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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Interface | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Voltage | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Max Output Current | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Number of Outputs | Breakdown Voltage | Natural Thermal Resistance | Speed | Output Configuration | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBR745 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr745-datasheets-1690.pdf | 45V | 7.5A | TO-220-2 | 10.54mm | 8.89mm | 4.7mm | Lead Free | No SVHC | 2 | 75A | Standard | 45V | MBR745 | Single | TO-220AC | 7.5A | 7.5A | 570mV | 150A | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | 150A | 100μA | 45V | 690A | Schottky | 45V | 7.5A | 45V | 100μA @ 45V | 840mV @ 15A | 7.5A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N3646 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/279 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n3644-datasheets-6252.pdf | S, Axial | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED, HIGH RELIABILITY | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 2.5kV | 14A | Standard | 1.75kV | 250mA | 1750V | 5μA @ 1750V | 5V @ 250mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N2059 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Stud Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n2059-datasheets-1695.pdf | DO-205AB, DO-9, Stud | 1 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | 1N2059 | 1 | 1 | Not Qualified | O-MUPM-H1 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 300V | 250A | 4500A | 1 | 300V | 17mA @ 300V | 1.25V @ 250A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR8035 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cable, Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 20 | Straight | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 2.54mm | 80A | 1kA | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 35V | Schottky | 35V | 80A | 1 | 1mA @ 35V | 750mV @ 80A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 300UR120A G BK G | Vishay Semiconductor Opto Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductoroptodivision-70ur60gbkr-datasheets-1584.pdf | DO-205AB, DO-9, Stud | 300UR120 | DO-205AB, DO-9 | Standard Recovery >500ns, > 200mA (Io) | Standard | 1200V | 1.3V @ 785A | 250A | -40°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 301U140 G R BL | Vishay Semiconductor Opto Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductoroptodivision-301u140grbl-datasheets-1700.pdf | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | Standard Recovery >500ns, > 200mA (Io) | Standard | 1400V | 15mA @ 1400V | 1.22V @ 942A | 300A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR6020R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 60A | 700A | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 20V | Schottky, Reverse Polarity | 20V | 60A | 1 | 5mA @ 20V | 650mV @ 60A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 301UR100 G BK G | Vishay Semiconductor Opto Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductoroptodivision-301u140grbl-datasheets-1700.pdf | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | Standard Recovery >500ns, > 200mA (Io) | Standard | 1000V | 15mA @ 1000V | 1.22V @ 942A | 300A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-95SQ015 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vs95sq015-datasheets-1641.pdf | DO-204AR, Axial | 9.52mm | 6.35mm | 6.35mm | Lead Free | 2 | Unknown | 2 | EAR99 | No | WIRE | 95SQ015 | Single | 1 | 9A | 310mV | 2.9kA | 7mA | ISOLATED | GENERAL PURPOSE | 44 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2.9kA | 7mA | 15V | 2.9kA | Schottky | 15V | 9A | 1 | 7mA @ 15V | 310mV @ 9A | -55°C~100°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6077US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 155°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6074us-datasheets-1204.pdf | SQ-MELF, E | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 6A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 30 ns | Standard | 100V | 6A | 1 | 1.3A | 5μA @ 100V | 1.76V @ 18.8A | -65°C~155°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6624US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1A | 1.8V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 990V | 20A | 60 ns | Standard | 900V | 1A | 1A | 10pF @ 10V 1MHz | 500nA @ 150V | 1.55V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HF40M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 180°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9000μA | Standard | 400V | 85A | 1800A | 1 | 400V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR7540R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 75A | 1kA | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 40V | Schottky, Reverse Polarity | 40V | 75A | 1 | 5mA @ 20V | 650mV @ 75A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-31DQ03 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs31dq03-datasheets-1653.pdf | 5.8mm | C-16, Axial | 10mm | 5.8mm | 5.8mm | 2 | Unknown | 2 | EAR99 | FREE WHEELING DIODE | No | WIRE | Single | 1 | 3.3A | 570mV | 450A | 1mA | ISOLATED | GENERAL PURPOSE | 80 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 450A | 1mA | 30V | 450A | 30 ns | Schottky | 30V | 3.3A | 1 | 1mA @ 30V | 570mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-11DQ03 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs11dq03-datasheets-1656.pdf | 2.7mm | DO-204AL, DO-41, Axial | 5.207mm | 2.7mm | 2.7mm | 2 | Unknown | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | WIRE | 2 | Single | 1 | 1.1A | 550mV | 225A | 1mA | ISOLATED | GENERAL PURPOSE | 100 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 225A | 1mA | 30V | 225A | 30 ns | Schottky | 30V | 1.1A | 1 | 1mA @ 30V | 550mV @ 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS110KGC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-scs110kgc-datasheets-1660.pdf | TO-220-2 | Lead Free | On/Off | EAR99 | NO | 100W | 1 | Rectifier Diodes | 2A | 1.5V | 1 | No Recovery Time > 500mA (Io) | High Side | 200μA | 1.2kV | 0ns | Silicon Carbide Schottky | 10A | 45A | 650pF @ 1V 1MHz | 1200V | 200μA @ 1200V | 1.75V @ 10A | 10A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-31DQ04 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs31dq03-datasheets-1653.pdf | C-16, Axial | 10mm | 5.8mm | 5.8mm | 2 | Unknown | 2 | EAR99 | FREE WHEELING DIODE | No | WIRE | Single | 1 | 3.3A | 570mV | 450A | 1mA | ISOLATED | GENERAL PURPOSE | 80 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 450A | 1mA | 40V | 450A | Schottky | 40V | 3.3A | 1 | 1mA @ 40V | 570mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR7545 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2002 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | MBR7545 | NOT SPECIFIED | 1 | O-MUPM-D1 | 75A | 1kA | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 45V | Schottky | 45V | 75A | 1 | 1mA @ 45V | 650mV @ 75A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12F20B BN R R | Vishay Semiconductor Opto Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | DO-203AA, DO-4, Stud | 12F20 | DO-203AA | Standard Recovery >500ns, > 200mA (Io) | Standard | 200V | 1.26V @ 38A | 12A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR1045 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 2012 | /files/vishaysemiconductordiodesdivision-mbr1045-datasheets-1667.pdf | 45V | 10A | TO-220-2 | 600pF | Contains Lead | 2 | 10A | Standard | 45V | MBR1045 | Single | TO-220AC | 10A | 840mV | 150A | 100μA | 45V | Fast Recovery =< 500ns, > 200mA (Io) | 150A | Schottky | 45V | 10A | 45V | 100μA @ 45V | 570mV @ 10A | 10A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5806URS | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | 2 | 22 Weeks | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e0 | TIN LEAD OVER NICKEL | MIL-19500 | YES | END | WRAP AROUND | 2 | 175°C | 1 | Qualified | O-LELF-R2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150V | 25ns | Standard | 1A | 25pF @ 10V 1MHz | 150V | 1μA @ 150V | 875mV @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAS21TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 2012 | /files/diodesincorporated-bas217f-datasheets-6708.pdf | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | EAR99 | 2A | unknown | 8541.10.00.70 | 250V | DUAL | GULL WING | BAS21 | Single | 1 | Not Qualified | R-PDSO-G3 | 2.5A | 100nA | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 50 ns | 50 ns | Standard | 200V | 200mA | 5pF @ 0V 1MHz | 100nA @ 200V | 1.25V @ 200mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4004/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Cut Tape (CT) | Not Applicable | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n400554-datasheets-0289.pdf | 400V | 1A | DO-204AL, DO-41, Axial | 15pF | Contains Lead | 2 | no | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 1N4004 | 2 | NOT SPECIFIED | 1 | Not Qualified | O-PALF-W2 | 1A | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 400V | 1A | 15pF @ 4V 1MHz | 5μA @ 400V | 1.1V @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR7560R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 75A | 800mV | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1kA | 1μA | 60V | Schottky, Reverse Polarity | 60V | 75A | 1 | 1mA @ 60V | 750mV @ 75A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LL4148-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/diodesincorporated-ll414813-datasheets-1590.pdf | 75V | 150mA | DO-213AC, MINI-MELF, SOD-80 | 4pF | 3.7mm | 1.6mm | 1.6mm | Lead Free | 2 | 2 | no | EAR99 | No | 8541.10.00.70 | e2 | Tin/Silver (Sn/Ag) | END | WRAP AROUND | LL4148 | 2 | Single | 500mW | 1 | Rectifier Diodes | 150mA | 150mA | 1V | 2A | 5μA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 5μA | 75V | 2A | 4 ns | 4 ns | Standard | 75V | 150mA | 5μA @ 75V | 1V @ 10mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| MBR6040R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 60A | 700A | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 40V | Schottky, Reverse Polarity | 40V | 60A | 1 | 5mA @ 20V | 650mV @ 60A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DL4934-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dl493613-datasheets-1569.pdf | 100V | 1A | DO-213AB, MELF | 15pF | Contains Lead | 2 | 2 | no | EAR99 | unknown | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | 235 | DL4934 | 2 | Single | 10 | 1 | Not Qualified | 1A | 1A | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 100V | 30A | 200 ns | Standard | 100V | 1A | 15pF @ 4V 1MHz | 5μA @ 100V | 1.2V @ 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| R3520 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Bulk | 200°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-r3520-datasheets-1615.pdf | 1 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | EXCELLENT RELIABILITY | No | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | 1 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 70A | POWER | SILICON | 50μA | 200V | 1.05kA | RECTIFIER DIODE | 1 | 5μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5811URS | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | 2 | 17 Weeks | no | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | MIL-19500 | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150V | 30ns | Standard | 125A | 1 | 3A | 60pF @ 10V 1MHz | 150V | 5μA @ 150V | 875mV @ 4A | 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HFA25TB60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-hfa25tb60-datasheets-1619.pdf | 600V | 25A | TO-220-2 | Contains Lead | 2 | Standard | HFA25TB60 | Single | TO-220AC | 2V | 225A | Fast Recovery =< 500ns, > 200mA (Io) | 20μA | 600V | 225A | 600V | 75 ns | 75 ns | Standard | 600V | 25A | 600V | 20μA @ 600V | 1.7V @ 25A | 25A | -55°C~150°C |
