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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | REACH SVHC | Max Supply Voltage | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Reach Compliance Code | HTS Code | Max Current Rating | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Cable Length | Number of Conductors | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Regulation Current-Nom (Ireg) | Limiting Voltage-Max | Dynamic Impedance-Min | Current - Average Rectified (Io) | Operating Temperature - Junction | Cable Pitch |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTXV1N6624 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 990V | DO-41 | 50 ns | Standard | 990V | 1A | 1A | 500nA @ 990V | 1.55V @ 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6628US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | E-MELF | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | MIL-19500/590F | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.75A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 660V | 30ns | Standard | 1 | 4A | 40pF @ 10V 1MHz | 2μA @ 660V | 1.35V @ 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| MBR7535 | GeneSiC Semiconductor | $147.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | MBR7535 | 1 | O-MUPM-D1 | 75A | 1kA | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 35V | Schottky | 35V | 75A | 1 | 1mA @ 35V | 750mV @ 75A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6077 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/503 | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | E, Axial | 2 | no | METALLURGICALLY BONDED, HIGH RELIABILITY | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/503 | NO | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Qualified | O-LALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30ns | Standard | 75A | 1 | 6A | 100V | 5μA @ 100V | 1.76V @ 18.8A | 1.3A | -65°C~155°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SM25 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | RoHS Compliant | Axial | 2 | 18 Weeks | 2 | no | EAR99 | unknown | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 260mA | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 2.5kV | 14A | 2.5 μs | Standard | 2.5kV | 600mA | 8pF @ 5V 1MHz | 2500V | 1μA @ 2500V | 5V @ 250mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR75100 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cable, Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | /files/genesicsemiconductor-mbr75100-datasheets-2308.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 9 | Straight | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 2.54mm | 75A | 1kA | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 100V | Schottky | 100V | 75A | 1 | 5mA @ 20V | 840mV @ 75A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5304-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5712UB | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SCHOTTKY | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5712ub-datasheets-1501.pdf | 3 | 26 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 8541.10.00.70 | e4 | GOLD OVER NICKEL | YES | DUAL | NO LEAD | 260 | 3 | 30 | 1 | Not Qualified | R-CDSO-N3 | SINGLE | SILICON | RECTIFIER DIODE | 0.075A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6076 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | Not Applicable | Non-RoHS Compliant | Axial | 2 | 12 Weeks | unknown | 8541.10.00.80 | NO | WIRE | 2 | 150°C | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | SUPER FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 30ns | Standard | 70A | 1 | 1.3A | 60pF @ 5V 1MHz | 50V | 5μA @ 50V | 1.2V @ 3A | 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5296UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | SILICON | 0.5W | 100V | DO-213AB | CURRENT REGULATOR DIODE | 0.91mA | 1.29V | 880000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6630US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6628us-datasheets-2277.pdf | SQ-MELF, E | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590F | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.4A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 990V | 50ns | Standard | 1 | 3A | 900V | 2μA @ 900V | 1.4V @ 1.4A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| MBR8020 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cable, Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | /files/genesicsemiconductor-mbr8020-datasheets-2310.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 11 | Straight | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 2.54mm | 80A | 1kA | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 20V | Schottky | 20V | 80A | 1 | 1mA @ 20V | 750mV @ 80A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5711UB | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SCHOTTKY | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5712ub-datasheets-1501.pdf | 3 | 26 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | 8541.10.00.70 | e4 | GOLD OVER NICKEL | YES | DUAL | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-CDSO-N3 | SINGLE | SILICON | RECTIFIER DIODE | 0.033A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR6035 | GeneSiC Semiconductor | $21.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbr6035-datasheets-2301.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 60A | 700A | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 35V | Schottky | 35V | 60A | 1 | 5mA @ 20V | 650mV @ 60A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR7540 | GeneSiC Semiconductor | $23.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 75A | 1kA | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 40V | Schottky | 40V | 75A | 1 | 5mA @ 20V | 650mV @ 75A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR6045 | GeneSiC Semiconductor | $21.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | No SVHC | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | MBR6045 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 60A | 650mV | 700A | 1μA | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 45V | Schottky | 45V | 60A | 1 | 5mA @ 20V | 650mV @ 60A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HFR80M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.2V | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.8kA | 9000μA | Standard, Reverse Polarity | 800V | 85A | 1800A | 1 | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HFR120M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | 2 | Single | DO-203AB (DO-5) | 1.35V | Standard Recovery >500ns, > 200mA (Io) | 1.25kA | Standard, Reverse Polarity | 1.2kV | 70A | 1200V | 1.35V @ 220A | 70A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5288UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 175°C | -65°C | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | 100V | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | ISOLATED | SILICON | 0.5W | CURRENT REGULATOR DIODE | 0.39mA | 1.05V | 4100000Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HFR10M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | 100V | 70A | 100V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HFR40M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 180°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9000μA | Standard, Reverse Polarity | 400V | 85A | 1800A | 1 | 400V | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5298-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 20 Weeks | 100V | IN PRODUCTION (Last Updated: 1 month ago) | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5551US | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | Non-RoHS Compliant | SQ-MELF | 2 | 12 Weeks | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | YES | END | WRAP AROUND | 1N5551 | 2 | 175°C | 1 | Rectifier Diodes | O-LELF-R2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400V | 2μs | Standard | 150A | 1 | 3A | 92pF @ 5V 1MHz | 400V | 1μA @ 400V | 1V @ 3A | 5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HFR80M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 13 Weeks | 2 | Common Anode | DO-203AB (DO-5) | 70A | Standard Recovery >500ns, > 200mA (Io) | 1.25kA | 9mA | 800V | Standard, Reverse Polarity | 800V | 70A | 800V | 1.35V @ 220A | 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR6080 | GeneSiC Semiconductor | $22.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | MBR6080 | 1 | O-MUPM-D1 | 60A | 700A | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 80V | Schottky | 80V | 60A | 1 | 5mA @ 20V | 840mV @ 60A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6097 | GeneSiC Semiconductor | $38.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | No SVHC | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 1N6097 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 50A | 700mV | 400A | 1μA | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 30V | Schottky | 30V | 50A | 1 | 5mA @ 30V | 700mV @ 50A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5286UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | 100V | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | ISOLATED | SILICON | 0.5W | CURRENT REGULATOR DIODE | 0.3mA | 1V | 9000000Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR6040 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 1.3A | UPPER | SOLDER LUG | MBR6040 | 1 | O-MUPM-D1 | 60A | 700A | 1μA | SINGLE | CATHODE | POWER | 249.936mm | 26 | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 40V | Schottky | 40V | 60A | 1 | 5mA @ 20V | 650mV @ 60A | -65°C~150°C | 1mm | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HF40M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard | 200V | 70A | 200V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR70KR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 70A | 870A | SINGLE | ANODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 800V | 800V | 500 ns | 500 ns | Standard, Reverse Polarity | 800V | 70A | 1 | 25μA @ 100V | 1.4V @ 70A | -40°C~125°C |
