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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Regulation Current-Nom (Ireg) | Limiting Voltage-Max | Dynamic Impedance-Min | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTX1N3595UR-1 | Microsemi Corporation | $6.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/241 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemi-jantx1n3595ur1-datasheets-0982.pdf | DO-213AA | 2 | 14 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 150mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 1nA | 125V | 4A | 3 μs | Standard | 125V | 150mA | 0.15A | 1nA @ 125V | 920mV @ 100mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| S2F | Semtech Corporation | $12.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/semtech-s2f-datasheets-0983.pdf | Axial | Contains Lead | 2 | 18 Weeks | 2 | no | EAR99 | unknown | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.2V | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 200V | 150 ns | Standard | 200V | 2A | 1 | 2A | 27pF @ 5V 1MHz | 500nA @ 200V | 1.2V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| 1N5621 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | Non-RoHS Compliant | Axial | 2 | 12 Weeks | 2 | EAR99 | No | 8541.10.00.80 | WIRE | 2 | Single | 1 | Rectifier Diodes | 2A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 800V | 25A | DO-7 | 300 ns | Standard | 1A | 18pF @ 5V 1MHz | 500nA @ 800V | 1.2V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N7054UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 8 Weeks | YES | Current Regulator Diodes | SILICON | 0.5W | 50V | CURRENT REGULATOR DIODE | 9.1mA | 6.55V | 20000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5415US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Surface Mount, Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5416us-datasheets-6131.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | HIGH RELIABILITY | No | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | 235 | Single | 20 | 1 | Rectifier Diodes | Qualified | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 50V | 80A | 150 ns | Standard | 50V | 3A | 1 | 3A | 1μA @ 50V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| VS-86HF80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Screw | 180°C | -65°C | ROHS3 Compliant | 1998 | /files/vishaysemiconductordiodesdivision-vs86hf80-datasheets-9123.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | No SVHC | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.2V | 1.8kA | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.7kA | 9mA | 800V | 1.8kA | 800V | 35 ns | Standard | 800V | 85A | 1 | 9mA @ 800V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||
| 1N5616 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | Not Applicable | Non-RoHS Compliant | Axial | 2 | 12 Weeks | no | EAR99 | METALLURGICALLY BONDED | unknown | 8541.10.00.80 | e0 | TIN LEAD | NO | WIRE | NOT SPECIFIED | 1N5616 | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | E-XALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400V | 2μs | Standard | 50A | 1A | 23pF @ 5V 1MHz | 400V | 500nA @ 400V | 1.1V @ 1A | 2A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-88HFR120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.8kA | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.8kA | 9mA | 1.2kV | 1.8kA | 1.2kV | Standard, Reverse Polarity | 1.2kV | 85A | 1 | 1200V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||
| 1N5620 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | RoHS Compliant | Axial | 2 | 12 Weeks | 2 | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | WIRE | 1N5620 | 2 | Single | 1 | Rectifier Diodes | 2A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 800V | 30A | 2 μs | Standard | 1A | 23pF @ 5V 1MHz | 500nA @ 800V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-88HFR60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.8kA | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 600V | 1.8kA | 600V | Standard, Reverse Polarity | 600V | 85A | 1 | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5811 | Semtech Corporation | $6.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | RoHS Compliant | Axial | Contains Lead | 16 Weeks | 2 | 1N5811 | Single | Axial | 6A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 150V | 125A | 30 ns | Standard | 60pF @ 5V 1MHz | 150V | 5μA @ 150V | 875mV @ 4A | 6A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6626 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6628-datasheets-8347.pdf | A, Axial | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | METALLURGICALLY BONDED, HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.75A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 220V | 30 ns | Standard | 220V | 1.75A | 1 | 40pF @ 10V 1MHz | 2μA @ 220V | 1.35V @ 2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| 1N5614 | Semtech Corporation | $14.