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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Case Connection | Application | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| FES8CTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 125A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 125A | 150V | 35 ns | 35 ns | Standard | 150V | 8A | 1 | 8A | 10μA @ 150V | 950mV @ 8A | -55°C~150°C | ||||||||||||||||||||||||||
| SBLB8L40-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 125°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sbl8l40e345-datasheets-4660.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.45mm | 4.83mm | 9.14mm | Lead Free | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | SBLB8L40 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 250A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 40V | 250A | Schottky | 40V | 8A | 1 | 8A | 1mA @ 40V | 500mV @ 8A | -65°C~125°C | ||||||||||||||||||||||
| MBRB10H90-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbr10h150cte345-datasheets-6050.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.45mm | 4.83mm | 9.14mm | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | Common Cathode | 1 | Rectifier Diodes | 10A | 880mV | 250A | 4.5μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 4.5μA | 90V | 250A | Schottky | 90V | 10A | 1 | 4.5μA @ 90V | 770mV @ 10A | -65°C~175°C | |||||||||||||||||||||||||
| MBRB760HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | SINGLE | GULL WING | 245 | MBRB760 | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 7.5A | 150A | 500μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 60V | 150A | Schottky | 60V | 7.5A | 1 | 500μA @ 60V | 750mV @ 7.5A | -65°C~150°C | ||||||||||||||||||||||||
| 1N4246GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 160°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4246gpe354-datasheets-8798.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N4246 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 25A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 400V | 25A | 400V | Standard | 400V | 1A | 1A | 8pF @ 4V 1MHz | 1μA @ 400V | 1.2V @ 1A | -65°C~160°C | |||||||||||||||||||||||||
| 1N4942GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4947gpe354-datasheets-9953.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N4942 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 25A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 25A | 200V | 150 ns | 150 ns | Standard | 200V | 1A | 1A | 15pF @ 4V 1MHz | 1μA @ 200V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||||||
| UG15JT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 260 | 3 | Single | 40 | 1 | Rectifier Diodes | 15A | 1.75V | 135A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 600V | 135A | 600V | 50 ns | 50 ns | Standard | 600V | 15A | 1 | 30μA @ 600V | 1.75V @ 15A | 150°C Max | |||||||||||||||||||||||||
| 1N5397GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n5399gpe373-datasheets-2623.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N5397 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 1.5A | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 50A | 600V | 2 μs | 2 μs | Standard | 600V | 1.5A | 1 | 15pF @ 4V 1MHz | 5μA @ 600V | 1.4V @ 1.5A | -65°C~175°C | |||||||||||||||||||||
| 1N4935GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4934gpe354-datasheets-9941.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N4935 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 30A | 200V | 200 ns | 200 ns | Standard | 200V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 200V | 1.2V @ 1A | -65°C~175°C | |||||||||||||||||||||||
| NS8ATHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 50V | 125A | Standard | 50V | 8A | 1 | 8A | 10μA @ 50V | 1.1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||
| MBRB1050-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB1050 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 50V | 150A | Schottky | 50V | 10A | 1 | 100μA @ 50V | 800mV @ 10A | -65°C~150°C | |||||||||||||||||||||||||||
| 1N4007GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4007gpe354-datasheets-2720.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | No | 8541.10.00.80 | e3 | WIRE | 1N4007 | 2 | Single | 1 | Rectifier Diodes | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 30A | 1kV | 2 μs | 2 μs | Standard | 1kV | 1A | 1A | 8pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||
| U8CT-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 19 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 8A | 100A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 100A | 150V | TO-220AC | 20 ns | 20 ns | Standard | 150V | 8A | 1 | 8A | 10μA @ 150V | 1.02V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||
| UG5HTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug5hte345-datasheets-4419.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 5A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 500V | 65A | 50 ns | Standard | 500V | 5A | 1 | 5A | 30μA @ 500V | 1.75V @ 5A | -55°C~150°C | |||||||||||||||||||||||||||||
