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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | Ambient Temperature Range High | JESD-30 Code | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIA447DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia447djt1ge3-datasheets-1643.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | Unknown | 6 | EAR99 | No | DUAL | 1 | Single | 3.5W | 1 | S-PDSO-N3 | 30 ns | 60ns | 50 ns | 120 ns | 12A | 8V | SILICON | DRAIN | SWITCHING | 12V | -400mV | 19W Tc | 50A | -12V | P-Channel | 2880pF @ 6V | 13.5m Ω @ 7A, 4.5V | 850mV @ 250μA | 12A Tc | 80nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI5468DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5468dct1ge3-datasheets-1673.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 28MOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 30 | 2.3W | 1 | 5 ns | 10ns | 10 ns | 15 ns | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.3W Ta 5.7W Tc | 6A | N-Channel | 435pF @ 15V | 28m Ω @ 6.8A, 10V | 2.5V @ 250μA | 6A Tc | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| MCH3481-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-mch3481tlw-datasheets-1413.pdf | 3-SMD, Flat Lead | Lead Free | 3 | 6 Weeks | No SVHC | 70 | ACTIVE (Last Updated: 9 hours ago) | yes | e6 | Tin/Bismuth (Sn/Bi) | DUAL | 1 | R-PDSO-F3 | 6.6 ns | 27ns | 19 ns | 28 ns | 2A | 9V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 900mV | 800mW Ta | 2A | 0.104Ohm | N-Channel | 175pF @ 10V | 104m Ω @ 1A, 4.5V | 900mV @ 1mA | 2A Ta | 2.9nC @ 4.5V | 1.2V 4.5V | ±9V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RF4E110GNTR | ROHM Semiconductor | $0.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | 8-PowerUDFN | 6 | 20 Weeks | 8 | EAR99 | not_compliant | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | S-PDSO-N6 | 9 ns | 5.5ns | 3 ns | 21 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta | 44A | 30V | N-Channel | 504pF @ 15V | 11.3m Ω @ 11A, 10V | 2.5V @ 250μA | 11A Ta | 7.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPH3462-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-cph3462tlw-datasheets-1351.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 7 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | not_compliant | e6 | DUAL | GULL WING | 260 | 1 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-G3 | 4 ns | 2.8ns | 11 ns | 17 ns | 1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 1W Ta | 1A | 0.785Ohm | N-Channel | 155pF @ 20V | 785m Ω @ 1A, 10V | 2.6V @ 1mA | 1A Ta | 3.4nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| RAF040P01TCL | ROHM Semiconductor | $0.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-2sa1774ebtlr-datasheets-4143.pdf | 3-SMD, Flat Lead | Lead Free | 3 | 16 Weeks | 3 | EAR99 | not_compliant | DUAL | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | 15 ns | 43ns | 120 ns | 240 ns | 4A | -8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 800mW Ta | 4A | -12V | P-Channel | 4000pF @ 6V | 30m Ω @ 4A, 4.5V | 1V @ 1mA | 4A Ta | 37nC @ 4.5V | 1.5V 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J512NU,LF | Toshiba Semiconductor and Storage | $0.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 6-WDFN Exposed Pad | 12 Weeks | 10A | 12V | 1.25W Ta | P-Channel | 1400pF @ 6V | 16.2m Ω @ 4A, 8V | 1V @ 1mA | 10A Ta | 19.5nC @ 4.5V | 1.8V 8V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2130L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp2130l7-datasheets-1503.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | 3 | 16 Weeks | 7.994566mg | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1.4W | 1 | Other Transistors | 12 ns | 20ns | 20 ns | 38 ns | 3A | 12V | SILICON | SWITCHING | 20V | 1.4W Ta | 3A | 0.075Ohm | -20V | P-Channel | 443pF @ 16V | 75m Ω @ 3.5A, 4.5V | 1.25V @ 250μA | 3A Ta | 7.3nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| NTHD4P02FT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | -20V | -3A | 8-SMD, Flat Lead | Lead Free | 8 | 8 Weeks | 130MOhm | 8 | ACTIVE (Last Updated: 6 days ago) | yes | No | e3 | Tin (Sn) | YES | DUAL | C BEND | 260 | 8 | 40 | 1.1W | 1 | Other Transistors | 7 ns | 13ns | 13 ns | 33 ns | -2.2A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 1.1W Tj | 9A | -20V | P-Channel | 300pF @ 10V | 155m Ω @ 2.2A, 4.5V | 1.2V @ 250μA | 2.2A Tj | 6nC @ 