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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| 1N4001GPE-E3/91 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4007gpe354-datasheets-2720.pdf | DO-204AL, DO-41, Axial | 12 Weeks | Single | DO-204AL (DO-41) | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 50V | 2 μs | 2 μs | Standard | 50V | 1A | 8pF @ 4V 1MHz | 50V | 5μA @ 50V | 1.1V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| MBRH15040L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh15040l-datasheets-2862.pdf | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky | 40V | 150A | 2000A | 1 | 40V | 5mA @ 40V | 600mV @ 150A | |||||||||||||||||||||||||||||||||||||||||||
| UH6PDHM3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh6pdhm3ah-datasheets-8912.pdf | TO-277, 3-PowerDFN | 3 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | DUAL | FLAT | 175°C | 1 | R-PDSO-F3 | SINGLE | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | TO-277A | 25 ns | Standard | 200V | 6A | 90A | 1 | 6A | 80pF @ 4V 1MHz | 200V | 10μA @ 200V | 1.05V @ 6A | -55°C~175°C | |||||||||||||||||||||||||||||||||||
| SB150-B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sb130t-datasheets-1550.pdf | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 50V | 1A | 50V | 500μA @ 50V | 700mV @ 1A | 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6627U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | SQ-MELF, E | 2 | EAR99 | 8541.10.00.80 | e0 | TIN LEAD | MIL-19500/590F | YES | END | WRAP AROUND | 2 | 1 | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30ns | Standard | 75A | 1 | 4A | 400V | 2μA @ 400V | 1.35V @ 2A | 1.75A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||
| MBRH15030L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh15030l-datasheets-2864.pdf | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 30V | 150A | 2000A | 1 | 30V | 3mA @ 30V | 580mV @ 150A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| RJS6005TDPP-EJ#T2 | Renesas Electronics America | $35.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjs6005tdppejt2-datasheets-8920.pdf | TO-220-2 Full Pack | 2 | 16 Weeks | EAR99 | 8541.10.00.80 | SINGLE | 2 | 150°C | 1 | Rectifier Diodes | R-PSFM-T2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON CARBIDE | 10μA | TO-220AC | 15ns | Schottky | 600V | 15A | 90A | 1 | 10μA @ 600V | 1.8V @ 15A | 15A DC | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| RJU6053SDPE-00#J3 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rju6053sdpe00j3-datasheets-8928.pdf | SC-83 | 2 | 16 Weeks | EAR99 | 8541.10.00.80 | SINGLE | GULL WING | 3 | 150°C | 1 | Rectifier Diodes | R-PSSO-G2 | SINGLE | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25 ns | Standard | 600V | 20A | 60A | 1 | 600V | 1μA @ 600V | 3V @ 20A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| NS8ATHE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 | 2 | 20 Weeks | EAR99 | FREE WHEELING DIODE | unknown | SINGLE | 150°C | 1 | R-PSFM-T2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | TO-220AC | Standard | 50V | 8A | 125A | 1 | 8A | 55pF @ 4V 1MHz | 50V | 10μA @ 50V | 1.1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| UH6PDHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh6pdhm3ah-datasheets-8912.pdf | TO-277, 3-PowerDFN | 3 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | DUAL | FLAT | 175°C | 1 | R-PDSO-F3 | SINGLE | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | TO-277A | 25 ns | Standard | 200V | 6A | 90A | 1 | 6A | 80pF @ 4V 1MHz | 200V | 10μA @ 200V | 1.05V @ 6A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| NS8GTHE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 | 2 | 20 Weeks | EAR99 | FREE WHEELING DIODE | unknown | SINGLE | 150°C | 1 | R-PSFM-T2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | TO-220AC | Standard | 400V | 8A | 125A | 1 | 8A | 55pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| MBRH15035L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh15035l-datasheets-2870.pdf | D-67 | 1 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 35V | 150A | 2000A | 1 | 35V | 3mA @ 35V | 600mV @ 150A | |||||||||||||||||||||||||||||||||||||||||||||
| MBRH20030RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh20030rl-datasheets-2871.pdf | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky, Reverse Polarity | 30V | 200A | 3000A | 1 | 30V | 3mA @ 30V | 580mV @ 200A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| NS8DTHE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 | 2 | 20 Weeks | EAR99 | FREE WHEELING DIODE | unknown | SINGLE | 150°C | 1 | R-PSFM-T2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | TO-220AC | Standard | 200V | 8A | 125A | 1 | 8A | 55pF @ 4V 1MHz | 200V | 10μA @ 200V | 1.1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| SBR2U10LP-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SBR® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbr2u10lp13-datasheets-8485.pdf | 3-UDFN | 3 | 6 Weeks | 3 | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | BOTTOM | NO LEAD | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2000μA | 60 ns | Super Barrier | 10V | 2A | 21A | 1 | 2A | 102pF @ 5V 1MHz | 10V | 2mA @ 10V | 460mV @ 2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| MBRH15045RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh15045rl-datasheets-2860.pdf | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky, Reverse Polarity | 45V | 150A | 2000A | 1 | 45V | 5mA @ 45V | 600mV @ 150A | |||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N3595UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/241 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-213AA | 2 | 20 Weeks | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 150mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 1nA | 125V | 4A | 3 μs | Standard | 0.15A | 2nA @ 125V | 920mV @ 100mA | -65°C~175°C | |||||||||||||||||||||||||||||||
