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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDP22N50N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdp22n50n-datasheets-3693.pdf | TO-220-3 | 9.9mm | 9.2mm | 4.5mm | Lead Free | 3 | 5 Weeks | 1.8g | 185mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 312.5W | 1 | FET General Purpose Power | Not Qualified | 22 ns | 50ns | 35 ns | 48 ns | 22A | 30V | SILICON | SWITCHING | 312.5W Tc | TO-220AB | 88A | 500V | N-Channel | 3200pF @ 25V | 220m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IPI024N06N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipi024n06n3gxksa1-datasheets-3703.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10mm | 9.25mm | 4.4mm | Lead Free | 3 | 18 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | Not Qualified | 41 ns | 80ns | 24 ns | 79 ns | 120A | 20V | 60V | SILICON | SWITCHING | 250W Tc | 480A | 0.0024Ohm | 60V | N-Channel | 23000pF @ 30V | 2.4m Ω @ 100A, 10V | 4V @ 196μA | 120A Tc | 275nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFP3415PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irfp3415pbf-datasheets-3709.pdf&product=infineontechnologies-irfp3415pbf-6832434 | 150V | 43A | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 12 Weeks | No SVHC | 42mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Single | 200W | 1 | FET General Purpose Power | 12 ns | 55ns | 69 ns | 71 ns | 43A | 20V | 150V | SILICON | DRAIN | SWITCHING | 4V | 200W Tc | TO-247AC | 590 mJ | 150V | N-Channel | 2400pF @ 25V | 4 V | 42m Ω @ 22A, 10V | 4V @ 250μA | 43A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STP28N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw28n65m2-datasheets-0439.pdf | TO-220-3 | 10.4mm | 19.68mm | 4.6mm | Lead Free | 3 | 16 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STP28N | 1 | Single | NOT SPECIFIED | 170W | 1 | FET General Purpose Power | 150°C | 13.4 ns | 59 ns | 20A | 25V | SILICON | DRAIN | SWITCHING | 3V | 170W Tc | TO-220AB | 80A | 760 mJ | 650V | N-Channel | 1440pF @ 100V | 180m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 35nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTA200N055T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta200n055t2-datasheets-3520.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 22ns | 27 ns | 49 ns | 200A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 500A | 0.0042Ohm | 600 mJ | 55V | N-Channel | 6800pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 250μA | 200A Tc | 109nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRLI630GPBF | Vishay Siliconix | $2.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irli630gpbf-datasheets-3522.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 400mOhm | 3 | No | 1 | Single | TO-220-3 | 1.1nF | 8 ns | 57ns | 33 ns | 38 ns | 6.2A | 10V | 200V | 1V | 35W Tc | 400mOhm | 200V | N-Channel | 1100pF @ 25V | 400mOhm @ 3.7A, 5V | 2V @ 250μA | 6.2A Tc | 40nC @ 10V | 400 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDA38N30 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fda38n30-datasheets-3532.pdf | TO-3P-3, SC-65-3 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 3 | 4 Weeks | 6.401g | No SVHC | 85MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 312W | 1 | FET General Purpose Power | 53 ns | 110ns | 54 ns | 118 ns | 38A | 30V | SILICON | SWITCHING | 5V | 312W Tc | 300V | N-Channel | 2600pF @ 25V | 85m Ω @ 19A, 10V | 5V @ 250μA | 38A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfz44spbf-datasheets-3540.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | Tin | No | GULL WING | 260 | 4 | 1 | Single | 40 | 3.7W | 1 | R-PSSO-G2 | 14 ns | 110ns | 92 ns | 45 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.7W Ta 150W Tc | 200A | 0.028Ohm | N-Channel | 1900pF @ 25V | 28m Ω @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| PSMN2R0-60PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn2r060ps127-datasheets-3544.pdf | TO-220-3 | 3 | 12 Weeks | not_compliant | e3 | Tin (Sn) | NO | SINGLE | 3 | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 338W Tc | TO-220AB | 120A | 1135A | 0.0022Ohm | 913 mJ | N-Channel | 9997pF @ 30V | 2.2m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 137nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT60R102G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ G7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipt60r102g7xtma1-datasheets-3551.pdf | 8-PowerSFN | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | YES | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 141W Tc | 23A | 66A | 0.102Ohm | 78 mJ | N-Channel | 1320pF @ 400V | 102m Ω @ 7.8A, 10V | 4V @ 390μA | 23A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R6-60PSQ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn2r660psq-datasheets-3555.pdf | TO-220-3 | 3 | 12 Weeks | 3 | NO | SINGLE | 3 | 326W | 1 | 50ns | 58 ns | 87 ns | 150A | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 326W Tc | TO-220AB | 961A | 0.0026Ohm | 411 mJ | 60V | N-Channel | 7629pF @ 25V | 2.6m Ω @ 25A, 10V | 4V @ 1mA | 150A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP7NK80Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb7nk80zt4-datasheets-1247.pdf | 800V | 5.2A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - annealed | STP7N | 3 | Single | 125W | 1 | FET General Purpose Power | 20 ns | 12ns | 20 ns | 45 ns | 5.2A | 30V | SILICON | SWITCHING | 3.75V | 125W Tc | TO-220AB | 20.8A | 800V | N-Channel | 1138pF @ 25V | 1.8 Ω @ 2.6A, 10V | 4.5V @ 100μA | 5.2A Tc | 56nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRFPG30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfpg30pbf-datasheets-3563.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 5Ohm | 3 | 1 | Single | 125W | 1 | TO-247-3 | 980pF | 12 ns | 24ns | 29 ns | 89 ns | 3.1A | 20V | 1000V | 4V | 125W Tc | 5Ohm | N-Channel | 980pF @ 25V | 4 V | 5Ohm @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 80nC @ 10V | 5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI3205PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irfi3205pbf-datasheets-3572.pdf | 55V | 64A | TO-220-3 Full Pack | 10.7442mm | 9.8mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 8mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | Single | 63W | 1 | FET General Purpose Power | 2kV | 14 ns | 100ns | 70 ns | 43 ns | 64A | 20V | 55V | SILICON | ISOLATED | SWITCHING | 4V | 63W Tc | TO-220AB | 170 ns | 56A | 480 mJ | 55V | N-Channel | 4000pF @ 25V | 4 V | 8m Ω @ 34A, 10V | 4V @ 250μA | 64A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SUP90N06-6M0P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sup90n066m0pe3-datasheets-3582.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | 14 Weeks | 6.000006g | 3 | EAR99 | No | SUP90N06 | 3 | 1 | Single | 3.75W | 1 | FET General Purpose Power | 16 ns | 10ns | 8 ns | 25 ns | 90A | 20V | 60V | SILICON | SWITCHING | 3.75W Ta 272W Tc | TO-220AB | 240A | 0.006Ohm | 60V | N-Channel | 4700pF @ 30V | 6m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPP60R190C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb60r190c6atma1-datasheets-1817.pdf | TO-220-3 | 3 | 40 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 151W Tc | TO-220AB | 20.2A | 59A | 0.19Ohm | 418 mJ | N-Channel | 1400pF @ 100V | 190m Ω @ 9.5A, 10V | 3.5V @ 630μA | 20.2A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL9N60APBF | Vishay Siliconix | $1.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfsl9n60apbf-datasheets-3597.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Lead Free | 8 Weeks | 2.387001g | Unknown | 750mOhm | 3 | No | 1 | Single | 170W | 1 | I2PAK | 1.4nF | 13 ns | 25ns | 22 ns | 30 ns | 9.2A | 30V | 600V | 4V | 170W Tc | 750mOhm | 600V | N-Channel | 1400pF @ 25V | 750mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 49nC @ 10V | 750 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| FCPF400N80Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fcpf400n80z-datasheets-3500.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 15 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 20 ns | 34ns | 15 ns | 51 ns | 11A | 4.5V | SILICON | ISOLATED | SWITCHING | 800V | 800V | 4.5V | 35.7W Tc | TO-220AB | 0.4Ohm | N-Channel | 2350pF @ 100V | 400m Ω @ 5.5A, 10V | 4.5V @ 1.1mA | 11A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDP050AN06A0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp050an06a0-datasheets-3511.pdf | 60V | 80A | TO-220-3 | 10.67mm | 20.4mm | 4.83mm | Lead Free | 3 | 6 Weeks | 1.8g | No SVHC | 5MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 245W | 1 | FET General Purpose Power | Not Qualified | 175°C | 16 ns | 160ns | 29 ns | 28 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 4V | 245W Tc | TO-220AB | 470 mJ | 60V | N-Channel | 3900pF @ 25V | 5m Ω @ 80A, 10V | 4V @ 250μA | 18A Ta 80A Tc | 80nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BUK7E1R9-40E,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk7e1r940e127-datasheets-3406.