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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| JANTX1N6630US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6628us-datasheets-2277.pdf | SQ-MELF, E | Contains Lead | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590F | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.4A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 990V | 50ns | Standard | 1 | 3A | 900V | 2μA @ 900V | 1.4V @ 1.4A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| JANTX1N6629U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | SQ-MELF, E | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | MIL | END | WRAP AROUND | 2 | Single | 1 | Rectifier Diodes | 4A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 800V | 75A | 50ns | Standard | 1 | 2μA @ 800V | 1.4V @ 1.4A | 1.4A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| JAN1N5552US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, B | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | No | 8541.10.00.80 | MIL-19500/420G | END | WRAP AROUND | 2 | Single | 1 | Qualified | O-LELF-R2 | 5A | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 100A | 2 μs | Standard | 1 | 3A | 1μA @ 600V | 1.2V @ 9A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| GDP30P120B | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | TO-247-2 | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1790pF @ 1V 1MHz | 1200V | 100μA @ 1200V | 1.7V @ 30A | 81A | -55°C~135°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMSH2-40L TR13 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmsh220ltr13pbfree-datasheets-3072.pdf | DO-214AA, SMB | 2 | yes | EAR99 | HIGH RELIABILITY | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 2 | 150°C | 10 | 1 | Rectifier Diodes | Not Qualified | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40V | Schottky | 50A | 1 | 2A | 150pF @ 4V 1MHz | 40V | 500μA @ 40V | 400mV @ 2A | 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
| JAN1N6622U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | no | EAR99 | 8541.10.00.80 | MIL | YES | END | WRAP AROUND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 30ns | Standard | 20A | 1 | 1.2A | 600V | 500nA @ 600V | 1.4V @ 1.2A | 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6081 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/503 | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | G, Axial | 2 | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | METALLURGICALLY BONDED, HIGH RELIABILITY | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/503 | NO | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Qualified | O-LALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30ns | Standard | 175A | 1 | 12A | 150V | 1μA @ 150V | 1.5V @ 37.7A | 2A | -65°C~155°C | |||||||||||||||||||||||||||||||||||||||
| JAN1N3644 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/279 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n3644-datasheets-6252.pdf | S, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | METALLURGICALLY BONDED, HIGH RELIABILITY | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1.5kV | 14A | Standard | 1500V | 5μA @ 1500V | 5V @ 250mA | 250mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6622U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | 2 | no | No | 8541.10.00.80 | e0 | TIN LEAD | MIL | END | WRAP AROUND | 2 | Single | 1.2A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 660V | 20A | 45 ns | Standard | 1 | 2A | 600V | 500nA @ 600V | 1.4V @ 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| JANTX1N6620U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | 2 | no | EAR99 | Lead, Tin | 8541.10.00.80 | MIL | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 2A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 220V | 30ns | Standard | 1 | 200V | 500nA @ 200V | 1.4V @ 1.2A | 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
| JAN1N6623U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | no | EAR99 | 8541.10.00.80 | MIL | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800V | 30ns | Standard | 20A | 1A | 800V | 500nA @ 800V | 1.55V @ 1A | 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| JAN1N6073 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/503 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 155°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED, HIGH RELIABILITY | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/503 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 3A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 30ns | Standard | 1 | 3A | 1μA @ 50V | 2.04V @ 9.4A | 850mA | -65°C~155°C | ||||||||||||||||||||||||||||||||||||||
| JANTXV1N4148UB2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/116 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1999 | 3-SMD, No Lead | 3 | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/116L | YES | DUAL | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Qualified | R-CDSO-N3 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20ns | Standard | 0.2A | 4pF @ 0V 1MHz | 75V | 500nA @ 75V | 1.2V @ 100mA | 200mA | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6624U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | no | EAR99 | 8541.10.00.80 | MIL | YES | END | WRAP AROUND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 900V | 30ns | Standard | 20A | 1A | 900V | 500nA @ 900V | 1.55V @ 1A | 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| JANTX1N1616 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/162 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n4459r-datasheets-0398.pdf | DO-203AA, DO-4, Stud | Contains Lead | 1 | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 15A | 1.5V | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50μA | 600V | 100A | Standard | 1 | 50μA @ 600V | 1.5V @ 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| JANTXV1N5554US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, B | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 235 | 2 | Single | 