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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRL3705NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl3705nstrlpbf-datasheets-5052.pdf | 55V | 89A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 10.16mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 10mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 170W | 1 | R-PSSO-G2 | 12 ns | 140ns | 78 ns | 37 ns | 89A | 16V | SILICON | DRAIN | SWITCHING | 2V | 3.8W Ta 170W Tc | 140 ns | 55V | N-Channel | 3600pF @ 25V | 2 V | 10m Ω @ 46A, 10V | 2V @ 250μA | 89A Tc | 98nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||
| NDP7050 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ndp7050-datasheets-5077.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 50V | 50V | 150W Tc | TO-220AB | 75A | 225A | 0.013Ohm | 550 mJ | N-Channel | 3.6pF @ 25V | 13m Ω @ 40A, 10V | 4V @ 250μA | 75A Tc | 115nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDAF69N25 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb8442-datasheets-3717.pdf | TO-3P-3 Full Pack | 3 | yes | FAST SWITCHING | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 115W Tc | 34A | 136A | 0.041Ohm | 1894 mJ | N-Channel | 4.64pF @ 25V | 41m Ω @ 17A, 10V | 5V @ 250μA | 34A Tc | 100nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| FDAF59N30 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdaf59n30-datasheets-5099.pdf | TO-3P-3 Full Pack | 3 | yes | FAST SWITCHING | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-XSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 300V | 300V | 161W Tc | 34A | 136A | 0.056Ohm | 1734 mJ | N-Channel | 4.67pF @ 25V | 56m Ω @ 17A, 10V | 5V @ 250μA | 34A Tc | 100nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IPZ60R125P6FKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipz60r125p6fksa1-datasheets-5110.pdf | TO-247-4 | PG-TO247-4 | 600V | 219W Tc | N-Channel | 3.33pF @ 100V | 99mOhm @ 14.5A, 10V | 4.5V @ 1.21mA | 37.9A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS282Z E3180A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bts282ze3180a-datasheets-5113.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | PG-TO220-7-180 | 49V | 300W Tc | N-Channel | 4.8pF @ 25V | 6.5mOhm @ 36A, 10V | 2V @ 240μA | 80A Tc | 232nC @ 10V | Temperature Sensing Diode | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB6N70TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb6n70tm-datasheets-5114.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 3.13W Ta 142W Tc | 6.2A | 24.8A | 600 mJ | N-Channel | 1.4pF @ 25V | 1.5 Ω @ 3.1A, 10V | 5V @ 250μA | 6.2A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| RJK60S3DPP-E0#T2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-rjk60s3dppe0t2-datasheets-5125.pdf | TO-220-3 Full Pack | TO-220FP | 600V | 27.7W Tc | N-Channel | 720pF @ 25V | 440mOhm @ 6A, 10V | 12A Ta | 13.6nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6894MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf6894mtrpbf-datasheets-5005.pdf&product=infineontechnologies-irf6894mtrpbf-6836801 | DirectFET™ Isometric MX | Lead Free | 3 | 13 Weeks | 1.3MOhm | 7 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | 54W | 1 | FET General Purpose Power | R-XBCC-N3 | 16 ns | 42ns | 14 ns | 20 ns | 32A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 54W Tc | 33A | 260A | 25V | N-Channel | 4160pF @ 13V | 1.3m Ω @ 33A, 10V | 2.1V @ 100μA | 32A Ta 160A Tc | 39nC @ 4.5V | Schottky Diode (Body) | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||
| NVB5860NLT4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nvb5860nlt4g-datasheets-5136.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK-3 | 60V | 283W Tc | N-Channel | 13.216pF @ 25V | 3mOhm @ 20A, 10V | 3V @ 250μA | 220A Ta | 220nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6646TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf6646trpbf-datasheets-5081.pdf | 80V | 12A | DirectFET™ Isometric MN | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 12 Weeks | No SVHC | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 17 ns | 20ns | 12 ns | 31 ns | 12mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4.9V | 2.8W Ta 89W Tc | 68A | 96A | 230 mJ | 80V | N-Channel | 2060pF @ 25V | 9.5m Ω @ 12A, 10V | 4.9V @ 150μA | 12A Ta 68A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| BSC019N06NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc019n06nsatma1-datasheets-5147.pdf | 8-PowerTDFN | 13 Weeks | 60V | 136W Ta | N-Channel | 5.25nF @ 30V | 1.95m Ω @ 50A, 10V | 3.3V @ 74μA | 100A Ta | 77nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDP7050L | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ndp7050l-datasheets-5161.pdf | TO-220-3 | 3 | yes | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 50V | 50V | 150W Tc | TO-220AB | 75A | 225A | 0.01Ohm | 550 mJ | N-Channel | 4pF @ 25V | 15m Ω @ 37.5A, 5V | 2V @ 250μA | 75A Tc | 115nC @ 5V | 5V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF7946TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-irf7946trpbf-datasheets-4884.pdf | DirectFET™ Isometric MX | Lead Free | 12 Weeks | No SVHC | 7 | EAR99 | No | 96W | 1 | FET General Purpose Power | 20 ns | 49ns | 41 ns | 54 ns | 90A | 20V | Single | 40V | 3V | 96W Tc | N-Channel | 6852pF @ 25V | 3 V | 1.4m Ω @ 90A, 10V | 3.9V @ 150μA | 90A Tc | 212nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF6795MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf6795mtrpbf-datasheets-4565.pdf | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 12 Weeks | 7 