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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| JANTXV1N6624U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | 2 | no | EAR99 | No | 8541.10.00.80 | MIL | END | WRAP AROUND | 2 | Single | 1 | Rectifier Diodes | 1A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 900V | 500nA | 990V | 20A | 50ns | Standard | 1 | 1.5A | 900V | 500nA @ 900V | 1.55V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||
| JANTX1N6623U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | 2 | no | EAR99 | Lead, Tin | 8541.10.00.80 | MIL | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 880V | 50ns | Standard | 1 | 1.5A | 800V | 500nA @ 800V | 1.55V @ 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||
| JAN1N6628U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | SQ-MELF, E | 2 | no | 8541.10.00.80 | MIL | YES | END | WRAP AROUND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 30ns | Standard | 75A | 1 | 2A | 600V | 2μA @ 600V | 1.35V @ 2A | 1.75A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| JAN1N5550US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, B | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | 235 | Single | 20 | 1 | Rectifier Diodes | Qualified | 5A | 1.2V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 200V | 100A | 2 μs | Standard | 1 | 3A | 1μA @ 200V | 1.2V @ 9A | 3A | -65°C~175°C | |||||||||||||||||||||||
| JAN1N6073 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/503 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 155°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED, HIGH RELIABILITY | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/503 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 3A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 30ns | Standard | 1 | 3A | 1μA @ 50V | 2.04V @ 9.4A | 850mA | -65°C~155°C | ||||||||||||||||||||||||||||||
| JANTXV1N4148UB2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/116 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1999 | 3-SMD, No Lead | 3 | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/116L | YES | DUAL | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Qualified | R-CDSO-N3 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20ns | Standard | 0.2A | 4pF @ 0V 1MHz | 75V | 500nA @ 75V | 1.2V @ 100mA | 200mA | -65°C~200°C | ||||||||||||||||||||||||||||||||||||
| JAN1N6624U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | no | EAR99 | 8541.10.00.80 | MIL | YES | END | WRAP AROUND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 900V | 30ns | Standard | 20A | 1A | 900V | 500nA @ 900V | 1.55V @ 1A | 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||
| JANTX1N1616 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/162 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n4459r-datasheets-0398.pdf | DO-203AA, DO-4, Stud | Contains Lead | 1 | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 15A | 1.5V | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50μA | 600V | 100A | Standard | 1 | 50μA @ 600V | 1.5V @ 15A | -65°C~175°C | |||||||||||||||||||||||||||||||
| JANTXV1N5554US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, B | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 235 | 2 | Single | 20 | 1 | Qualified | 5A | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 100A | 2 μs | Standard | 1 | 3A | 1000V | 1μA @ 1000V | 1.3V @ 9A | 3A | -65°C~175°C | |||||||||||||||||||||||||||
| JANTXV1N6621U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | 2 | no | Lead, Tin | 8541.10.00.80 | MIL | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.2A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 440V | 30ns | Standard | 1 | 400V | 500nA @ 400V | 1.4V @ 1.2A | -65°C~150°C | ||||||||||||||||||||||||||||||||
| JAN1N6621U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | no | 8541.10.00.80 | MIL | YES | END | WRAP AROUND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 30ns | Standard | 20A | 1 | 1.2A | 400V | 500nA @ 400V | 1.4V @ 1.2A | 1.2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| JANS1N6661 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/587 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n6663-datasheets-8482.pdf | DO-204AH, DO-35, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/587 | WIRE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Qualified | 1V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50nA | 225V | 500mA | Standard | 0.5A | 50nA @ 225V | 1V @ 400mA | 500mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| JAN1N3647 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/279 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n3644-datasheets-6252.pdf | S, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 3kV | 14A | Standard | 3000V | 5μA @ 1500V | 5V @ 250mA | 250mA | -65°C~150°C | ||||||||||||||||||||||||||||||||
| CMSH2-40L TR13 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmsh220ltr13pbfree-datasheets-3072.pdf | DO-214AA, SMB | 2 | yes | EAR99 | HIGH RELIABILITY | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 2 | 150°C | 10 | 1 | Rectifier Diodes | Not Qualified | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40V | Schottky | 50A | 1 | 2A | 150pF @ 4V 1MHz | 40V | 500μA @ 40V | 400mV @ 2A | 2A | -65°C~150°C | |||||||||||||||||||||||||||||||
| JAN1N6622U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | no | EAR99 | 8541.10.00.80 | MIL | YES | END | WRAP AROUND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 30ns | Standard | 20A | 1 | 1.2A | 600V | 500nA @ 600V | 1.4V @ 1.2A | 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||||
