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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| CMS16P06H8-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/comchiptechnology-cms16p06h8hf-datasheets-9350.pdf | 8-PowerTDFN | 8 Weeks | 60V | 2W Ta 25W Tc | P-Channel | 1256pF @ 30V | 48m Ω @ 8A, 10V | 2.5V @ 250μA | 5A Ta 16A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM250N02CX RFG | Taiwan Semiconductor Corporation | $2.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | 25 Weeks | 20V | 1.56W Tc | N-Channel | 535pF @ 10V | 25m Ω @ 4A, 4.5V | 800mV @ 250μA | 5.8A Tc | 7.7nC @ 4.5V | 1.8V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2319DDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2319ddst1ge3-datasheets-2020.pdf | TO-236-3, SC-59, SOT-23-3 | 14 Weeks | SOT-23-3 (TO-236) | 40V | 1W Ta 1.7W Tc | P-Channel | 650pF @ 20V | 75mOhm @ 2.7A, 10V | 2.5V @ 250μA | 2.7A Ta 3.6A Tc | 19nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7880-55/CUF | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk788055cuf-datasheets-1713.pdf | TO-261-4, TO-261AA | 4 | 12 Weeks | 4 | Tin | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | 9 ns | 15ns | 12 ns | 18 ns | 3.5A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 8.3W Tc | 7.5A | 0.08Ohm | 30 mJ | N-Channel | 500pF @ 25V | 80m Ω @ 5A, 10V | 4V @ 1mA | 3.5A Ta | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| CSD13303W1015 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 0.85 | ROHS3 Compliant | 6-UFBGA, DSBGA | 1.5mm | 1mm | 1.8mm | Lead Free | 12 Weeks | 6 | ACTIVE (Last Updated: 5 days ago) | yes | 2mm | EAR99 | 8541.29.00.95 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | CSD13303 | Single | FET General Purpose Power | 4.6 ns | 10ns | 3.2 ns | 14.7 ns | 3.5A | 8V | 1.65W Ta | 31A | 12V | N-Channel | 715pF @ 6V | 20m Ω @ 1.5A, 4.5V | 1.2V @ 250μA | 31A Ta | 4.7nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| SSM6J501NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | 6-WDFN Exposed Pad | 12 Weeks | EAR99 | unknown | 1W | 10A | 8V | 20V | 1W Ta | -20V | P-Channel | 2600pF @ 10V | 15.3m Ω @ 4A, 4.5V | 1V @ 1mA | 10A Ta | 29.9nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RTE002P02TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/rohmsemiconductor-rte002p02tl-datasheets-1704.pdf | -20V | -200mA | SC-75, SOT-416 | Lead Free | 3 | 7 Weeks | No SVHC | 3 | yes | EAR99 | No | TIN/TIN COPPER | DUAL | GULL WING | 260 | 3 | Single | 10 | 150mW | 1 | Other Transistors | 9 ns | 6ns | 6 ns | 35 ns | 200mA | 12V | 20V | SILICON | SWITCHING | 150mW Ta | 0.2A | 1.6Ohm | -20V | P-Channel | 50pF @ 10V | 2 V | 1.5 Ω @ 200mA, 4.5V | 2V @ 1mA | 200mA Ta | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| MCQ4435-TP | Micro Commercial Co | $0.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/microcommercialco-mcq4435tp-datasheets-1861.pdf | 8-SOIC (0.154, 3.90mm Width) | 22 Weeks | 30V | 1.4W Tj | P-Channel | 1350pF @ 15V | 24m Ω @ 9.1A, 10V | 3V @ 250μA | 9.1A Tj | 50nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J414TU,LF | Toshiba Semiconductor and Storage | $0.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 6 | unknown | Single | 1W | 1 | 6A | 8V | 20V | 1W Ta | -20V | P-Channel | 1650pF @ 10V | 22.5m Ω @ 6A, 4.5V | 1V @ 1mA | 6A Ta | 23.1nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BS170-D26Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-bs170d27z-datasheets-8952.pdf&product=onsemiconductor-bs170d26z-6836216 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | 11 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | NO | BOTTOM | NOT SPECIFIED | BS170 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-PBCY-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 830mW Ta | 0.5A | 5Ohm | 10 pF | N-Channel | 40pF @ 10V | 5 Ω @ 200mA, 10V | 3V @ 1mA | 500mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6K403TU,LF | Toshiba Semiconductor and Storage | $0.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 6-SMD, Flat Leads | 12 Weeks | 6 | 500mW | 1 | 4.2A | 10V | 20V | 500mW Ta | N-Channel | 1050pF @ 10V | 28m Ω @ 3A, 4V | 1V @ 1mA | 4.2A Ta | 16.8nC @ 4V | 1.5V 4V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VN2110K1-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/microchiptechnology-vn2110k1g-datasheets-1772.