190 mJ | N-Channel | 2350pF @ 100V | 32m Ω @ 34A, 10V | 4V @ 90μA | 34A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRLS3034TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irls3034trlpbf-datasheets-6203.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | 2 | 12 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 375W | 1 | FET General Purpose Power | R-PSSO-G2 | 65 ns | 827ns | 355 ns | 97 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 375W Tc | 0.0017Ohm | 255 mJ | 40V | N-Channel | 10315pF @ 25V | 1.7m Ω @ 195A, 10V | 2.5V @ 250μA | 195A Tc | 162nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SPB11N60C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb11n60c3atma1-datasheets-6252.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 650V | 600V | 125W Tc | 11A | 33A | 0.38Ohm | 340 mJ | N-Channel | 1200pF @ 25V | 380m Ω @ 7A, 10V | 3.9V @ 500μA | 11A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDMC2512SDC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc2512sdc-datasheets-5898.pdf | 3.3mm | 950μm | 3.3mm | Lead Free | 5 | 8 Weeks | 32.13mg | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 3W | DUAL | Single | 66W | 1 | FET General Purpose Power | S-PDSO-N5 | 4.41nF | 14 ns | 7ns | 5 ns | 34 ns | 32A | 20V | DRAIN | SWITCHING | N-CHANNEL | 25V | METAL-OXIDE SEMICONDUCTOR | MO-240BA | 40A | 200A | 2.95mOhm | 25V | 2 mΩ | ||||||||||||||||||||||||||||||||||||||||
| IPL65R230C7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipl65r230c7auma1-datasheets-5914.pdf | 4-PowerTSFN | Contains Lead | 4 | 18 Weeks | 4 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 67W | 1 | 8 ns | 5ns | 22 ns | 71 ns | 10A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 67W Tc | 0.23Ohm | N-Channel | 996pF @ 400V | 230m Ω @ 2.4A, 10V | 4V @ 240μA | 10A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDZ299P | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdz299p-datasheets-5922.pdf | 9-WFBGA | 9 | no | unknown | NOT SPECIFIED | YES | BOTTOM | BALL | NOT SPECIFIED | 9 | NOT SPECIFIED | 1 | COMMERCIAL | S-PBGA-B9 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.7W Ta | 4.6A | 10A | 0.055Ohm | 48 mJ | P-Channel | 742pF @ 10V | 55m Ω @ 4.6A, 4.5V | 1.5V @ 250μA | 4.6A Ta | 9nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| HUF75321D3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75321d3s-datasheets-4655.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 93W Tc | 20A | 0.036Ohm | N-Channel | 680pF @ 25V | 36m Ω @ 20A, 10V | 4V @ 250μA | 20A Tc | 44nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| NDD03N50ZT4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ndd03n50z1g-datasheets-4283.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 500V | 58W Tc | N-Channel | 329pF @ 25V | 3.3Ohm @ 1.15A, 10V | 4.5V @ 50μA | 2.6A Tc | 16nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3808STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf3808strlpbf-datasheets-5938.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.83mm | 9.65mm | Lead Free | 2 | 12 Weeks | 7MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 200W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 16 ns | 140ns | 120 ns | 68 ns | 106A | 20V | SILICON | DRAIN | SWITCHING | 4V | 200W Tc | 75A | 550A | 75V | N-Channel | 5310pF @ 25V | 7m Ω @ 82A, 10V | 4V @ 250μA | 106A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| FQA18N50V2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa18n50v2-datasheets-5950.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 277W Tc | 20A | 80A | 0.265Ohm | 330 mJ | N-Channel | 3.29pF @ 25V | 265m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 55nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| NTTS2P02R2G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntts2p02r2-datasheets-5122.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | no | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | 40 | 1 | COMMERCIAL | S-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 780mW Ta | 2.4A | 0.09Ohm | P-Channel | 550pF @ 16V | 90m Ω @ 2.4A, 4.5V | 1.4V @ 250μA | 2.4A Ta | 18nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPB011N04NGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb011n04ngatma1-datasheets-5978.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 13 Weeks | 7 | no | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 7 | 250W | 1 | R-PSSO-G6 | 40 ns | 10ns | 13 ns | 63 ns | 180A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250W Tc | N-Channel | 20000pF @ 20V | 1.1m Ω @ 100A, 10V | 4V @ 200μA | 180A Tc | 250nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NTMS4917NR2G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntp85n03-datasheets-5581.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 30V | 880mW Ta | N-Channel | 1.054pF @ 25V | 11mOhm @ 11A, 10V | 2.5V @ 250μA | 7.1A Ta | 15.6nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP14AN06LA0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb14an06la0-datasheets-8684.pdf | TO-220-3 | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT APPLICABLE | 4 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 125W Tc | TO-263AB | 10A | 0.012Ohm | 46 mJ | N-Channel | 2.9pF @ 25V | 11.6m Ω @ 67A, 10V | 3V @ 250μA | 10A Ta 67A Tc | 31nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDA20N50 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdb6030l-datasheets-5129.pdf | TO-3P-3, SC-65-3 | 3 | yes | FAST SWITCHING | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 22A | 88A | 0.23Ohm | 1110 mJ | N-Channel | 3.12pF @ 25V | 230m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 59.5nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NTF3055-100T3G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntjd2152pt1-datasheets-2791.pdf | TO-261-4, TO-261AA | 4 | yes | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 4 | 40 | 1 | COMMERCIAL | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.3W Ta | 3A | 9A | 0.11Ohm | 74 mJ | N-Channel | 455pF @ 25V | 110m Ω @ 1.5A, 10V | 4V @ 250μA | 3A Ta | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPB147N03LGATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipb147n03lgatma1-datasheets-6012.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 30V | 31W Tc | N-Channel | 1pF @ 15V | 14.7mOhm @ 20A, 10V | 2.2V @ 250μA | 20A Tc | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP5P20 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf13n06-datasheets-4412.pdf | TO-220-3 | TO-220-3 | 200V | 75W Tc | P-Channel | 430pF @ 25V | 1.4Ohm @ 2.4A, 10V | 5V @ 250μA | 4.8A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH3474-TL-E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-mch6662tlh-datasheets-2765.pdf | 3-SMD, Flat Lead | SC-70FL/MCPH3 | 30V | 1W Ta | N-Channel | 430pF @ 10V | 50mOhm @ 2A, 4.5V | 4A Ta | 4.7nC @ 4.5V | 1.8V 4.5V | ±12V |
