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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BSZ0901NSIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz0901nsiatma1-datasheets-9901.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.1W | 1 | R-PDSO-N3 | 5 ns | 7.2ns | 4.6 ns | 27 ns | 25A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 69W Tc | N-Channel | 2600pF @ 15V | 2.1m Ω @ 20A, 10V | 2.2V @ 250μA | 25A Ta 40A Tc | 41nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SPP100N03S2-03 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spp100n03s203-datasheets-9765.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 30V | 300W Tc | TO-220AB | 100A | 400A | 0.0033Ohm | 810 mJ | N-Channel | 7.02pF @ 25V | 3.3m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDD6670AS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdd6670as-datasheets-9944.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 70W Ta | 76A | 100A | 0.008Ohm | N-Channel | 1.58pF @ 15V | 8m Ω @ 13.8A, 10V | 3V @ 1mA | 76A Ta | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPDH4N03LAG | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-ipdh4n03lag-datasheets-9767.pdf | 25V | 90A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | NOT SPECIFIED | 94W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 7ns | 4.6 ns | 29 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 94W Tc | TO-252AA | 360A | 0.0042Ohm | 150 mJ | 25V | N-Channel | 3200pF @ 15V | 4.2m Ω @ 60A, 10V | 2V @ 40μA | 90A Tc | 26nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| BSZ028N04LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsz028n04lsatma1-datasheets-9771.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | 4ns | 40A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 63W Tc | 21A | 160A | 100 mJ | N-Channel | 2300pF @ 20V | 2.8m Ω @ 20A, 10V | 21A Ta 40A Tc | 32nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NVD6828NLT4G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvd6828nlt4gvf01-datasheets-9781.pdf | 4 Weeks | ACTIVE (Last Updated: 6 days ago) | yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDZ7064N | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdz7064n-datasheets-9786.pdf | 30-WFBGA | 30 | no | unknown | NOT SPECIFIED | YES | BOTTOM | BALL | NOT SPECIFIED | 30 | NOT SPECIFIED | 1 | COMMERCIAL | R-PBGA-B30 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.2W Ta | 13.5A | 60A | 0.007Ohm | N-Channel | 3.843pF @ 15V | 7m Ω @ 14.5A, 10V | 2V @ 250μA | 13.5A Ta | 43nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| IRF8788TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf8788trpbf-datasheets-9612.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 12 Weeks | No SVHC | 2.8MOhm | 8 | EAR99 | No | 2.5W | 1 | FET General Purpose Power | 23 ns | 24ns | 11 ns | 23 ns | 24A | 20V | Single | 2.5W Ta | 30V | N-Channel | 5720pF @ 15V | 1.8 V | 2.8m Ω @ 24A, 10V | 2.35V @ 100μA | 24A Ta | 66nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDP10AN06A0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdp10an06a0-datasheets-9806.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 135W Tc | TO-220AB | 12A | 0.0105Ohm | 429 mJ | N-Channel | 1.84pF @ 25V | 10.5m Ω @ 75A, 10V | 4V @ 250μA | 12A Ta 75A Tc | 37nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FQA6N90 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqaf34n25-datasheets-3313.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 198W Tc | 6.4A | 25.6A | 715 mJ | N-Channel | 1.88pF @ 25V | 1.9 Ω @ 3.2A, 10V | 5V @ 250μA | 6.4A Tc | 52nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| FQP55N06 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp9n25c-datasheets-5272.pdf | TO-220-3 | 3 | yes | unknown | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 133W Tc | TO-220AB | 55A | 220A | 0.02Ohm | 545 mJ | N-Channel | 1.69pF @ 25V | 20m Ω @ 27.5A, 10V | 4V @ 250μA | 55A Tc | 46nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| FQI12N60TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqi12n60tu-datasheets-9828.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 3.13W Ta 180W Tc | 10.5A | 42A | 0.7Ohm | 790 mJ | N-Channel | 1.9pF @ 25V | 700m Ω @ 5.3A, 10V | 5V @ 250μA | 10.5A Tc | 54nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IRF9630 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-irf9630-datasheets-9830.pdf | TO-220-3 | 3 | no | unknown | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 74W Tc | TO-220AB | 6.5A | 26A | 0.8Ohm | 500 mJ | P-Channel | 700pF @ 25V | 800m Ω @ 3.9A, 10V | 4V @ 250μA | 6.5A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDD6688S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdfs2p102a-datasheets-8319.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 69W Ta | 88A | 100A | 0.0051Ohm | N-Channel | 3.29pF @ 15V | 5.1m Ω @ 18.5A, 10V | 3V @ 1mA | 88A Ta | 81nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSP299H6327XUSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bsp299h6327xusa1-datasheets-9696.pdf&product=infineontechnologies-bsp299h6327xusa1-6840237 | TO-261-4, TO-261AA | 6.5mm | 1.6mm | 3.5mm | Lead Free | 4 | 10 Weeks | No SVHC | 4 | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | Halogen Free | DUAL | GULL WING | 4 | Single | 1.5W | 1 | 8 ns | 15ns | 30 ns | 55 ns | 400mA | 20V | 500V | SILICON | DRAIN | 3V | 1.8W Ta | 4Ohm | 500V | N-Channel | 400pF @ 25V | 3 V | 4 Ω @ 400mA, 10V | 4V @ 1mA | 400mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||
