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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFS4010TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs4010trl7pp-datasheets-6668.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Lead Free | 12 Weeks | No SVHC | 7 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 380W | 1 | FET General Purpose Power | 19 ns | 56ns | 48 ns | 100 ns | 190A | 20V | Single | 380W Tc | 100V | N-Channel | 9830pF @ 50V | 4 V | 4m Ω @ 110A, 10V | 4V @ 250μA | 190A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4125 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4125-datasheets-7183.pdf | TO-3P-3, SC-65-3 | TO-3PB | 600V | 2.5W Ta 170W Tc | N-Channel | 1200pF @ 30V | 610mOhm @ 7A, 10V | 17A Ta | 46nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT029N08N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 5 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipt029n08n5atma1-datasheets-6953.pdf | 8-PowerSFN | 2 | 18 Weeks | yes | EAR99 | YES | SINGLE | FLAT | 1 | R-PSSO-F2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 168W Tc | 52A | 676A | 0.0029Ohm | 124 mJ | N-Channel | 6500pF @ 40V | 2.9m Ω @ 150A, 10V | 3.8V @ 108μA | 52A Ta 169A Tc | 87nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB015N04LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb015n04lgatma1-datasheets-6946.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25 ns | 13ns | 21 ns | 108 ns | 120A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250W Tc | 400A | 865 mJ | N-Channel | 28000pF @ 25V | 1.5m Ω @ 100A, 10V | 2V @ 200μA | 120A Tc | 346nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FQA35N40 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqaf19n20l-datasheets-8393.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 400V | 400V | 310W Tc | 35A | 140A | 0.105Ohm | 1600 mJ | N-Channel | 5.6pF @ 25V | 105m Ω @ 17.5A, 10V | 5V @ 250μA | 35A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IAUT200N08S5N023ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/infineontechnologies-iaut200n08s5n023atma1-datasheets-6969.pdf | 8-PowerSFN | 20 Weeks | NOT SPECIFIED | NOT SPECIFIED | 80V | 200W Tc | N-Channel | 7670pF @ 40V | 2.3m Ω @ 100A, 10V | 3.8V @ 130μA | 200A Tc | 110nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA16N50 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa16n50-datasheets-6985.pdf | TO-3P-3, SC-65-3 | 3 | yes | AVALANCHE RATED | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 200W Tc | 16A | 64A | 0.32Ohm | 980 mJ | N-Channel | 3pF @ 25V | 320m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 75nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R125P7AUMA1 | Infineon Technologies | $21.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl60r125p7auma1-datasheets-6939.pdf | 4-PowerTSFN | 4 | 18 Weeks | EAR99 | YES | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 111W Tc | 78A | 0.125Ohm | 82 mJ | N-Channel | 1544pF @ 400V | 125m Ω @ 8.2A, 10V | 4V @ 410μA | 27A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP161N04TUG-E1-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np82n04mlgs18ay-datasheets-4693.pdf | TO-263-7, D2Pak (6 Leads + Tab) | TO-263-7 | 40V | 1.8W Ta 250W Tc | N-Channel | 20.25pF @ 25V | 1.8mOhm @ 80A, 10V | 4V @ 250μA | 160A Tc | 345nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S205ATMA4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-ipb100n06s205atma4-datasheets-6871.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 10 Weeks | yes | EAR99 | not_compliant | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 100A | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 400A | 0.0047Ohm | 810 mJ | N-Channel | 5110pF @ 25V | 4.7m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDA62N28 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb6670as-datasheets-4038.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 280V | 280V | 500W Tc | 62A | 248A | 0.051Ohm | 1919 mJ | N-Channel | 4.63pF @ 25V | 51m Ω @ 31A, 10V | 5V @ 250μA | 62A Tc | 100nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3746 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk3746-datasheets-6827.pdf | TO-3P-3, SC-65-3 | TO-3PB | 1500V | 2.5W Ta 110W Tc | N-Channel | 380pF @ 30V | 13Ohm @ 1A, 10V | 2A Ta | 37.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4310TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfb4310pbf-datasheets-0629.pdf | 100V | 140A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead | 2 | 12 Weeks | No SVHC | 7MOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 26 ns | 110ns | 78 ns | 68 ns | 140A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 68 ns | 75A | 550A | 980 mJ | 100V | N-Channel | 7670pF @ 50V | 4 V | 7m Ω @ 75A, 10V | 4V @ 250μA | 130A Tc | 250nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IPB014N06NATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb014n06natma1-datasheets-6849.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 13 Weeks | No SVHC | 7 | no | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 3 | 214W | 1 | R-PSSO-G6 | 22 ns | 18ns | 14 ns | 47 ns | 180A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8V | 3W Ta 214W Tc | 34A | 0.0014Ohm | 420 mJ | 60V | N-Channel | 7800pF @ 30V | 1.4m Ω @ 100A, 10V | 2.8V @ 143μA | 34A Ta 180A Tc | 106nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AUIRF5210STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirf5210strl-datasheets-6856.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 16 Weeks | 3 | No | 3.1W | 1 | D2PAK | 2.78nF | 14 ns | 63ns | 55 ns | 72 ns | 38A | 20V | 100V | 3.1W Ta 170W Tc | 60mOhm | -100V | P-Channel | 2780pF @ 25V | 60mOhm @ 38A, 10V | 4V @ 250μA | 38A Tc | 230nC @ 10V | 60 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP18N50V2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp18n50v2-datasheets-6869.