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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPP60R250CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp60r250cpxksa1-datasheets-3904.pdf | TO-220-3 | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 104W | 1 | Not Qualified | 40 ns | 17ns | 12 ns | 110 ns | 12A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 104W Tc | TO-220AB | 40A | 0.25Ohm | N-Channel | 1200pF @ 100V | 250m Ω @ 7.8A, 10V | 3.5V @ 440μA | 12A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIHP25N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp25n50ege3-datasheets-3910.pdf | TO-220-3 | 19.89mm | Lead Free | 3 | 14 Weeks | 6.000006g | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 250W | 1 | 150°C | R-PSFM-T3 | 19 ns | 36ns | 29 ns | 57 ns | 26A | 30V | SILICON | SWITCHING | 250W Tc | TO-220AB | 50A | 273 mJ | 500V | N-Channel | 1980pF @ 100V | 145m Ω @ 12A, 10V | 4V @ 250μA | 26A Tc | 86nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SUP90140E-GE3 | Vishay Siliconix | $2.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup90140ege3-datasheets-3917.pdf | TO-220-3 | 3 | 14 Weeks | Unknown | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 4V | 375W Tc | TO-220AB | 240A | 0.018Ohm | 180 mJ | N-Channel | 4132pF @ 100V | 17m Ω @ 30A, 10V | 4V @ 250μA | 90A Tc | 96nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ44SPBF | Vishay Siliconix | $1.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz44spbf-datasheets-3836.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 28mOhm | 220 | No | 1 | Single | 3.7W | 1 | D2PAK | 3.3nF | 17 ns | 230ns | 110 ns | 42 ns | 50A | 10V | 60V | 2V | 3.7W Ta 150W Tc | 28mOhm | N-Channel | 3300pF @ 25V | 28mOhm @ 31A, 5V | 2V @ 250μA | 50A Tc | 66nC @ 5V | 28 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| AUIRF3710ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf3710zs-datasheets-3840.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.3mm | 2 | 16 Weeks | No SVHC | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 160W | 1 | FET General Purpose Power | R-XSSO-G2 | 17 ns | 77ns | 56 ns | 41 ns | 59A | 20V | SILICON | SWITCHING | 2V | 160W Tc | 240A | 200 mJ | 100V | N-Channel | 2900pF @ 25V | 2 V | 18m Ω @ 35A, 10V | 4V @ 250μA | 59A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STF10LN80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf10ln80k5-datasheets-3727.pdf | TO-220-3 Full Pack | Lead Free | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF10LN | NOT SPECIFIED | 8A | 800V | 4V | 25W Tc | N-Channel | 427pF @ 100V | 630m Ω @ 4A, 10V | 5V @ 100μA | 8A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF20N50T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp20n50-datasheets-3525.pdf | 500V | 20A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 9 Weeks | 2.27g | 230MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 38.5W | 1 | FET General Purpose Power | 95 ns | 375ns | 105 ns | 100 ns | 20A | 30V | SILICON | ISOLATED | SWITCHING | 38.5W Tc | TO-220AB | 80A | 500V | N-Channel | 3120pF @ 25V | 230m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 59.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| STP24NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw24nm60n-datasheets-2470.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 190MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Tin (Sn) | STP24N | 3 | Single | 120W | 1 | FET General Purpose Power | 11.5 ns | 16.5ns | 37 ns | 73 ns | 17A | 30V | SILICON | DRAIN | SWITCHING | 600V | 3V | 125W Tc | TO-220AB | 68A | 650V | N-Channel | 1400pF @ 50V | 190m Ω @ 8A, 10V | 4V @ 250μA | 17A Tc | 46nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| R6020ENX | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-220-3 Full Pack | 10.3mm | 15.4mm | 4.8mm | Lead Free | 3 | 18 Weeks | No SVHC | 3 | not_compliant | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 35 ns | 150 ns | 20A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | 4V | 50W Tc | TO-220AB | 80A | N-Channel | 1400pF @ 25V | 196m Ω @ 10A, 10V | 4V @ 1mA | 20A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FDP3632 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdh3632-datasheets-1444.pdf | 100V | 44A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 4 Weeks | 1.8g | No SVHC | 9MOhm | 3 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Single | 310W | 1 | 30 ns | 39ns | 46 ns | 96 