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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDP8442 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds3170n7-datasheets-4588.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 254W Tc | TO-220AB | 23A | 0.0031Ohm | 720 mJ | N-Channel | 12.2pF @ 25V | 3.1m Ω @ 80A, 10V | 4V @ 250μA | 23A Ta 80A Tc | 235nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| 2SK4087LS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4087ls1e-datasheets-2799.pdf | TO-220-3 Full Pack | TO-220FI(LS) | 600V | 2W Ta 40W Tc | N-Channel | 1200pF @ 30V | 610mOhm @ 7A, 10V | 9.2A Tc | 46nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDAF75N28 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdaf75n28-datasheets-6527.pdf | TO-3P-3 Full Pack | 3 | yes | FAST SWITCHING | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-XSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 280V | 280V | 215W Tc | 46A | 184A | 0.041Ohm | 3080 mJ | N-Channel | 6.7pF @ 25V | 41m Ω @ 23A, 10V | 5V @ 250μA | 46A Tc | 144nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| FDP79N15 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds2170n7-datasheets-4478.pdf | TO-220-3 | 3 | yes | FAST SWITCHING | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 463W Tc | TO-220AB | 79A | 316A | 0.03Ohm | 1669 mJ | N-Channel | 3.41pF @ 25V | 30m Ω @ 39.5A, 10V | 5V @ 250μA | 79A Tc | 73nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| NTD20N03L27-1G | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-ntd20n03l27g-datasheets-4436.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | AVALANCHE RATED | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.75W Ta 74W Tc | 20A | 60A | 0.031Ohm | 288 mJ | N-Channel | 1.26pF @ 25V | 27m Ω @ 10A, 5V | 2V @ 250μA | 20A Ta | 18.9nC @ 10V | 4V 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AUIRF8736M2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/infineontechnologies-auirf8736m2tr-datasheets-6281.pdf | DirectFET™ Isometric M4 | 16 Weeks | 4.8Ohm | EAR99 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 137A | Single | 2.5W Ta 63W Tc | 40V | N-Channel | 6867pF @ 25V | 1.9m Ω @ 85A, 10V | 3.9V @ 150μA | 27A Ta 137A Tc | 204nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7730TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfs7730trl7pp-datasheets-6584.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Lead Free | 12 Weeks | 1.59999g | 7 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 20 ns | 90ns | 91 ns | 182 ns | 240A | 20V | 375W Tc | 75V | N-Channel | 13970pF @ 25V | 2m Ω @ 100A, 10V | 3.7V @ 250μA | 240A Tc | 428nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSC093N15NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc093n15ns5atma1-datasheets-6576.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 26 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 139W | 1 | 150°C | R-PDSO-F5 | 14 ns | 14.4 ns | 87A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.8V | 139W Tc | 0.0093Ohm | 150V | N-Channel | 3230pF @ 75V | 9.3m Ω @ 44A, 10V | 4.6V @ 107μA | 87A Tc | 40.7nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRF2804STRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf2804strl7pp-datasheets-6651.pdf | 40V | 160A | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 10.5mm | 4.5466mm | 8.15mm | Contains Lead | 6 | 12 Weeks | No SVHC | 1.6MOhm | 7 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 330W | 1 | FET General Purpose Power | R-PSSO-G6 | 13 ns | 150ns | 105 ns | 110 ns | 320A | 20V | SILICON | DRAIN | SWITCHING | 4V | 330W Tc | 65 ns | 40V | N-Channel | 6930pF @ 25V | 4 V | 1.6m Ω @ 160A, 10V | 4V @ 250μA | 160A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IRFS7530TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfs7530trl7pp-datasheets-6437.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.67mm | 5.084mm | 9.65mm | Lead Free | 12 Weeks | 1.59999g | No SVHC | 7 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 375W | 1 | FET General Purpose Power | 175°C | 24 ns | 102ns | 79 ns | 168 ns | 240A | 20V | SILICON | 3.7V | 375W Tc | 60V | N-Channel | 12960pF @ 25V | 1.4m Ω @ 100A, 10V | 3.7V @ 250μA | 240A Tc | 354nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPT65R195G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipt65r195g7xtma1-datasheets-6571.pdf | 8-PowerSFN | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 97W Tc | N-Channel | 996pF @ 400V | 195m Ω @ 4.8A, 10V | 4V @ 240μA | 14A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSB165N15NZ3GXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsb165n15nz3gxuma1-datasheets-6709.pdf | 3-WDSON | 3 | 26 Weeks | No SVHC | 7 | yes | EAR99 | e4 | Silver/Nickel (Ag/Ni) | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 2.8W | 1 | FET General Purpose Power | Not Qualified | R-MBCC-N3 | 10 ns | 7 ns | 17 ns | 9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 3V | 2.8W Ta 78W Tc | 9A | 440 mJ | N-Channel | 2800pF @ 75V | 16.5m Ω @ 30A, 10V | 4V @ 110μA | 9A Ta 45A Tc | 35nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||
