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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-8EWF12SPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2006 | /files/vishaysemiconductordiodesdivision-vs8ewf10strlpbf-datasheets-1344.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Unknown | 2 | EAR99 | No | 8541.10.00.80 | Common Anode | 1 | Rectifier Diodes | 8A | 2.5V | 200A | Fast Recovery =< 500ns, > 200mA (Io) | 170A | 100μA | 1.2kV | 200A | 1.2kV | 270 ns | 270 ns | Standard | 1.2kV | 8A | 8A | 1200V | 100μA @ 1200V | 1.3V @ 8A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||
| DSM10G-TR-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-dsm10gtre-datasheets-8759.pdf | 2-SMD, J-Lead | Lead Free | 2 | 2 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | C BEND | 2 | Single | 1 | Rectifier Diodes | 1A | 1.1V | 25A | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 600V | 25A | 600V | Standard | 600V | 1A | 0.75A | 10μA @ 600V | 1.1V @ 1A | 150°C Max | ||||||||||||||||||||||||||||||||||||
| JANTXV1N4148UB | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/116 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemi-jantxv1n4148ub-datasheets-2841.pdf | 3-SMD, No Lead | Contains Lead | 3 | 40 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/116L | YES | DUAL | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Qualified | R-CDSO-N3 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20ns | Standard | 0.2A | 4pF @ 0V 1MHz | 75V | 500nA @ 75V | 1.2V @ 100mA | 200mA | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||
| JANTXV1N6845U3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/682 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | 3-SMD, No Lead | 3 | 3 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | LOW POWER LOSS, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | MIL-19500/682 | BOTTOM | 3 | 1 | Qualified | 30A | SINGLE | CATHODE | LOW POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 45V | 400A | Schottky | 1 | 800pF @ 5V 1MHz | 100μA @ 45V | 860mV @ 40A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| JAN1N3768 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/297 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AB, DO-5, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn63Pb37) | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 35A | 1.4V | CATHODE | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1000V | 10μA | 1kV | 500A | Standard | 1 | 5μs | 1000V | 10μA @ 1000V | 1.4V @ 110A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| GP2D010A120B | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d010a120b-datasheets-8821.pdf | TO-247-2 | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 635pF @ 1V 1MHz | 1200V | 20μA @ 1200V | 1.8V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NRVTSM260ET3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nrvtsm260et3g-datasheets-8780.pdf | DO-216AA | Lead Free | 1 | 7 Weeks | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | 175°C | 1 | Rectifier Diodes | R-PSSO-G1 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 12μA | Schottky | 60V | 2A | 50A | 1 | 2A | 60V | 12μA @ 60V | 650mV @ 2A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| JAN1N1615 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/162 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n4459r-datasheets-0398.pdf | DO-203AA, DO-4, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 15A | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50μA | 400V | 100A | Standard | 1 | 5μs | 50μA @ 400V | 1.5V @ 15A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||
| JANTX1N1184R | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/297 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AB, DO-5, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 35A | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 500A | Standard | 1 | 10μA @ 100V | 1.4V @ 110A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| 1N4448 TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Cut Tape (CT) | 1 (Unlimited) | Non-RoHS Compliant | 2016 | /files/centralsemiconductorcorp-1n4448tr-datasheets-8785.pdf | DO-204AH, DO-35, Axial | 2 | no | EAR99 | compliant | 8541.10.00.70 | e0 | TIN LEAD | NO | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 100V | 4ns | Standard | 0.15A | 4pF @ 0V 1MHz | 100V | 25nA @ 20V | 720mV @ 5mA | 150mA | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||
| NSR20F30QNXT5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2013 | /files/onsemiconductor-nsr20f30qnxt5g-datasheets-8740.pdf | 2-XDFN | 2 | 16 Weeks | 2 | LOW LEAKAGE CURRENT | No | BOTTOM | Single | 1 | Rectifier Diodes | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.56W | 30V | 28A | 150μA | Schottky | 30V | 2A | 1 | 2A | 150μA @ 30V | 480mV @ 2A | 2A DC | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||
| JANTX1N1188R | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/297 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AB, DO-5, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 35A | 1.4V | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 500A | Standard | 1 | 10μA @ 400V | 1.4V @ 110A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| VS-10TQ040-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-10tq040-datasheets-7495.pdf | TO-220-2 | 10.67mm | 9.02mm | 4.83mm | 2 | 11 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 15A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 810A | 2mA | 40V | Schottky | 40V | 10A | 1 | 900pF @ 5V 1MHz | 2mA @ 40V | 570mV @ 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| JANTXV1N6391 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/553 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | DO-203AA, DO-4, Stud | 1 | 2 | no | EAR99 | REVERSE ENERGY TESTED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/553 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 25A | 680mV | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.5mA | 45V | 600A | Schottky | 1 | 2000pF @ 5V 1MHz | 1.5mA @ 45V | 680mV @ 50A | 22.5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| 1N34A BK | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-1n34abk-datasheets-8748.pdf | DO-204AA, DO-7, Axial | 2 | yes | EAR99 | 8541.10.00.70 | e3 | MATTE TIN (315) | NO | WIRE | 260 | 10 | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | GERMANIUM | 75V | Standard | 0.05A | 75V | 500μA @ 50V | 1V @ 5mA | 50mA | -55°C~75°C | |||||||||||||||||||||||||||||||||||||||||||||
