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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQI9N50CTU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp19n10l-datasheets-4640.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 135W Tc | 9A | 36A | 0.8Ohm | 360 mJ | N-Channel | 1.03pF @ 25V | 800m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB050N06NGATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipb050n06ngatma1-datasheets-9449.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 60V | 300W Tc | N-Channel | 6.1pF @ 30V | 4.7mOhm @ 100A, 10V | 4V @ 270μA | 100A Tc | 167nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD8874 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd8874-datasheets-9380.pdf | 30V | 116A | TO-252-3 | Lead Free | 2 | 10 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | 110W | GULL WING | Single | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 2.99nF | 9 ns | 96ns | 37 ns | 47 ns | 116A | 20V | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | TO-252AA | 5.1mOhm | 240 mJ | 30V | 5.1 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| IPI60R299CPXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipl65r310e6auma1-datasheets-8914.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3 | 600V | 96W Tc | N-Channel | 1.1pF @ 100V | 299mOhm @ 6.6A, 10V | 3.5V @ 440μA | 11A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPB16N50C3ATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spb16n50c3atma1-datasheets-9491.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 560V | 160W Tc | N-Channel | 1.6pF @ 25V | 280mOhm @ 10A, 10V | 3.9V @ 675μA | 16A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP80N04MHE-S18-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np80n04nhes18ay-datasheets-3455.pdf | TO-220-3 | TO-220 | 40V | 1.8W Ta 120W Tc | N-Channel | 3.3pF @ 25V | 8mOhm @ 40A, 10V | 4V @ 250μA | 80A Tc | 60nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPB18P06PGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-spb18p06pgatma1-datasheets-9495.pdf | -60V | -18.6A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.5mm | 4.4mm | Lead Free | 2 | 13 Weeks | No SVHC | 3 | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | 1 | Single | NOT SPECIFIED | 81.1W | 1 | Not Qualified | 175°C | R-PSSO-G2 | 12 ns | 5.8ns | 11 ns | 25 ns | -18.7A | 20V | SILICON | DRAIN | 60V | -3V | 81.1W Ta | 74.8A | -60V | P-Channel | 860pF @ 25V | -3 V | 130m Ω @ 13.2A, 10V | 4V @ 1mA | 18.7A Ta | 28nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| FDS6685 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds6685-datasheets-9501.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 8.8A | 0.02Ohm | P-Channel | 1.604pF @ 15V | 20m Ω @ 8.8A, 10V | 3V @ 250μA | 8.8A Ta | 24nC @ 5V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R310CFDFKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipw65r310cfdfksa1-datasheets-9503.pdf | TO-247-3 | PG-TO247-3 | 650V | 104.2W Tc | N-Channel | 1.1pF @ 100V | 310mOhm @ 4.4A, 10V | 4.5V @ 440μA | 11.4A Tc | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC025N03LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bsc025n03lsgatma1-datasheets-9438.pdf | 8-PowerTDFN | Contains Lead | 8 | 26 Weeks | 8 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | Halogen Free | DUAL | FLAT | 8 | 83W | 1 | 10 ns | 6.2ns | 6 ns | 36 ns | 100A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 83W Tc | 25A | 400A | 0.0036Ohm | N-Channel | 6100pF @ 15V | 2.5m Ω @ 30A, 10V | 2.2V @ 250μA | 25A Ta 100A Tc | 74nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDW6923 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdw6923-datasheets-9521.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | yes | EAR99 | unknown | e3 | TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.2W Ta | 3.5A | 30A | 0.045Ohm | P-Channel | 1.03pF @ 10V | 45m Ω @ 3.5A, 4.5V | 1.5V @ 250μA | 3.5A Ta | 16nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR7746TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr7746trpbf-datasheets-9480.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 12 Weeks | 3.949996g | No SVHC | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 7.9 ns | 30ns | 21 ns | 34 ns | 56A | 20V | 75V | 3.7V | 99W Tc | N-Channel | 3107pF @ 25V | 11.2m Ω @ 35A, 10V | 3.7V @ 100μA | 56A Tc | 89nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF13N50 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp6n25-datasheets-4396.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 56W Tc | TO-220AB | 13A | 52A | 0.48Ohm | 860 mJ | N-Channel | 2.3pF @ 25V | 430m Ω @ 6.25A, 10V | 5V @ 250μA | 12.5A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| RFP15P05 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-rfp15p05-datasheets-9548.pdf | TO-220-3 | TO-220-3 | 50V | 80W Tc | P-Channel | 1.15pF @ 25V | 150mOhm @ 15A, 10V | 4V @ 250μA | 15A Tc | 150nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF6N90 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqaf6n90-datasheets-9550.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 96W Tc | 4.5A | 18A | 710 mJ | N-Channel | 1.88pF @ 25V | 1.9 Ω @ 2.3A, 10V | 5V @ 250μA | 4.5A Tc | 52nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC160N10NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-bsc160n10ns3gatma1-datasheets-9132.