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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTXV1N6392 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/554 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n6392-datasheets-9855.pdf | DO-203AB, DO-5, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | REVERSE ENERGY TESTED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/554 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 60A | 820mV | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2mA | 45V | 1kA | Schottky | 1 | 3000pF @ 5V 1MHz | 2mA @ 45V | 510mV @ 10A | 54A | -55°C~175°C | |||||||||||||||||||||||||||
| BYC8B-600PJ | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Fast Recovery =< 500ns, > 200mA (Io) | 18ns | Standard | 600V | 20μA @ 600V | 3.4V @ 8A | 8A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GDP03S060C | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Surface Mount | Tube | 1 (Unlimited) | /files/semiq-gdp03s060c-datasheets-8706.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 122pF @ 1V 1MHz | 600V | 100μA @ 600V | 1.7V @ 3A | 3A DC | -55°C~135°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYC5-600PQ | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | TO-220-2 | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 600V | 10μA @ 600V | 3.3V @ 5A | 5A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR3100VPTR-G1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr3100vpe1-datasheets-6645.pdf | DO-201AA, DO-27, Axial | 2 | 5 Weeks | EAR99 | LOW NOISE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | HIGH VOLTAGE POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 100V | 3A | 80A | 1 | 3A | 100V | 500μA @ 100V | 850mV @ 3A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| BAV45 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-bav45-datasheets-8714.pdf | TO-18-2 | 2 | no | EAR99 | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | NOT SPECIFIED | 125°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-MBCY-W2 | SINGLE | Small Signal =< 200mA (Io), Any Speed | SILICON | 600 ns | Standard | 20V | 50mA | 0.05A | 1.3pF @ 0V 1MHz | 20V | 5pA @ 5V | 1V @ 10mA | -65°C~125°C | ||||||||||||||||||||||||||||||||||||
| JANTX1N5812 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MILITARY, MIL-PRF-19500/478 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AA, DO-4, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/478 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 20A | 950mV | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50V | 400A | 35 ns | Standard | 1 | 300pF @ 10V 1MHz | 10μA @ 50V | 950mV @ 20A | -65°C~175°C | |||||||||||||||||||||||||||||||
| BYV10EX-600PQ | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | TO-220-2 Full Pack, Isolated Tab | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 600V | 10μA @ 600V | 2V @ 10A | 10A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPD76X-1N5817-CT | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tray | 1 (Unlimited) | ROHS3 Compliant | Die | 8 Weeks | Die | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 20V | 1A | 20V | 1mA @ 20V | 450mV @ 1A | 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6845U3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/682 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | 3-SMD, No Lead | 3 | 3 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | LOW POWER LOSS, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | MIL-19500/682 | BOTTOM | 3 | 1 | Qualified | 30A | SINGLE | CATHODE | LOW POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 45V | 400A | Schottky | 1 | 800pF @ 5V 1MHz | 100μA @ 45V | 860mV @ 40A | -65°C~150°C | |||||||||||||||||||||||||||||||||||
| GP2D012A060A | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d012a060a-datasheets-8690.pdf | TO-220-2 | TO-220-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 632pF @ 1V 1MHz | 600V | 40μA @ 600V | 1.65V @ 12A | 12A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UH6PJHM3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh6pjm387a-datasheets-3254.pdf | TO-277, 3-PowerDFN | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | Standard | 600V | 6A | 30pF @ 4V 1MHz | 600V | 10μA @ 600V | 3V @ 6A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N3291 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/246 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemi-jantx1n3291-datasheets-2807.pdf | DO-205AA, DO-8, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | UPPER | HIGH CURRENT CABLE | 1 | Single | 1 | Qualified | O-MUPM-H1 | 100A | 1.55V | CATHODE | POWER | Small Signal =< 200mA (Io), Any Speed | SILICON | 10mA | 400V | 1.6kA | Standard | 1 | 10mA @ 400V | 1.55V @ 310A | -65°C~200°C | |||||||||||||||||||||||||||||||
| GDP08S120A | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/semiq-gdp08s120a-datasheets-8664.pdf | TO-220-2 | TO-220-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 477pF @ 1V 1MHz | 1200V | 100μA @ 1200V | 1.7V @ 8A | 8A | -55°C~135°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-HFA15TB60-1PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-vshfa15tb60strlp-datasheets-1316.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | 3 | 13 Weeks | 3 | EAR99 | No | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | 260 | 3 | Single | 10 | 1 | 15A | 150A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 150A | 600V | 60 ns | 60 ns | Standard | 600V | 15A | 1 | 10μA @ 600V | 1.7V @ 15A | -55°C~150°C | |||||||||||||||||||||||||||
