Products
Manufacturer
RFQ
NEWS
ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Breakdown Voltage | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Regulation Current-Nom (Ireg) | Limiting Voltage-Max | Dynamic Impedance-Min | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LL4148-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/diodesincorporated-ll414813-datasheets-1590.pdf | 75V | 150mA | DO-213AC, MINI-MELF, SOD-80 | 4pF | 3.7mm | 1.6mm | 1.6mm | Lead Free | 2 | 2 | no | EAR99 | No | 8541.10.00.70 | e2 | Tin/Silver (Sn/Ag) | END | WRAP AROUND | LL4148 | 2 | Single | 500mW | 1 | Rectifier Diodes | 150mA | 150mA | 1V | 2A | 5μA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 5μA | 75V | 2A | 4 ns | 4 ns | Standard | 75V | 150mA | 5μA @ 75V | 1V @ 10mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| MBR6040R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 60A | 700A | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 40V | Schottky, Reverse Polarity | 40V | 60A | 1 | 5mA @ 20V | 650mV @ 60A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DL4934-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dl493613-datasheets-1569.pdf | 100V | 1A | DO-213AB, MELF | 15pF | Contains Lead | 2 | 2 | no | EAR99 | unknown | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | 235 | DL4934 | 2 | Single | 10 | 1 | Not Qualified | 1A | 1A | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 100V | 30A | 200 ns | Standard | 100V | 1A | 15pF @ 4V 1MHz | 5μA @ 100V | 1.2V @ 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| R3520 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Bulk | 200°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-r3520-datasheets-1615.pdf | 1 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | EXCELLENT RELIABILITY | No | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | 1 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 70A | POWER | SILICON | 50μA | 200V | 1.05kA | RECTIFIER DIODE | 1 | 5μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5811URS | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | 2 | 17 Weeks | no | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | MIL-19500 | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150V | 30ns | Standard | 125A | 1 | 3A | 60pF @ 10V 1MHz | 150V | 5μA @ 150V | 875mV @ 4A | 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HFA25TB60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-hfa25tb60-datasheets-1619.pdf | 600V | 25A | TO-220-2 | Contains Lead | 2 | Standard | HFA25TB60 | Single | TO-220AC | 2V | 225A | Fast Recovery =< 500ns, > 200mA (Io) | 20μA | 600V | 225A | 600V | 75 ns | 75 ns | Standard | 600V | 25A | 600V | 20μA @ 600V | 1.7V @ 25A | 25A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 8TQ100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 2012 | 100V | 8A | TO-220-2 | 500pF | 10.67mm | 9.02mm | 4.83mm | Contains Lead | 2 | Standard | 8TQ100 | Single | TO-220AC | 8A | 8A | 880mV | 100V | Fast Recovery =< 500ns, > 200mA (Io) | 850A | 550μA | 100V | 850A | Schottky | 100V | 8A | 100V | 550μA @ 100V | 720mV @ 8A | 8A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HFA08TB60 | Vishay Semiconductor Diodes Division | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-hfa08tb60-datasheets-1622.pdf | 600V | 8A | TO-220-2 | 10pF | Contains Lead | 2 | Standard | HFA08TB60 | Single | TO-220AC | 8A | 2.1V | 60A | Fast Recovery =< 500ns, > 200mA (Io) | 5A | 5μA | 60A | 600V | 55 ns | 55 ns | Standard | 600V | 8A | 600V | 5μA @ 600V | 1.7V @ 8A | 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR75100R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbr75100r-datasheets-2404.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 75A | 1kA | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 100V | Schottky, Reverse Polarity | 100V | 75A | 1 | 5mA @ 20V | 840mV @ 75A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR6060R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 60A | 700A | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 60V | Schottky, Reverse Polarity | 60V | 60A | 1 | 5mA @ 20V | 750mV @ 60A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5552US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, B | 2 | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/420G | END | WRAP AROUND | 235 | Single | 20 | 1 | Qualified | O-LELF-R2 | 5A | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 100A | 2 μs | Standard | 1 | 3A | 1μA @ 600V | 1.2V @ 9A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-71HF140M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard | 1.4kV | 70A | 1400V | 1.35V @ 220A | 70A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6631US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | E-MELF | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590F | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.4A | 1.95V | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000V | 1.1kV | 60A | 60ns | Standard | 1 | 2A | 40pF @ 10V 1MHz | 1100V | 4μA @ 1100V | 1.6V @ 1.4A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5552US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, B | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 235 | 2 | Single | 20 | 1 | Qualified | 5A | 1.2V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 100A | 2 μs | Standard | 1 | 3A | 1μA @ 600V | 1.2V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-72HF120M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard | 1.2kV | 70A | 1200V | 1.35V @ 220A | 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DL4936-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dl493613-datasheets-1569.pdf | 400V | 1A | DO-213AB, MELF | 15pF | Contains Lead | 2 | 2 | no | EAR99 | unknown | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | 235 | DL4936 | 2 | Single | 10 | 1 | Not Qualified | 1A | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30A | 200 ns | Standard | 400V | 1A | 15pF @ 4V 1MHz | 5μA @ 400V | 1.2V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HF160M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4500μA | Standard | 1.6kV | 85A | 1800A | 1 | 1600V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5292UR-1 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 | FIELD EFFECT | Non-RoHS Compliant | 1999 | /files/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | 100V | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | Single | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | ISOLATED | SILICON | 0.5W | DO-213AB | CURRENT REGULATOR DIODE | 0.62mA | 1.13V | 1550000Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5417US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5416us-datasheets-6131.pdf | SQ-MELF, B | Contains Lead | 2 | 12 Weeks | 2 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/411L | END | WRAP AROUND | 235 | 2 | Single | 20 | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 80A | 150 ns | Standard | 200V | 3A | 1 | 3A | 1μA @ 200V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5807URS | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | 2 | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | MIL-19500 | YES | END | WRAP AROUND | 2 | 175°C | -65°C | 1 | Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 30ns | Standard | 125A | 1 | 3A | 60pF @ 10V 1MHz | 50V | 5μA @ 50V | 875mV @ 4A | 3A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6097R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N6097R | 1 | O-MUPM-D1 | 50A | 400A | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 30V | Schottky, Reverse Polarity | 30V | 50A | 1 | 5mA @ 30V | 700mV @ 50A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70UR60 G BK R | Vishay Semiconductor Opto Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductoroptodivision-70ur60gbkr-datasheets-1584.pdf | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | Standard Recovery >500ns, > 200mA (Io) | Standard | 600V | 60mA @ 600V | 1.3V @ 785A | 250A | -40°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4003/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Cut Tape (CT) | Not Applicable | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n400554-datasheets-0289.pdf | 200V | 1A | DO-204AL, DO-41, Axial | 15pF | Contains Lead | 2 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 1N4003 | 2 | NOT SPECIFIED | 1 | Not Qualified | O-PALF-W2 | 1A | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 200V | 1A | 15pF @ 4V 1MHz | 5μA @ 200V | 1.1V @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6701 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 125°C | -65°C | SCHOTTKY | Non-RoHS Compliant | 1997 | 2 | 2 | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | MIL | AXIAL | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 5A | ISOLATED | GENERAL PURPOSE | SILICON | 30V | RECTIFIER DIODE | 1 | 5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR8080 | GeneSiC Semiconductor | $22.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 80A | 1kA | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 80V | Schottky | 80V | 80A | 1 | 1mA @ 80V | 840mV @ 80A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR6020 | GeneSiC Semiconductor | $0.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 60A | 700A | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 20V | Schottky | 20V | 60A | 1 | 5mA @ 20V | 650mV @ 60A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-31DQ06 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-vs31dq06-datasheets-1594.pdf | 5.8mm | C-16, Axial | 10mm | 5.8mm | 5.8mm | Lead Free | 2 | Unknown | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | WIRE | Single | 1 | 3.3A | 780mV | ISOLATED | GENERAL PURPOSE | 80 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 340A | 2mA | 60V | 340A | Schottky | 60V | 3.3A | 1 | 2mA @ 60V | 620mV @ 3A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DL4004-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dl400113-datasheets-1525.pdf | 400V | 1A | DO-213AB, MELF | 15pF | 5.2mm | 2.64mm | 2.64mm | Contains Lead | 2 | 249.986095mg | 2 | no | EAR99 | HIGH RELIABILITY | unknown | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | 235 | DL4004 | 2 | Single | 10 | 1 | Rectifier Diodes | Not Qualified | 1A | 1A | 1.1V | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 30A | Standard | 400V | 1A | 400V | 15pF @ 4V 1MHz | 5μA @ 400V | 1.1V @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-72HF80M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | 2 | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard | 800V | 70A | 800V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR80100 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | /files/genesicsemiconductor-mbr80100-datasheets-2337.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 80A | 1kA | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 100V | Schottky | 100V | 80A | 1 | 1mA @ 100V | 840mV @ 80A | -55°C~150°C |