| JANTXV1N6081 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/503 | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | G, Axial | 2 | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | METALLURGICALLY BONDED, HIGH RELIABILITY | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/503 | NO | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Qualified | O-LALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30ns | Standard | 175A | 1 | 12A | 150V | 1μA @ 150V | 1.5V @ 37.7A | 2A | -65°C~155°C | |||||||||||||||||||||||||||||||
| JAN1N3644 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/279 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n3644-datasheets-6252.pdf | S, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | METALLURGICALLY BONDED, HIGH RELIABILITY | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1.5kV | 14A | Standard | 1500V | 5μA @ 1500V | 5V @ 250mA | 250mA | -65°C~175°C | ||||||||||||||||||||||||||||||||
| JANTXV1N6622U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | 2 | no | No | 8541.10.00.80 | e0 | TIN LEAD | MIL | END | WRAP AROUND | 2 | Single | 1.2A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 660V | 20A | 45 ns | Standard | 1 | 2A | 600V | 500nA @ 600V | 1.4V @ 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||||
| JANTX1N6620U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | 2 | no | EAR99 | Lead, Tin | 8541.10.00.80 | MIL | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 2A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 220V | 30ns | Standard | 1 | 200V | 500nA @ 200V | 1.4V @ 1.2A | 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||
| JAN1N6623U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | no | EAR99 | 8541.10.00.80 | MIL | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800V | 30ns | Standard | 20A | 1A | 800V | 500nA @ 800V | 1.55V @ 1A | 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| JAN1N3768 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/297 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AB, DO-5, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn63Pb37) | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 35A | 1.4V | CATHODE | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1000V | 10μA | 1kV | 500A | Standard | 1 | 5μs | 1000V | 10μA @ 1000V | 1.4V @ 110A | -65°C~175°C | ||||||||||||||||||||||||||||
| GP2D010A120B | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d010a120b-datasheets-8821.pdf | TO-247-2 | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 635pF @ 1V 1MHz | 1200V | 20μA @ 1200V | 1.8V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMHD4150 TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmhd4150tr-datasheets-8823.pdf | SOD-123 | 2 | 10 Weeks | yes | EAR99 | compliant | 8541.10.00.70 | e3 | MATTE TIN | YES | DUAL | GULL WING | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-G2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.4W | 50V | 4ns | Standard | 4A | 0.25A | 4pF @ 0V 1MHz | 50V | 100nA @ 50V | 1V @ 200mA | 250mA | -65°C~150°C | |||||||||||||||||||||||||||||||
| JAN1N3600 | Microsemi Corporation | $5.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/231 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n3600-datasheets-4574.pdf | DO-204AA, DO-7, Axial | Contains Lead | 2 | 10 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn63Pb37) | WIRE | 2 | Single | 1 | Qualified | 300mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 100nA | 50V | 4A | 4 ns | Standard | 100nA @ 50V | 1V @ 200mA | 200mA DC | -65°C~175°C | |||||||||||||||||||||||||||
| JANTX1N6661US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/587 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6663us-datasheets-5046.pdf | SQ-MELF, A | 2 | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/587 | AXIAL | WIRE | Single | 1 | Qualified | 500mA | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50nA | 225V | 5A | DO-35 | Standard | 50nA @ 225V | 1V @ 400mA | -65°C~175°C | |||||||||||||||||||||||||||||||||
| SBRT15M50AP5-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchSBR | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-sbrt15m50ap57-datasheets-8584.pdf | PowerDI™ 5 | 3 | 5 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 150μA | Super Barrier | 50V | 15A | 290A | 1 | 50V | 150μA @ 50V | 540mV @ 15A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| JANTXV1N5187 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/424 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5186-datasheets-4010.pdf | B, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | No | 8541.10.00.80 | WIRE | 2 | Single | 1 | Qualified | 3A | ISOLATED | FAST RECOVERY POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2μA | 200V | 80A | 200 ns | Standard | 1 | 3A | 100V | 2μA @ 100V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| UH6PJHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh6pjm387a-datasheets-3254.pdf | TO-277, 3-PowerDFN | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | Standard | 600V | 6A | 30pF @ 4V 1MHz | 600V | 10μA @ 600V | 3V @ 6A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| NSR05F30QNXT5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2013 | /files/onsemiconductor-nsr05f30qnxt5g-datasheets-8792.pdf | 2-XDFN | 15 Weeks | 2 | EAR99 | No | Single | 1 | Rectifier Diodes | Fast Recovery =< 500ns, > 200mA (Io) | 30V | 10A | Schottky | 30V | 500mA | 0.5A | 75μA @ 30V | 430mV @ 500mA | 500mA DC | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||
| CMPD4150 TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmpd4150tr-datasheets-8763.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 8 Weeks | yes | EAR99 | compliant | 8541.10.00.70 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 150°C | 10 | 1 | Not Qualified | R-PDSO-G3 | SINGLE | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.35W | 50V | 0.1μA | 4ns | Standard | 4A | 0.25A | 4pF @ 0V 1MHz | 50V | 100nA @ 50V | 1V @ 200mA | 250mA | -65°C~150°C |
