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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| UPA2701GR-E1-AT | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-upa675tt1a-datasheets-2658.pdf | 8-SOIC (0.173, 4.40mm Width) | 8-PSOP | 30V | N-Channel | 1.2pF @ 10V | 7.5mOhm @ 7A, 10V | 2.5V @ 1mA | 14A Ta | 12nC @ 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA17N40 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa17n40-datasheets-3238.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 400V | 400V | 190W Tc | 17.2A | 68.8A | 0.27Ohm | 1000 mJ | N-Channel | 2.3pF @ 25V | 270m Ω @ 8.6A, 10V | 5V @ 250μA | 17.2A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| RQ5H025TNTL | ROHM Semiconductor | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | SC-96 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 45V | 700mW Ta | N-Channel | 250pF @ 10V | 130m Ω @ 2.5A, 4.5V | 1.5V @ 1mA | 2.5A Ta | 3.2nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD80R750P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd80r750p7atma1-datasheets-2977.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 51W Tc | TO-252AA | 17A | 0.75Ohm | 16 mJ | N-Channel | 460pF @ 500V | 750m Ω @ 2.7A, 10V | 3.5V @ 140μA | 7A Tc | 17nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDS4080N7 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds4080n7-datasheets-3027.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3.9W Ta | 13A | 60A | 0.01Ohm | 200 mJ | N-Channel | 1.75pF @ 20V | 10m Ω @ 13A, 10V | 5V @ 250μA | 13A Ta | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDS6672A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds6672a-datasheets-2885.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 12.5A | 50A | 0.008Ohm | N-Channel | 5.07pF @ 15V | 8m Ω @ 14A, 10V | 2V @ 250μA | 12.5A Ta | 46nC @ 4.5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSC019N04NSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bsc019n04nsgatma1-datasheets-2901.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 125W | 1 | Not Qualified | R-PDSO-F5 | 5.6ns | 29A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 125W Tc | 400A | 295 mJ | N-Channel | 8800pF @ 20V | 1.9m Ω @ 50A, 10V | 4V @ 85μA | 30A Ta 100A Tc | 108nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SQA470EEJ-T1_GE3 | Vishay Siliconix | $0.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqa470eejt1ge3-datasheets-2605.pdf | PowerPAK® SC-70-6 | 12 Weeks | PowerPAK® SC-70-6 Single | 30V | 13.6W Tc | N-Channel | 453pF @ 20V | 56mOhm @ 2A, 4.5V | 1.6V @ 250μA | 2.25A Tc | 5.2nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BFL4007-1E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bfl40071e-datasheets-2912.pdf | TO-220-3 Full Pack | TO-220F-3FS | 600V | 2W Ta 40W Tc | N-Channel | 1200pF @ 30V | 680mOhm @ 7A, 10V | 8.7A Tc | 46nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3915TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irlr3915trpbf-datasheets-2872.pdf | 55V | 61A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | Lead Free | 2 | 12 Weeks | No SVHC | 14mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 120W | 1 | FET General Purpose Power | R-PSSO-G2 | 7.4 ns | 51ns | 100 ns | 26 ns | 30A | 16V | 55V | SILICON | DRAIN | SWITCHING | 3V | 120W Tc | TO-252AA | 240A | 200 mJ | 55V | N-Channel | 1870pF @ 25V | 3 V | 14m Ω @ 30A, 10V | 3V @ 250μA | 30A Tc | 92nC @ 10V | 5V 10V | ±16V | ||||||||||||||||||||||||||
| IRFH5406TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irfh5406trpbf-datasheets-2944.pdf | 8-PowerVDFN | 5.9944mm | 900μm | 5mm | Lead Free | 5 | 12 Weeks | No SVHC | 14.4MOhm | 8 | EAR99 | No | IRFH5406TRPBF | e3 | Matte Tin (Sn) | DUAL | 260 | 1 | 30 | 3.6W | 1 | FET General Purpose Power | 150°C | R-PDSO-N5 | 12 ns | 8.7ns | 3.5 ns | 5.4 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 3.6W Ta 46W Tc | 45 mJ | 60V | N-Channel | 1256pF @ 25V | 2 V | 14.4m Ω @ 24A, 10V | 4V @ 50μA | 11A Ta 40A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IPW60R299CPFKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipw60r299cpfksa1-datasheets-2960.pdf | TO-247-3 | PG-TO247-3 | 600V | 96W Tc | N-Channel | 1.1pF @ 100V | 299mOhm @ 6.6A, 10V | 3.5V @ 440μA | 11A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS3682 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds3682-datasheets-2962.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 2.5W Ta | 6A | 0.035Ohm | 156 mJ | N-Channel | 1.3pF @ 25V | 35m Ω @ 6A, 10V | 4V @ 250μA | 6A Ta | 25nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI4420DYTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-si4420dytrpbf-datasheets-2964.pdf | 30V | 12.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 9mOhm | 8 | EAR99 | No | DUAL | GULL WING | Single | 2.5W | 1 | 15 ns | 10ns | 47 ns | 55 ns | 12.5A | 20V | SILICON | SWITCHING | 1V | 2.5W Ta | 50A | 400 mJ | 30V | N-Channel | 2240pF @ 15V | 1 V | 9m Ω @ 12.5A, 10V | 1V @ 250μA | 12.5A Ta | 78nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FDS4080N3 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fds4080n3-datasheets-2973.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3W Ta | 13A | 60A | 0.0105Ohm | 200 mJ | N-Channel | 1.75pF @ 20V | 10.5m Ω @ 13A, 10V | 5V @ 250μA | 13A Ta | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| HUF75339P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75339p3-datasheets-2975.pdf | TO-220-3 | 3 | no | unknown | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 200W Tc | TO-220AB | 70A | 0.012Ohm | N-Channel | 2pF @ 25V | 12m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 130nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDS7060N7 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds8947a-datasheets-2944.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta | 19A | 60A | 0.005Ohm | 360 mJ | N-Channel | 3.274pF @ 15V | 5m Ω @ 19A, 10V | 3V @ 250μA | 19A Ta | 56nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| NTP5404NRG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntp5404nrg-datasheets-2992.pdf | TO-220-3 | TO-220AB | 40V | 5.4W Ta 254W Tc | N-Channel | 7pF @ 32V | 4.5mOhm @ 40A, 10V | 3.5V @ 250μA | 24A Ta 167A Tc | 125nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC026N04LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsc026n04lsatma1-datasheets-2764.pdf | 8-PowerTDFN | 26 Weeks | 8 | Tin | PG-TDSON-8-6 | 2.3nF | 4ns | 100A | 20V | 40V | 2.5W Ta 63W Tc | 2.1mOhm | N-Channel | 2300pF @ 20V | 2.6mOhm @ 50A, 10V | 2V @ 250μA | 23A Ta 100A Tc | 32nC @ 10V | 2.6 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATP401-TL-H | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-atp401tlh-datasheets-2724.pdf | ATPAK (2 leads+tab) | ATPAK | 60V | 90W Tc | N-Channel | 17pF @ 20V | 3.7mOhm @ 50A, 10V | 100A Ta | 300nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC018NE2LSIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc018ne2lsiatma1-datasheets-2777.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | Not Qualified | R-PDSO-F5 | 4.8ns | 29A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 69W Tc | 400A | 0.0024Ohm | 45 mJ | N-Channel | 2500pF @ 12V | 1.8m Ω @ 30A, 10V | 2V @ 250μA | 29A Ta 100A Tc | 36nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NTMFS4962NFT1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntmfd4c85nt1g-datasheets-2998.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3993-ZK-E1-AZ | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk3993zke1az-datasheets-2883.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (MP-3Z) | 25V | N-Channel | 4.77pF @ 10V | 3.8mOhm @ 32A, 10V | 3V @ 1mA | 64A Tc | 88nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BFL4004-1E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bfl40041e-datasheets-2734.pdf | TO-220-3 Full Pack | TO-220F-3FS | 800V | 2W Ta 36W Tc | N-Channel | 710pF @ 30V | 2.5Ohm @ 3.25A, 10V | 4.3A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP4N90 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp4n90-datasheets-2735.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 140W Tc | TO-220AB | 4.2A | 16.8A | 3.1Ohm | 570 mJ | N-Channel | 1.1pF @ 25V | 3.3 Ω @ 2.1A, 10V | 5V @ 250μA | 4.2A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| NVB60N06T4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nvb60n06t4g-datasheets-2748.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 60V | 2.4W Ta 150W Tj | N-Channel | 3.22pF @ 25V | 14mOhm @ 30A, 10V | 4V @ 250μA | 60A Ta | 81nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3607TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfb3607pbf-datasheets-9648.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 16 ns | 110ns | 96 ns | 43 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 140W Tc | 0.009Ohm | 75V | N-Channel | 3070pF @ 50V | 9m Ω @ 46A, 10V | 4V @ 100μA | 80A Tc | 84nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FQAF7N90 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqaf7n90-datasheets-2786.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 107W Tc | 5.2A | 20.8A | 830 mJ | N-Channel | 2.28pF @ 25V | 1.55 Ω @ 2.6A, 10V | 5V @ 250μA | 5.2A Tc | 59nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPI65R150CFDXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi65r150cfdxksa1-datasheets-2794.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3-1 | 650V | 195.3W Tc | N-Channel | 2.34pF @ 100V | 150mOhm @ 9.3A, 10V | 4.5V @ 900μA | 22.4A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW12N50C3FKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spw12n50c3fksa1-datasheets-2796.pdf | TO-247-3 | PG-TO247-3 | 560V | 125W Tc | N-Channel | 1.2pF @ 25V | 380mOhm @ 7A, 10V | 3.9V @ 500μA | 11.6A Tc | 49nC @ 10V | 10V | ±20V |