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 60W | 1 | Not Qualified | R-PDSO-F5 | 13 ns | 15ns | 5 ns | 22 ns | 8.8A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60W Tc | 50 mJ | N-Channel | 1700pF @ 50V | 16m Ω @ 33A, 10V | 3.5V @ 33μA | 8.8A Ta 42A Tc | 25nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB80N07S405ATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipb80n07s405atma1-datasheets-9327.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB8N60CFTM | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqd2n90tf-datasheets-5482.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | AVALANCHE RATED | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 147W Tc | 6.26A | 25A | 160 mJ | N-Channel | 1.255pF @ 25V | 1.5 Ω @ 3.13A, 10V | 4V @ 250μA | 6.26A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5301TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfh5301trpbf-datasheets-9339.pdf | 8-PowerVDFN | 6mm | 850μm | 5mm | Lead Free | 12 Weeks | No SVHC | 1.85MOhm | 8 | No | 110W | 1 | PQFN (5x6) Single Die | 5.114nF | 21 ns | 78ns | 23 ns | 22 ns | 100A | 20V | 30V | 1.8V | 3.6W Ta 110W Tc | 1.55mOhm | 30V | N-Channel | 5114pF @ 15V | 1.8 V | 1.85mOhm @ 50A, 10V | 2.35V @ 100μA | 35A Ta 100A Tc | 77nC @ 10V | 1.85 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSC060P03NS3EGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc060p03ns3egatma1-datasheets-9346.pdf | 8-PowerTDFN | Contains Lead | 5 | 13 Weeks | No SVHC | 8 | no | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | Not Qualified | R-PDSO-F5 | 139ns | 17.7A | 25V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | -2.5V | 2.5W Ta 83W Tc | 200A | 0.006Ohm | P-Channel | 6020pF @ 15V | 6m Ω @ 50A, 10V | 3.1V @ 150μA | 17.7A Ta 100A Tc | 81nC @ 10V | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| IRFR7540TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr7540trpbf-datasheets-9329.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 12 Weeks | 3.949996g | No SVHC | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 8.7 ns | 38ns | 32 ns | 59 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.7V | 140W Tc | TO-252AA | 440A | 0.0048Ohm | N-Channel | 4360pF @ 25V | 4.8m Ω @ 66A, 10V | 3.7V @ 100μA | 90A Tc | 130nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| STD5406NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-std5406nt4g-datasheets-9207.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3 | LIFETIME (Last Updated: 17 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 1 | FET General Purpose Power | R-PSSO-G2 | 70A | 20V | SILICON | SWITCHING | 40V | 40V | 3W Ta 100W Tc | 12.2A | 150A | 0.01Ohm | 450 mJ | N-Channel | 2500pF @ 32V | 10m Ω @ 30A, 10V | 3.5V @ 250μA | 12.2A Ta 70A Tc | 45nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NDD60N360U1T4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ndp6030pl-datasheets-4617.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 600V | 114W Tc | N-Channel | 790pF @ 50V | 360mOhm @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 26nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP8443 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds3570-datasheets-5036.pdf | TO-220-3 | 3 | unknown | NO | SINGLE | 3 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 188W Tc | TO-220AB | 80A | 0.0061Ohm | 531 mJ | N-Channel | 9.31pF @ 25V | 3.5m Ω @ 80A, 10V | 4V @ 250μA | 20A Ta 80A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS4435A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds4435a-datasheets-9379.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | 30 | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 9A | 0.017Ohm | P-Channel | 2.01pF @ 15V | 17m Ω @ 9A, 10V | 2V @ 250μA | 9A Ta | 30nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R500CEBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipd50r500cebtma1-datasheets-9366.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 6 Weeks | no | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 57W Tc | TO-252AA | 24A | 0.5Ohm | 129 mJ | N-Channel | 433pF @ 100V | 500m Ω @ 2.3A, 13V | 3.5V @ 200μA | 7.6A Tc | 18.7nC @ 10V | Super Junction | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS7760A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds6689s-datasheets-7615.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 15A | 0.0055Ohm | N-Channel | 3.514pF @ 15V | 5.5m Ω @ 15A, 10V | 3V @ 250μA | 15A Ta | 55nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP12N60 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp12n60-datasheets-9421.pdf | TO-220-3 | 3 | yes | unknown | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 180W Tc | TO-220AB | 10.5A | 42A | 0.7Ohm | 790 mJ | N-Channel | 1.9pF @ 25V | 700m Ω @ 5.3A, 10V | 5V @ 250μA | 10.5A Tc | 54nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSF024N03LT3GXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsf024n03lt3gxuma1-datasheets-9249.pdf | 3-WDSON | 3 | 3 | yes | EAR99 | No | BOTTOM | 3 | 2.2W | 1 | 5.7 ns | 5.6ns | 4.8 ns | 29 ns | 15A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 2.2W Ta 42W Tc | 400A | N-Channel | 5500pF @ 15V | 2.4m Ω @ 20A, 10V | 2.2V @ 250μA | 15A Ta 106A Tc | 71nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDP16N50 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdpf5n50tydtu-datasheets-5415.pdf | TO-220-3 | TO-220-3 | 500V | 200W Tc | N-Channel | 1.945pF @ 25V | 380mOhm @ 8A, 10V | 5V @ 250μA | 16A Tc | 45nC @ 10V | 10V | ±30V |
