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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPP60R099C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp60r099c7xksa1-datasheets-4454.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 22A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 110W Tc | TO-220AB | 83A | 0.099Ohm | 97 mJ | N-Channel | 1819pF @ 400V | 99m Ω @ 9.7A, 10V | 4V @ 490μA | 22A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI40N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp40n65m2-datasheets-1985.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 9.35mm | 4.6mm | 12 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STI40N | Single | NOT SPECIFIED | FET General Purpose Power | 15 ns | 96.5 ns | 32A | 25V | 650V | 250W Tc | N-Channel | 2355pF @ 100V | 99m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 56.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH22N60P3 | IXYS | $5.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh22n60p3-datasheets-4386.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 3 | 30 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 500W | 1 | FET General Purpose Power | Not Qualified | 28 ns | 17ns | 19 ns | 54 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 5V | 500W Tc | TO-247AD | 55A | 400 mJ | 600V | N-Channel | 2600pF @ 25V | 360m Ω @ 11A, 10V | 5V @ 1.5mA | 22A Tc | 38nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFP14N85X | IXYS | $29.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfp14n85x-datasheets-4389.pdf | TO-220-3 | 19 Weeks | yes | 850V | 460W Tc | N-Channel | 1043pF @ 25V | 550m Ω @ 500mA, 10V | 5.5V @ 1mA | 14A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA80R280P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa80r280p7xksa1-datasheets-4391.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 30W Tc | TO-220AB | 45A | 0.28Ohm | 43 mJ | N-Channel | 1200pF @ 500V | 280m Ω @ 7.2A, 10V | 3.5V @ 360μA | 17A Tc | 36nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC40LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfbc40lcpbf-datasheets-4396.pdf | 600V | 6.2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | No SVHC | 1.2Ohm | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.1nF | 12 ns | 20ns | 17 ns | 27 ns | 6.2A | 30V | 600V | 600V | 4V | 125W Tc | 1.2Ohm | 600V | N-Channel | 1100pF @ 25V | 4 V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 39nC @ 10V | 1.2 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SPW15N60C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spw15n60c3fksa1-datasheets-4404.pdf | 650V | 15A | TO-247-3 | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 156W | 1 | Not Qualified | 5 ns | 50 ns | 15A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | 156W Tc | TO-247AD | 45A | 0.28Ohm | 460 mJ | N-Channel | 1660pF @ 25V | 280m Ω @ 9.4A, 10V | 3.9V @ 675μA | 15A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPP028N08N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp028n08n3gxksa1-datasheets-4327.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | No SVHC | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 300W | 1 | Not Qualified | 28 ns | 73ns | 33 ns | 86 ns | 100A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | 400A | 0.0028Ohm | N-Channel | 14200pF @ 40V | 2.8m Ω @ 100A, 10V | 3.5V @ 270μA | 100A Tc | 206nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPA60R099P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r099p7xksa1-datasheets-4333.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 29W Tc | TO-220AB | 100A | 0.099Ohm | 105 mJ | N-Channel | 1952pF @ 400V | 99m Ω @ 10.5A, 10V | 4V @ 530μA | 31A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF10N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf10n80k5-datasheets-4337.pdf | TO-220-3 Full Pack | 17 Weeks | 329.988449mg | 470mOhm | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF10N | 1 | Single | NOT SPECIFIED | FET General Purpose Power | 14.5 ns | 11ns | 14 ns | 35 ns | 9A | 30V | 30W Tc | 9A | 800V | N-Channel | 635pF @ 100V | 600m Ω @ 4.5A, 10V | 5V @ 100μA | 9A Tc | 22nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP020N06B-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdp020n06bf102-datasheets-4341.pdf | TO-220-3 | 7 Weeks | yes | NO | FET General Purpose Power | Single | 60V | 333W Tc | 120A | N-Channel | 20930pF @ 30V | 2m Ω @ 100A, 10V | 4.5V @ 250μA | 120A Tc | 268nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDA28N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fda28n50-datasheets-4350.