| BSB044N08NN3GXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsb044n08nn3gxuma1-datasheets-6137.pdf | 3-WDSON | Lead Free | 3 | 17 Weeks | No SVHC | 3 | yes | EAR99 | Silver | e4 | Halogen Free | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 9ns | 18A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8V | 2.2W Ta 78W Tc | 0.0044Ohm | 660 mJ | N-Channel | 5700pF @ 40V | 4.4m Ω @ 30A, 10V | 3.5V @ 97μA | 18A Ta 90A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BSC012N06NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc012n06nsatma1-datasheets-6446.pdf | 8-PowerTDFN | 39 Weeks | 60V | 214W Tc | N-Channel | 11000pF @ 30V | 1.2m Ω @ 50A, 10V | 3.3V @ 147μA | 100A | 143nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4115TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs4115trl7pp-datasheets-6451.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | 12 Weeks | 7 | EAR99 | No | 8541.29.00.95 | SINGLE | GULL WING | 380W | 1 | R-PSSO-G6 | 18 ns | 50ns | 23 ns | 37 ns | 105A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 380W Tc | 420A | 0.0118Ohm | 230 mJ | 150V | N-Channel | 5320pF @ 50V | 11.8m Ω @ 63A, 10V | 5V @ 250μA | 105A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BFL4001 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bfl4004-datasheets-7591.pdf | TO-220-3 Full Pack | TO-220FI(LS) | 900V | 2W Ta 37W Tc | N-Channel | 850pF @ 30V | 2.7Ohm @ 3.25A, 10V | 4.1A Ta | 44nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK536-MTK-TB-E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk536mtktbe-datasheets-6258.pdf | TO-236-3, SC-59, SOT-23-3 | 3-CP | 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD80R280P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipd80r280p7atma1-datasheets-6259.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | yes | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 101W Tc | 45A | 0.28Ohm | 43 mJ | N-Channel | 1200pF @ 500V | 280m Ω @ 7.2A, 10V | 3.5V @ 360μA | 17A Tc | 36nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQAF11N90 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqaf7n90-datasheets-2787.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 120W Tc | 7.2A | 28.8A | 0.96Ohm | 1000 mJ | N-Channel | 3.5pF @ 25V | 960m Ω @ 3.6A, 10V | 5V @ 250μA | 7.2A Tc | 94nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IPL60R185CFD7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl60r185cfd7auma1-datasheets-6275.pdf | 4-PowerTSFN | 4 | 18 Weeks | EAR99 | YES | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 85W Tc | 14A | 51A | 0.185Ohm | 60 mJ | N-Channel | 1199pF @ 400V | 185m Ω @ 6A, 10V | 4.5V @ 300μA | 14A Tc | 28nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| 2SK4089LS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4089ls-datasheets-6288.pdf | TO-220-3 Full Pack | TO-220FI(LS) | 650V | 2W Ta 40W Tc | N-Channel | 1200pF @ 30V | 720mOhm @ 6A, 10V | 8.5A Tc | 45.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB6030BL | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb6030bl-datasheets-6290.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 60W Tc | 40A | 120A | 0.018Ohm | 150 mJ | N-Channel | 1.16pF @ 15V | 18m Ω @ 20A, 10V | 3V @ 250μA | 40A Tc | 17nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BSC016N06NSTATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc016n06nstatma1-datasheets-6298.pdf | 8-PowerTDFN | 3 | 13 Weeks | EAR99 | YES | DUAL | FLAT | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3W Ta 167W Tc | 30A | 400A | 0.0016Ohm | 380 mJ | N-Channel | 6500pF @ 30V | 1.6m Ω @ 50A, 10V | 3.3V @ 95μA | 31A Ta 100A Tc | 95nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NVD4809NT4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd4809n1g-datasheets-2049.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK-3 | 30V | 1.4W Ta 52W Tc | N-Channel | 1.456pF @ 12V | 9mOhm @ 30A, 10V | 2.5V @ 250μA | 9.6A Ta 58A Tc | 25nC @ 11.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC350N20NSFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc350n20nsfdatma1-datasheets-6247.pdf | 8-PowerTDFN | 1.1mm | 5 | 26 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 150W | 1 | 175°C | R-PDSO-F5 | 8 ns | 17 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150W Tc | 0.035Ohm | 97 mJ | 200V | N-Channel | 2410pF @ 100V | 35m Ω @ 35A, 10V | 4V @ 90μA | 35A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFH4234TRPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfh4234trpbf-datasheets-6389.pdf | 8-PowerTDFN | PQFN (5x6) | 25V | 3.5W Ta 27W Tc | N-Channel | 1.011pF @ 13V | 4.6mOhm @ 30A | 2.1V @ 25μA | 22A Ta | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3207TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfs3207trlpbf-datasheets-6227.pdf | 75V | 180A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 4.5MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 29 ns | 120ns | 74 ns | 68 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 75A | 720A | 75V | N-Channel | 7600pF @ 50V | 4 V | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 170A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IRFH5025TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfh5025trpbf-datasheets-6265.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | Lead Free | 5 | 12 Weeks | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | 3.6W | 1 | FET General Purpose Power | R-PDSO-N5 | 9 ns | 6.3ns | 6.1 ns | 17 ns | 32A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5V | 3.6W Ta 8.3W Tc | 46A | 320 mJ | 250V | N-Channel | 2150pF @ 50V | 100m Ω @ 5.7A, 10V | 5V @ 150μA | 3.8A Ta | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| SPS01N60C3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ss9013hbu-datasheets-3883.pdf | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 650V | 11W Tc | N-Channel | 100pF @ 25V | 6Ohm @ 500mA, 10V | 3.9V @ 250μA | 800mA Tc | 5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD320N20N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd320n20n3gatma1-datasheets-6190.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 34A | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 136W Tc | TO-252AA | 190 mJ | N-Channel | 2350pF @ 100V | 32m Ω @ 34A, 10V | 4V @ 90μA | 34A Tc | 29nC @ 10V | 10V | ±20V |
