Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Height | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IGLD60R070D1AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolGaN™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | /files/infineontechnologies-igld60r070d1auma1-datasheets-7809.pdf | 8-LDFN Exposed Pad | 12 Weeks | 600V | 114W Tc | N-Channel | 380pF @ 400V | 1.6V @ 2.6mA | 15A Tc | -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGT60R190D1SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolGaN™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | /files/infineontechnologies-igt60r190d1satma1-datasheets-7818.pdf | 8-PowerSFN | 12 Weeks | 600V | 55.5W Tc | N-Channel | 157pF @ 400V | 1.6V @ 960μA | 12.5A Tc | -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R040C7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipb60r040c7atma1-datasheets-7857.pdf | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 4.5mm | 18 Weeks | 1 | 227W | 150°C | PG-TO263-3 | 18.5 ns | 81 ns | 50A | 20V | 650V | 227W Tc | 34mOhm | 600V | N-Channel | 4340pF @ 400V | 40mOhm @ 24.9A, 10V | 4V @ 1.24mA | 50A Tc | 107nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| WPB4002 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-wpb4002-datasheets-7679.pdf | TO-3P-3, SC-65-3 | TO-3PB | 600V | 2.5W Ta 220W Tc | N-Channel | 2.2pF @ 30V | 360mOhm @ 11.5A, 10V | 23A Ta | 84nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IAUT150N10S5N035ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/infineontechnologies-iaut150n10s5n035atma1-datasheets-7255.pdf | 8-PowerSFN | 2 | 20 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-F2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 166W Tc | 150A | 600A | 0.0035Ohm | 210 mJ | N-Channel | 6110pF @ 50V | 3.5m Ω @ 75A, 10V | 3.8V @ 110μA | 150A Tc | 87nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||
| IPT111N20NFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipt111n20nfdatma1-datasheets-7658.pdf | 8-PowerSFN | 2.4mm | Contains Lead | 18 Weeks | yes | EAR99 | PG-HSOF-8 | not_compliant | e3 | Tin (Sn) | Halogen Free | 1 | 375W | 175°C | 13 ns | 39 ns | 96A | 20V | 200V | 375W Tc | 200V | N-Channel | 7000pF @ 100V | 11.1m Ω @ 96A, 10V | 4V @ 267μA | 96A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPB60R099CPATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb60r099cpatma1-datasheets-7685.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 255W Tc | 31A | 93A | 0.099Ohm | 800 mJ | N-Channel | 2800pF @ 100V | 99m Ω @ 18A, 10V | 3.5V @ 1.2mA | 31A Tc | 80nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IPT60R050G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ G7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipt60r050g7xtma1-datasheets-7708.pdf | 8-PowerSFN | 3 | 18 Weeks | yes | EAR99 | YES | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 245W Tc | 44A | 135A | 0.05Ohm | 159 mJ | N-Channel | 2670pF @ 400V | 50m Ω @ 15.9A, 10V | 4V @ 800μA | 44A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IAUS300N08S5N012ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-iaus300n08s5n012atma1-datasheets-7666.pdf | 8-PowerSMD, Gull Wing | 20 Weeks | 80V | 375W Tc | N-Channel | 16250pF @ 40V | 1.2m Ω @ 100A, 10V | 3.8V @ 275μA | 300A Tc | 231nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL65R070C7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipl65r070c7auma1-datasheets-7717.pdf | 4-PowerTSFN | Contains Lead | 4 | 18 Weeks | 4 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 14 ns | 6ns | 11 ns | 92 ns | 28A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 169W Tc | 0.07Ohm | 171 mJ | N-Channel | 3020pF @ 100V | 70m Ω @ 8.5A, 10V | 4V @ 850μA | 28A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| FQH140N10 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqh140n10-datasheets-7741.pdf | TO-247-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 375W Tc | 140A | 560A | 0.01Ohm | 1500 mJ | N-Channel | 7.9pF @ 25V | 10m Ω @ 70A, 10V | 4V @ 250μA | 140A Tc | 285nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||
| 2SK4222 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk536mtktbe-datasheets-6258.pdf | TO-3P-3, SC-65-3 | TO-3PB | 600V | 2.5W Ta 220W Tc | N-Channel | 2250pF @ 30V | 340mOhm @ 11.5A, 10V | 23A Ta | 81nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPDD60R050G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ G7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/infineontechnologies-ipdd60r050g7xtma1-datasheets-7745.pdf | 10-PowerSOP Module | 2.5mm | 10 | 18 Weeks | YES | DUAL | GULL WING | 1 | 278W | 1 | 150°C | 22 ns | 72 ns | 47A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 278W Tc | TO-252 | 0.05Ohm | 600V | N-Channel | 2670pF @ 400V | 50m Ω @ 15.9A, 10V | 4V @ 800μA | 47A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPT059N15N3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipt059n15n3atma1-datasheets-7600.pdf | 8-PowerSFN | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-F2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 375W Tc | 155A | 620A | 0.0059Ohm | 520 mJ | N-Channel | 7200pF @ 75V | 5.9m Ω @ 150A, 10V | 4V @ 270μA | 155A Tc | 92nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||