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 75W | 1 | FET General Purpose Power | R-XBCC-N3 | 16 ns | 27ns | 11 ns | 16 ns | 32A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 75W Tc | 250A | 25V | N-Channel | 4280pF @ 13V | 1.8m Ω @ 32A, 10V | 2.35V @ 100μA | 32A Ta 160A Tc | 53nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IPC100N04S5L1R1ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipc100n04s5l1r1atma1-datasheets-5204.pdf | 8-PowerTDFN | 3 | 16 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 150W Tc | 100A | 400A | 0.0014Ohm | 480 mJ | N-Channel | 8250pF @ 25V | 1.1m Ω @ 50A, 10V | 2V @ 90μA | 100A Tc | 140nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| BSC011N03LSTATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc011n03lstatma1-datasheets-5049.pdf | 8-PowerTDFN | 5 | 13 Weeks | EAR99 | YES | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta 115W Tc | 37A | 400A | 0.0014Ohm | 190 mJ | N-Channel | 6300pF @ 15V | 1.1m Ω @ 30A, 10V | 2V @ 250μA | 39A Ta 100A Tc | 48nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AUIRFN8403TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | 8-PowerTDFN | 5.85mm | 1.17mm | 5mm | 5 | 11 Weeks | 8 | EAR99 | ULTRA LOW RESISTANCE | DUAL | FLAT | NOT SPECIFIED | IRFN8403 | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-F5 | 11 ns | 37ns | 26 ns | 33 ns | 95A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 4.3W Ta 94W Tc | 492A | 0.0033Ohm | N-Channel | 3174pF @ 25V | 3.3m Ω @ 50A, 10V | 3.9V @ 100μA | 95A Tc | 98nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| BSC027N06LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc027n06ls5atma1-datasheets-4918.pdf | 8-PowerTDFN | 5 | 26 Weeks | EAR99 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 83W Tc | 23A | 400A | 0.0027Ohm | 100 mJ | N-Channel | 4400pF @ 30V | 2.7m Ω @ 50A, 10V | 2.3V @ 49μA | 100A Tc | 30nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FQA13N80 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqaf10n80-datasheets-3778.pdf | TO-3P-3, SC-65-3 | TO-3PN | 800V | 300W Tc | N-Channel | 3.5pF @ 25V | 750mOhm @ 6.3A, 10V | 5V @ 250μA | 12.6A Tc | 88nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4099LS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4099ls-datasheets-4949.pdf | TO-220-3 Full Pack | TO-220FI(LS) | 600V | 2W Ta 35W Tc | N-Channel | 750pF @ 30V | 940mOhm @ 4A, 10V | 5V @ 1mA | 6.9A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC016N04LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc016n04lsgatma1-datasheets-4924.pdf | 8-PowerTDFN | 5 | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 2.5W Ta 139W Tc | 100A | 400A | 0.0023Ohm | 295 mJ | N-Channel | 12000pF @ 20V | 1.6m Ω @ 50A, 10V | 2V @ 85μA | 31A Ta 100A Tc | 150nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FDAF62N28 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdaf62n28-datasheets-4980.pdf | TO-3P-3 Full Pack | 3 | yes | FAST SWITCHING | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-XSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 280V | 280V | 165W Tc | 36A | 144A | 0.051Ohm | 1919 mJ | N-Channel | 4.63pF @ 25V | 51m Ω @ 18A, 10V | 5V @ 250μA | 36A Tc | 100nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| FQAF90N08 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqaf90n08-datasheets-4988.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 80V | 80V | 100W Tc | 56A | 224A | 0.016Ohm | 1360 mJ | N-Channel | 3.25pF @ 25V | 16m Ω @ 28A, 10V | 4V @ 250μA | 56A Tc | 110nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| BSC028N06NSTATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/infineontechnologies-bsc028n06nstatma1-datasheets-4933.pdf | 8-PowerTDFN | 5 | 26 Weeks | EAR99 | YES | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3W Ta 100W Tc | 23A | 400A | 0.0028Ohm | 100 mJ | N-Channel | 3375pF @ 30V | 2.8m Ω @ 50A, 10V | 3.3V @ 50μA | 24A Ta 100A Tc | 49nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQAF70N15 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqaf70n15-datasheets-4995.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 150V | 150V | 130W Tc | 44A | 176A | 0.028Ohm | 1000 mJ | N-Channel | 5.4pF @ 25V | 28m Ω @ 22A, 10V | 4V @ 250μA | 44A Tc | 175nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| FQPF90N10V2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf90n10v2-datasheets-5014.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 83W Tc | TO-220AB | 90A | 360A | 0.01Ohm | 2430 mJ | N-Channel | 6.15pF @ 25V | 10m Ω @ 45A, 10V | 4V @ 250μA | 90A Tc | 191nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| HUFA75344G3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76413dk8t-datasheets-6085.pdf | TO-247-3 | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 285W Tc | 75A | 0.008Ohm | N-Channel | 3.2pF @ 25V | 8m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 210nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDP7030L | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds2070n7-datasheets-4576.pdf | TO-220-3 | 3 | yes | LOGIC LEVEL COMPATIBLE | unknown | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 68W Tc | TO-220AB | 80A | 240A | 0.007Ohm | 114 mJ | N-Channel | 2.44pF @ 15V | 7m Ω @ 40A, 10V | 3V @ 250μA | 80A Ta | 33nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDS3570 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds6162n3-datasheets-3624.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 2.5W Ta | 9A | 0.02Ohm | N-Channel | 2.75pF @ 25V | 20m Ω @ 9A, 10V | 4V @ 250μA | 9A Ta | 76nC @ 10V | 6V 10V | ±20V |