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 14 Weeks | 1.437803g | 3 | EAR99 | HIGH INPUT IMPEDANCE | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 40 | 360mW | 1 | 3 ns | 5ns | 5 ns | 6 ns | 200mA | 20V | SILICON | SWITCHING | 360mW Tc | 0.2A | 4Ohm | 5 pF | 100V | N-Channel | 50pF @ 25V | 4 Ω @ 500mA, 10V | 2.4V @ 1mA | 200mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTLJF4156NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntljf4156ntag-datasheets-1725.pdf | 6-WDFN Exposed Pad | Lead Free | 6 | 4 Weeks | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | e3 | YES | DUAL | C BEND | NOT SPECIFIED | 6 | Single | NOT SPECIFIED | 1.5W | 1 | Not Qualified | 4.8 ns | 9.2ns | 9.2 ns | 14.2 ns | 3.7A | 8V | SILICON | DRAIN | SWITCHING | 710mW Ta | 2.5A | 20A | 0.09Ohm | 30V | N-Channel | 427pF @ 15V | 70m Ω @ 2A, 4.5V | 1V @ 250μA | 2.5A Tj | 6.5nC @ 4.5V | Schottky Diode (Isolated) | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SIB456DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sib456dkt1ge3-datasheets-1763.pdf | PowerPAK® SC-75-6L | 1.7mm | 800μm | 1.7mm | Lead Free | 14 Weeks | 95.991485mg | Unknown | 185MOhm | 6 | EAR99 | No | 1 | Single | 2.4W | FET General Purpose Powers | 15 ns | 45ns | 13 ns | 11 ns | 6.3A | 20V | 1.6V | 2.4W Ta 13W Tc | 100V | N-Channel | 130pF @ 50V | 185m Ω @ 1.9A, 10V | 3V @ 250μA | 6.3A Tc | 5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| PMN40ENEX | Nexperia USA Inc. | $0.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmn40enex-datasheets-1686.pdf | SC-74, SOT-457 | 6 | 4 Weeks | LOGIC LEVEL COMPATIBLE | IEC-60134 | YES | DUAL | GULL WING | 6 | 1 | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 530mW Ta 4.46W Tc | 4.5A | 0.038Ohm | N-Channel | 294pF @ 15V | 38m Ω @ 4.5A, 10V | 2V @ 250μA | 5.7A Ta | 11nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2302CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2302cdst1e3-datasheets-4810.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 57mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 710mW | 1 | FET General Purpose Powers | 150°C | 8 ns | 7ns | 7 ns | 30 ns | 2.9A | 8V | SILICON | SWITCHING | 850mV | 710mW Ta | 2.6A | 20V | N-Channel | 57m Ω @ 3.6A, 4.5V | 850mV @ 250μA | 2.6A Ta | 5.5nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| AO6409 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/alphaomegasemiconductor-ao6409-datasheets-3939.pdf&product=alphaomegasemiconductorinc-ao6409-6836194 | SC-74, SOT-457 | 6 | 16 Weeks | 6 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 6 | 2W | 1 | Other Transistors | 5.5A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.1W Ta | 5A | 0.045Ohm | P-Channel | 1450pF @ 10V | 45m Ω @ 5A, 4.5V | 1V @ 250μA | 5.5A Ta | 17.2nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| DMN2028UFDF-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn2028ufdf7-datasheets-1828.pdf | 6-UDFN Exposed Pad | 14 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 7.9A | 20V | 660mW Ta | N-Channel | 907pF @ 10V | 25m Ω @ 4A, 4.5V | 1V @ 250μA | 7.9A Ta | 18nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC30N20DZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdc30n20dz-datasheets-1804.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 10 Weeks | 36mg | ACTIVE (Last Updated: 1 day ago) | yes | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Dual | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SWITCHING | 30V | 30V | 960mW Ta | MO-193AA | 4.6A | 0.031Ohm | 30 pF | N-Channel | 535pF @ 15V | 31m Ω @ 4.6A, 10V | 3V @ 250μA | 4.6A Ta | 7.9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| RSE002P03TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | -30V | -200mA | SC-75, SOT-416 | 1.6mm | 700μm | 800μm | Lead Free | 3 | 7 Weeks | No SVHC | 1.4Ohm | 3 | yes | EAR99 | No | e1 | TIN SILVER COPPER | DUAL | GULL WING | 260 | 3 | Single | 10 | 150mW | 1 | Other Transistors | 8 ns | 5ns | 5 ns | 30 ns | 200mA | 20V | 30V | SILICON | SWITCHING | 150mW Ta | 0.2A | -30V | P-Channel | 30pF @ 10V | 2.5 V | 1.4 Ω @ 200mA, 10V | 2.5V @ 1mA | 200mA Ta | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||
