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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF6794MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6794mtr1pbf-datasheets-5346.pdf | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | No SVHC | 1.3mOhm | 5 | No | 100W | DIRECTFET™ MX | 4.42nF | 15 ns | 25ns | 9.6 ns | 9.7 ns | 32A | 20V | 25V | 2.8W Ta 100W Tc | 3mOhm | 25V | N-Channel | 4420pF @ 13V | 1.8 V | 1.7mOhm @ 32A, 10V | 2.35V @ 100μA | 32A Ta 200A Tc | 47nC @ 4.5V | Schottky Diode (Body) | 1.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSC037N08NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc037n08ns5atma1-datasheets-5352.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 26 Weeks | 506.605978mg | 8 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 2.5W | 1 | 150°C | R-PDSO-F5 | 14 ns | 10ns | 7 ns | 26 ns | 100A | 20V | 80V | SILICON | DRAIN | SWITCHING | 3V | 2.5W Ta 114W Tc | 22A | 400A | 0.0037Ohm | 80V | N-Channel | 4200pF @ 40V | 3.7m Ω @ 50A, 10V | 3.8V @ 72μA | 100A Tc | 58nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FDS7788 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds7788-datasheets-5430.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 18A | 0.004Ohm | N-Channel | 3.845pF @ 15V | 4m Ω @ 18A, 10V | 3V @ 250μA | 18A Ta | 48nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA16N25C | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa16n25c-datasheets-5453.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 180W Tc | 17.8A | 71.2A | 0.27Ohm | 410 mJ | N-Channel | 1.08pF @ 25V | 270m Ω @ 8.9A, 10V | 4V @ 250μA | 17.8A Tc | 53.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC014N04LSTATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc014n04lstatma1-datasheets-5282.pdf | 8-PowerTDFN | 3 | 26 Weeks | EAR99 | ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3W Ta 115W Tc | 32A | 400A | 0.0019Ohm | 170 mJ | N-Channel | 6020pF @ 20V | 1.4m Ω @ 50A, 10V | 2V @ 250μA | 33A Ta 100A Tc | 85nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5418DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si5418dut1ge3-datasheets-5479.pdf | PowerPAK® ChipFET™ Single | 3mm | 750μm | 1.9mm | Lead Free | 3 | 14 Weeks | Unknown | 14.5MOhm | 8 | EAR99 | e3 | MATTE TIN | DUAL | NO LEAD | 260 | 8 | 1 | 40 | 3.1W | 1 | Not Qualified | R-PDSO-N3 | 20 ns | 10ns | 10 ns | 20 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 3.1W Ta 31W Tc | 40A | 30V | N-Channel | 1350pF @ 15V | 14.5m Ω @ 7.7A, 10V | 3V @ 250μA | 12A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FQPF12N60 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqpf12n60-datasheets-5500.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 55W Tc | 5.8A | 23A | 0.7Ohm | 790 mJ | N-Channel | 1.9pF @ 25V | 700m Ω @ 2.9A, 10V | 5V @ 250μA | 5.8A Tc | 54nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRL2505STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irl2505strlpbf-datasheets-5505.pdf | 55V | 104A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 8mOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 200W | 1 | R-PSSO-G2 | 12 ns | 160ns | 84 ns | 43 ns | 104A | 16V | 55V | SILICON | DRAIN | SWITCHING | 2V | 3.8W Ta 200W Tc | 210 ns | 500 mJ | 55V | N-Channel | 5000pF @ 25V | 2 V | 8m Ω @ 54A, 10V | 2V @ 250μA | 104A Tc | 130nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||
| RJK60S5DPE-00#J3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-rjk60s5dpe00j3-datasheets-5519.pdf | SC-83 | 4-LDPAK | 600V | 125W Tc | N-Channel | 1.6pF @ 25V | 178mOhm @ 10A, 10V | 20A Tc | 27nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC079N10NSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc079n10nsgatma1-datasheets-5465.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 156W | 1 | Not Qualified | R-PDSO-F5 | 24 ns | 40ns | 11 ns | 38 ns | 13.4A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 156W Tc | 400A | 0.0079Ohm | 377 mJ | N-Channel | 5900pF @ 50V | 7.9m Ω @ 50A, 10V | 4V @ 110μA | 13.4A Ta 100A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDD14AN06LA0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdd14an06la0-datasheets-5529.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | NOT SPECIFIED | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 125W Tc | TO-252AA | 9.5A | 0.015Ohm | 55 mJ | N-Channel | 2.81pF @ 25V | 11.6m Ω @ 50A, 10V | 3V @ 250μA | 9.5A Ta 50A Tc | 32nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75852G3 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-hufa75852g3-datasheets-5403.pdf | TO-247-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 500W Tc | 75A | 0.016Ohm | N-Channel | 7.69pF @ 25V | 16m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 480nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0701DPN-E0#T2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-rjk0701dpne0t2-datasheets-5405.pdf | TO-220-3 | TO-220AB | 75V | 200W Tc | N-Channel | 10pF @ 10V | 3.8mOhm @ 50A, 10V | 100A Ta | 140nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW20N60C3E8177FKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spd6722qcce-datasheets-3959.pdf | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVB5860NT4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nvb5860nt4g-datasheets-5260.