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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Dual Supply Voltage | Configuration | Case Connection | Drain to Source Voltage (Vdss) | Application | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTXV1N4944 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/359 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n4946-datasheets-5775.pdf | A, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | MIL-19500/359F | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 400V | 15A | 150 ns | Standard | 400V | 1A | 1A | 35pF @ 12V 1MHz | 1μA @ 400V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| IDC73D120T6MX1SA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-idc73d120t6mx1sa2-datasheets-9261.pdf | Die | Lead Free | 1 | EAR99 | 8541.10.00.40 | Halogen Free | YES | UPPER | NO LEAD | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-XUUC-N1 | 1.2kV | SINGLE | 1.2kV | FAST SOFT RECOVERY MEDIUM POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1200V | 26μA | Standard | 1 | 1200V | 26μA @ 1200V | 2.05V @ 150A | 150A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| 3XM2 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | SMD/SMT | 18 Weeks | 3XM2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5623US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5617us-datasheets-4650.pdf | SQ-MELF, A | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 1kV | 30A | 500 ns | Standard | 1A | 15pF @ 12V 1MHz | 1000V | 500nA @ 1000V | 1.6V @ 3A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| 1N5552US/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, E | 2 | Single | D-5B | 1.2V | Standard Recovery >500ns, > 200mA (Io) | 100A | 2μs | Standard | 600V | 1μA @ 600V | 1.2V @ 9A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GATELEAD28134XPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5623 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan1n5617-datasheets-5896.pdf | A, Axial | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | WIRE | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 1kV | 30A | DO-7 | 500 ns | Standard | 1kV | 1A | 1A | 15pF @ 12V 1MHz | 1000V | 500nA @ 1000V | 1.6V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| FR30KR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 30A | 300A | SINGLE | ANODE | 0.46 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 800V | 800V | 500 ns | 500 ns | Standard, Reverse Polarity | 800V | 30A | 1 | 25μA @ 800V | 1V @ 30A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||
| 1N4245 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | Not Applicable | Non-RoHS Compliant | Axial | 2 | 12 Weeks | no | EAR99 | unknown | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | WIRE | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | E-XALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200V | 2μs | Standard | 25A | 1A | 200V | 1μA @ 200V | 1.2V @ 1A | 1A DC | |||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5806US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/477F | END | WRAP AROUND | 2 | Single | 1 | Qualified | 2.5A | 975mV | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 150V | 35A | 25 ns | Standard | 150V | 1A | 1 | 25pF @ 10V 1MHz | 1μA @ 150V | 875mV @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| 1N4249 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | Non-RoHS Compliant | Axial | 2 | 12 Weeks | 2 | no | EAR99 | unknown | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.5V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1000V | 25A | 2μs | Standard | 1A | 1000V | 1μA @ 1000V | 1.2V @ 1A | 1A DC | ||||||||||||||||||||||||||||||||||||||||
| MUR2520R | GeneSiC Semiconductor | $11.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mur2520r-datasheets-1103.pdf | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 4 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 175°C | 1 | O-MUPM-D1 | 500A | SINGLE | ANODE | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 75 ns | Standard, Reverse Polarity | 200V | 25A | 1 | 200V | 10μA @ 50V | 1V @ 25A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| 1N6622US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | Contains Lead | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | 13 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 660V | 20A | 30 ns | Standard | 660V | 1.2A | 1 | 10pF @ 10V 1MHz | 500nA @ 660V | 1.4V @ 1.2A | -65°C~150°C | ||||||||||||||||||||||||||
| FR30JR02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 125°C | 1 | O-MUPM-D1 | 30A | 300A | SINGLE | ANODE | 0.46 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 600V | 600V | 200 ns | 250 ns | Standard, Reverse Polarity | 600V | 30A | 1 | 25μA @ 50V | 1V @ 30A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||
| JAN1N5622US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 100V | 30A | 2 μs | Standard | 1kV | 1A | 1A | 1000V | 500nA @ 1000V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||
