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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Breakdown Voltage | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBR7520R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 75A | 1kA | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 20V | Schottky, Reverse Polarity | 20V | 75A | 1 | 5mA @ 20V | 650mV @ 75A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| USD245 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | SCHOTTKY | Non-RoHS Compliant | 1997 | TO-39 | 3 | 8 Weeks | 3 | no | EAR99 | 8541.10.00.80 | e0 | TIN LEAD | BOTTOM | WIRE | NOT SPECIFIED | 175°C | -65°C | NOT SPECIFIED | 2 | Not Qualified | COMMON CATHODE, 2 ELEMENTS | EFFICIENCY | SILICON | 45V | TO-205AF | RECTIFIER DIODE | 80A | 1 | 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR7530 | GeneSiC Semiconductor | $21.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 75A | 1kA | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 30V | Schottky | 30V | 75A | 1 | 5mA @ 20V | 650mV @ 75A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5809URS | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | 2 | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | MIL-19500 | YES | END | WRAP AROUND | 2 | 175°C | 1 | Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 30ns | Standard | 125A | 1 | 3A | 60pF @ 10V 1MHz | 100V | 5μA @ 100V | 875mV @ 4A | 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DL4004-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dl400113-datasheets-1525.pdf | 400V | 1A | DO-213AB, MELF | 15pF | 5.2mm | 2.64mm | 2.64mm | Contains Lead | 2 | 249.986095mg | 2 | no | EAR99 | HIGH RELIABILITY | unknown | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | 235 | DL4004 | 2 | Single | 10 | 1 | Rectifier Diodes | Not Qualified | 1A | 1A | 1.1V | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 30A | Standard | 400V | 1A | 400V | 15pF @ 4V 1MHz | 5μA @ 400V | 1.1V @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| VS-72HF80M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | 2 | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard | 800V | 70A | 800V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR80100 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | /files/genesicsemiconductor-mbr80100-datasheets-2337.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 80A | 1kA | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 100V | Schottky | 100V | 80A | 1 | 1mA @ 100V | 840mV @ 80A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-71HF120M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard | 1.2kV | 70A | 1200V | 1.35V @ 220A | 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4002/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | Not Applicable | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n400554-datasheets-0289.pdf | 100V | 1A | DO-204AL, DO-41, Axial | 15pF | Contains Lead | 2 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 1N4002 | 2 | NOT SPECIFIED | 1 | Not Qualified | O-PALF-W2 | 1A | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 100V | 1A | 15pF @ 4V 1MHz | 5μA @ 100V | 1.1V @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6073 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/503 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 155°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | METALLURGICALLY BONDED, HIGH RELIABILITY | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/503 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 2.04V | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 35A | 30ns | Standard | 1 | 3A | 50V | 1μA @ 50V | 2.04V @ 9.4A | 850mA | -65°C~155°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-71HFLR100S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | 1kV | 70A | 1000V | 1.35V @ 220A | 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR6030R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | /files/genesicsemiconductor-mbr6030r-datasheets-2341.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 60A | 700A | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 30V | Schottky, Reverse Polarity | 30V | 60A | 1 | 5mA @ 20V | 650mV @ 60A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR7530R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | /files/genesicsemiconductor-mbr7530r-datasheets-2342.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 75A | 1kA | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 30V | Schottky, Reverse Polarity | 30V | 75A | 1 | 1mA @ 30V | 750mV @ 75A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR7545R | GeneSiC Semiconductor | $24.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 75A | 750mV | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1kA | 1μA | 45V | Schottky, Reverse Polarity | 45V | 75A | 1 | 1mA @ 45V | 650mV @ 75A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 10BQ100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 2007 | /files/vishaysemiconductordiodesdivision-10bq100-datasheets-1519.pdf | 100V | 1A | DO-214AA, SMB | 42pF | Contains Lead | 2 | Standard | 10BQ100 | Single | SMB | 1A | 890mV | 780A | 500μA | 100V | Fast Recovery =< 500ns, > 200mA (Io) | 780A | 2 μs | Schottky | 100V | 1A | 100V | 500μA @ 100V | 780mV @ 1A | 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JTX1N3645 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 16 Weeks | 1N3645 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR6035R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbr6035r-datasheets-2323.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 60A | 700A | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 35V | Schottky, Reverse Polarity | 35V | 60A | 1 | 5mA @ 20V | 650mV @ 60A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DL4001-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dl400113-datasheets-1525.pdf | 50V | 1A | DO-213AB, MELF | 15pF | 5.2mm | 2.64mm | 2.64mm | Contains Lead | 2 | 249.986095mg | 2 | no | EAR99 | HIGH RELIABILITY | unknown | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 235 | DL4001 | 2 | Single | 10 | 1 | Rectifier Diodes | Not Qualified | 1A | 1A | 1.1V | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 50V | 30A | Standard | 50V | 1A | 50V | 15pF @ 4V 1MHz | 5μA @ 50V | 1.1V @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| MBR7520 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 75A | 1kA | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 20V | Schottky | 20V | 75A | 1 | 5mA @ 20V | 650mV @ 75A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-72HFR80M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | 2 | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | 800V | 70A | 800V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S1DB-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | 150°C | -65°C | Non-RoHS Compliant | 2006 | /files/diodesincorporated-s1m13f-datasheets-6717.pdf | 200V | 1A | DO-214AA, SMB | 10pF | 4.57mm | 2.42mm | 3.94mm | Contains Lead | 2 | 92.986436mg | 2 | EAR99 | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn85Pb15) | DUAL | C BEND | 235 | S1D | 2 | Single | 10 | 1 | Rectifier Diodes | Not Qualified | 1A | 1A | 1.1V | 30A | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 30A | 3 μs | 3 μs | Standard | 200V | 1A | 200V | 10pF @ 4V 1MHz | 5μA @ 200V | 1.1V @ 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||
| MBR8040 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 80A | 1kA | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 40V | Schottky | 40V | 80A | 1 | 1mA @ 35V | 750mV @ 80A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5802URS | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | 2 | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e0 | TIN LEAD OVER NICKEL | MIL-19500 | YES | END | WRAP AROUND | 2 | 175°C | 1 | Qualified | O-LELF-R2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 25ns | Standard | 1A | 25pF @ 10V 1MHz | 50V | 1μA @ 50V | 875mV @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HF140M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4500μA | Standard | 1.4kV | 85A | 1800A | 1 | 1400V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6624 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 990V | DO-41 | 50 ns | Standard | 990V | 1A | 1A | 500nA @ 990V | 1.55V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6628US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | E-MELF | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | MIL-19500/590F | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.75A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 660V | 30ns | Standard | 1 | 4A | 40pF @ 10V 1MHz | 2μA @ 660V | 1.35V @ 2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| 1N6076US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 155°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6074us-datasheets-1204.pdf | SQ-MELF, E | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 6A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 30 ns | Standard | 50V | 6A | 1 | 1.3A | 5μA @ 50V | 1.76V @ 18.8A | -65°C~155°C | |||||||||||||||||||||||||||||||||||||||||||||
| JTX1N3644 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5804URS | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | 2 | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e0 | TIN LEAD OVER NICKEL | MIL-19500 | YES | END | WRAP AROUND | 2 | 175°C | 1 | Qualified | O-LELF-R2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 25ns | Standard | 1A | 25pF @ 10V 1MHz | 100V | 1μA @ 100V | 875mV @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR8030 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cable, Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 17 | Straight | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 2.54mm | 80A | 1kA | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 30V | Schottky | 30V | 80A | 1 | 1mA @ 30V | 750mV @ 80A | -55°C~150°C |