| IPD90N03S4L03ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-ipd90n03s4l03atma1-datasheets-9584.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | Tin | not_compliant | e3 | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 9 ns | 6ns | 7 ns | 37 ns | 90A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 94W Tc | 85 mJ | N-Channel | 5100pF @ 25V | 3.3m Ω @ 90A, 10V | 2.2V @ 45μA | 90A Tc | 75nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| IRFH7545TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfh7545trpbf-datasheets-9658.pdf | 8-PowerTDFN | 6.15mm | 1.17mm | 5.1mm | Lead Free | 12 Weeks | 8 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 8.6 ns | 26ns | 16 ns | 43 ns | 85A | 20V | 60V | 83W Tc | N-Channel | 3890pF @ 25V | 5.2m Ω @ 51A, 10V | 3.7V @ 100μA | 85A Tc | 110nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BSC025N03MSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-bsc025n03msgatma1-datasheets-9649.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 83W | 1 | Not Qualified | R-PDSO-F5 | 22 ns | 11ns | 29 ns | 23A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 83W Tc | 400A | 0.003Ohm | N-Channel | 7600pF @ 15V | 2.5m Ω @ 30A, 10V | 2V @ 250μA | 23A Ta . 100A Tc | 98nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IPP100N04S204AKSA2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp100n04s204aksa2-datasheets-9560.pdf | TO-220-3 | PG-TO220-3-1 | 40V | 300W Tc | N-Channel | 5.3pF @ 25V | 3.6mOhm @ 80A, 10V | 4V @ 250μA | 100A Tc | 172nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC0901NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc0901nsatma1-datasheets-9232.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 69W | 1 | Not Qualified | R-PDSO-F5 | 5.4 ns | 6.8ns | 4.8 ns | 28 ns | 100A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 69W Tc | 400A | 0.0024Ohm | N-Channel | 2800pF @ 15V | 1.9m Ω @ 30A, 10V | 2.2V @ 250μA | 28A Ta 100A Tc | 44nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| FDZ372NZ | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdz372nz-datasheets-9571.pdf | 4-XFBGA, WLCSP | 4-WLCSP (1x1) | 20V | 1.7W Ta | N-Channel | 685pF @ 10V | 50mOhm @ 2A, 4.5V | 1V @ 250μA | 4.7A Ta | 9.8nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTB75N06G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntb75n06g-datasheets-9582.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 60V | 2.4W Ta 214W Tj | N-Channel | 4.51pF @ 25V | 9.5mOhm @ 37.5A, 10V | 4V @ 250μA | 75A Ta | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW50R299CPFKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/rochesterelectronicsllc-ipw50r299cpfksa1-datasheets-9592.pdf | TO-247-3 | PG-TO247-3 | 550V | 104W Tc | N-Channel | 1.19pF @ 100V | 299mOhm @ 6.6A, 10V | 3.5V @ 440μA | 12A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC12DN20NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-bsc12dn20ns3gatma1-datasheets-9459.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | 6 ns | 4ns | 3 ns | 10 ns | 11.3A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50W Tc | 45A | 0.125Ohm | 60 mJ | N-Channel | 680pF @ 100V | 125m Ω @ 5.7A, 10V | 4V @ 25μA | 11.3A Tc | 8.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| FDS7779Z | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds7779z-datasheets-9610.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 16A | 50A | 0.0072Ohm | P-Channel | 3.8pF @ 15V | 7.2m Ω @ 16A, 10V | 3V @ 250μA | 16A Ta | 98nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| HUF75345S3S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75345s3s-datasheets-9647.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | e0 | TIN LEAD | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 325W Tc | 75A | 0.007Ohm | N-Channel | 4pF @ 25V | 7m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 275nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFR6215TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr6215trpbf-datasheets-6749.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 110W Tc | TO-252AA | 13A | 44A | 0.295Ohm | 310 mJ | P-Channel | 860pF @ 25V | 295m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FQPF34N20 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf34n20-datasheets-9679.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 55W Tc | TO-220AB | 17.5A | 70A | 0.075Ohm | 640 mJ | N-Channel | 3.1pF @ 25V | 75m Ω @ 8.75A, 10V | 5V @ 250μA | 17.5A Tc | 78nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| FQA34N20L | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa34n20l-datasheets-9681.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 210W Tc | 34A | 136A | 0.08Ohm | 640 mJ | N-Channel | 3.9pF @ 25V | 75m Ω @ 17A, 10V | 2V @ 250μA | 34A Tc | 72nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFR7746TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr7746trpbf-datasheets-9480.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 12 Weeks | 3.949996g | No SVHC | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 7.9 ns | 30ns | 21 ns | 34 ns | 56A | 20V | 75V | 3.7V | 99W Tc | N-Channel | 3107pF @ 25V | 11.2m Ω @ 35A, 10V | 3.7V @ 100μA | 56A Tc | 89nC @ 10V | 6V 10V | ±20V |
