Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BFL4004-1E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bfl40041e-datasheets-2734.pdf | TO-220-3 Full Pack | TO-220F-3FS | 800V | 2W Ta 36W Tc | N-Channel | 710pF @ 30V | 2.5Ohm @ 3.25A, 10V | 4.3A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP4N90 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp4n90-datasheets-2735.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 140W Tc | TO-220AB | 4.2A | 16.8A | 3.1Ohm | 570 mJ | N-Channel | 1.1pF @ 25V | 3.3 Ω @ 2.1A, 10V | 5V @ 250μA | 4.2A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVB60N06T4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nvb60n06t4g-datasheets-2748.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 60V | 2.4W Ta 150W Tj | N-Channel | 3.22pF @ 25V | 14mOhm @ 30A, 10V | 4V @ 250μA | 60A Ta | 81nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3607TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfb3607pbf-datasheets-9648.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 16 ns | 110ns | 96 ns | 43 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 140W Tc | 0.009Ohm | 75V | N-Channel | 3070pF @ 50V | 9m Ω @ 46A, 10V | 4V @ 100μA | 80A Tc | 84nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FQAF7N90 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqaf7n90-datasheets-2786.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 107W Tc | 5.2A | 20.8A | 830 mJ | N-Channel | 2.28pF @ 25V | 1.55 Ω @ 2.6A, 10V | 5V @ 250μA | 5.2A Tc | 59nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI65R150CFDXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi65r150cfdxksa1-datasheets-2794.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3-1 | 650V | 195.3W Tc | N-Channel | 2.34pF @ 100V | 150mOhm @ 9.3A, 10V | 4.5V @ 900μA | 22.4A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQA405EJ-T1_GE3 | Vishay Siliconix | $0.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqa405ejt1ge3-datasheets-2535.pdf | PowerPAK® SC-70-6 | 12 Weeks | PowerPAK® SC-70-6 Single | 40V | 13.6W Tc | P-Channel | 1815pF @ 25V | 35mOhm @ 5A, 10V | 2.5V @ 250μA | 10A Tc | 33nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3042LFDF-7 | Diodes Incorporated | $1.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn3042lfdf7-datasheets-2264.pdf | 6-UDFN Exposed Pad | 22 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 30V | 2.1W Ta | N-Channel | 570pF @ 15V | 28m Ω @ 4A, 10V | 1.4V @ 250μA | 7A Ta | 13.3nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4926NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntmfs4926nt1g-datasheets-2017.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 16 Weeks | No SVHC | 5 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | FLAT | 5 | Single | 2.7W | 1 | FET General Purpose Power | 8.6 ns | 36.9ns | 5.5 ns | 14.7 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 1.6V | 920mW Ta 21.6W Tc | 9A | 0.012Ohm | 30V | N-Channel | 1004pF @ 15V | 1.6 V | 7m Ω @ 30A, 10V | 2.2V @ 250μA | 9A Ta 44A Tc | 17.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDP2670 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdp2670-datasheets-2681.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 93W Tc | TO-220AB | 19A | 40A | 0.13Ohm | 375 mJ | N-Channel | 1.32pF @ 100V | 130m Ω @ 10A, 10V | 4.5V @ 250μA | 19A Ta | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3814-AZ | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk3814az-datasheets-2683.pdf | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (MP-3) | 60V | 1W Ta 84W Tc | N-Channel | 5450pF @ 10V | 8.7mOhm @ 30A, 10V | 60A Tc | 95nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7446TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfh7446trpbf-datasheets-2685.pdf | 8-TQFN Exposed Pad | 5.85mm | 1.17mm | 5mm | Lead Free | 5 | 12 Weeks | No SVHC | 3.3MOhm | 5 | EAR99 | No | DUAL | FLAT | Single | 78W | 1 | FET General Purpose Power | 11 ns | 37ns | 26 ns | 33 ns | 85A | 20V | SILICON | DRAIN | SWITCHING | 2.2V | 78W Tc | 468A | 40V | N-Channel | 3174pF @ 25V | 3.3m Ω @ 50A, 10V | 3.9V @ 100μA | 85A Tc | 98nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| DMP1005UFDF-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/diodesincorporated-dmp1005ufdf7-datasheets-2668.pdf | 6-UDFN Exposed Pad | 6 | 18 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | DUAL | NO LEAD | 260 | 30 | 1 | S-PDSO-N6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 12V | 12V | 2.1W Ta | 12.8A | 0.0085Ohm | P-Channel | 2475pF @ 6V | 8.5m Ω @ 5A, 4.5V | 1V @ 250μA | 26A Tc | 47nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA12N60 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa12n60-datasheets-2722.pdf | TO-3P-3, SC-65-3 | 3 | yes | AVALANCHE RATED | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 240W Tc | 12A | 48A | 0.7Ohm | 790 mJ | N-Channel | 1.9pF @ 25V | 700m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 54nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4927NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-ntmfs4927nt1g-datasheets-2546.pdf | 8-PowerTDFN, 5 Leads | 5.1mm | 1.1mm | 6.1mm | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | FLAT | 5 | Single | 20.8W | 1 | FET General Purpose Power | 9.2 ns | 25.5ns | 4.4 ns | 14 ns | 38A | 20V | SILICON | DRAIN | SWITCHING | 920mW Ta 20.8W Tc | 7.9A | 30V | N-Channel | 913pF @ 15V | 7.3m Ω @ 30A, 10V | 2.2V @ 250μA | 7.9A Ta 38A Tc | 16nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AONR36366 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerVDFN | 18 Weeks | 30V | 5W Ta 28W Tc | N-Channel | 1835pF @ 15V | 3.5m Ω @ 20A, 10V | 2.1V @ 250μA | 30A Ta 34A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7832TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~155°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7832trpbf-datasheets-2578.pdf | 30V | 20A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 4MOhm | 8 | EAR99 | Tin | No | DUAL | GULL WING | 1 | Single | 2.5W | 1 | 155°C | 12 ns | 6.7ns | 13 ns | 21 ns | 20A | 20V | 30V | SILICON | SWITCHING | 6.3 mm | 2.32V | 2.5W Ta | 62 ns | 260 mJ | 30V | N-Channel | 4310pF @ 15V | 2.32 V | 4m Ω @ 20A, 10V | 2.32V @ 250μA | 20A Ta | 51nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| CSD25485F5 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-SMD, No Lead | 1.49mm | 730μm | Lead Free | 3 | 8 Weeks | 3 | ACTIVE (Last Updated: 5 days ago) | yes | 338μm | EAR99 | BOTTOM | 260 | CSD25485 | Single | NOT SPECIFIED | 1 | 3.2A | SILICON | SWITCHING | 20V | 20V | 500mW Ta | 0.07Ohm | P-Channel | 533pF @ 10V | 35m Ω @ 900mA, 8V | 1.3V @ 250μA | 3.2A Ta | 3.5nC @ 4.5V | 1.8V 8V | -12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDBA170N06AT4H | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ndba170n06at4h-datasheets-2599.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263) | 60V | 90W Tc | N-Channel | 15.8pF @ 20V | 3.3mOhm @ 50A, 10V | 2.6V @ 1mA | 170A Ta | 280nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMPB20XPE,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-pmpb20xpe115-datasheets-2587.pdf | 6-UDFN Exposed Pad | 6 | 8 Weeks | 6 | Tin | e3 | YES | DUAL | NO LEAD | NOT SPECIFIED | 6 | 1 | Single | NOT SPECIFIED | 1 | 13 ns | 60ns | 50 ns | 92 ns | 7.2A | -680mV | -20V | SILICON | DRAIN | SWITCHING | 20V | 1.7W Ta 12.5W Tc | 30A | 0.0235Ohm | -20V | P-Channel | 294pF @ 10V | 23.5m Ω @ 7.2A, 4.5V | 900mV @ 250μA | 7.2A Ta | 45nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7M42-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk7m4260ex-datasheets-2323.