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 4V | 310W Tc | TO-220AB | 100V | N-Channel | 6000pF @ 25V | 9m Ω @ 80A, 10V | 4V @ 250μA | 12A Ta 80A Tc | 110nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FDPF15N65 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdpf15n65-datasheets-3765.pdf | TO-220-3 Full Pack | 10.16mm | 15.87mm | 4.7mm | 3 | 9 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | FAST SWITCHING | No | e3 | Tin (Sn) | Single | 38.5W | 1 | FET General Purpose Power | 65 ns | 125ns | 65 ns | 105 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 38.5W Tc | TO-220AB | 60A | 0.44Ohm | 650V | N-Channel | 3095pF @ 25V | 440m Ω @ 7.5A, 10V | 5V @ 250μA | 15A Tc | 63nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| FDP047AN08A0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-lm7918ct-datasheets-7491.pdf | 75V | 80A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 1.8g | No SVHC | 4.7MOhm | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Single | 310W | 1 | 18 ns | 88ns | 45 ns | 40 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 310W Tc | TO-220AB | 475 mJ | 75V | N-Channel | 6600pF @ 25V | 4.7m Ω @ 80A, 10V | 4V @ 250μA | 15A Tc | 138nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STF14NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp14nm50n-datasheets-4048.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 320MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF14 | 3 | Single | 25W | 1 | FET General Purpose Power | 10.2 ns | 16ns | 22 ns | 42 ns | 12A | 25V | SILICON | ISOLATED | SWITCHING | 3V | 25W Tc | TO-220AB | 48A | 500V | N-Channel | 816pF @ 50V | 320m Ω @ 6A, 10V | 4V @ 100μA | 12A Tc | 27nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| AUIRF1404Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf1404z-datasheets-3786.pdf | TO-220-3 | 10.668mm | 9.017mm | 4.826mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | No | Single | 200W | 1 | FET General Purpose Power | 18 ns | 110ns | 58 ns | 36 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 2V | 200W Tc | TO-220AB | 480 mJ | 40V | N-Channel | 4340pF @ 25V | 3.7m Ω @ 75A, 10V | 4V @ 250μA | 160A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| PSMN1R9-40PLQ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn1r940plq-datasheets-3796.pdf | TO-220-3 | 3 | 12 Weeks | 6.000006g | 3 | NO | 3 | 1 | Single | 1 | 95 ns | 118ns | 119 ns | 195 ns | 150A | 20V | 40V | SILICON | DRAIN | SWITCHING | 349W Tc | TO-220AB | N-Channel | 13200pF @ 25V | 1.7m Ω @ 25A, 10V | 2.1V @ 1mA | 150A Tc | 120nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP26N30X3 | IXYS | $3.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy26n30x3-datasheets-3776.pdf | TO-220-3 | 19 Weeks | 300V | 170W Tc | N-Channel | 1.465nF @ 25V | 66m Ω @ 13A, 10V | 4.5V @ 500μA | 26A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP80090E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sup80090ege3-datasheets-3808.pdf | TO-220-3 | 3 | 14 Weeks | Unknown | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 128A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 5V | 375W Tc | TO-220AB | 240A | 0.011Ohm | 180 mJ | N-Channel | 3425pF @ 75V | 9.4m Ω @ 30A, 10V | 5V @ 250μA | 128A Tc | 95nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDP038AN06A0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp038an06a0-datasheets-3810.pdf | 60V | 80A | TO-220-3 | 10.67mm | 9.65mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 3.8MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Single | 310W | 1 | FET General Purpose Power | 17 ns | 144ns | 60 ns | 34 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 4V | 310W Tc | TO-220AB | 625 mJ | 60V | N-Channel | 6400pF @ 25V | 3.8m Ω @ 80A, 10V | 4V @ 250μA | 17A Ta 80A Tc | 124nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFPC40PBF | Vishay Siliconix | $2.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpc40pbf-datasheets-3826.