| IPB60R099C7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r099c7atma1-datasheets-7287.pdf | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 2 | 18 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 110W Tc | TO-263AB | 22A | 83A | 0.099Ohm | 97 mJ | N-Channel | 1819pF @ 400V | 99m Ω @ 9.7A, 10V | 4V @ 490μA | 22A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IAUT300N08S5N014ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-iaut300n08s5n014atma1-datasheets-7588.pdf | 8-PowerSFN | 20 Weeks | NOT SPECIFIED | NOT SPECIFIED | 80V | 300W Tc | N-Channel | 13178pF @ 40V | 1.4m Ω @ 100A, 10V | 3.8V @ 230μA | 300A DC | 187nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB044N15N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb044n15n5atma1-datasheets-7505.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 4.5mm | 6 | 13 Weeks | yes | EAR99 | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 300W | 1 | 175°C | R-PSSO-G6 | 19 ns | 24 ns | 174A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 696A | 0.0044Ohm | 470 mJ | 150V | N-Channel | 8000pF @ 75V | 4.4m Ω @ 87A, 10V | 4.6V @ 264μA | 174A Tc | 100nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||
| RJK60S5DPK-M0#T0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-rjk60s5dpkm0t0-datasheets-7622.pdf | TO-3P-3, SC-65-3 | TO-3PSG | 600V | N-Channel | 1.6pF @ 25V | 178mOhm @ 10A, 10V | 20A Tc | 27nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL40T209ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/infineontechnologies-irl40t209atma1-datasheets-7494.pdf | 8-PowerSFN | 12 Weeks | 40V | 500W Tc | N-Channel | 16000pF @ 20V | 0.72m Ω @ 100A, 10V | 2.4V @ 250μA | 300A Tc | 269nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R065P7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipl60r065p7auma1-datasheets-7671.pdf | 4-PowerTSFN | 1.1mm | 4 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | NO LEAD | NOT SPECIFIED | 1 | NOT SPECIFIED | 201W | 1 | 150°C | S-PSSO-N4 | 16 ns | 73 ns | 41A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 201W Tc | 0.065Ohm | 600V | N-Channel | 2895pF @ 400V | 65m Ω @ 15.9A, 10V | 4V @ 800μA | 41A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IPT65R105G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipt65r105g7xtma1-datasheets-7391.pdf | 8-PowerSFN | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 156W Tc | N-Channel | 1670pF @ 400V | 105m Ω @ 8.9A, 10V | 4V @ 440μA | 24A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRL60S216 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irl60s216-datasheets-7498.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 12 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 195A | 60V | 375W Tc | N-Channel | 15330pF @ 25V | 1.95m Ω @ 100A, 10V | 2.4V @ 250μA | 195A Tc | 255nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IAUT300N08S5N012ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/infineontechnologies-iaut300n08s5n012atma2-datasheets-7473.pdf | 8-PowerSFN | 2.4mm | 20 Weeks | PG-HSOF-8 | NOT SPECIFIED | 1 | NOT SPECIFIED | 375W | 175°C | 31 ns | 69 ns | 300A | 20V | 375W Tc | 80V | N-Channel | 16250pF @ 40V | 1.2m Ω @ 100A, 10V | 3.8V @ 275μA | 300A Tc | 231nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AUIRF7749L2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirf7749l2tr-datasheets-7525.pdf | DirectFET™ Isometric L8 | 740μm | 16 Weeks | EAR99 | AUIRF7749L2TR | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.8W | 175°C | 29 ns | 72 ns | 36A | 60V | 2V | 3.8W Ta 341W Tc | 60V | N-Channel | 10655pF @ 25V | 1.5m Ω @ 120A, 10V | 4V @ 250μA | 36A Ta 345A Tc | 275nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||
| FQL50N40 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp2n50-datasheets-4745.pdf | TO-264-3, TO-264AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 400V | 400V | 460W Tc | 50A | 200A | 0.075Ohm | 1860 mJ | N-Channel | 7.5pF @ 25V | 75m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 210nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IPB60R080P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r080p7atma1-datasheets-7442.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 129W Tc | 110A | 0.08Ohm | 118 mJ | N-Channel | 2180pF @ 400V | 80m Ω @ 11.8A, 10V | 4V @ 590μA | 37A Tc | 51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPB156N22NFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™FD | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb156n22nfdatma1-datasheets-7510.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 220V | 220V | 300W Tc | 72A | 288A | 0.0156Ohm | 400 mJ | N-Channel | 6930pF @ 110V | 15.6m Ω @ 50A, 10V | 4V @ 270μA | 72A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPB60R120C7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r120c7atma1-datasheets-7160.pdf | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 92W Tc | TO-263AB | 19A | 66A | 0.12Ohm | 78 mJ | N-Channel | 1500pF @ 400V | 120m Ω @ 7.8A, 10V | 4V @ 390μA | 19A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| NTY100N10G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nty100n10g-datasheets-7584.pdf | TO-264-3, TO-264AA | 3 | yes | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 313W Tc | 123A | 369A | 0.01Ohm | 500 mJ | N-Channel | 10.11pF @ 25V | 10m Ω @ 50A, 10V | 4V @ 250μA | 123A Tc | 350nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FCH47N60 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb2570-datasheets-0194.pdf | TO-247-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 417W Tc | TO-247AD | 47A | 141A | 0.073Ohm | 1800 mJ | N-Channel | 8pF @ 25V | 70m Ω @ 23.5A, 10V | 5V @ 250μA | 47A Tc | 270nC @ 10V | 10V | ±30V |