| VS-6TQ045-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs6tq035pbf-datasheets-8213.pdf | TO-220-2 | 10.66mm | 9.02mm | 4.82mm | 2 | 11 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 6A | 730mV | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 690A | 800μA | 45V | 690A | Schottky | 45V | 6A | 1 | 400pF @ 5V 1MHz | 800μA @ 45V | 600mV @ 6A | -55°C~175°C | |||||||||||||||||||||||||||||||
| VS-8TQ100GSPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8tq100pbf-datasheets-9643.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | EAR99 | unknown | 8541.10.00.80 | 3 | Common Cathode | 880mV | 850A | 550μA | Fast Recovery =< 500ns, > 200mA (Io) | 850A | Schottky | 100V | 8A | 500pF @ 5V 1MHz | 280μA @ 100V | 720mV @ 8A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-8EWF04SPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8ewf04strrpbf-datasheets-1350.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | Common Anode | TO-252, (D-Pak) | 8A | 1.2V | 200A | Standard Recovery >500ns, > 200mA (Io) | 100μA | 400V | 200A | 400V | 140 ns | 140 ns | Standard | 400V | 8A | 400V | 100μA @ 400V | 1.2V @ 8A | 8A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| VS-6TQ040SPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs6tq035spbf-datasheets-9566.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 11 Weeks | 3 | yes | EAR99 | FREEWHEELING DIODE, HIGH RELIABILITY | Tin | e3 | GULL WING | 260 | 3 | Single | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 6A | 690A | 800μA | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800μA | 40V | 690A | Schottky | 40V | 6A | 1 | 6A | 400pF @ 5V 1MHz | 800μA @ 40V | 600mV @ 6A | -55°C~175°C | |||||||||||||||||||||||||
| GP2D010A170B | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | TO-247-2 | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 812pF @ 1V 1MHz | 1700V | 20μA @ 1700V | 1.75V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-10ETF12SPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs10etf10spbf-datasheets-8277.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | Tin | 8541.10.00.80 | e3 | SINGLE | GULL WING | 260 | 3 | Common Anode | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 10A | 1.33V | 160A | CATHODE | FAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 1.2kV | 185A | 1.2kV | 310 ns | 310 ns | Standard | 1.2kV | 10A | 1 | 1200V | 100μA @ 1000V | 1.33V @ 10A | -40°C~150°C | ||||||||||||||||||||||
| GP2D012A060D | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d012a060d-datasheets-8682.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 632pF @ 1V 1MHz | 600V | 40μA @ 600V | 1.65V @ 12A | 12A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GDP24P060B | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/semiq-gdp24p060b-datasheets-8683.pdf | TO-247-2 | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 973pF @ 1V 1MHz | 600V | 100μA @ 600V | 1.7V @ 24A | 24A DC | -55°C~135°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5814 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AA, DO-4, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/478 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 20A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 400A | 35 ns | Standard | 1 | 300pF @ 10V 1MHz | 10μA @ 100V | 950mV @ 20A | -65°C~175°C | |||||||||||||||||||||||||||||||
| GDP15S120B | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/semiq-gdp15s120b-datasheets-8659.pdf | TO-247-2 | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 895pF @ 1V 1MHz | 1200V | 100μA @ 1200V | 1.7V @ 15A | 15A DC | -55°C~135°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5814 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MILITARY, MIL-PRF-19500/478 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AA, DO-4, Stud | 1 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/478 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 20A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 400A | 35 ns | Standard | 1 | 300pF @ 10V 1MHz | 10μA @ 100V | 950mV @ 20A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| JANTX1N3893 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/304 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AA, DO-4, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/304 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 12A | 1.5V | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 175A | 200 ns | Standard | 1 | 10μA @ 400V | 1.5V @ 38A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| GDP12S060A | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/semiq-gdp12s060a-datasheets-8686.pdf | TO-220-2 | TO-220-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 487pF @ 1V 1MHz | 600V | 100μA @ 600V | 1.7V @ 12A | 12A DC | -55°C~135°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP2D012A065A | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d012a065a-datasheets-8661.pdf | TO-220-2 | TO-220-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 632pF @ 1V 1MHz | 650V | 120μA @ 650V | 1.65V @ 12A | 12A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N3893R | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/304 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AA, DO-4, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | MIL-19500/304 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 12A | 1.5V | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 175A | 200 ns | Standard | 1 | 10μA @ 400V | 1.5V @ 38A | -65°C~175°C |
