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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| HUF75344A3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75344a3-datasheets-0076.pdf | TO-3P-3, SC-65-3 | 3 | unknown | NO | SINGLE | 3 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 55V | 55V | 288.5W Tc | 75A | 300A | 0.008Ohm | 1153 mJ | N-Channel | 4.855pF @ 25V | 8m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 208nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BFL4036-1E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bfn19h6327xtsa1-datasheets-7318.pdf | TO-220-3 Full Pack | TO-220F-3FS | 500V | 2W Ta 37W Tc | N-Channel | 1000pF @ 30V | 520mOhm @ 7A, 10V | 9.6A Tc | 38.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF830 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf830-datasheets-0089.pdf | TO-220-3 | 3 | no | unknown | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 74W Tc | TO-220AB | 4.5A | 18A | N-Channel | 610pF @ 25V | 1.5 Ω @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPA65R190C6XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipw65r190c6fksa1-datasheets-3876.pdf | TO-220-3 Full Pack | PG-TO220 Full Pack | 650V | 34W Tc | N-Channel | 1.62pF @ 100V | 190mOhm @ 7.3A, 10V | 3.5V @ 730μA | 20.2A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C55NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs4c55nt1g-datasheets-0097.pdf | 16 Weeks | 8 | 770mW | 1.972nF | 78A | 30V | 3.4 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75639S3S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75639s3s-datasheets-0103.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 200W Tc | 56A | 0.025Ohm | N-Channel | 2pF @ 25V | 25m Ω @ 56A, 10V | 4V @ 250μA | 56A Tc | 130nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPC100N04S5L2R6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipc100n04s5l2r6atma1-datasheets-0113.pdf | 8-PowerTDFN | 3 | 16 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 75W Tc | 100A | 400A | 0.0036Ohm | 66 mJ | N-Channel | 2925pF @ 25V | 2.6m Ω @ 50A, 10V | 2V @ 30μA | 100A Tc | 55nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| FQA10N80C | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa7n90-datasheets-2821.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 240W Tc | 10A | 40A | 920 mJ | N-Channel | 2.8pF @ 25V | 1.1 Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| BSC046N02KSGAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc046n02ksgauma1-datasheets-0135.pdf | 8-PowerTDFN | 6.35mm | 1.1mm | 5.35mm | 5 | 26 Weeks | No SVHC | 8 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | YES | DUAL | FLAT | NOT SPECIFIED | 8 | Single | NOT SPECIFIED | 48W | 1 | Not Qualified | R-PDSO-F5 | 15 ns | 117ns | 6 ns | 34 ns | 80A | 12V | SILICON | DRAIN | SWITCHING | 950mV | 2.8W Ta 48W Tc | 19A | 200A | 0.0046Ohm | 151 mJ | 20V | N-Channel | 4100pF @ 10V | 950 mV | 4.6m Ω @ 50A, 4.5V | 1.2V @ 110μA | 19A Ta 80A Tc | 27.6nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||
| RFP70N03 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-rfp70n03-datasheets-0044.pdf | TO-220-3 | 3 | no | AVALANCHE RATED | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | TO-220AB | 70A | 200A | 0.01Ohm | N-Channel | 3.3pF @ 25V | 10m Ω @ 70A, 10V | 4V @ 250μA | 70A Tc | 260nC @ 20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF6620TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf6620trpbf-datasheets-9810.pdf | 20V | 27A | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 12 Weeks | No SVHC | 5 | EAR99 | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 18 ns | 80ns | 6.6 ns | 20 ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 89W Tc | 220A | 0.0027Ohm | 39 mJ | 20V | N-Channel | 4130pF @ 10V | 2.45 V | 2.7m Ω @ 27A, 10V | 2.45V @ 250μA | 27A Ta 150A Tc | 42nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| HUF75637S3S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf76423d3s-datasheets-4796.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 155W Tc | 44A | 0.03Ohm | N-Channel | 1.7pF @ 25V | 30m Ω @ 44A, 10V | 4V @ 250μA | 44A Tc | 108nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDW258P | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdz294n-datasheets-7725.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | yes | e3 | TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 1.3W Ta | 9A | 0.011Ohm | P-Channel | 5.049pF @ 5V | 11m Ω @ 9A, 4.5V | 1.5V @ 250μA | 9A Ta | 73nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| IPI80N07S405AKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipb80n07s405atma1-datasheets-9327.pdf | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC0901NSIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsc0901nsiatma1-datasheets-9997.