Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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JANTXV1N914 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/116 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1998 | /files/microsemicorporation-1n914-datasheets-7398.pdf | DO-204AH, DO-35, Axial | 2 | 20 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/116 | WIRE | Single | 1 | Qualified | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 75V | 2A | 5 ns | Standard | 1A | 0.075A | 2.8pF @ 1.5V 1MHz | 500nA @ 75V | 1.2V @ 50mA | 200mA | -65°C~175°C | ||||||||||||||||||||||||||
GP2D012A065C | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d012a065c-datasheets-8640.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 632pF @ 1V 1MHz | 650V | 200μA @ 650V | 1.9V @ 12A | 29A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
JANTXV1N6620U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | no | No | 8541.10.00.80 | MIL | END | WRAP AROUND | 2 | Single | 1 | Rectifier Diodes | O-LELF-R2 | 1.2A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 200V | 20A | 30ns | Standard | 1 | 500nA @ 200V | 1.4V @ 1.2A | -65°C~150°C | ||||||||||||||||||||||||||||||||
RJU4352SDPD-E0#J2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rju4352sdpde0j2-datasheets-8879.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | 8541.10.00.80 | SINGLE | GULL WING | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 25 ns | Standard | 430V | 20A | 80A | 1 | 430V | 1μA @ 430V | 1.8V @ 20A | -55°C~150°C | |||||||||||||||||||||||||||||||||
JANTXV1N6628U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | SQ-MELF, E | 2 | no | 8541.10.00.80 | MIL | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 30ns | Standard | 75A | 1 | 2A | 600V | 2μA @ 600V | 1.35V @ 2A | 1.75A | -65°C~150°C | ||||||||||||||||||||||||||||||
JAN1N6677UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/610 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll6676-datasheets-6366.pdf | DO-213AA (Glass) | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/610E | END | WRAP AROUND | 2 | Single | 1 | Qualified | 200mA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 5μA | 40V | Schottky | 50pF @ 0V 1MHz | 50μA @ 40V | 500mV @ 200mA | -65°C~175°C | |||||||||||||||||||||||||||||
JAN1N6630U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | SQ-MELF, E | 2 | no | EAR99 | 8541.10.00.80 | e0 | TIN LEAD | MIL-19500/590F | YES | END | WRAP AROUND | 1 | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50ns | Standard | 75A | 1 | 3A | 900V | 2μA @ 900V | 1.4V @ 1.4A | 1.4A | -65°C~150°C | |||||||||||||||||||||||||||||||||
JANTX1N5816 | Microsemi Corporation | $261.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MILITARY, MIL-PRF-19500/478 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AA, DO-4, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/478 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 20A | 950mV | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 400A | 35 ns | Standard | 1 | 300pF @ 10V 1MHz | 10μA @ 150V | 950mV @ 20A | -65°C~175°C | |||||||||||||||||||||||||
JANTXV1N6625U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | no | EAR99 | 8541.10.00.80 | MIL | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000V | 60ns | Standard | 15A | 1 | 1.5A | 1000V | 1μA @ 1000V | 1.75V @ 1A | 1A | -65°C~150°C | |||||||||||||||||||||||||||||
JANTXV1N6631 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | E, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | METALLURGICALLY BONDED, HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.4A | 1.95V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.1kV | 60A | 60ns | Standard | 1 | 40pF @ 10V 1MHz | 1100V | 4μA @ 1100V | 1.6V @ 1.4A | -65°C~150°C | |||||||||||||||||||||||||
JANTX1N6642UB | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1999 | 3-SMD, No Lead | 3 | 40 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | YES | DUAL | NOT SPECIFIED | 3 | 200°C | NOT SPECIFIED | 1 | Rectifier Diodes | Qualified | R-CDSO-N3 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 20ns | Standard | 2.5A | 0.3A | 75V | 500nA @ 75V | 1.2V @ 100mA | 300mA DC | -65°C~175°C | ||||||||||||||||||||||||||||
GDP06S060D | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Surface Mount | Tube | 1 (Unlimited) | /files/semiq-gdp06s060d-datasheets-8869.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 243pF @ 1V 1MHz | 600V | 100μA @ 600V | 1.7V @ 6A | 6A | -55°C~135°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTXV1N6626U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | SQ-MELF, E | 2 | no | 8541.10.00.80 | MIL | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 30ns | Standard | 75A | 1 | 2A | 200V | 2μA @ 200V | 1.35V @ 2A | 1.75A | -65°C~150°C | ||||||||||||||||||||||||||||||
RJU3051SDPE-00#J3 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rju3051sdpe00j3-datasheets-8870.pdf | SC-83 | 2 | 16 Weeks | EAR99 | 8541.10.00.80 | SINGLE | GULL WING | 4 | 150°C | 1 | Rectifier Diodes | R-PSSO-G2 | SINGLE | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 25ns | Standard | 360V | 10A | 50A | 1 | 1μA @ 360V | 1.7V @ 10A | 10A DC | -55°C~150°C | ||||||||||||||||||||||||||||||||||
JANTX1N5814 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MILITARY, MIL-PRF-19500/478 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AA, DO-4, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/478 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 20A | 950mV | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 400A | 35 ns | Standard | 1 | 300pF @ 10V 1MHz | 10μA @ 100V | 950mV @ 20A | -65°C~175°C | ||||||||||||||||||||||||||
