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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STP16N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp16n65m5-datasheets-4261.pdf | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 17 Weeks | No SVHC | 299mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | STP16N | 3 | Single | 90W | 1 | FET General Purpose Power | 25 ns | 9ns | 7 ns | 30 ns | 12A | 25V | SILICON | SWITCHING | 4V | 90W Tc | TO-220AB | 48A | 200 mJ | 650V | N-Channel | 1250pF @ 100V | 299m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 45nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| STF16N50M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf16n50m2-datasheets-4268.pdf | TO-220-3 Full Pack | 16 Weeks | 329.988449mg | 240mOhm | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF16 | 1 | Single | NOT SPECIFIED | 9.6 ns | 7.6ns | 10 ns | 32 ns | 13A | 25V | 500V | 25W Tc | N-Channel | 710pF @ 100V | 280m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 19.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP064PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfp064pbf-datasheets-4272.pdf | 60V | 70A | TO-247-3 | 15.87mm | 25.11mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 9mOhm | 3 | Tin | No | 80A | 60V | 1 | Single | 300W | 1 | 175°C | TO-247-3 | 7.4nF | 21 ns | 190ns | 190 ns | 110 ns | 70A | 20V | 60V | 4V | 300W Tc | 9mOhm | 60V | N-Channel | 7400pF @ 25V | 4 V | 9mOhm @ 78A, 10V | 4V @ 250μA | 70A Tc | 190nC @ 10V | 9 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPA105N15N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa105n15n3gxksa1-datasheets-4277.pdf | TO-220-3 Full Pack | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 40.5W | 1 | Not Qualified | 17 ns | 20ns | 9 ns | 35 ns | 37A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 40.5W Tc | TO-220AB | 740 mJ | N-Channel | 4300pF @ 75V | 10.5m Ω @ 37A, 10V | 4V @ 160μA | 37A Tc | 55nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPP50R140CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp50r140cpxksa1-datasheets-4284.pdf | TO-220-3 | Lead Free | 3 | 8 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 192W | 1 | Not Qualified | 35 ns | 14ns | 8 ns | 23A | 3.5V | 500V | SILICON | ISOLATED | SWITCHING | 550V | 192W Tc | TO-220AB | 56A | 0.14Ohm | 616 mJ | 500V | N-Channel | 2540pF @ 100V | 140m Ω @ 14A, 10V | 3.5V @ 930μA | 23A Tc | 64nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPA50R140CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa50r140cpxksa1-datasheets-4290.pdf | TO-220-3 Full Pack | 3 | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 34W Tc | TO-220AB | 23A | 56A | 0.14Ohm | 616 mJ | N-Channel | 2540pF @ 100V | 140m Ω @ 14A, 10V | 3.5V @ 930μA | 23A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3746-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-2sk37461e-datasheets-4192.pdf | TO-3P-3, SC-65-3 | 15.6mm | 16.67mm | 4.8mm | Lead Free | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | HIGH RELIABILITY | No | e3 | Tin (Sn) | NO | 3 | Single | 2.5W | 1 | 12 ns | 37ns | 59 ns | 152 ns | 2A | 20V | SILICON | SWITCHING | 1500V | 2.5W Ta 110W Tc | TO-247 | 2A | 4A | 1.5kV | N-Channel | 380pF @ 30V | 13 Ω @ 1A, 10V | 2A Ta | 37.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STB35N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stb35n60dm2-datasheets-3494.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STB35N | NOT SPECIFIED | 28A | 600V | 4V | 210W Tc | N-Channel | 2400pF @ 100V | 110m Ω @ 14A, 10V | 5V @ 250μA | 28A Tc | 54nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH16N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfp16n50p-datasheets-3959.pdf | 500V | 16A | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | FET General Purpose Power | 23 ns | 25ns | 22 ns | 70 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | 0.4Ohm | 750 mJ | 500V | N-Channel | 2250pF @ 25V | 400m Ω @ 8A, 10V | 5.5V @ 2.5mA | 16A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IPP015N04NGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb015n04ngatma1-datasheets-9679.pdf | TO-220-3 | 3 | 13 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 250W Tc | TO-220AB | 120A | 400A | 0.0015Ohm | 865 mJ | N-Channel | 20000pF @ 20V | 1.5m Ω @ 100A, 10V | 4V @ 200μA | 120A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| C3M0280090D | Cree/Wolfspeed | $6.