4.5V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| NVTFS4824NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-nvtfs4824ntag-datasheets-1551.pdf | 8-PowerWDFN | 3.15mm | 750μm | 3.15mm | Lead Free | 5 | 23 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | 8 | Single | 3.2W | 1 | FET General Purpose Power | R-PDSO-F5 | 12 ns | 27ns | 6 ns | 20 ns | 46A | 20V | SILICON | DRAIN | 30V | 30V | 3.2W Ta 21W Tc | 402A | 0.0075Ohm | 72 mJ | N-Channel | 1740pF @ 12V | 4.7m Ω @ 23A, 10V | 2.5V @ 250μA | 18.2A Ta | 14nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| MCH6445-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-mch6445tlw-datasheets-1330.pdf | 6-SMD, Flat Leads | Lead Free | 7 Weeks | 6 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | 1 | FET General Purpose Power | 7.3 ns | 9.8ns | 24 ns | 40 ns | 4A | 20V | Single | 60V | 1.5W Ta | 4A | N-Channel | 505pF @ 20V | 78m Ω @ 2A, 10V | 4A Ta | 10nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RW1A025APT2CR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohm-rw1a025apt2cr-datasheets-3856.pdf | Lead Free | 6 | 10 Weeks | yes | EAR99 | e2 | Tin/Copper (Sn/Cu) | 400mW | DUAL | FLAT | 260 | 6 | 150°C | 10 | 1 | Other Transistors | Not Qualified | R-PDSO-F6 | 2nF | 2.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | P-CHANNEL | 12V | METAL-OXIDE SEMICONDUCTOR | 44mOhm | 62 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTGS5120PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntgs5120pt1g-datasheets-1345.pdf | SOT-23-6 | 3.1mm | 1mm | 1.7mm | Lead Free | 6 | 15 Weeks | No SVHC | 111MOhm | 6 | ACTIVE (Last Updated: 21 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 6 | Single | 40 | 1.4W | 1 | Other Transistors | 8.7 ns | 4.9ns | 4.9 ns | 38 ns | -2.5A | 20V | SILICON | SWITCHING | -3V | 600mW Ta | 60V | P-Channel | 942pF @ 30V | -3 V | 111m Ω @ 2.9A, 10V | 3V @ 250μA | 1.8A Ta | 18.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| PMZ950UPELYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmz950upelyl-datasheets-1335.pdf | SC-101, SOT-883 | 3 | 8 Weeks | IEC-60134 | BOTTOM | NO LEAD | 3 | 1 | R-PBCC-N3 | 500mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 360mW Ta 2.7W Tc | 0.5A | P-Channel | 43pF @ 10V | 1.4 Ω @ 500mA, 4.5V | 950mV @ 250μA | 500mA Ta | 2.1nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P16FE(TE85L,F) | Toshiba Semiconductor and Storage | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | SOT-563, SOT-666 | 6 | No | 2 | Dual | 150mW | 130 ns | 190 ns | 100mA | 10V | 20V | 150mW Ta | -20V | P-Channel | 11pF @ 3V | 8 Ω @ 10mA, 4V | 100mA Ta | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMS2120LFWB-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dms2120lfwb7-datasheets-1409.pdf&product=diodesincorporated-dms2120lfwb7-6836100 | 8-VDFN Exposed Pad | 3mm | 780μm | 2mm | Lead Free | 8 | 6 Weeks | 37.393021mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 8 | 1 | 40 | 1 | Other Transistors | 2.9A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 1.5W Ta | 0.095Ohm | -20V | P-Channel | 632pF @ 10V | 95m Ω @ 2.8A, 4.5V | 1.3V @ 250μA | 2.9A Ta | Schottky Diode (Isolated) | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| MCP87090T-U/LC | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/microchiptechnology-mcp87090tulc-datasheets-1364.pdf | 8-PowerTDFN | 3.3mm | 1mm | 3.3mm | Lead Free | 11 Weeks | No SVHC | 8 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | YES | 260 | MCP87090 | Single | 40 | 1.8W | FET General Purpose Powers | 2.5 ns | 9.3ns | 2.9 ns | 5.3 ns | 48A | 10V | 1.8W Ta | 50A | 25V | N-Channel | 580pF @ 12.5V | 1.35 V | 10.5m Ω @ 10V | 1.7V @ 250μA | 48A Tc | 10nC @ 4.5V | 4.5V 10V | +10V, -8V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV42ENER | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmv42ener-datasheets-1454.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | LOGIC LEVEL COMPATIBLE | IEC-60134 | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PDSO-G3 | 4.4A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 500mW Ta 5W Tc | TO-236AB | 0.036Ohm | N-Channel | 281pF @ 15V | 36m Ω @ 4.4A, 10V | 2V @ 250μA | 4.4A Ta | 9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMPB100ENEX | Nexperia USA Inc. | $0.