| GP2D005A120A | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d005a120a-datasheets-8750.pdf | TO-220-2 | TO-220-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 317pF @ 1V 1MHz | 1200V | 10μA @ 1200V | 1.8V @ 5A | 5A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NSR10F30QNXT5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2013 | /files/onsemiconductor-nsr10f30qnxt5g-datasheets-8752.pdf | 2-XDFN | 16 Weeks | 2 | EAR99 | No | Single | 1 | Rectifier Diodes | Fast Recovery =< 500ns, > 200mA (Io) | 30V | 18A | Schottky | 30V | 1A | 1A | 100μA @ 30V | 470mV @ 1A | 1A DC | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6392 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/554 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n6392-datasheets-9855.pdf | DO-203AB, DO-5, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | REVERSE ENERGY TESTED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/554 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 60A | 820mV | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2mA | 45V | 1kA | Schottky | 1 | 3000pF @ 5V 1MHz | 2mA @ 45V | 680mV @ 60A | 54A | -55°C~175°C | ||||||||||||||||||||||||||||||||
| 1N4004 TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Cut Tape (CT) | 1 (Unlimited) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-1n4007tr-datasheets-9053.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | HIGH RELIABILITY | not_compliant | 8541.10.00.80 | e0 | TIN LEAD | NO | WIRE | 2 | 175°C | 1 | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | Standard | 1A | 400V | 5μA @ 400V | 1.1V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| GP2D015A120B | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/semiq-gp2d015a120b-datasheets-8758.pdf | TO-247-2 | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 54pF @ 1200V 1MHz | 1200V | 30μA @ 1200V | 1.8V @ 15A | 15A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NSR05F40QNXT5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2010 | /files/onsemiconductor-nsr05f40qnxt5g-datasheets-8761.pdf | 2-XDFN | 9 Weeks | 2 | No | Single | 1 | Rectifier Diodes | Fast Recovery =< 500ns, > 200mA (Io) | 40V | 10A | Schottky | 40V | 500mA | 0.5A | 75μA @ 40V | 460mV @ 500mA | 500mA DC | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NSR10F40QNXT5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nsr10f40qnxt5g-datasheets-8770.pdf | 2-XDFN | 16 Weeks | 2 | No | Single | 1 | Rectifier Diodes | 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100nA | 40V | 18A | Schottky | 40V | 1A | 1A | 100μA @ 40V | 490mV @ 1A | 1A DC | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||
| SBRT25M50SLP-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbrt25m50slp13-datasheets-8778.pdf | 8-PowerTDFN | 6.15mm | 1.1mm | 5.15mm | Lead Free | 5 | 6 Weeks | 8 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | R-PDSO-F5 | 25A | 550mV | CATHODE | EFFICIENCY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 220A | 40μA | 50V | Super Barrier | 50V | 25A | 1 | 120μA @ 50V | 550mV @ 25A | -55°C~150°C | ||||||||||||||||||||||||||||||
| JAN1N6845U3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/682 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | 3-SMD, No Lead | 3 | 3 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | LOW POWER LOSS, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | MIL-19500/682 | BOTTOM | 3 | 1 | Qualified | 30A | SINGLE | CATHODE | LOW POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 45V | 400A | Schottky | 1 | 800pF @ 5V 1MHz | 100μA @ 45V | 860mV @ 40A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| GP2D012A060A | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d012a060a-datasheets-8690.pdf | TO-220-2 | TO-220-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 632pF @ 1V 1MHz | 600V | 40μA @ 600V | 1.65V @ 12A | 12A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UH6PJHM3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh6pjm387a-datasheets-3254.pdf | TO-277, 3-PowerDFN | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | Standard | 600V | 6A | 30pF @ 4V 1MHz | 600V | 10μA @ 600V | 3V @ 6A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GDP30S120B | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/semiq-gdp30s120b-datasheets-8691.pdf | TO-247-2 | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1790pF @ 1V 1MHz | 1200V | 100μA @ 1200V | 1.7V @ 30A | 30A DC | -55°C~135°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYC5X-600PQ | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | TO-220-2 Full Pack, Isolated Tab | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 600V | 10μA @ 600V | 3.3V @ 5A | 5A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N459 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/193 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n458a-datasheets-1107.pdf | DO-204AH, DO-35, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/193D | WIRE | 2 | Single | 1 | Qualified | 120mA | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 200V | 1A | Standard | 0.04A | 1μA @ 200V | 1V @ 100mA | 150mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
| JANS1N5816 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MILITARY, MIL-PRF-19500/478 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AA, DO-4, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/478 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 20A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 400A | 35 ns | Schottky | 1 | 300pF @ 10V 1MHz | 10μA @ 150V | 950mV @ 20A | -65°C~175°C |
