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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SPP21N50C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp21n50c3xksa1-datasheets-4095.pdf | 560V | 21A | TO-220-3 | Lead Free | 8 Weeks | 3 | Halogen Free | Single | 208W | 1 | PG-TO220-3-1 | 2.4nF | 10 ns | 5ns | 4.5 ns | 67 ns | 21A | 20V | 500V | 500V | 208W Tc | 190mOhm | 560V | N-Channel | 2400pF @ 25V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 21A Tc | 95nC @ 10V | 190 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDA69N25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fda69n25-datasheets-4100.pdf | 250V | 69A | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 3 | 9 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | FAST SWITCHING | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | 95 ns | 885ns | 220 ns | 130 ns | 69A | 30V | SILICON | SWITCHING | 480W Tc | 276A | 250V | N-Channel | 4640pF @ 25V | 41m Ω @ 34.5A, 10V | 5V @ 250μA | 69A Tc | 100nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRF135SA204 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf135sa204-datasheets-4073.pdf | TO-263-7, D2Pak (6 Leads + Tab) Variant | 6 | 12 Weeks | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 135V | 135V | 500W Tc | TO-263CB | 608A | 0.0059Ohm | 1280 mJ | N-Channel | 11690pF @ 50V | 5.9m Ω @ 96A, 10V | 4V @ 250μA | 160A Tc | 315nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP254PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp254pbf-datasheets-4012.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 140mOhm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.7nF | 15 ns | 63ns | 50 ns | 74 ns | 23A | 20V | 250V | 4V | 190W Tc | 560 ns | 140mOhm | 250V | N-Channel | 2700pF @ 25V | 4 V | 140mOhm @ 14A, 10V | 4V @ 250μA | 23A Tc | 140nC @ 10V | 140 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFIBC40GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irfibc40gpbf-datasheets-4018.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | No SVHC | 1.2Ohm | 3 | No | 1 | Single | 40W | 1 | TO-220-3 | 1.3nF | 2.5kV | 13 ns | 18ns | 20 ns | 55 ns | 3.5A | 20V | 600V | 600V | 4V | 40W Tc | 1.2Ohm | 600V | N-Channel | 1300pF @ 25V | 4 V | 1.2Ohm @ 2.1A, 10V | 4V @ 250μA | 3.5A Tc | 60nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPA65R150CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb65r150cfdatma1-datasheets-9715.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 12.4 ns | 7.6ns | 5.6 ns | 52.8 ns | 22.4A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 34.7W Tc | TO-220AB | 72A | 0.15Ohm | 614 mJ | 700V | N-Channel | 2340pF @ 100V | 150m Ω @ 9.3A, 10V | 4.5V @ 1mA | 22.4A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPW60R170CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw60r170cfd7xksa1-datasheets-3931.pdf | TO-247-3 | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 600V | 75W Tc | 14A | 51A | 0.17Ohm | 60 mJ | N-Channel | 1199pF @ 400V | 170m Ω @ 6A, 10V | 4.5V @ 300μA | 14A Tc | 28nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB20N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihb20n50ege3-datasheets-3942.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | Unknown | 3 | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 17 ns | 27ns | 25 ns | 48 ns | 19A | 20V | SILICON | SWITCHING | 4V | 179W Tc | 42A | 204 mJ | 500V | N-Channel | 1640pF @ 100V | 184m Ω @ 10A, 10V | 4V @ 250μA | 19A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI9540GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfi9540gpbf-datasheets-3946.pdf | -100V | -13A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 200MOhm | 3 | No | 1 | Single | 42W | 1 | TO-220-3 | 1.4nF | 24 ns | 110ns | 86 ns | 51 ns | -11A | 20V | 100V | -4V | 48W Tc | 200mOhm | -100V | P-Channel | 1400pF @ 25V | 200mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 61nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TK12E80W,S1X | Toshiba Semiconductor and Storage | $4.