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PSSO-G4 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 36W Tc | 78A | 0.042Ohm | 7.7 mJ | N-Channel | 508pF @ 25V | 42m Ω @ 5A, 10V | 4V @ 1mA | 20A Tc | 9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP5426NG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntp5426ng-datasheets-2632.pdf | TO-220-3 | TO-220AB | 60V | 215W Tc | N-Channel | 5.8pF @ 25V | 6mOhm @ 60A, 10V | 4V @ 250μA | 120A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS439DNT-T1-GE3 | Vishay Siliconix | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis439dntt1ge3-datasheets-2256.pdf | PowerPAK® 1212-8S | 5 | Unknown | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | S-PDSO-C5 | 38 ns | 33ns | 12 ns | 27 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 30V | 3.8W Ta 52.1W Tc | 90A | -30V | P-Channel | 2135pF @ 15V | 11m Ω @ 14A, 10V | 2.8V @ 250μA | 50A Tc | 68nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP22D4UFA-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmp22d4ufa7b-datasheets-2432.pdf | 3-XFDFN | 650μm | 350μm | 850μm | Lead Free | 3 | 15 Weeks | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | 260 | 1 | Single | 40 | 1 | Other Transistors | 5.8 ns | 5.7ns | 16.4 ns | 31.1 ns | 330mA | 8V | SILICON | DRAIN | SWITCHING | 400mW Ta | 0.25A | 20V | P-Channel | 28.7pF @ 15V | 1.9 Ω @ 100mA, 4.5V | 1V @ 250μA | 330mA Ta | 0.4nC @ 4.5V | 1.2V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| PSMN130-200D,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn130200d118-datasheets-2477.pdf&product=nexperiausainc-psmn130200d118-6836328 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.35mm | 2.38mm | 6.22mm | Lead Free | 2 | 12 Weeks | 453.59237mg | No SVHC | 130MOhm | 3 | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 150W | 1 | R-PSSO-G2 | 15 ns | 46ns | 38 ns | 50 ns | 20A | 20V | 200V | SILICON | DRAIN | SWITCHING | 3V | 150W Tc | 80A | 252 mJ | 200V | N-Channel | 2470pF @ 25V | 130m Ω @ 25A, 10V | 4V @ 1mA | 20A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| ZVN3320A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | 200V | 100mA | SOT-23 | Lead Free | 3 | yes | EAR99 | 8541.29.00.95 | e3 | Matte Tin (Sn) | 625mW | SINGLE | WIRE | 260 | 3 | 200°C | 40 | 330mW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-W3 | 45pF | 100mA | 20V | SILICON | SINGLE | SWITCHING | N-CHANNEL | 200V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 25Ohm | 200V | 25 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTM761110LBF | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-mtm761110lbf-datasheets-2500.pdf | 6-SMD, Flat Leads | 2mm | 600μm | 1.7mm | 6 | 10 Weeks | No SVHC | 6 | EAR99 | unknown | DUAL | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Other Transistors | 9 ns | 270 ns | -4A | 8V | SILICON | SWITCHING | 12V | -650mV | 700mW Ta | 4A | 0.034Ohm | -12V | P-Channel | 1400pF @ 10V | 650 mV | 34m Ω @ 1A, 4.5V | 1V @ 1mA | 4A Ta | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AON2260 | Alpha & Omega Semiconductor Inc. | $1.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 6-UDFN Exposed Pad | 6 | 18 Weeks | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N6 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.8W Ta | 6A | 30A | 0.044Ohm | N-Channel | 426pF @ 30V | 44m Ω @ 6A, 10V | 2.5V @ 250μA | 6A Ta | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS8884 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fds8884-datasheets-2517.pdf | 30V | 8.5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | FAST SWITCHING | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 5 ns | 9ns | 21 ns | 42 ns | 8.5A | 20V | SILICON | SWITCHING | 1.7V | 2.5W Ta | 40A | 0.023Ohm | 32 mJ | 30V | N-Channel | 635pF @ 15V | 23m Ω @ 8.5A, 10V | 2.5V @ 250μA | 8.5A Ta | 13nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BUK7M21-40EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk7m2140ex-datasheets-2464.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PSSO-G4 | 33A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 44W Tc | 131A | 0.021Ohm | 11.6 mJ | N-Channel | 593pF @ 25V | 21m Ω @ 10A, 10V | 4V @ 1mA | 33A Tc | 10.7nC @ 10V | 10V | ±20V |