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | RoHS Compliant | Axial | 2 | 12 Weeks | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | WIRE | 2 | Single | 1 | Rectifier Diodes | O-XALF-W2 | 2A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 200V | 30A | 2 μs | Standard | 1A | 23pF @ 5V 1MHz | 500nA @ 200V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| 1N5809 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | RoHS Compliant | 2008 | Axial | 16 Weeks | 2 | No | 1N5809 | Single | Axial | 6A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 100V | 125A | 30 ns | Standard | 60pF @ 5V 1MHz | 100V | 5μA @ 100V | 875mV @ 4A | 6A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-60APF04PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs60epf04pbf-datasheets-5728.pdf | TO-247-3 | 3 | 8 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-247AC | 180 ns | Standard | 400V | 60A | 830A | 1 | 400V | 100μA @ 400V | 1.3V @ 60A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| MUR2505R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mur2505r-datasheets-0990.pdf | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 4 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 175°C | 1 | O-MUPM-D1 | 500A | SINGLE | ANODE | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50V | 75 ns | Standard, Reverse Polarity | 50V | 25A | 1 | 50V | 10μA @ 50V | 1V @ 25A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-60APF06PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs60epf04pbf-datasheets-5728.pdf | TO-247-3 | 3 | 8 Weeks | 3 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | Common Anode | NOT APPLICABLE | 1 | 1.3V | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 830A | 100μA | TO-247AC | 180 ns | Standard | 600V | 60A | 1 | 100μA @ 600V | 1.3V @ 60A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5614 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | Contains Lead | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 200V | 30A | 2 μs | Standard | 200V | 1A | 1A | 500nA @ 200V | 1.3V @ 3A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||
| VS-88HF20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.8kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 200V | 1.8kA | 200V | Standard | 200V | 85A | 1 | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-71HFR60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB | 1.25kA | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 9mA | 600V | Standard, Reverse Polarity | 600V | 70A | 600V | 9mA @ 600V | 1.35V @ 220A | 70A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-87HFR100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 180°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1kV | Standard, Reverse Polarity | 1kV | 85A | 1800A | 1 | 1000V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||
| 1N5617 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | RoHS Compliant | 2008 | Axial | 2 | 12 Weeks | 2 | no | EAR99 | No | 8541.10.00.80 | e0 | TIN LEAD | WIRE | 1N5617 | 2 | Single | 1 | Rectifier Diodes | 2A | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 400V | 25A | DO-7 | 150 ns | Standard | 1A | 27pF @ 5V 1MHz | 500nA @ 400V | 1.2V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| 1N6627 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantxv1n6628-datasheets-8347.pdf | A, Axial | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | METALLURGICALLY BONDED, HIGH RELIABILITY | Yes | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.75A | 1.5V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 440V | 75A | 30 ns | Standard | 440V | 1.75A | 1 | 40pF @ 10V 1MHz | 2μA @ 440V | 1.35V @ 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
| 1N5622 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | Non-RoHS Compliant | Axial | 2 | 12 Weeks | 2 | EAR99 | No | 8541.10.00.80 | WIRE | 1N5622 | 2 | Single | 1 | Rectifier Diodes | 2A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1000V | 500nA | 1kV | 30A | 2 μs | Standard | 1A | 23pF @ 5V 1MHz | 1000V | 500nA @ 1000V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-60APF10PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishay-vs60apf12m3-datasheets-8018.pdf | TO-247-3 | 3 | 8 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-247AC | 480 ns | Standard | 1kV | 60A | 830A | 1 | 1000V | 100μA @ 1000V | 1.4V @ 60A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5419 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 12 Weeks | 2 | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/411L | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 500V | 80A | 250 ns | Standard | 500V | 3A | 1 | 3A | 1μA @ 500V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| VS-1N3767 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N3767 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 400A | ANODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 3mA | 900V | Standard | 900V | 35A | 1 | 3mA @ 900V | 1.8V @ 110A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5620US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5617us-datasheets-4650.pdf | SQ-MELF, A | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 800V | 30A | 2 μs | Standard | 1A | 500nA @ 800V | 1.3V @ 3A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| 1N6662 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n6663-datasheets-8482.pdf | 2 | 7 Weeks | 2 | no | EAR99 | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | AXIAL | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 500mA | ISOLATED | SILICON | 600V | DO-35 | RECTIFIER DIODE | 0.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40HFL40S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 40A | 1.95V | 420A | CATHODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 420A | 100μA | 400V | 420A | 400V | 200 ns | 200 ns | Standard | 400V | 40A | 1 | 100μA @ 400V | 1.95V @ 40A | -40°C~125°C |