| JAN1N5711UR-1 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/444 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | /files/microsemicorporation-jantx1n5711ur1-datasheets-6369.pdf | DO-213AA | 2 | 11 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/444 | END | WRAP AROUND | 2 | Single | 1 | Qualified | 33mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 70V | Schottky | 0.033A | 2pF @ 0V 1MHz | 200nA @ 50V | 1V @ 15mA | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||
| VS-70HFL20S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 70A | 730A | CATHODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 200V | 200 ns | 200 ns | Standard | 200V | 70A | 1 | 100μA @ 200V | 1.85V @ 219.8A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||
| 1N4247 | Semtech Corporation | $23.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | RoHS Compliant | Axial | 2 | 12 Weeks | 2 | no | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Rectifier Diodes | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 150μA | 600V | 25A | 2 μs | Standard | 1A | 1μA @ 600V | 1.2V @ 1A | 1A DC | |||||||||||||||||||||||||||||||||||||||||||
| FR30MR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 30A | 300A | SINGLE | ANODE | 0.46 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 1kV | 1kV | 500 ns | 500 ns | Standard, Reverse Polarity | 1kV | 30A | 1 | 1000V | 25μA @ 800V | 1V @ 30A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||
| 3XM1 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | SMD/SMT | 18 Weeks | 3XM1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4246 | Semtech Corporation | $15.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | RoHS Compliant | Axial | 2 | 12 Weeks | no | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Rectifier Diodes | E-XALF-W2 | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 150μA | 400V | 25A | 2 μs | Standard | 1A | 1μA @ 400V | 1.2V @ 1A | 1A DC | |||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5819UR-1/TR | Microsemi Corporation | $12.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/586 | Surface Mount | Tape & Reel (TR) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5819-datasheets-8782.pdf | DO-213AB, MELF (Glass) | DO-213AB (MELF, LL41) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 70pF @ 5V 1MHz | 45V | 50μA @ 45V | 490mV @ 1A | 1A | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3611 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | Not Applicable | Non-RoHS Compliant | Axial | 2 | 12 Weeks | no | EAR99 | unknown | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200V | 2μs | Standard | 1A | 200V | 500nA @ 200V | 1.1V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-71HFR80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB | 1.25kA | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 9mA | 800V | Standard, Reverse Polarity | 800V | 70A | 800V | 9mA @ 800V | 1.35V @ 220A | 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4248 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | Not Applicable | Non-RoHS Compliant | Axial | 2 | 12 Weeks | no | EAR99 | unknown | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | WIRE | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | E-XALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 800V | 2μs | Standard | 25A | 1A | 800V | 1μA @ 800V | 1.2V @ 1A | 1A DC | |||||||||||||||||||||||||||||||||||||||||
| CDLL5711/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | Non-RoHS Compliant | DO-213AA | 12 Weeks | DO-213AA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 2pF @ 0V 1MHz | 50V | 200nA @ 50V | 1V @ 15mA | 33mA | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5806 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemi-jantxv1n5806-datasheets-1101.pdf | A, Axial | Contains Lead | 2 | 14 Weeks | 2 | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | Single | 1 | Qualified | 975mV | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 150V | 35A | 25 ns | Standard | 150V | 1A | 1 | 1A | 25pF @ 10V 1MHz | 1μA @ 150V | 875mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| JAN1N5620US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5617us-datasheets-4650.pdf | SQ-MELF, A | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/427 | END | WRAP AROUND | 2 | Single | 1 | Qualified | O-LELF-R2 | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 800V | 30A | 2 μs | Standard | 1A | 500nA @ 800V | 1.3V @ 3A | 1A | -65°C~200°C | |||||||||||||||||||||||||||||||||||
| JANTXV1N5186 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/424 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5186-datasheets-4010.pdf | B, Axial | 2 | 14 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | MIL-19500/424A | WIRE | 2 | Single | 1 | Qualified | O-XALF-W2 | 3A | ISOLATED | FAST RECOVERY POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2μA | 100V | 80A | 150 ns | Standard | 1 | 3A | 2μA @ 100V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| 1N5554US/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, E | D-5B | Standard Recovery >500ns, > 200mA (Io) | 2μs | Standard | 1000V | 1μA @ 1000V | 1.3V @ 9A | 3A | -65°C~175°C |
