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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Max Supply Voltage | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Max Current Rating | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Cable Length | Number of Conductors | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Regulation Current-Nom (Ireg) | Limiting Voltage-Max | Dynamic Impedance-Min | Current - Average Rectified (Io) | Operating Temperature - Junction | Cable Pitch |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N5286UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | 100V | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | ISOLATED | SILICON | 0.5W | CURRENT REGULATOR DIODE | 0.3mA | 1V | 9000000Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR6040 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 1.3A | UPPER | SOLDER LUG | MBR6040 | 1 | O-MUPM-D1 | 60A | 700A | 1μA | SINGLE | CATHODE | POWER | 249.936mm | 26 | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 40V | Schottky | 40V | 60A | 1 | 5mA @ 20V | 650mV @ 60A | -65°C~150°C | 1mm | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HF40M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard | 200V | 70A | 200V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR70KR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 70A | 870A | SINGLE | ANODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 800V | 800V | 500 ns | 500 ns | Standard, Reverse Polarity | 800V | 70A | 1 | 25μA @ 100V | 1.4V @ 70A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6629US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | E-MELF | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590F | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | O-LELF-R2 | 1.4A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 880V | 50ns | Standard | 1 | 3A | 40pF @ 10V 1MHz | 2μA @ 880V | 1.4V @ 1.4A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N5302UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | 100V | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | not_compliant | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | ISOLATED | SILICON | 0.5W | CURRENT REGULATOR DIODE | 1.5mA | 1.6V | 510000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR6060 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | MBR6060 | 1 | O-MUPM-D1 | 60A | 700A | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 60V | Schottky | 60V | 60A | 1 | 5mA @ 20V | 750mV @ 60A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5312UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 175°C | -65°C | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n5290ur1-datasheets-6192.pdf | Contains Lead | 2 | 20 Weeks | 100V | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | ISOLATED | SILICON | 0.5W | CURRENT REGULATOR DIODE | 3.9mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N3595US | Microsemi Corporation | $25.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-S-19500-241 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemi-jantx1n3595us-datasheets-2278.pdf | SQ-MELF, B | 2 | 8 Weeks | 2 | EAR99 | No | 8541.10.00.70 | MIL-19500 | END | WRAP AROUND | 2 | Single | 1 | Rectifier Diodes | Qualified | 200mA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 4A | 3 μs | Standard | 0.15A | 1nA @ 125V | 1V @ 200mA | 200mA DC | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5303UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 175°C | -65°C | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | 100V | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | ISOLATED | SILICON | 0.5W | CURRENT REGULATOR DIODE | 1.6mA | 1.65V | 475000Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-121NQ045PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs121nq045pbf-datasheets-1460.pdf | D-67 HALF-PAK | 1 | 14 Weeks | 2 | EAR99 | FREE WHEELING DIODE, UL RECOGNIZED | unknown | UPPER | UNSPECIFIED | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PUFM-X1 | 16kA | 10mA | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 45V | Schottky | 16000A | 1 | 5200pF @ 5V 1MHz | 45V | 10mA @ 45V | 650mV @ 120A | 120A | |||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6621US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | 2 | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 440V | 20A | 0.5μA | 30 ns | Standard | 440V | 1.2A | 1 | 500nA @ 440V | 1.4V @ 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
| VS-85HF20M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 180°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9000μA | Standard | 200V | 85A | 1800A | 1 | 200V | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SD51R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -60°C | RoHS Compliant | /files/genesicsemiconductor-sd51r-datasheets-2283.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 60A | 800A | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 45V | Schottky, Reverse Polarity | 45V | 60A | 1 | 5mA @ 45V | 660mV @ 60A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6700 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 125°C | -65°C | SCHOTTKY | Non-RoHS Compliant | 1997 | 2 | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | MIL | AXIAL | WIRE | 2 | Single | 1 | 5A | ISOLATED | GENERAL PURPOSE | SILICON | 200μA | 20V | RECTIFIER DIODE | 1 | 5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5553US | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | Non-RoHS Compliant | SQ-MELF | 2 | 12 Weeks | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | YES | END | WRAP AROUND | 1N5553 | 2 | 175°C | 1 | Rectifier Diodes | O-LELF-R2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 800V | 2μs | Standard | 150A | 1 | 3A | 92pF @ 5V 1MHz | 800V | 1μA @ 800V | 1V @ 3A | 5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5308-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 8 Weeks | 100V | IN PRODUCTION (Last Updated: 1 month ago) | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5305UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | SILICON | 0.5W | 100V | DO-213AB | CURRENT REGULATOR DIODE | 2mA | 1.85V | 395000Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5832 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | No SVHC | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 1N5832 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 40A | 520mV | 800A | 1μA | CATHODE | POWER | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 20V | Schottky | 20V | 40A | 1 | 20mA @ 10V | 520mV @ 40A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| 1N5833R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1N5833R | 1 | O-MUPM-D1 | 40A | 800A | 1μA | SINGLE | ANODE | POWER | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 30V | Schottky, Reverse Polarity | 30V | 40A | 1 | 20mA @ 10V | 550mV @ 40A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| MBR60100 | GeneSiC Semiconductor | $21.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | No SVHC | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | MBR60100 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 60A | 880mV | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 700A | 1μA | 100V | Schottky | 100V | 60A | 1 | 5mA @ 20V | 840mV @ 60A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6623US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | 18 Weeks | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 880V | 500nA @ 880V | 1.55V @ 1A | 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DPF120X200NA | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | SOT-227-4, miniBLOC | DPF*X | Standard Recovery >500ns, > 200mA (Io) | Standard | 200V | 120A | 200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HF120M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.2V | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.8kA | 9000μA | Standard | 400V | 85A | 1800A | 1 | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6627U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | SQ-MELF, E | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | 8541.10.00.80 | e0 | TIN LEAD | MIL | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | NOT SPECIFIED | Not Qualified | O-LELF-R2 | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30ns | Standard | 75A | 1 | 4A | 400V | 2μA @ 400V | 1.35V @ 2A | 1.75A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5311UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | SILICON | 0.5W | 100V | DO-213AB | CURRENT REGULATOR DIODE | 3.6mA | 2.5V | 265000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5310UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n5290ur1-datasheets-6192.pdf | 2 | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | SILICON | 0.5W | 100V | DO-213AB | CURRENT REGULATOR DIODE | 3.3mA | 2.35V | 280000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5298UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 175°C | -65°C | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | 100V | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | END | WRAP AROUND | Single | 1 | ISOLATED | SILICON | 0.5W | CURRENT REGULATOR DIODE | 1.1mA | 1.4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5308UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | SILICON | 0.5W | 100V | DO-213AB | CURRENT REGULATOR DIODE | 2.7mA | 2.15V | 320000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HFR20M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | 200V | 70A | 200V | 1.35V @ 220A | 70A | -65°C~180°C |