| MBRB1035-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB1035 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 840mV | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 35V | 150A | Schottky | 35V | 10A | 1 | 100μA @ 35V | 840mV @ 20A | -65°C~150°C | |||||||||||||||||||||||||
| UG12HTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug12jte345-datasheets-6932.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 12A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 500V | 135A | 50 ns | Standard | 500V | 12A | 1 | 30μA @ 500V | 1.75V @ 12A | 150°C Max | ||||||||||||||||||||||||||||||
| NSF8MTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 1.1V | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 125A | Standard | 1kV | 8A | 1 | 8A | 1000V | 10μA @ 1000V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||
| SBLF10L30HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sbl10l30he345-datasheets-4567.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 10A | 200A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 30V | 200A | TO-220AC | Schottky | 30V | 10A | 1 | 1mA @ 30V | 520mV @ 10A | -65°C~150°C | ||||||||||||||||||||||||||||||
| UG15HTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 15A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 500V | 135A | 50 ns | Standard | 500V | 15A | 1 | 30μA @ 500V | 1.75V @ 15A | -55°C~150°C | |||||||||||||||||||||||||||||||
| SE10PD-E3/84A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se10pjm384a-datasheets-2680.pdf | DO-220AA | 3.61mm | 1.15mm | 2.18mm | 2 | SE10PD | Single | DO-220AA (SMP) | 1A | 25A | Standard Recovery >500ns, > 200mA (Io) | 25A | 5μA | 200V | 200V | 780 ns | 780 ns | Standard | 200V | 1A | 200V | 5μA @ 200V | 1.05V @ 1A | 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||
| 1N4249GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 160°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4246gpe354-datasheets-8798.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N4249 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 25A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 25A | 1kV | Standard | 1kV | 1A | 1A | 8pF @ 4V 1MHz | 1000V | 1μA @ 1000V | 1.2V @ 1A | -65°C~160°C | ||||||||||||||||||||||||
| 1N4005GPEHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4007gpe354-datasheets-2720.pdf | DO-204AL, DO-41, Axial | Tin | 1N4005 | Single | DO-204AL (DO-41) | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 600V | 30A | 600V | 2 μs | 2 μs | Standard | 600V | 1A | 8pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.1V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| SBL8L40-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-sbl8l40e345-datasheets-4660.pdf | TO-220-2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT APPLICABLE | 3 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | 500mV | 220A | 500μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250A | TO-220AC | Schottky | 40V | 8A | 1 | 8A | 1mA @ 40V | 500mV @ 8A | -65°C~125°C | |||||||||||||||||||||||||||
| MBRB1060HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB1060 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 950mV | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | 150A | Schottky | 60V | 10A | 1 | 100μA @ 60V | 800mV @ 10A | -65°C~150°C | ||||||||||||||||||||||||||
| UG15HT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | TO-220-2 | 20 Weeks | 2 | No | Single | TO-220AC | 15A | 135A | Fast Recovery =< 500ns, > 200mA (Io) | 30μA | 500V | 135A | 500V | 50 ns | 50 ns | Standard | 500V | 15A | 500V | 30μA @ 500V | 1.75V @ 15A | 15A | 150°C Max | |||||||||||||||||||||||||||||||||||||||
| UB8CT-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 19 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 1.02V | 100A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 100A | 150V | 20 ns | 20 ns | Standard | 150V | 8A | 1 | 8A | 10μA @ 150V | 1.02V @ 8A | -55°C~150°C | |||||||||||||||||||||||
| SBL1040-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-sbl1030e345-datasheets-4591.pdf | TO-220-2 | 10.54mm | 15.32mm | 4.7mm | Lead Free | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SBL1040 | 3 | Single | 1 | Rectifier Diodes | 10A | 600mV | 250A | 1mA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 40V | 250A | Schottky | 40V | 10A | 1 | 1mA @ 40V | 600mV @ 10A | -40°C~125°C | ||||||||||||||||||||||||
| SBLF1030-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sbl1030e345-datasheets-4591.pdf | TO-220-3 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 10A | 250A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 30V | 250A | Schottky | 30V | 10A | 1 | 1mA @ 30V | 600mV @ 10A | -40°C~125°C | |||||||||||||||||||||||||||||||
| MBRF750-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 7.5A | 150A | 500μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 50V | 150A | Schottky | 50V | 7.5A | 1 | 500μA @ 50V | 750mV @ 7.5A | -65°C~150°C | |||||||||||||||||||||||||||||||
| UB8BT-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 19 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 1.02V | 100A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100A | 100V | 20 ns | 20 ns | Standard | 100V | 8A | 1 | 8A | 10μA @ 100V | 1.02V @ 8A | -55°C~150°C |