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | R-PDSO-F5 | 5 ns | 7.2ns | 4.6 ns | 27 ns | 28A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 69W Tc | 400A | 0.0026Ohm | 45 mJ | N-Channel | 2600pF @ 15V | 2m Ω @ 30A, 10V | 2.2V @ 250μA | 28A Ta 100A Tc | 20nC @ 15V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| RJK0328DPB-00#J0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | SC-100, SOT-669 | LFPAK | 30V | N-Channel | 6.38pF @ 10V | 2.1mOhm @ 30A, 10V | 60A Ta | 42nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4096LS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4096ls-datasheets-0006.pdf | TO-220-3 Full Pack | 3 | HIGH RELIABILITY | NO | SINGLE | 3 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 2W Ta 33W Tc | TO-220AB | 8A | 32A | 0.85Ohm | 397 mJ | N-Channel | 600pF @ 30V | 850m Ω @ 4A, 10V | 7.1A Tc | 24nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7451TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7451trpbf-datasheets-9957.pdf | 150V | 3.6A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | 8 | EAR99 | No | DUAL | GULL WING | 2.5W | 1 | 10 ns | 4.2ns | 15 ns | 17 ns | 3.6A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta | 29A | 0.09Ohm | 150V | N-Channel | 990pF @ 25V | 90m Ω @ 2.2A, 10V | 5.5V @ 250μA | 3.6A Ta | 41nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IPI50R199CPXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi50r199cpxksa1-datasheets-0016.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3 | 500V | 139W Tc | N-Channel | 1.8pF @ 100V | 199mOhm @ 9.9A, 10V | 3.5V @ 660μA | 17A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDZ208P | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdz208p-datasheets-0018.pdf | 30-WFBGA | 30 | no | unknown | NOT SPECIFIED | YES | BOTTOM | BALL | NOT SPECIFIED | 30 | NOT SPECIFIED | 1 | COMMERCIAL | R-PBGA-B30 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.2W Ta | 12.5A | 60A | 0.0105Ohm | P-Channel | 2.409pF @ 15V | 10.5m Ω @ 12.5A, 10V | 3V @ 250μA | 12.5A Ta | 35nC @ 5V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| FQB6N60TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb6n60tm-datasheets-0020.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 3.13W Ta 130W Tc | 6.2A | 24.8A | 440 mJ | N-Channel | 1pF @ 25V | 1.5 Ω @ 3.1A, 10V | 5V @ 250μA | 6.2A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| BSZ12DN20NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz12dn20ns3gatma1-datasheets-9788.pdf | 8-PowerTDFN | Contains Lead | 5 | 13 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | S-PDSO-N5 | 6 ns | 4ns | 3 ns | 10 ns | 11.3A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50W Tc | 45A | 0.125Ohm | 60 mJ | N-Channel | 680pF @ 100V | 125m Ω @ 5.7A, 10V | 4V @ 25μA | 11.3A Tc | 8.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| NTB6412ANT4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd24n06lt4-datasheets-4681.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 100V | 167W Tc | N-Channel | 3.5pF @ 25V | 18.2mOhm @ 58A, 10V | 4V @ 250μA | 58A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R250CPATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipd50n06s409atma1-datasheets-4767.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 650V | 104W Tc | N-Channel | 1.2pF @ 100V | 250mOhm @ 7.8A, 10V | 3.5V @ 440μA | 12A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ035N03LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz035n03lsgatma1-datasheets-9981.pdf | 8-PowerTDFN | 8 | 18 Weeks | no | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-N8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.1W Ta 69W Tc | 40A | 160A | 0.0057Ohm | 150 mJ | N-Channel | 4400pF @ 15V | 3.5m Ω @ 20A, 10V | 2.2V @ 250μA | 20A Ta 40A Tc | 56nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPA60R250CPXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipb26cn10ngatma1-datasheets-5216.pdf | TO-220-3 Full Pack | PG-TO220-FP | 650V | 33W Tc | N-Channel | 1.3pF @ 100V | 250mOhm @ 7.8A, 10V | 3.5V @ 440μA | 12A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP100N03S2-03 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spp100n03s203-datasheets-9765.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 30V | 300W Tc | TO-220AB | 100A | 400A | 0.0033Ohm | 810 mJ | N-Channel | 7.02pF @ 25V | 3.3m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDD6670AS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdd6670as-datasheets-9944.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 70W Ta | 76A | 100A | 0.008Ohm | N-Channel | 1.58pF @ 15V | 8m Ω @ 13.8A, 10V | 3V @ 1mA | 76A Ta | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPDH4N03LAG | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-ipdh4n03lag-datasheets-9767.pdf | 25V | 90A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | NOT SPECIFIED | 94W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 7ns | 4.6 ns | 29 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 94W Tc | TO-252AA | 360A | 0.0042Ohm | 150 mJ | 25V | N-Channel | 3200pF @ 15V | 4.2m Ω @ 60A, 10V | 2V @ 40μA | 90A Tc | 26nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| BSZ028N04LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsz028n04lsatma1-datasheets-9771.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | 4ns | 40A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 63W Tc | 21A | 160A | 100 mJ | N-Channel | 2300pF @ 20V | 2.8m Ω @ 20A, 10V | 21A Ta 40A Tc | 32nC @ 10V | 4.5V 10V | ±20V |