20 | 1 | Qualified | 5A | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 100A | 2 μs | Standard | 1 | 3A | 1000V | 1μA @ 1000V | 1.3V @ 9A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| JANTXV1N6621U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | 2 | no | Lead, Tin | 8541.10.00.80 | MIL | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.2A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 440V | 30ns | Standard | 1 | 400V | 500nA @ 400V | 1.4V @ 1.2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| JAN1N6621U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | no | 8541.10.00.80 | MIL | YES | END | WRAP AROUND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 30ns | Standard | 20A | 1 | 1.2A | 400V | 500nA @ 400V | 1.4V @ 1.2A | 1.2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| JANS1N6661 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/587 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n6663-datasheets-8482.pdf | DO-204AH, DO-35, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/587 | WIRE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Qualified | 1V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50nA | 225V | 500mA | Standard | 0.5A | 50nA @ 225V | 1V @ 400mA | 500mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| JAN1N3647 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/279 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n3644-datasheets-6252.pdf | S, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 3kV | 14A | Standard | 3000V | 5μA @ 1500V | 5V @ 250mA | 250mA | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| CMPD4150 TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmpd4150tr-datasheets-8763.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 8 Weeks | yes | EAR99 | compliant | 8541.10.00.70 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 150°C | 10 | 1 | Not Qualified | R-PDSO-G3 | SINGLE | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.35W | 50V | 0.1μA | 4ns | Standard | 4A | 0.25A | 4pF @ 0V 1MHz | 50V | 100nA @ 50V | 1V @ 200mA | 250mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
| JAN1N1202AR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/260 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -55°C | Non-RoHS Compliant | 1997 | DO-203AA, DO-4, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 12A | 1.2V | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 250A | Standard, Reverse Polarity | 1 | 5μA @ 200V | 1.35V @ 38A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| STTH15S12W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stth15s12d-datasheets-0199.pdf | DO-247-2 (Straight Leads) | 2 | EAR99 | SINGLE | NOT SPECIFIED | STTH15S | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 40 ns | Standard | 1.2kV | 15A | 130A | 1 | 1200V | 10μA @ 1200V | 3.1V @ 15A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-8EWF12SPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2006 | /files/vishaysemiconductordiodesdivision-vs8ewf10strlpbf-datasheets-1344.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Unknown | 2 | EAR99 | No | 8541.10.00.80 | Common Anode | 1 | Rectifier Diodes | 8A | 2.5V | 200A | Fast Recovery =< 500ns, > 200mA (Io) | 170A | 100μA | 1.2kV | 200A | 1.2kV | 270 ns | 270 ns | Standard | 1.2kV | 8A | 8A | 1200V | 100μA @ 1200V | 1.3V @ 8A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||
| DSM10G-TR-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-dsm10gtre-datasheets-8759.pdf | 2-SMD, J-Lead | Lead Free | 2 | 2 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | C BEND | 2 | Single | 1 | Rectifier Diodes | 1A | 1.1V | 25A | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 600V | 25A | 600V | Standard | 600V | 1A | 0.75A | 10μA @ 600V | 1.1V @ 1A | 150°C Max | ||||||||||||||||||||||||||||||||||||||
| JANTXV1N4148UB | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/116 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemi-jantxv1n4148ub-datasheets-2841.pdf | 3-SMD, No Lead | Contains Lead | 3 | 40 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/116L | YES | DUAL | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Qualified | R-CDSO-N3 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20ns | Standard | 0.2A | 4pF @ 0V 1MHz | 75V | 500nA @ 75V | 1.2V @ 100mA | 200mA | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6845U3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/682 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | 3-SMD, No Lead | 3 | 3 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | LOW POWER LOSS, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | MIL-19500/682 | BOTTOM | 3 | 1 | Qualified | 30A | SINGLE | CATHODE | LOW POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 45V | 400A | Schottky | 1 | 800pF @ 5V 1MHz | 100μA @ 45V | 860mV @ 40A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| JAN1N3768 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/297 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AB, DO-5, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn63Pb37) | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 35A | 1.4V | CATHODE | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1000V | 10μA | 1kV | 500A | Standard | 1 | 5μs | 1000V | 10μA @ 1000V | 1.4V @ 110A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| GP2D010A120B | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d010a120b-datasheets-8821.pdf | TO-247-2 | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 635pF @ 1V 1MHz | 1200V | 20μA @ 1200V | 1.8V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMHD4150 TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmhd4150tr-datasheets-8823.pdf | SOD-123 | 2 | 10 Weeks | yes | EAR99 | compliant | 8541.10.00.70 | e3 | MATTE TIN | YES | DUAL | GULL WING | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-G2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.4W | 50V | 4ns | Standard | 4A | 0.25A | 4pF @ 0V 1MHz | 50V | 100nA @ 50V | 1V @ 200mA | 250mA | -65°C~150°C |