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | 150°C | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 | 16 Weeks | TO-220 | 800V | 165W Tc | N-Channel | 1400pF @ 300V | 450mOhm @ 5.8A, 10V | 4V @ 570μA | 11.5A Ta | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP16N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfp16n50p-datasheets-3959.pdf | 500V | 16A | TO-220-3 | Lead Free | 3 | 26 Weeks | 400MOhm | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 300W | 1 | FET General Purpose Power | 25ns | 22 ns | 70 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 750 mJ | 500V | N-Channel | 2250pF @ 25V | 400m Ω @ 8A, 10V | 5.5V @ 2.5mA | 16A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| R6030KNZ1C9 | ROHM Semiconductor | $10.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/rohm-r6030knz1c9-datasheets-0166.pdf | TO-247-3 | 3 | 13 Weeks | No SVHC | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 5V | 305W Tc | 90A | N-Channel | 2350pF @ 25V | 130m Ω @ 14.5A, 10V | 5V @ 1mA | 30A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW24N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw24n60dm2-datasheets-3970.pdf | TO-247-3 | Lead Free | 3 | 17 Weeks | 38.000013g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW24N | 1 | Single | NOT SPECIFIED | 1 | 15 ns | 8.7ns | 15 ns | 60 ns | 18A | 25V | SILICON | SWITCHING | 150W Tc | 72A | 0.2Ohm | 600V | N-Channel | 1055pF @ 100V | 200m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 29nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| STI6N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STI6N | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R190E6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw60r190e6fksa1-datasheets-3976.pdf | TO-247-3 | Lead Free | 3 | 12 Weeks | yes | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 151W | 1 | Not Qualified | R-PSFM-T3 | 12 ns | 10ns | 8 ns | 90 ns | 20.2A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 151W Tc | 59A | N-Channel | 1400pF @ 100V | 190m Ω @ 9.5A, 10V | 3.5V @ 630μA | 20.2A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FQA40N25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqa40n25-datasheets-3981.pdf | 250V | 40A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 9 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | Tin | No | e3 | Single | 280W | 1 | FET General Purpose Power | 70 ns | 580ns | 165 ns | 120 ns | 40A | 30V | SILICON | SWITCHING | 5V | 280W Tc | 0.07Ohm | 800 mJ | 250V | N-Channel | 4000pF @ 25V | 70m Ω @ 20A, 10V | 5V @ 250μA | 40A Tc | 110nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| FQA9N90C-F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fqa9n90cf109-datasheets-3987.pdf&product=onsemiconductor-fqa9n90cf109-6832484 | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | 3 | 10 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | Tin | NOT SPECIFIED | Single | NOT SPECIFIED | 280W | 1 | FET General Purpose Power | Not Qualified | 50 ns | 120ns | 75 ns | 100 ns | 9A | 30V | SILICON | SWITCHING | 5V | 280W Tc | 9A | 900 mJ | 900V | N-Channel | 2730pF @ 25V | 1.4 Ω @ 4.5A, 10V | 5V @ 250μA | 9A Tc | 58nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRFB4110GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfb4110gpbf-datasheets-3997.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 3 | 10 Weeks | No SVHC | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 370W | 1 | FET General Purpose Power | Not Qualified | 25 ns | 67ns | 88 ns | 78 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 4V | 370W Tc | TO-220AB | 670A | 0.0045Ohm | 100V | N-Channel | 9620pF @ 50V | 4 V | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 120A Tc | 210nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPP60R160C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r160c6xksa1-datasheets-4007.pdf | TO-220-3 | 3 | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 176W Tc | TO-220AB | 23.8A | 70A | 0.16Ohm | 497 mJ | N-Channel | 1660pF @ 100V | 160m Ω @ 11.3A, 10V | 3.5V @ 750μA | 23.8A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N08S2L07AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-ipb80n08s2l07atma1-datasheets-2126.pdf | TO-220-3 | Contains Lead | 10 Weeks | 3 | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 300W | 1 | 80A | 75V | 300W Tc | N-Channel | 5400pF @ 25V | 7.1m Ω @ 80A, 10V | 2V @ 250μA | 80A Tc | 233nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP160N10T | IXYS | $4.