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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPB038N12N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb038n12n3gatma1-datasheets-7332.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSSO-G2 | 35 ns | 52ns | 21 ns | 70 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 120V | 300W Tc | 480A | 900 mJ | N-Channel | 13800pF @ 60V | 3.8m Ω @ 100A, 10V | 4V @ 270μA | 120A Tc | 211nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| AUIRF8739L2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirf8739l2tr-datasheets-7361.pdf | DirectFET™ Isometric L8 | 16 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 545A | 40V | 3.8W Ta 340W Tc | N-Channel | 17890pF @ 25V | 0.6m Ω @ 195A, 10V | 3.9V @ 250μA | 57A Ta 545A Tc | 562nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7669L2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf7669l2tr-datasheets-7354.pdf | DirectFET™ Isometric L8 | Lead Free | 9 | 16 Weeks | 15 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | BOTTOM | 100W | 1 | FET General Purpose Power | R-XBCC-N9 | 15 ns | 30ns | 14 ns | 27 ns | 114A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.3W Ta 100W Tc | 375A | 460A | 0.0044Ohm | 850 mJ | 100V | N-Channel | 5660pF @ 25V | 4.4m Ω @ 68A, 10V | 5V @ 250μA | 19A Ta 114A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF7749L2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf7749l2trpbf-datasheets-7314.pdf | DirectFET™ Isometric L8 | 9.144mm | 740μm | 7.112mm | 9 | 12 Weeks | No SVHC | 8 | EAR99 | No | IRF7749L2TRPBF | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1 | 30 | 3.8W | 1 | FET General Purpose Power | 175°C | R-XBCC-N9 | 29 ns | 43ns | 39 ns | 72 ns | 33A | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 3.3W Ta 125W Tc | 375A | 260 mJ | 60V | N-Channel | 12320pF @ 25V | 2.9 V | 1.5m Ω @ 120A, 10V | 4V @ 250μA | 33A Ta 375A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IPT65R105G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipt65r105g7xtma1-datasheets-7391.pdf | 8-PowerSFN | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 156W Tc | N-Channel | 1670pF @ 400V | 105m Ω @ 8.9A, 10V | 4V @ 440μA | 24A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL60S216 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irl60s216-datasheets-7498.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 12 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 195A | 60V | 375W Tc | N-Channel | 15330pF @ 25V | 1.95m Ω @ 100A, 10V | 2.4V @ 250μA | 195A Tc | 255nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IAUT240N08S5N019ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/infineontechnologies-iaut240n08s5n019atma1-datasheets-7264.pdf | 8-PowerSFN | 2 | 20 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-F2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 230W Tc | 240A | 960A | 0.0019Ohm | 400 mJ | N-Channel | 9264pF @ 40V | 1.9m Ω @ 100A, 10V | 3.8V @ 160μA | 240A Tc | 130nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SMP3003-DL-E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-smf05ct2-datasheets-1386.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | SMP-FD | 75V | 90W Tc | P-Channel | 13.4pF @ 20V | 8mOhm @ 50A, 10V | 100A Ta | 280nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPZ60R037P7XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipu60r3k4ceakma1-datasheets-5010.pdf | TO-247-4 | PG-TO247-4 | 650V | 255W Tc | N-Channel | 5.243pF @ 400V | 37mOhm @ 29.5A, 10V | 4V @ 1.48mA | 76A Tc | 121nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPZ60R041P6FKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipu80r1k0cebkma1-datasheets-5430.pdf | TO-247-4 | PG-TO247-4 | 600V | 481W Tc | N-Channel | 8.18pF @ 100V | 41mOhm @ 35.5A, 10V | 4.5V @ 2.96mA | 77.5A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA11N90 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa8n90c-datasheets-3630.pdf | TO-3P-3, SC-65-3 | TO-3P | 900V | 300W Tc | N-Channel | 3.5pF @ 25V | 960mOhm @ 5.7A, 10V | 5V @ 250μA | 11.4A Tc | 94nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2173N-EL-E | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/rochesterelectronicsllc-hc55142im-datasheets-2712.pdf | 8-PowerSOIC (0.154, 3.90mm Width) | 8-LFPAK-iV | 100V | 30W Tc | N-Channel | 4.35pF @ 10V | 15.3mOhm @ 12.5A, 10V | 6V @ 20mA | 25A Ta | 61nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIPC69SN60C3X2SA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-sgp13n60ufdtu-datasheets-1928.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7739L1TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf7739l1trpbf-datasheets-6960.pdf | DirectFET™ Isometric L8 | Lead Free | 12 Weeks | 15 | EAR99 | No | 3.8W | 1 | FET General Purpose Power | 21 ns | 71ns | 42 ns | 56 ns | 270A | 20V | Single | 40V | 3.8W Ta 125W Tc | 375A | N-Channel | 11880pF @ 25V | 1m Ω @ 160A, 10V | 4V @ 250μA | 46A Ta 270A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R099C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw65r099c6fksa1-datasheets-2270.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 12 Weeks | 3 | no | not_compliant | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | R-PSSO-G2 | 10.6 ns | 9ns | 6 ns | 77 ns | 38A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 278W Tc | 115A | 0.099Ohm | 845 mJ | N-Channel | 2780pF @ 100V | 99m Ω @ 12.8A, 10V | 3.5V @ 1.2mA | 38A Tc | 127nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| 2SK4066-DL-E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4066dle-datasheets-7201.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | SMP-FD | 60V | 1.65W Ta 90W Tc | N-Channel | 12500pF @ 20V | 4.7mOhm @ 50A, 10V | 100A Ta | 220nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB073N15N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-ipb073n15n5atma1-datasheets-7099.