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 208W Tc | TO-220AB | 18A | 72A | 0.265Ohm | 330 mJ | N-Channel | 3.29pF @ 25V | 265m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 55nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB016N06L3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb016n06l3gatma1-datasheets-6616.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 13 Weeks | No SVHC | 7 | no | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 250W | 1 | Not Qualified | R-PSSO-G6 | 35 ns | 79ns | 38 ns | 131 ns | 180A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250W Tc | 634 mJ | N-Channel | 28000pF @ 30V | 1.6m Ω @ 100A, 10V | 2.2V @ 196μA | 180A Tc | 166nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NTMFS4744NT1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntmfs4744nt3g-datasheets-4387.pdf | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 30V | 880mW Ta 47.2W Tc | N-Channel | 1.3pF @ 12V | 7.6mOhm @ 30A, 10V | 2.5V @ 250μA | 7A Ta | 17nC @ 4.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK60S5DPP-E0#T2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-rjk60s5dppe0t2-datasheets-6937.pdf | TO-220-3 Full Pack | TO-220FP | 600V | 33.7W Tc | N-Channel | 1.6pF @ 25V | 178mOhm @ 10A, 10V | 20A Tc | 27nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R160C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb60r160c6atma1-datasheets-6717.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 2 | no | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 176W | 1 | Not Qualified | 13 ns | 8 ns | 96 ns | 23.8A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 176W Tc | 70A | 497 mJ | N-Channel | 1660pF @ 100V | 160m Ω @ 11.3A, 10V | 3.5V @ 750μA | 23.8A Tc | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BTS110NKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bts110nksa1-datasheets-6791.pdf | TO-220-3 | TO-220AB | 100V | N-Channel | 600pF @ 25V | 200mOhm @ 5A, 10V | 3.5V @ 1mA | 10A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA90N10V2 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqaf6n80-datasheets-4040.pdf | TO-3P-3, SC-65-3 | 3 | yes | FAST SWITCHING | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 330W Tc | 105A | 420A | 0.01Ohm | 2430 mJ | N-Channel | 6.15pF @ 25V | 10m Ω @ 52.5A, 10V | 4V @ 250μA | 105A Tc | 191nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R199CPAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipl60r199cpauma1-datasheets-6778.pdf | 4-PowerTSFN | 4 | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | NO LEAD | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | S-PSSO-N4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 139W Tc | 51A | 0.199Ohm | 436 mJ | N-Channel | 1520pF @ 100V | 199m Ω @ 9.9A, 10V | 3.5V @ 660μA | 16.4A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IAUT165N08S5N029ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/infineontechnologies-iaut165n08s5n029atma2-datasheets-6808.pdf | 8-PowerSFN | 20 Weeks | NOT SPECIFIED | NOT SPECIFIED | 80V | 167W Tc | N-Channel | 6370pF @ 40V | 2.9m Ω @ 80A, 10V | 3.8V @ 108μA | 165A Tc | 90nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB5645 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdq7238as-datasheets-2410.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 125W Tc | 83A | 150A | 0.0095Ohm | N-Channel | 4.468pF @ 30V | 9.5m Ω @ 40A, 10V | 4V @ 250μA | 80A Ta | 107nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB160N04S203ATMA4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb160n04s203atma4-datasheets-6819.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 10 Weeks | yes | EAR99 | ULTRA-LOW RESISTANCE | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 160A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 640A | 0.0029Ohm | 810 mJ | N-Channel | 5300pF @ 25V | 2.9m Ω @ 60A, 10V | 4V @ 250μA | 160A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSC093N15NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc093n15ns5atma1-datasheets-6576.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 26 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 139W | 1 | 150°C | R-PDSO-F5 | 14 ns | 14.4 ns | 87A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.8V | 139W Tc | 0.0093Ohm | 150V | N-Channel | 3230pF @ 75V | 9.3m Ω @ 44A, 10V | 4.6V @ 107μA | 87A Tc | 40.7nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF2804STRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf2804strl7pp-datasheets-6651.pdf | 40V | 160A | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 10.5mm | 4.5466mm | 8.15mm | Contains Lead | 6 | 12 Weeks | No SVHC | 1.6MOhm | 7 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 330W | 1 | FET General Purpose Power | R-PSSO-G6 | 13 ns | 150ns | 105 ns | 110 ns | 320A | 20V | SILICON | DRAIN | SWITCHING | 4V | 330W Tc | 65 ns | 40V | N-Channel | 6930pF @ 25V | 4 V | 1.6m Ω @ 160A, 10V | 4V @ 250μA | 160A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRFS7530TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfs7530trl7pp-datasheets-6437.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.67mm | 5.084mm | 9.65mm | Lead Free | 12 Weeks | 1.59999g | No SVHC | 7 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 375W | 1 | FET General Purpose Power | 175°C | 24 ns | 102ns | 79 ns | 168 ns | 240A | 20V | SILICON | 3.7V | 375W Tc | 60V | N-Channel | 12960pF @ 25V | 1.4m Ω @ 100A, 10V | 3.7V @ 250μA | 240A Tc | 354nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPT65R195G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipt65r195g7xtma1-datasheets-6571.pdf | 8-PowerSFN | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 97W Tc | N-Channel | 996pF @ 400V | 195m Ω @ 4.8A, 10V | 4V @ 240μA | 14A Tc | 20nC @ 10V | 10V | ±20V |
