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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPB60R080P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r080p7atma1-datasheets-7442.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 129W Tc | 110A | 0.08Ohm | 118 mJ | N-Channel | 2180pF @ 400V | 80m Ω @ 11.8A, 10V | 4V @ 590μA | 37A Tc | 51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB156N22NFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™FD | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb156n22nfdatma1-datasheets-7510.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 220V | 220V | 300W Tc | 72A | 288A | 0.0156Ohm | 400 mJ | N-Channel | 6930pF @ 110V | 15.6m Ω @ 50A, 10V | 4V @ 270μA | 72A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPB60R120C7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r120c7atma1-datasheets-7160.pdf | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 92W Tc | TO-263AB | 19A | 66A | 0.12Ohm | 78 mJ | N-Channel | 1500pF @ 400V | 120m Ω @ 7.8A, 10V | 4V @ 390μA | 19A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NTY100N10G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nty100n10g-datasheets-7584.pdf | TO-264-3, TO-264AA | 3 | yes | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 313W Tc | 123A | 369A | 0.01Ohm | 500 mJ | N-Channel | 10.11pF @ 25V | 10m Ω @ 50A, 10V | 4V @ 250μA | 123A Tc | 350nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FCH47N60 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb2570-datasheets-0194.pdf | TO-247-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 417W Tc | TO-247AD | 47A | 141A | 0.073Ohm | 1800 mJ | N-Channel | 8pF @ 25V | 70m Ω @ 23.5A, 10V | 5V @ 250μA | 47A Tc | 270nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IPB60R125CPATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r125cpatma1-datasheets-7375.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 208W Tc | 25A | 82A | 0.125Ohm | 708 mJ | N-Channel | 2500pF @ 100V | 125m Ω @ 16A, 10V | 3.5V @ 1.1mA | 25A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPB073N15N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-ipb073n15n5atma1-datasheets-7099.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | yes | EAR99 | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 214W Tc | 114A | 456A | 0.0073Ohm | 130 mJ | N-Channel | 4700pF @ 75V | 7.3m Ω @ 57A, 10V | 4.6V @ 160μA | 114A Tc | 61nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF7799L2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/infineontechnologies-irf7799l2trpbf-datasheets-6468.pdf | DirectFET™ Isometric L8 | 9.144mm | 508μm | 7.112mm | 9 | No SVHC | 11 | EAR99 | No | BOTTOM | 125W | 1 | FET General Purpose Power | R-XBCC-N9 | 36.3 ns | 33.5ns | 26.6 ns | 73.9 ns | 6.6A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 4.3W Ta 125W Tc | 375A | 140A | 0.038Ohm | 325 mJ | 250V | N-Channel | 6714pF @ 25V | 38m Ω @ 21A, 10V | 5V @ 250μA | 375A Tc | 165nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IPT60R125G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ G7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/infineontechnologies-ipt60r125g7xtma1-datasheets-7155.pdf | 8-PowerSFN | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | YES | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 120W Tc | 20A | 54A | 0.125Ohm | 64 mJ | N-Channel | 1080pF @ 400V | 125m Ω @ 6.4A, 10V | 4V @ 320μA | 20A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFS7734TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfs7734trl7pp-datasheets-6159.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.54mm | 4.83mm | 9.65mm | Lead Free | 6 | 12 Weeks | 1.59999g | No SVHC | 6 | EAR99 | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 17 ns | 85ns | 75 ns | 123 ns | 197A | 20V | SILICON | DRAIN | SWITCHING | 75V | 75V | 294W Tc | 0.00305Ohm | N-Channel | 10130pF @ 25V | 3.05m Ω @ 100A, 10V | 3.7V @ 150μA | 197A Tc | 270nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||
| IPB011N04LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb011n04lgatma1-datasheets-7118.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | 13 Weeks | no | EAR99 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 7 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 250W Tc | 180A | 1260A | 0.0014Ohm | 525 mJ | N-Channel | 29000pF @ 20V | 1.1m Ω @ 100A, 10V | 2V @ 200μA | 180A Tc | 346nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IPB117N20NFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb117n20nfdatma1-datasheets-7140.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.82mm | Contains Lead | 2 | 13 Weeks | 1.946308g | No SVHC | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 300W | 1 | 175°C | R-PSSO-G2 | 13 ns | 10ns | 8 ns | 24 ns | 84A | 20V | 200V | SILICON | DRAIN | 3V | 300W Tc | 200V | N-Channel | 6650pF @ 100V | 11.7m Ω @ 84A, 10V | 4V @ 270μA | 84A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IPB60R125C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r125c6atma1-datasheets-7276.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | no | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 219W Tc | 30A | 89A | 0.125Ohm | 636 mJ | N-Channel | 2127pF @ 100V | 125m Ω @ 14.5A, 10V | 3.5V @ 960μA | 30A Tc | 96nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IAUT240N08S5N019ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/infineontechnologies-iaut240n08s5n019atma1-datasheets-7264.pdf | 8-PowerSFN | 2 | 20 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-F2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 230W Tc | 240A | 960A | 0.0019Ohm | 400 mJ | N-Channel | 9264pF @ 40V | 1.9m Ω @ 100A, 10V | 3.8V @ 160μA | 240A Tc | 130nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SMP3003-DL-E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-smf05ct2-datasheets-1386.