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmpb100enex-datasheets-1407.pdf | 6-UDFN Exposed Pad | 8 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDY101PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-fdy101pz-datasheets-1239.pdf | SC-89, SOT-490 | 1.7mm | 780μm | 980μm | 3 | 8 Weeks | 30mg | No SVHC | 3 | ACTIVE (Last Updated: 21 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 625mW | 1 | Other Transistors | 6 ns | 13ns | 13 ns | 8 ns | 150mA | 8V | SILICON | 20V | -1V | 625mW Ta | 8Ohm | -20V | P-Channel | 100pF @ 10V | 8 Ω @ 150mA, 4.5V | 1.5V @ 250μA | 150mA Ta | 1.4nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| SSM6K514NU,LF | Toshiba Semiconductor and Storage | $1.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 6-WDFN Exposed Pad | 12 Weeks | unknown | 40V | 2.5W Ta | N-Channel | 1110pF @ 20V | 11.6m Ω @ 4A, 10V | 2.4V @ 100μA | 12A Ta | 7.5nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3025LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn3025lfg7-datasheets-1249.pdf | 8-PowerVDFN | 5 | 17 Weeks | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | 260 | 40 | 1 | S-PDSO-N5 | 3.8 ns | 4.1ns | 4.7 ns | 17.9 ns | 7.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2W Ta | 60A | N-Channel | 605pF @ 15V | 18m Ω @ 7.8A, 10V | 2V @ 250μA | 7.5A Ta | 11.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| DMT3006LDK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmt3006ldk7-datasheets-1256.pdf | 8-PowerWDFN | 23 Weeks | 8 | yes | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 46.2A | 30V | 1.1W Ta | N-Channel | 1320pF @ 15V | 6.5m Ω @ 12A, 10V | 3V @ 250μA | 17.1A Ta 46.2A Tc | 22.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA469DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sia469djt1ge3-datasheets-1253.pdf | PowerPAK® SC-70-6 | 850μm | 14 Weeks | EAR99 | C-07431-SINGLE | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.3W | 150°C | 7 ns | 30 ns | -8.8A | 20V | 30V | 15.6W Tc | -30V | P-Channel | 1020pF @ 15V | 26.5m Ω @ 5A, 10V | 3V @ 250μA | 12A Tc | 15nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3030LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn3030lss13-datasheets-1160.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | 8 | 7 Weeks | 850.995985mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | 40 | 1 | FET General Purpose Powers | 3.2 ns | 4.5ns | 14 ns | 18 ns | 9A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta | 9A | 40A | 30V | N-Channel | 741pF @ 15V | 18m Ω @ 9A, 10V | 2.1V @ 250μA | 9A Ta | 25nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| QS5U34TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | SOT-23-5 | Lead Free | 5 | 20 Weeks | 310MOhm | 6 | yes | EAR99 | No | e1 | TIN SILVER COPPER | 900mW | DUAL | GULL WING | 260 | 5 | Single | 10 | 700mW | 1 | FET General Purpose Power | R-PDSO-G5 | 110pF | 5 ns | 5ns | 3 ns | 20 ns | 1.5A | 10V | SWITCHING | N-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 130mOhm | 20V | 180 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMXB65ENEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmxb65enez-datasheets-1043.pdf | 3-XDFN Exposed Pad | 400μm | 2 | 4 Weeks | 3 | No | YES | DUAL | 3 | 1 | 400mW | 1 | 150°C | 150°C | R-PDSO-N2 | 3 ns | 12ns | 3 ns | 11 ns | 3.2A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400mW Ta 8.33W Tc | 0.067Ohm | 30V | N-Channel | 295pF @ 15V | 67m Ω @ 3.2A, 10V | 2.5V @ 250μA | 3.2A Ta | 11nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2045UQ-7 | Diodes Incorporated | $0.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp2045uq7-datasheets-1107.pdf | TO-236-3, SC-59, SOT-23-3 | 15 Weeks | 20V | 800mW Ta | P-Channel | 634pF @ 10V | 45m Ω @ 4A, 4.5V | 1V @ 250μA | 4.3A Ta | 6.8nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8489EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si8489edbt2e1-datasheets-1092.pdf | 4-UFBGA | 4 | 33 Weeks | 4 | EAR99 | Tin | No | BOTTOM | BALL | 1 | Single | 1.8W | 1 | 27 ns | 20ns | 25 ns | 50 ns | 5.4A | 12V | SILICON | SWITCHING | 20V | 780mW Ta 1.8W Tc | -20V | P-Channel | 765pF @ 10V | 44m Ω @ 1.5A, 10V | 1.2V @ 250μA | 27nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J213FE(TE85L,F | Toshiba Semiconductor and Storage | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | SOT-563, SOT-666 | 290pF | 12 Weeks | 6 | EAR99 | unknown | Single | 500mW | Other Transistors | 2.6A | 8V | 20V | 500mW Ta | -20V | P-Channel | 290pF @ 10V | 103m Ω @ 1.5A, 4.5V | 1V @ 1mA | 2.6A Ta | 4.7nC @ 4.5V | 1.5V 4.5V | ±8V |