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 1.2Ohm | 3 | No | 1 | Single | 150W | 1 | TO-247-3 | 1.3nF | 13 ns | 18ns | 20 ns | 55 ns | 6.8A | 20V | 600V | 4V | 150W Tc | 940 ns | 1.2Ohm | 600V | N-Channel | 1300pF @ 25V | 4 V | 1.2Ohm @ 4.1A, 10V | 4V @ 250μA | 6.8A Tc | 60nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STP28N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw28n65m2-datasheets-0439.pdf | TO-220-3 | 10.4mm | 19.68mm | 4.6mm | Lead Free | 3 | 16 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STP28N | 1 | Single | NOT SPECIFIED | 170W | 1 | FET General Purpose Power | 150°C | 13.4 ns | 59 ns | 20A | 25V | SILICON | DRAIN | SWITCHING | 3V | 170W Tc | TO-220AB | 80A | 760 mJ | 650V | N-Channel | 1440pF @ 100V | 180m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 35nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| MCT04P06-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-mct04p06tp-datasheets-3287.pdf | TO-261-4, TO-261AA | 12 Weeks | 60V | 2W | P-Channel | 650pF @ 15V | 80m Ω @ 3.1A, 10V | 3V @ 250μA | 3.5A | 12nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIBC30GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfibc30gpbf-datasheets-3611.pdf | 600V | 2.5A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 660pF | 11 ns | 13ns | 14 ns | 35 ns | 2.5A | 20V | 600V | 35W Tc | 2.2Ohm | 600V | N-Channel | 660pF @ 25V | 2.2Ohm @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 31nC @ 10V | 2.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STP7N80K5 | STMicroelectronics | $3.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu7n80k5-datasheets-5318.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STP7N | Single | 110W | 1 | FET General Purpose Power | 11.3 ns | 8.3ns | 20.2 ns | 23.7 ns | 6A | 30V | SILICON | DRAIN | SWITCHING | 110W Tc | TO-220AB | 6A | 24A | 88 mJ | 800V | N-Channel | 360pF @ 100V | 1.2 Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 13.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STH180N10F3-2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sth180n10f32-datasheets-3592.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15.8mm | 4.8mm | 10.4mm | Lead Free | 2 | 12 Weeks | No SVHC | 4.5MOhm | 4 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STH180 | 3 | Single | 30 | 315W | 1 | FET General Purpose Power | R-PSSO-G2 | 25.6 ns | 97.1ns | 6.9 ns | 99.9 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 2V | 315W Tc | 720A | 100V | N-Channel | 6665pF @ 25V | 4.5m Ω @ 60A, 10V | 4V @ 250μA | 180A Tc | 114.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFB9N65APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-irfb9n65apbf-datasheets-3633.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 930mOhm | 3 | Tin | No | 1 | Single | 167W | 1 | TO-220AB | 1.417nF | 14 ns | 20ns | 18 ns | 34 ns | 8.5A | 30V | 650V | 4V | 167W Tc | 739 ns | 930mOhm | N-Channel | 1417pF @ 25V | 4 V | 930mOhm @ 5.1A, 10V | 4V @ 250μA | 8.5A Tc | 48nC @ 10V | 930 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIHJ10N60E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihj10n60et1ge3-datasheets-3641.pdf | 8-PowerTDFN | 1.267mm | 14 Weeks | 1 | 89W | 150°C | 16 ns | 31 ns | 10A | 30V | 89W Tc | 600V | N-Channel | 784pF @ 100V | 360m Ω @ 5A, 10V | 4.5V @ 250μA | 10A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB9N60APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfb9n60apbf-datasheets-3643.pdf | 600V | 9.2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 750mOhm | 3 | 1 | Single | 170W | 1 | TO-220AB | 1.4nF | 13 ns | 25ns | 22 ns | 30 ns | 9.2A | 30V | 600V | 4V | 170W Tc | 750mOhm | 600V | N-Channel | 1400pF @ 25V | 4 V | 750mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 49nC @ 10V | 750 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| BUK7M20-40HX | Nexperia USA Inc. | $1.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk7m2040hx-datasheets-3310.pdf | SOT-1210, 8-LFPAK33 (5-Lead) | 26 Weeks | 40V | 38W Ta | N-Channel | 598pF @ 25V | 20m Ω @ 10A, 10V | 3.6V @ 1mA | 25A Ta | 10.2nC @ 10V | 10V | +20V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF11N60NT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fcpf11n60nt-datasheets-3660.pdf | TO-220-3 Full Pack | 10.16mm | 15.9mm | 4.7mm | 3 | 15 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 32.1W | 1 | FET General Purpose Power | 13.6 ns | 9.1ns | 10 ns | 42 ns | 10.8A | 30V | SILICON | ISOLATED | SWITCHING | 2V | 32.1W Tc | TO-220AB | 0.299Ohm | 600V | N-Channel | 1505pF @ 100V | 299m Ω @ 5.4A, 10V | 4V @ 250μA | 10.8A Tc | 35.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IPL60R105P7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl60r105p7auma1-datasheets-3527.pdf | 4-PowerTSFN | 4 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 137W Tc | 100A | 0.105Ohm | 105 mJ | N-Channel | 1952pF @ 400V | 105m Ω @ 10.5A, 10V | 4V @ 530μA | 33A Tc | 45nC @ 10V | 10V | ±20V |