RJU4351TDPP-EJ#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rju4351tdppejt2-datasheets-8874.pdf | TO-220-2 Full Pack | 2 | 16 Weeks | EAR99 | 8541.10.00.80 | SINGLE | 2 | 150°C | 1 | Rectifier Diodes | R-PSFM-T2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | TO-220AC | 25 ns | Standard | 430V | 10A | 50A | 1 | 430V | 1μA @ 430V | 1.9V @ 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||
JAN1N6631U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | SQ-MELF, E | 2 | no | 8541.10.00.80 | MIL | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000V | 60ns | Standard | 60A | 1 | 1.4A | 1000V | 4μA @ 1000V | 1.6V @ 1.4A | 1.4A | -65°C~150°C | ||||||||||||||||||||||||||||||
JAN1N5816 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MILITARY, MIL-PRF-19500/478 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AA, DO-4, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/478 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 20A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 400A | 35 ns | Standard | 1 | 300pF @ 10V 1MHz | 10μA @ 150V | 950mV @ 20A | -65°C~175°C | |||||||||||||||||||||||||||
VS-15ETH06STRLPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs15eth06strrpbf-datasheets-8022.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 11 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | GULL WING | 3 | Single | 1 | Rectifier Diodes | R-PSSO-G2 | 15A | 2.2V | CATHODE | HYPERFAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 600V | 120A | 29 ns | Standard | 600V | 15A | 1 | 50μA @ 600V | 2.2V @ 15A | -65°C~175°C | ||||||||||||||||||||||||
JANTX1N6630US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6628us-datasheets-2277.pdf | SQ-MELF, E | Contains Lead | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590F | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.4A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 990V | 50ns | Standard | 1 | 3A | 900V | 2μA @ 900V | 1.4V @ 1.4A | -65°C~150°C | |||||||||||||||||||||||
JANTX1N6629U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | SQ-MELF, E | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | MIL | END | WRAP AROUND | 2 | Single | 1 | Rectifier Diodes | 4A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 800V | 75A | 50ns | Standard | 1 | 2μA @ 800V | 1.4V @ 1.4A | 1.4A | -65°C~150°C | ||||||||||||||||||||||||||||||
JAN1N5552US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, B | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | No | 8541.10.00.80 | MIL-19500/420G | END | WRAP AROUND | 2 | Single | 1 | Qualified | O-LELF-R2 | 5A | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 100A | 2 μs | Standard | 1 | 3A | 1μA @ 600V | 1.2V @ 9A | 3A | -65°C~175°C | ||||||||||||||||||||||||||||
GDP30P120B | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | TO-247-2 | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1790pF @ 1V 1MHz | 1200V | 100μA @ 1200V | 1.7V @ 30A | 81A | -55°C~135°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
JANS1N6761UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/586 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5819-datasheets-8782.pdf | DO-213AB, MELF (Glass) | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | Single | DO-213AB (MELF, LL41) | 1A | 690mV | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 100V | Schottky | 70pF @ 5V 1MHz | 100V | 100μA @ 100V | 380mV @ 100mA | 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||
JANTX1N6630U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | SQ-MELF, E | 2 | 2 | no | EAR99 | No | 8541.10.00.80 | e0 | TIN LEAD | MIL | END | WRAP AROUND | 2 | Single | 4A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 900V | 75A | 60 ns | Standard | 1 | 3A | 2μA @ 900V | 1.4V @ 1.4A | 1.4A | -65°C~150°C | |||||||||||||||||||||||||||||
JANTX1N6081 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/503 | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | Contains Lead | 12 Weeks | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | Standard | 150V | 5μA @ 150V | 1.5V @ 37.7A | 2A | -65°C~155°C | |||||||||||||||||||||||||||||||||||||||||||||||||
JANTXV1N6624U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | 2 | no | EAR99 | No | 8541.10.00.80 | MIL | END | WRAP AROUND | 2 | Single | 1 | Rectifier Diodes | 1A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 900V | 500nA | 990V | 20A | 50ns | Standard | 1 | 1.5A | 900V | 500nA @ 900V | 1.55V @ 1A | -65°C~150°C | ||||||||||||||||||||||||||||
JANTX1N6623U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | 2 | no | EAR99 | Lead, Tin | 8541.10.00.80 | MIL | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 880V | 50ns | Standard | 1 | 1.5A | 800V | 500nA @ 800V | 1.55V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||
JAN1N6628U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | SQ-MELF, E | 2 | no | 8541.10.00.80 | MIL | YES | END | WRAP AROUND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 30ns | Standard | 75A | 1 | 2A | 600V | 2μA @ 600V | 1.35V @ 2A | 1.75A | -65°C~150°C | |||||||||||||||||||||||||||||||
JAN1N5550US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, B | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | 235 | Single | 20 | 1 | Rectifier Diodes | Qualified | 5A | 1.2V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 200V | 100A | 2 μs | Standard | 1 | 3A | 1μA @ 200V | 1.2V @ 9A | 3A | -65°C~175°C |
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