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp160n10t-datasheets-3929.pdf | TO-220-3 | Lead Free | 3 | 17 Weeks | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3 | Single | 430W | 1 | FET General Purpose Powers | R-PSFM-T3 | 61ns | 42 ns | 49 ns | 160A | SILICON | DRAIN | SWITCHING | 430W Tc | TO-220AB | 430A | 0.007Ohm | 500 mJ | 100V | N-Channel | 6600pF @ 25V | 7m Ω @ 25A, 10V | 4.5V @ 250μA | 160A Tc | 132nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IRLZ44SPBF | Vishay Siliconix | $1.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz44spbf-datasheets-3836.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 28mOhm | 220 | No | 1 | Single | 3.7W | 1 | D2PAK | 3.3nF | 17 ns | 230ns | 110 ns | 42 ns | 50A | 10V | 60V | 2V | 3.7W Ta 150W Tc | 28mOhm | N-Channel | 3300pF @ 25V | 28mOhm @ 31A, 5V | 2V @ 250μA | 50A Tc | 66nC @ 5V | 28 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| AUIRF3710ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf3710zs-datasheets-3840.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.3mm | 2 | 16 Weeks | No SVHC | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 160W | 1 | FET General Purpose Power | R-XSSO-G2 | 17 ns | 77ns | 56 ns | 41 ns | 59A | 20V | SILICON | SWITCHING | 2V | 160W Tc | 240A | 200 mJ | 100V | N-Channel | 2900pF @ 25V | 2 V | 18m Ω @ 35A, 10V | 4V @ 250μA | 59A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPP60R299CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipp60r299cpxksa1-datasheets-3848.pdf | 600V | 11A | TO-220-3 | Lead Free | 3 | 8 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 96W | 1 | Not Qualified | 10 ns | 5ns | 40 ns | 11A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 96W Tc | TO-220AB | 0.299Ohm | 290 mJ | N-Channel | 1100pF @ 100V | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 11A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDP027N08B-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdp027n08bf102-datasheets-3854.pdf | TO-220-3 | 9 Weeks | 1.8g | ACTIVE (Last Updated: 1 day ago) | yes | No | Single | 246W | 1 | FET General Purpose Power | 47 ns | 66ns | 41 ns | 87 ns | 223A | 20V | 246W Tc | 80V | N-Channel | 13530pF @ 40V | 2.7m Ω @ 100A, 10V | 4.5V @ 250μA | 120A Tc | 178nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF2204SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf2204spbf-datasheets-3862.pdf | 40V | 170A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | Lead Free | 2 | 14 Weeks | No SVHC | 3.6mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 140ns | 110 ns | 62 ns | 170A | 20V | 40V | SILICON | DRAIN | SWITCHING | 4V | 200W Tc | 75A | 850A | 460 mJ | 40V | N-Channel | 5890pF @ 25V | 4 V | 3.6m Ω @ 130A, 10V | 4V @ 250μA | 170A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| TK12A80W,S4X | Toshiba Semiconductor and Storage | $0.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | 150°C | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 800V | 45W Tc | N-Channel | 1400pF @ 300V | 450mOhm @ 5.8A, 10V | 4V @ 570μA | 11.5A Ta | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AONS21321 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerVDFN | 18 Weeks | 30V | 5W Ta 24.5W Tc | P-Channel | 1180pF @ 15V | 16.5m Ω @ 20A, 10V | 2.3V @ 250μA | 14A Ta 24A Tc | 34nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R099C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r099c6xksa1-datasheets-1717.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | no | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 278W Tc | 37.9A | 112A | 0.099Ohm | 796 mJ | N-Channel | 2660pF @ 100V | 99m Ω @ 18.1A, 10V | 3.5V @ 1.21mA | 37.9A Tc | 119nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHG15N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg15n60ege3-datasheets-3891.pdf | TO-247-3 | 3 | 18 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 600V | 600V | 180W Tc | TO-247AC | 15A | 39A | 0.28Ohm | 102 mJ | N-Channel | 1350pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 78nC @ 10V | 10V | ±30V |