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 3 | 9 Weeks | 6.401g | 155MOhm | 2 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Single | 310W | 1 | FET General Purpose Power | R-PSFM-T3 | 56 ns | 126ns | 110 ns | 210 ns | 28A | 30V | SILICON | SWITCHING | 310W Tc | 500V | N-Channel | 5140pF @ 25V | 155m Ω @ 14A, 10V | 5V @ 250μA | 28A Tc | 105nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R099P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r099p6xksa1-datasheets-4358.pdf | TO-220-3 Full Pack | Lead Free | 18 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | NOT SPECIFIED | 20 ns | 10ns | 5 ns | 50 ns | 37.9A | 30V | 600V | 34W Tc | N-Channel | 3330pF @ 100V | 99m Ω @ 14.5A, 10V | 4.5V @ 1.21mA | 37.9A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW12NK80Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp12nk80z-datasheets-6007.pdf | 800V | 10.5A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 750mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STW12N | 3 | Single | 190W | 1 | FET General Purpose Power | 30 ns | 18ns | 20 ns | 70 ns | 10.5A | 30V | SILICON | SWITCHING | 3.75V | 190W Tc | TO-247AC | 42A | 400 mJ | 800V | N-Channel | 2620pF @ 25V | 750m Ω @ 5.25A, 10V | 4.5V @ 100μA | 10.5A Tc | 87nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| STF24N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf24n60dm2-datasheets-4369.pdf | TO-220-3 Full Pack | Lead Free | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF24 | NOT SPECIFIED | 18A | 600V | 30W Tc | N-Channel | 1055pF @ 100V | 200m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 29nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP14N85XM | IXYS | $5.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp14n85xm-datasheets-4373.pdf | TO-220-3 Full Pack | 19 Weeks | yes | 850V | 38W Tc | N-Channel | 1043pF @ 25V | 550m Ω @ 7A, 10V | 5.5V @ 1mA | 14A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP270N8F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp270n8f7-datasheets-4375.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 2.1MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA LOW RESISTANCE | No | STP270 | Single | 315W | 1 | FET General Purpose Powers | 56 ns | 180ns | 42 ns | 98 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 4V | 315W Tc | TO-220AB | 720A | 80V | N-Channel | 13600pF @ 50V | 2.5m Ω @ 90A, 10V | 4V @ 250μA | 180A Tc | 193nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPP60R099P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r099p6xksa1-datasheets-4358.pdf | TO-220-3 | 20.7mm | Lead Free | 18 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 1 | NOT SPECIFIED | 278W | 150°C | 20 ns | 10ns | 5 ns | 50 ns | 37.9A | 20V | 600V | 3.5V | 278W Tc | 600V | N-Channel | 3330pF @ 100V | 99m Ω @ 14.5A, 10V | 4.5V @ 1.21mA | 37.9A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK25A60X5,S5X | Toshiba Semiconductor and Storage | $3.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 2.4nF | 25A | 600V | 45W Tc | N-Channel | 2400pF @ 300V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 25A Ta | 60nC @ 10V | 140 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP15NK50ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -50°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw15nk50z-datasheets-1890.pdf | 500V | 14A | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 12 Weeks | 9.071847g | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | HIGH VOLTAGE | not_compliant | e3 | Matte Tin (Sn) - annealed | NOT SPECIFIED | STP15N | 3 | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | 20 ns | 23ns | 15 ns | 62 ns | 14A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 40W Tc | TO-220AB | 56A | 500V | N-Channel | 2260pF @ 25V | 340m Ω @ 7A, 10V | 4.5V @ 100μA | 14A Tc | 106nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| FDA28N50F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fda28n50f-datasheets-4310.