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | 2.387001g | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | NO | 3 | 1 | Single | 1 | 35 ns | 49ns | 52 ns | 87 ns | 120A | 20V | 40V | SILICON | DRAIN | SWITCHING | 324W Tc | 40V | N-Channel | 9700pF @ 25V | 1.9m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 118nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL1404PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl1404pbf-datasheets-3410.pdf | 40V | 160A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Lead Free | 3 | 14 Weeks | No SVHC | 4MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 200W | 1 | FET General Purpose Power | 18 ns | 270ns | 37 ns | 38 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 3V | 200W Tc | TO-220AB | 94 ns | 640A | 620 mJ | 40V | N-Channel | 6590pF @ 25V | 4m Ω @ 95A, 10V | 3V @ 250μA | 160A Tc | 140nC @ 5V | 4.3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDPF51N25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/onsemiconductor-fdp51n25-datasheets-3472.pdf | 250V | 28A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 9 Weeks | 2.27g | No SVHC | 60MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 117W | 1 | FET General Purpose Power | Not Qualified | 62 ns | 465ns | 130 ns | 98 ns | 51A | 30V | 250V | SILICON | ISOLATED | SWITCHING | 5V | 38W Tc | TO-220AB | 250V | N-Channel | 3410pF @ 25V | 5 V | 60m Ω @ 25.5A, 10V | 5V @ 250μA | 51A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| BUK6D38-30EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk6d3830ex-datasheets-3020.pdf | 6-UDFN Exposed Pad | 8 Weeks | 30V | 2W Ta 19W Tc | N-Channel | 266pF @ 15V | 38m Ω @ 5.5A, 10V | 2.5V @ 250μA | 5.5A Ta 17A Tc | 8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK65E10N1,S1X | Toshiba Semiconductor and Storage | $1.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 5.4nF | 12 Weeks | 148A | 100V | 192W Tc | N-Channel | 5400pF @ 50V | 4.8m Ω @ 32.5A, 10V | 4V @ 1mA | 148A Ta | 81nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB61N15DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfb61n15dpbf-datasheets-3436.pdf | 150V | 60A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 32Ohm | 3 | EAR99 | No | Single | 330W | 1 | FET General Purpose Power | 18 ns | 110ns | 51 ns | 28 ns | 60A | 16V | 150V | SILICON | DRAIN | SWITCHING | 2.4W Ta 330W Tc | TO-220AB | 250A | 520 mJ | 150V | N-Channel | 3470pF @ 25V | 5.5 V | 32m Ω @ 36A, 10V | 5.5V @ 250μA | 60A Tc | 140nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SIHP12N60E-GE3 | Vishay Siliconix | $1.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp12n60ege3-datasheets-3444.pdf | TO-220-3 | Lead Free | 14 Weeks | 6.000006g | Unknown | 380mOhm | 3 | No | 1 | Single | 147W | 1 | TO-220AB | 937pF | 14 ns | 19ns | 19 ns | 35 ns | 12A | 20V | 600V | 2V | 147W Tc | 320mOhm | 600V | N-Channel | 937pF @ 100V | 380mOhm @ 6A, 10V | 4V @ 250μA | 12A Tc | 58nC @ 10V | 380 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF16N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcpf16n60-datasheets-3449.pdf | TO-220-3 Full Pack | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 43 Weeks | 2.27g | 260MOhm | 3 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 37.9W | 1 | 42 ns | 130ns | 90 ns | 165 ns | 16A | 30V | SILICON | ISOLATED | SWITCHING | 37.9W Tc | TO-220AB | 48A | 600V | N-Channel | 2250pF @ 25V | 260m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| FDP5800 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp5800-datasheets-3456.pdf | 60V | 14A | TO-220-3 | 9.9mm | 15.7mm | 4.5mm | Lead Free | 3 | 11 Weeks | 4.535924g | No SVHC | 6MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | 81A | e3 | Tin (Sn) | 60V | NOT SPECIFIED | Single | NOT SPECIFIED | 242W | 1 | FET General Purpose Power | Not Qualified | 18 ns | 19ns | 9 ns | 55 ns | 80A | 20V | SILICON | 2.5V | 242W Tc | 652 mJ | 60V | N-Channel | 9160pF @ 15V | 6m Ω @ 80A, 10V | 2.5V @ 250μA | 14A Ta 80A Tc | 145nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| PSMN3R5-80PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn3r580ps127-datasheets-3466.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 338W | 1 | 41 ns | 43ns | 44 ns | 109 ns | 120A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 338W Tc | TO-220AB | 676 mJ | 80V | N-Channel | 9961pF @ 40V | 3.5m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 139nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS11N50APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfs11n50atrlp-datasheets-5178.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3 | 1 | Single | 170W | 1 | D2PAK | 1.423nF | 14 ns | 35ns | 28 ns | 32 ns | 11A | 30V | 500V | 4V | 170W Tc | 520mOhm | N-Channel | 1423pF @ 25V | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 520 mΩ | 10V | ±30V |