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | yes | EAR99 | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 214W Tc | 114A | 456A | 0.0073Ohm | 130 mJ | N-Channel | 4700pF @ 75V | 7.3m Ω @ 57A, 10V | 4.6V @ 160μA | 114A Tc | 61nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF7799L2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/infineontechnologies-irf7799l2trpbf-datasheets-6468.pdf | DirectFET™ Isometric L8 | 9.144mm | 508μm | 7.112mm | 9 | No SVHC | 11 | EAR99 | No | BOTTOM | 125W | 1 | FET General Purpose Power | R-XBCC-N9 | 36.3 ns | 33.5ns | 26.6 ns | 73.9 ns | 6.6A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 4.3W Ta 125W Tc | 375A | 140A | 0.038Ohm | 325 mJ | 250V | N-Channel | 6714pF @ 25V | 38m Ω @ 21A, 10V | 5V @ 250μA | 375A Tc | 165nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IPT60R125G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ G7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/infineontechnologies-ipt60r125g7xtma1-datasheets-7155.pdf | 8-PowerSFN | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | YES | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 120W Tc | 20A | 54A | 0.125Ohm | 64 mJ | N-Channel | 1080pF @ 400V | 125m Ω @ 6.4A, 10V | 4V @ 320μA | 20A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFS7734TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfs7734trl7pp-datasheets-6159.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.54mm | 4.83mm | 9.65mm | Lead Free | 6 | 12 Weeks | 1.59999g | No SVHC | 6 | EAR99 | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 17 ns | 85ns | 75 ns | 123 ns | 197A | 20V | SILICON | DRAIN | SWITCHING | 75V | 75V | 294W Tc | 0.00305Ohm | N-Channel | 10130pF @ 25V | 3.05m Ω @ 100A, 10V | 3.7V @ 150μA | 197A Tc | 270nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPB011N04LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb011n04lgatma1-datasheets-7118.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | 13 Weeks | no | EAR99 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 7 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 250W Tc | 180A | 1260A | 0.0014Ohm | 525 mJ | N-Channel | 29000pF @ 20V | 1.1m Ω @ 100A, 10V | 2V @ 200μA | 180A Tc | 346nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPB117N20NFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb117n20nfdatma1-datasheets-7140.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.82mm | Contains Lead | 2 | 13 Weeks | 1.946308g | No SVHC | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 300W | 1 | 175°C | R-PSSO-G2 | 13 ns | 10ns | 8 ns | 24 ns | 84A | 20V | 200V | SILICON | DRAIN | 3V | 300W Tc | 200V | N-Channel | 6650pF @ 100V | 11.7m Ω @ 84A, 10V | 4V @ 270μA | 84A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IPB60R125C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r125c6atma1-datasheets-7276.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | no | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 219W Tc | 30A | 89A | 0.125Ohm | 636 mJ | N-Channel | 2127pF @ 100V | 125m Ω @ 14.5A, 10V | 3.5V @ 960μA | 30A Tc | 96nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| 2SK4210 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4210-datasheets-7070.pdf | TO-3P-3, SC-65-3 | TO-3PB | 900V | 2.5W Ta 190W Tc | N-Channel | 1500pF @ 30V | 1.3Ohm @ 5A, 10V | 10A Ta | 75nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7749L1TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf7749l1trpbf-datasheets-6987.pdf | DirectFET™ Isometric L8 | Lead Free | 12 Weeks | 15 | No | 1 | 3.3W | 1 | DIRECTFET L8 | 12.32nF | 17 ns | 43ns | 39 ns | 78 ns | 200A | 20V | 60V | 3.3W Ta 125W Tc | 1.1mOhm | 60V | N-Channel | 12320pF @ 25V | 1.5mOhm @ 120A, 10V | 4V @ 250μA | 33A Ta 200A Tc | 300nC @ 10V | 1.5 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPB100N12S305ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/infineontechnologies-ipb100n12s305atma1-datasheets-7125.pdf | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 2 | 14 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 120V | 120V | 300W Tc | TO-263AB | 100A | 400A | 0.0048Ohm | 1445 mJ | N-Channel | 11570pF @ 25V | 5.1m Ω @ 100A, 10V | 4V @ 240μA | 100A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF200S234 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf200s234-datasheets-6845.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 417W Tc | 90A | 312A | 0.0169Ohm | 693 mJ | N-Channel | 6484pF @ 50V | 16.9m Ω @ 51A, 10V | 5V @ 250μA | 90A | 162nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFS4010TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs4010trl7pp-datasheets-6668.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Lead Free | 12 Weeks | No SVHC | 7 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 380W | 1 | FET General Purpose Power | 19 ns | 56ns | 48 ns | 100 ns | 190A | 20V | Single | 380W Tc | 100V | N-Channel | 9830pF @ 50V | 4 V | 4m Ω @ 110A, 10V | 4V @ 250μA | 190A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| 2SK4125 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4125-datasheets-7183.pdf | TO-3P-3, SC-65-3 | TO-3PB | 600V | 2.5W Ta 170W Tc | N-Channel | 1200pF @ 30V | 610mOhm @ 7A, 10V | 17A Ta | 46nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT029N08N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 5 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipt029n08n5atma1-datasheets-6953.pdf | 8-PowerSFN | 2 | 18 Weeks | yes | EAR99 | YES | SINGLE | FLAT | 1 | R-PSSO-F2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 168W Tc | 52A | 676A | 0.0029Ohm | 124 mJ | N-Channel | 6500pF @ 40V | 2.9m Ω @ 150A, 10V | 3.8V @ 108μA | 52A Ta 169A Tc | 87nC @ 10V | 6V 10V | ±20V |