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | SiCFET (Silicon Carbide) | RoHS Compliant | 2005 | TO-247-3 | 16 Weeks | No SVHC | 3 | TO-247-3 | 11.5A | 900V | 2.1V | 54W Tc | 280mOhm | N-Channel | 150pF @ 600V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 11.5A Tc | 9.5nC @ 15V | 15V | +18V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60NB190CF C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | TO-220-3 Full Pack | 36 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 59.5W Tc | N-Channel | 1311pF @ 100V | 190m Ω @ 3.7A, 10V | 4V @ 250μA | 18A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP38N30X3 | IXYS | $4.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfp38n30x3-datasheets-4130.pdf | TO-220-3 | 19 Weeks | compliant | 300V | 240W Tc | N-Channel | 2240pF @ 25V | 50m Ω @ 19A, 10V | 4.5V @ 1mA | 38A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP2710 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp2710-datasheets-4139.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | 42.5MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 260W | 1 | FET General Purpose Power | Not Qualified | 80 ns | 252ns | 154 ns | 112 ns | 50A | 30V | SILICON | SWITCHING | 260W Tc | TO-220AB | 250V | N-Channel | 7280pF @ 25V | 42.5m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 101nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| TK17A80W,S4X | Toshiba Semiconductor and Storage | $2.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | 150°C | Tube | 1 (Unlimited) | 150°C | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 Full Pack | 18.1mm | 16 Weeks | 1 | 45W | 150°C | TO-220SIS | 58 ns | 80 ns | 17A | 20V | 800V | 45W Tc | 250mOhm | 800V | N-Channel | 2050pF @ 300V | 290mOhm @ 8.5A, 10V | 4V @ 850μA | 17A Ta | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihb22n60ee3-datasheets-1845.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 14 Weeks | 1.437803g | Unknown | 180mOhm | 3 | Tin | No | 1 | Single | 227W | 1 | D2PAK | 1.92nF | 18 ns | 68ns | 54 ns | 59 ns | 21A | 20V | 600V | 2V | 227W Tc | 180mOhm | 600V | N-Channel | 1920pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 180 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| FQP22N30 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqp22n30-datasheets-4158.pdf | 300V | 21A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | No SVHC | 160MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 170W | 1 | FET General Purpose Power | 35 ns | 230ns | 100 ns | 85 ns | 21A | 30V | SILICON | SWITCHING | 5V | 170W Tc | TO-220AB | 84A | 300V | N-Channel | 2200pF @ 25V | 5 V | 160m Ω @ 10.5A, 10V | 5V @ 250μA | 21A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRF3703PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf3703pbf-datasheets-4168.pdf | 30V | 210A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 2.8Ohm | 3 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | Tin | No | e3 | 250 | Single | 30 | 230W | 1 | FET General Purpose Power | 18 ns | 123ns | 24 ns | 53 ns | 210A | 20V | 30V | SILICON | DRAIN | SWITCHING | 4V | 3.8W Ta 230W Tc | TO-220AB | 75A | 30V | N-Channel | 8250pF @ 25V | 4 V | 2.8m Ω @ 76A, 10V | 4V @ 250μA | 210A Tc | 209nC @ 10V | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STW10N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw10n95k5-datasheets-4176.