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 3 | 12 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | AVALANCHE RATED | No | 8541.29.00.95 | e3 | Tin (Sn) | Single | 310W | 1 | FET General Purpose Power | 67 ns | 137ns | 101 ns | 192 ns | 28A | 30V | SILICON | SWITCHING | 310W Tc | 112A | 0.175Ohm | 500V | N-Channel | 5387pF @ 25V | 175m Ω @ 14A, 10V | 5V @ 250μA | 28A Tc | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| FCP22N60N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcpf22n60nt-datasheets-4253.pdf | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 12 Weeks | 1.8g | No SVHC | 165mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | Single | 205W | 1 | TO-220-3 | 1.95nF | 16.9 ns | 16.7ns | 4 ns | 49 ns | 22A | 30V | 600V | 3V | 205W Tc | 53 ns | 140mOhm | 600V | N-Channel | 1950pF @ 100V | 3 V | 165mOhm @ 11A, 10V | 4V @ 250μA | 22A Tc | 45nC @ 10V | 165 mΩ | 10V | ±45V | |||||||||||||||||||||||||||||||||||||||||||||
| STI24NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw24nm60n-datasheets-2470.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 10.75mm | 4.6mm | Lead Free | 3 | No SVHC | 3 | NRND (Last Updated: 7 months ago) | EAR99 | No | SINGLE | STI24N | 3 | 125W | 1 | 11.5 ns | 16.5ns | 37 ns | 73 ns | 17A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 3V | 125W Tc | 68A | N-Channel | 1400pF @ 50V | 190m Ω @ 8A, 10V | 4V @ 250μA | 17A Tc | 46nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPW80R360P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/infineontechnologies-ipw80r360p7xksa1-datasheets-4238.pdf | TO-247-3 | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 84W Tc | 34A | 0.36Ohm | 34 mJ | N-Channel | 930pF @ 500V | 360m Ω @ 5.6A, 10V | 3.5V @ 280μA | 13A Tc | 30nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R165CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp60r165cpxksa1-datasheets-4241.pdf | 600V | 21A | TO-220-3 | Lead Free | 2 | 8 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 192W | 1 | Not Qualified | R-PSSO-G2 | 12 ns | 5ns | 50 ns | 21A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 192W Tc | 522 mJ | N-Channel | 2000pF @ 100V | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 21A Tc | 52nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFPG40PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfpg40pbf-datasheets-4247.pdf | 1kV | 4.3A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 150W | 1 | TO-247-3 | 1.6nF | 15 ns | 33ns | 30 ns | 100 ns | 4.3A | 20V | 1000V | 4V | 150W Tc | 710 ns | 3.5Ohm | 1kV | N-Channel | 1600pF @ 25V | 4 V | 3.5Ohm @ 2.6A, 10V | 4V @ 250μA | 4.3A Tc | 120nC @ 10V | 3.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FCPF22N60NT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcpf22n60nt-datasheets-4253.pdf | TO-220-3 Full Pack | 10.16mm | 15.9mm | 4.7mm | Lead Free | 3 | 15 Weeks | 2.27g | No SVHC | 165mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 39W | 1 | FET General Purpose Power | Not Qualified | 16.9 ns | 16.7ns | 4 ns | 49 ns | 22A | 30V | SILICON | ISOLATED | SWITCHING | 3V | 39W Tc | TO-220AB | 66A | 672 mJ | 600V | N-Channel | 1950pF @ 100V | 165m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 45nC @ 10V | 10V | ±45V | |||||||||||||||||||||||||||||||||||||
| STP16N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp16n65m5-datasheets-4261.pdf | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 17 Weeks | No SVHC | 299mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | STP16N | 3 | Single | 90W | 1 | FET General Purpose Power | 25 ns | 9ns | 7 ns | 30 ns | 12A | 25V | SILICON | SWITCHING | 4V | 90W Tc | TO-220AB | 48A | 200 mJ | 650V | N-Channel | 1250pF @ 100V | 299m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 45nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| STF16N50M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf16n50m2-datasheets-4268.pdf | TO-220-3 Full Pack | 16 Weeks | 329.988449mg | 240mOhm | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF16 | 1 | Single | NOT SPECIFIED | 9.6 ns | 7.6ns | 10 ns | 32 ns | 13A | 25V | 500V | 25W Tc | N-Channel | 710pF @ 100V | 280m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 19.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP064PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfp064pbf-datasheets-4272.pdf | 60V | 70A | TO-247-3 | 15.87mm | 25.11mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 9mOhm | 3 | Tin | No | 80A | 60V | 1 | Single | 300W | 1 | 175°C | TO-247-3 | 7.4nF | 21 ns | 190ns | 190 ns | 110 ns | 70A | 20V | 60V | 4V | 300W Tc | 9mOhm | 60V | N-Channel | 7400pF @ 25V | 4 V | 9mOhm @ 78A, 10V | 4V @ 250μA | 70A Tc | 190nC @ 10V | 9 mΩ | 10V | ±20V |