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | SMP-FD | 75V | 90W Tc | P-Channel | 13.4pF @ 20V | 8mOhm @ 50A, 10V | 100A Ta | 280nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPZ60R037P7XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipu60r3k4ceakma1-datasheets-5010.pdf | TO-247-4 | PG-TO247-4 | 650V | 255W Tc | N-Channel | 5.243pF @ 400V | 37mOhm @ 29.5A, 10V | 4V @ 1.48mA | 76A Tc | 121nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPZ60R041P6FKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipu80r1k0cebkma1-datasheets-5430.pdf | TO-247-4 | PG-TO247-4 | 600V | 481W Tc | N-Channel | 8.18pF @ 100V | 41mOhm @ 35.5A, 10V | 4.5V @ 2.96mA | 77.5A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA11N90 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa8n90c-datasheets-3630.pdf | TO-3P-3, SC-65-3 | TO-3P | 900V | 300W Tc | N-Channel | 3.5pF @ 25V | 960mOhm @ 5.7A, 10V | 5V @ 250μA | 11.4A Tc | 94nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2173N-EL-E | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/rochesterelectronicsllc-hc55142im-datasheets-2712.pdf | 8-PowerSOIC (0.154, 3.90mm Width) | 8-LFPAK-iV | 100V | 30W Tc | N-Channel | 4.35pF @ 10V | 15.3mOhm @ 12.5A, 10V | 6V @ 20mA | 25A Ta | 61nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIPC69SN60C3X2SA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-sgp13n60ufdtu-datasheets-1928.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7739L1TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf7739l1trpbf-datasheets-6960.pdf | DirectFET™ Isometric L8 | Lead Free | 12 Weeks | 15 | EAR99 | No | 3.8W | 1 | FET General Purpose Power | 21 ns | 71ns | 42 ns | 56 ns | 270A | 20V | Single | 40V | 3.8W Ta 125W Tc | 375A | N-Channel | 11880pF @ 25V | 1m Ω @ 160A, 10V | 4V @ 250μA | 46A Ta 270A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPB65R099C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw65r099c6fksa1-datasheets-2270.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 12 Weeks | 3 | no | not_compliant | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | R-PSSO-G2 | 10.6 ns | 9ns | 6 ns | 77 ns | 38A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 278W Tc | 115A | 0.099Ohm | 845 mJ | N-Channel | 2780pF @ 100V | 99m Ω @ 12.8A, 10V | 3.5V @ 1.2mA | 38A Tc | 127nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| 2SK4066-DL-E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4066dle-datasheets-7201.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | SMP-FD | 60V | 1.65W Ta 90W Tc | N-Channel | 12500pF @ 20V | 4.7mOhm @ 50A, 10V | 100A Ta | 220nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA16N50 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa16n50-datasheets-6985.pdf | TO-3P-3, SC-65-3 | 3 | yes | AVALANCHE RATED | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 200W Tc | 16A | 64A | 0.32Ohm | 980 mJ | N-Channel | 3pF @ 25V | 320m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 75nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IPL60R125P7AUMA1 | Infineon Technologies | $21.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl60r125p7auma1-datasheets-6939.pdf | 4-PowerTSFN | 4 | 18 Weeks | EAR99 | YES | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 111W Tc | 78A | 0.125Ohm | 82 mJ | N-Channel | 1544pF @ 400V | 125m Ω @ 8.2A, 10V | 4V @ 410μA | 27A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NP161N04TUG-E1-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np82n04mlgs18ay-datasheets-4693.pdf | TO-263-7, D2Pak (6 Leads + Tab) | TO-263-7 | 40V | 1.8W Ta 250W Tc | N-Channel | 20.25pF @ 25V | 1.8mOhm @ 80A, 10V | 4V @ 250μA | 160A Tc | 345nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S205ATMA4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-ipb100n06s205atma4-datasheets-6871.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 10 Weeks | yes | EAR99 | not_compliant | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 100A | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 400A | 0.0047Ohm | 810 mJ | N-Channel | 5110pF @ 25V | 4.7m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FQA28N50F | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa28n50f-datasheets-7019.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 310W Tc | 28.4A | 113.6A | 0.16Ohm | 1300 mJ | N-Channel | 5.6pF @ 25V | 160m Ω @ 14.2A, 10V | 5V @ 250μA | 28.4A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRL40SC228 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irl40sc228-datasheets-6942.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 12 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 40V | 416W Tc | N-Channel | 19680pF @ 25V | 0.65m Ω @ 100A, 10V | 2.4V @ 250μA | 557A Tc | 307nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4229TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs4229trlpbf-datasheets-7037.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | Lead Free | 2 | 12 Weeks | 48MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 330W | 1 | R-PSSO-G2 | 18 ns | 31ns | 21 ns | 30 ns | 45A | 30V | SILICON | DRAIN | SWITCHING | 330W Tc | 250V | N-Channel | 4560pF @ 25V | 48m Ω @ 26A, 10V | 5V @ 250μA | 45A Tc | 110nC @ 10V | 10V | ±30V |