| RQ5E020SPTL | ROHM Semiconductor | $0.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-96 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 700mW Ta | P-Channel | 370pF @ 10V | 120m Ω @ 2A, 10V | 2.5V @ 1mA | 2A Ta | 4.3nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMPB29XPEAX | Nexperia USA Inc. | $0.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmpb29xpeax-datasheets-1711.pdf | 6-UDFN Exposed Pad | 8 Weeks | 20V | 1.7W Ta 12.5W Tc | P-Channel | 2970pF @ 10V | 32.5m Ω @ 5A, 4.5V | 1V @ 250μA | 5A Ta | 45nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C08NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs4c08nt1g-datasheets-1316.pdf | 8-PowerTDFN | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | 5 | 1 | Single | 1 | FET General Purpose Power | 9 ns | 33ns | 4 ns | 15 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 760mW Ta | 9A | 30V | N-Channel | 1113pF @ 15V | 5.8m Ω @ 18A, 10V | 2.1V @ 250μA | 9A Ta 52A Tc | 18.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI8810EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si8810edbt2e1-datasheets-1683.pdf | 4-XFBGA | 21 Weeks | 4 | yes | EAR99 | Tin | No | e3 | 260 | 30 | 900mW | 1 | 12ns | 7 ns | 25 ns | 2.1A | 8V | 500mW Ta | 20V | N-Channel | 245pF @ 10V | 72m Ω @ 1A, 4.5V | 900mV @ 250μA | 8nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K131TU,LF | Toshiba Semiconductor and Storage | $0.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 3-SMD, Flat Lead | 12 Weeks | 30V | 500mW Ta | N-Channel | 450pF @ 15V | 27.6m Ω @ 4A, 10V | 2.5V @ 1mA | 6A Ta | 10.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2130L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp2130l7-datasheets-1503.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | 3 | 16 Weeks | 7.994566mg | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1.4W | 1 | Other Transistors | 12 ns | 20ns | 20 ns | 38 ns | 3A | 12V | SILICON | SWITCHING | 20V | 1.4W Ta | 3A | 0.075Ohm | -20V | P-Channel | 443pF @ 16V | 75m Ω @ 3.5A, 4.5V | 1.25V @ 250μA | 3A Ta | 7.3nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||
| NTHD4P02FT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | -20V | -3A | 8-SMD, Flat Lead | Lead Free | 8 | 8 Weeks | 130MOhm | 8 | ACTIVE (Last Updated: 6 days ago) | yes | No | e3 | Tin (Sn) | YES | DUAL | C BEND | 260 | 8 | 40 | 1.1W | 1 | Other Transistors | 7 ns | 13ns | 13 ns | 33 ns | -2.2A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 1.1W Tj | 9A | -20V | P-Channel | 300pF @ 10V | 155m Ω @ 2.2A, 4.5V | 1.2V @ 250μA | 2.2A Tj | 6nC @ 4.5V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| NVTFS4824NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-nvtfs4824ntag-datasheets-1551.pdf | 8-PowerWDFN | 3.15mm | 750μm | 3.15mm | Lead Free | 5 | 23 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | 8 | Single | 3.2W | 1 | FET General Purpose Power | R-PDSO-F5 | 12 ns | 27ns | 6 ns | 20 ns | 46A | 20V | SILICON | DRAIN | 30V | 30V | 3.2W Ta 21W Tc | 402A | 0.0075Ohm | 72 mJ | N-Channel | 1740pF @ 12V | 4.7m Ω @ 23A, 10V | 2.5V @ 250μA | 18.2A Ta | 14nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| DMP2070UCB6-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmp2070ucb67-datasheets-1518.pdf | 6-UFBGA, WLBGA | 1mm | 620μm | 1.5mm | 6 | 7 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | AEC-Q101 | BOTTOM | BALL | 260 | 40 | 1 | Other Transistors | 7.3 ns | 14ns | 32 ns | 42.6 ns | 2.5A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 920mW Ta | 3.5A | 0.15Ohm | 20V | P-Channel | 210pF @ 10V | 70m Ω @ 1A, 4.5V | 1V @ 250μA | 2.5A Ta | 2.9nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| DMP21D0UFD-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmp21d0ufd7-datasheets-1512.pdf | 3-UDFN | 3 | 17 Weeks | No SVHC | 3 | yes | EAR99 | LOW THRESHOLD | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3 | 1 | 40 | 1 | Other Transistors | 7.1 ns | 8ns | 18.5 ns | 31.7 ns | 820mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 490mW Ta | 0.495Ohm | -20V | P-Channel | 80pF @ 10V | 495m Ω @ 800mA, 4.5V | 1.2V @ 250μA | 820mA Ta | 3nC @ 4.5V | 1.5V 4.5V | ±8V |