| JAN1N6640US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/609 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n6640us-datasheets-9012.pdf | SQ-MELF, B | 2 | 10 Weeks | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/609D | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | O-XELF-R2 | 300mA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 4ns | Standard | 0.3A | 100nA @ 50V | 1V @ 300mA | -65°C~175°C | ||||||||||||||||||||||||||||||||
| JANTXV1N6661US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/587 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1999 | /files/microsemicorporation-1n6663us-datasheets-5046.pdf | SQ-MELF, A | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/587 | AXIAL | WIRE | Single | 1 | Qualified | 500mA | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50nA | 225V | 5A | DO-35 | Standard | 50nA @ 225V | 1V @ 400mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| UF4006 TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Cut Tape (CT) | 1 (Unlimited) | 2016 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-uf4005tr-datasheets-1406.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | unknown | 8541.10.00.80 | e0 | TIN LEAD | NO | WIRE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800V | 75ns | Standard | 1A | 10pF @ 4V 1MHz | 800V | 10μA @ 600V | 1.7V @ 1A | 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| DSR8F600 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dsr8f600-datasheets-8899.pdf | TO-220-2 | 2 | EAR99 | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80μA | TO-220AC | 45 ns | Standard | 600V | 8A | 75A | 1 | 8A | 9.3pF @ 40V 1MHz | 600V | 80μA @ 600V | 2.7V @ 8A | 150°C Max | ||||||||||||||||||||||||||||||||||
| 1N5824 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5825-datasheets-6068.pdf | Axial | 2 | 26 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | 8541.10.00.80 | e0 | NO | WIRE | NOT SPECIFIED | 125°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30V | Schottky | 500A | 1 | 5A | 30V | 10mA @ 30V | 370mV @ 5A | 5A | -65°C~125°C | |||||||||||||||||||||||||||||||||||
| MBRH15020L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh15020l-datasheets-2855.pdf | D-67 | 1 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 20V | 150A | 2000A | 1 | 20V | 3mA @ 20V | 580mV @ 150A | |||||||||||||||||||||||||||||||||||||||||||||
| MBRH15040RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh15040rl-datasheets-2856.pdf | D-67 | 1 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky, Reverse Polarity | 40V | 150A | 2000A | 1 | 40V | 5mA @ 40V | 600mV @ 150A | |||||||||||||||||||||||||||||||||||||||||||||
| MBRH20030L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh20030l-datasheets-2857.pdf | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 30V | 200A | 3000A | 1 | 30V | 3mA @ 30V | 580mV @ 200A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| MBRH20020L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh20020l-datasheets-2858.pdf | D-67 | 1 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 20V | 200A | 3000A | 1 | 20V | 3mA @ 20V | 580mV @ 200mA | |||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N914 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/116 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1998 | /files/microsemicorporation-1n914-datasheets-7398.pdf | DO-204AH, DO-35, Axial | 2 | 20 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/116 | WIRE | Single | 1 | Qualified | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 75V | 2A | 5 ns | Standard | 1A | 0.075A | 2.8pF @ 1.5V 1MHz | 500nA @ 75V | 1.2V @ 50mA | 200mA | -65°C~175°C | |||||||||||||||||||||||||||||||
| JANTX1N6642UBCA | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1999 | 3-SMD, No Lead | 3 | 40 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | YES | DUAL | NOT SPECIFIED | 3 | 200°C | NOT SPECIFIED | 2 | Rectifier Diodes | Qualified | R-CDSO-N3 | COMMON ANODE, 2 ELEMENTS | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 20ns | Standard | 2.5A | 0.3A | 75V | 500nA @ 75V | 1.2V @ 100mA | 300mA DC | -65°C~175°C | |||||||||||||||||||||||||||||||||
| JANTX1N3673A | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/260 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AA, DO-4, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 22A | CATHODE | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1000V | 10μA | 1kV | 250A | Standard | 1 | 5μs | 1000V | 5μA @ 800V | 1.35V @ 38A | 12A | -65°C~150°C | |||||||||||||||||||||||||||||||
| SB160-B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sb130t-datasheets-1550.pdf | DO-204AL, DO-41, Axial | 2 | 9 Weeks | no | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Bright Tin (Sn) | WIRE | 260 | 2 | 150°C | 40 | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 60V | 1A | 40A | 1A | 60V | 500μA @ 60V | 700mV @ 1A | -65°C~150°C |