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK-3 | 60V | 283W Tc | N-Channel | 10.76pF @ 25V | 3mOhm @ 75A, 10V | 4V @ 250μA | 220A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0701DPP-E0#T2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-rjk0701dppe0t2-datasheets-5262.pdf | TO-220-3 Full Pack | TO-220FP | 75V | 30W Tc | N-Channel | 10pF @ 10V | 3.8mOhm @ 50A, 10V | 100A Ta | 140nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK1001DPN-E0#T2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-220-3 | TO-220AB | 100V | 200W Tc | N-Channel | 10pF @ 10V | 5.5mOhm @ 40A, 10V | 80A Ta | 147nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ISL9N303AS3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-isl9n303as3st-datasheets-3240.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 215W Tc | 75A | 0.005Ohm | N-Channel | 7pF @ 15V | 3.2m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 172nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF15N70 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqaf15n70-datasheets-5287.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700V | 700V | 120W Tc | 9.5A | 38A | 0.56Ohm | 950 mJ | N-Channel | 3.6pF @ 25V | 560m Ω @ 4.8A, 10V | 5V @ 250μA | 9.5A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4088LS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4088ls-datasheets-5300.pdf | TO-220-3 Full Pack | TO-220FI(LS) | 650V | 2W Ta 37W Tc | N-Channel | 1000pF @ 30V | 850mOhm @ 5.5A, 10V | 7.5A Tc | 37.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD08N50C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-spd08n50c3atma1-datasheets-4460.pdf | 560V | 7.6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.41mm | 6.22mm | Lead Free | 8 Weeks | No SVHC | 3 | Tin | No | Single | 83W | 1 | PG-TO252-3-1 | 750pF | 6 ns | 5ns | 7 ns | 60 ns | 7.6A | 20V | 560V | 500V | 3V | 83W Tc | 600mOhm | 500V | N-Channel | 750pF @ 25V | 3 V | 600mOhm @ 4.6A, 10V | 3.9V @ 350μA | 7.6A Tc | 32nC @ 10V | 600 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPD031N06L3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-ipd031n06l3gatma1-datasheets-5274.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | no | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 167W | 1 | Not Qualified | R-PSSO-G2 | 25 ns | 78ns | 13 ns | 64 ns | 100A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 167W Tc | TO-252AA | 400A | N-Channel | 13000pF @ 30V | 3.1m Ω @ 100A, 10V | 2.2V @ 93μA | 100A Tc | 79nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPB049NE7N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb049ne7n3gatma1-datasheets-5329.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | No SVHC | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 150W | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 14 ns | 11ns | 8 ns | 30 ns | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 3.1V | 150W Tc | 0.0049Ohm | N-Channel | 4750pF @ 37.5V | 4.9m Ω @ 80A, 10V | 3.8V @ 91μA | 80A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF6678 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | /files/infineontechnologies-irf6678-datasheets-5360.pdf | 30V | 30A | DirectFET™ Isometric MX | Lead Free | 3 | 7 | EAR99 | BOTTOM | NO LEAD | 260 | 40 | 2.8W | 1 | Not Qualified | R-XBCC-N3 | 71ns | 8.1 ns | 27 ns | 24A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 89W Tc | 240A | 0.0022Ohm | 210 mJ | 30V | N-Channel | 5640pF @ 15V | 2.2m Ω @ 30A, 10V | 2.25V @ 250μA | 30A Ta 150A Tc | 65nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPC100N04S51R2ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipc100n04s51r2atma1-datasheets-5221.pdf | 8-PowerTDFN | 3 | 16 Weeks | yes | EAR99 | AEC-Q101 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 150W Tc | 100A | 400A | 0.0014Ohm | 480 mJ | N-Channel | 7650pF @ 25V | 1.2m Ω @ 50A, 10V | 3.4V @ 90μA | 100A Tc | 131nC @ 10V | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB020N04NGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb020n04ngatma1-datasheets-5378.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 13 Weeks | 7 | no | EAR99 | ULTRA-LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 167W | 1 | Not Qualified | R-PSSO-G6 | 27 ns | 6.4ns | 7.8 ns | 40 ns | 140A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 167W Tc | 980A | 0.002Ohm | 140 mJ | N-Channel | 9700pF @ 20V | 2m Ω @ 100A, 10V | 4V @ 95μA | 140A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF6715MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irf6715mtrpbf-datasheets-5289.pdf | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | 3 | 12 Weeks | 7 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 2.8W | 1 | FET General Purpose Power | R-XBCC-N3 | 20 ns | 31ns | 12 ns | 16 ns | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 78W Tc | 200 mJ | 25V | N-Channel | 5340pF @ 13V | 1.6m Ω @ 34A, 10V | 2.4V @ 100μA | 34A Ta 180A Tc | 59nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQAF19N60 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqaf19n60-datasheets-5216.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 120W Tc | 11.2A | 44.8A | 0.38Ohm | 1150 mJ | N-Channel | 3.6pF @ 25V | 380m Ω @ 5.6A, 10V | 5V @ 250μA | 11.2A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDS7088N3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds9933bz-datasheets-2298.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta | 21A | 60A | 0.004Ohm | N-Channel | 3.845pF @ 15V | 4m Ω @ 21A, 10V | 3V @ 250μA | 21A Ta | 48nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FQA34N25 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa34n25-datasheets-5258.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 245W Tc | 34A | 136A | 0.085Ohm | 700 mJ | N-Channel | 2.75pF @ 25V | 85m Ω @ 17A, 10V | 5V @ 250μA | 34A Tc | 80nC @ 10V | 10V | ±30V |