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW10N | Single | NOT SPECIFIED | 130W | 1 | 22 ns | 14ns | 15 ns | 51 ns | 8A | 30V | SILICON | SWITCHING | 950V | 950V | 130W Tc | 8A | 0.8Ohm | N-Channel | 630pF @ 100V | 800m Ω @ 4A, 10V | 5V @ 100μA | 8A Tc | 22nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| FQA70N15 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqa70n15-datasheets-4179.pdf | 150V | 70A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 8 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 330W | 1 | FET General Purpose Power | 60 ns | 420ns | 290 ns | 340 ns | 70A | 25V | SILICON | SWITCHING | 4V | 330W Tc | 280A | 0.028Ohm | 150V | N-Channel | 5400pF @ 25V | 28m Ω @ 35A, 10V | 4V @ 250μA | 70A Tc | 175nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| STF25N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf25n60m2ep-datasheets-4187.pdf | TO-220-3 Full Pack | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF25 | NOT SPECIFIED | 18A | 600V | 30W Tc | N-Channel | 1090pF @ 100V | 188m Ω @ 9A, 10V | 4.75V @ 250μA | 18A Tc | 29nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2031ENGRT | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2031-datasheets-1314.pdf | Die | Die | 1.8nF | 31A | 60V | N-Channel | 1800pF @ 300V | 2.6mOhm @ 30A, 5V | 2.5V @ 15mA | 31A Ta | 17nC @ 5V | 2.6 mΩ | 5V | +6V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP21N50C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp21n50c3xksa1-datasheets-4095.pdf | 560V | 21A | TO-220-3 | Lead Free | 8 Weeks | 3 | Halogen Free | Single | 208W | 1 | PG-TO220-3-1 | 2.4nF | 10 ns | 5ns | 4.5 ns | 67 ns | 21A | 20V | 500V | 500V | 208W Tc | 190mOhm | 560V | N-Channel | 2400pF @ 25V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 21A Tc | 95nC @ 10V | 190 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDA69N25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fda69n25-datasheets-4100.pdf | 250V | 69A | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 3 | 9 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | FAST SWITCHING | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | 95 ns | 885ns | 220 ns | 130 ns | 69A | 30V | SILICON | SWITCHING | 480W Tc | 276A | 250V | N-Channel | 4640pF @ 25V | 41m Ω @ 34.5A, 10V | 5V @ 250μA | 69A Tc | 100nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRF135SA204 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf135sa204-datasheets-4073.pdf | TO-263-7, D2Pak (6 Leads + Tab) Variant | 6 | 12 Weeks | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 135V | 135V | 500W Tc | TO-263CB | 608A | 0.0059Ohm | 1280 mJ | N-Channel | 11690pF @ 50V | 5.9m Ω @ 96A, 10V | 4V @ 250μA | 160A Tc | 315nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP254PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp254pbf-datasheets-4012.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 140mOhm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.7nF | 15 ns | 63ns | 50 ns | 74 ns | 23A | 20V | 250V | 4V | 190W Tc | 560 ns | 140mOhm | 250V | N-Channel | 2700pF @ 25V | 4 V | 140mOhm @ 14A, 10V | 4V @ 250μA | 23A Tc | 140nC @ 10V | 140 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFIBC40GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irfibc40gpbf-datasheets-4018.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | No SVHC | 1.2Ohm | 3 | No | 1 | Single | 40W | 1 | TO-220-3 | 1.3nF | 2.5kV | 13 ns | 18ns | 20 ns | 55 ns | 3.5A | 20V | 600V | 600V | 4V | 40W Tc | 1.2Ohm | 600V | N-Channel | 1300pF @ 25V | 4 V | 1.2Ohm @ 2.1A, 10V | 4V @ 250μA | 3.5A Tc | 60nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPA65R150CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb65r150cfdatma1-datasheets-9715.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 12.4 ns | 7.6ns | 5.6 ns | 52.8 ns | 22.4A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 34.7W Tc | TO-220AB | 72A | 0.15Ohm | 614 mJ | 700V | N-Channel | 2340pF @ 100V | 150m Ω @ 9.3A, 10V | 4.5V @ 1mA | 22.4A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| CDM22012-800LRFP SL | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 12 Weeks | 800V | 40W Tc | N-Channel | 1090pF @ 100V | 450m Ω @ 6A, 10V | 4V @ 250μA | 12A Ta | 52.4nC @ 10V | 10V | 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF045N10A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-fdpf045n10a-datasheets-4040.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 8 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | Single | 43W | 1 | FET General Purpose Power | 23 ns | 26ns | 15 ns | 50 ns | 67A | 20V | SILICON | ISOLATED | SWITCHING | 43W Tc | TO-220AB | 268A | 0.0045Ohm | 100V | N-Channel | 5270pF @ 50V | 4.5m Ω @ 67A, 10V | 4V @ 250μA | 67A Tc | 74nC @ 10V | 10V | ±20V |
