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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTXV1N5186 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/424 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5186-datasheets-4010.pdf | B, Axial | 2 | 14 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | MIL-19500/424A | WIRE | 2 | Single | 1 | Qualified | O-XALF-W2 | 3A | ISOLATED | FAST RECOVERY POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2μA | 100V | 80A | 150 ns | Standard | 1 | 3A | 2μA @ 100V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| 1N5554US/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, E | D-5B | Standard Recovery >500ns, > 200mA (Io) | 2μs | Standard | 1000V | 1μA @ 1000V | 1.3V @ 9A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S70JR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s70jr-datasheets-1080.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 70A | 1.25kA | SINGLE | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 600V | 600V | Standard, Reverse Polarity | 600V | 70A | 1 | 10μA @ 100V | 1.1V @ 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||
| CDLL5712 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n5711ur1-datasheets-6369.pdf | DO-213AA | 2 | 10 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | 75mA | 1V | ISOLATED | 250 °C/W | Small Signal =< 200mA (Io), Any Speed | SILICON | 20V | Schottky | 20V | 75mA | 0.075A | 2pF @ 0V 1MHz | 150nA @ 16V | 1V @ 35mA | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||
| VS-70HFL20S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 70A | 1.85V | 730A | CATHODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 730A | 100μA | 200V | 200V | 500 ns | 500 ns | Standard | 200V | 70A | 1 | 100μA @ 200V | 1.85V @ 219.8A | -40°C~125°C | |||||||||||||||||||||||||||||||||
| FR30D02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 75°C | 0°C | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 14 | Straight | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 2.54mm | 30A | 300A | SINGLE | CATHODE | 0.46 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 200V | 200V | 200 ns | 200 ns | Standard | 200V | 30A | 1 | 25μA @ 50V | 1V @ 30A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||
| 1N5712UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n5711ur1-datasheets-6369.pdf | 10 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N914UR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/116 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n914ur-datasheets-0276.pdf | DO-213AA | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/116L | END | WRAP AROUND | 1N914 | Single | 1 | Qualified | 1.2V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 500nA | 75V | 2A | 5 ns | Standard | 75V | 200mA | 0.075A | 4pF @ 0V 1MHz | 500nA @ 75V | 1.2V @ 50mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| FR30K05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 30A | 300A | SINGLE | CATHODE | 0.46 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 800V | 800V | 500 ns | 500 ns | Standard | 800V | 30A | 1 | 25μA @ 800V | 1V @ 30A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6642US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6643us-datasheets-0665.pdf | SQ-MELF, D | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | END | WRAP AROUND | 2 | Single | 1 | Qualified | 300mA | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75V | 2.5A | 5 ns | Standard | 75V | 300mA | 0.3A | 40pF @ 0V 1MHz | 500nA @ 75V | 1.2V @ 100mA | -65°C~175°C | |||||||||||||||||||||||||||||||||
| VS-70HFLR20S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 70A | 730A | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 730A | 100μA | 200V | 730A | 200V | 200 ns | 200 ns | Standard, Reverse Polarity | 200V | 70A | 1 | 100μA @ 200V | 1.85V @ 219.8A | -40°C~125°C | |||||||||||||||||||||||||||||||||
| JAN1N3595AUS | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/241 | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 3μs | Standard | 125V | 2nA @ 125V | 920mV @ 100mA | 150mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HFR140 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.4kV | Standard, Reverse Polarity | 1.4kV | 85A | 1800A | 1 | 1400V | 4.5mA @ 1400V | 1.4V @ 267A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
| JANTXV1N5804 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemi-jantxv1n5804-datasheets-1071.pdf | A, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | Single | 1 | Qualified | 975mV | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 100V | 35A | 25 ns | Standard | 100V | 1A | 1A | 25pF @ 10V 1MHz | 1μA @ 100V | 875mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| VS-71HFR160 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB | 1.25kA | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 4.5mA | 1.6kV | Standard, Reverse Polarity | 1.6kV | 70A | 1600V | 4.5mA @ 1600V | 1.46V @ 220A | 70A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR30B02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 75°C | 0°C | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 12 | Straight | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 2.54mm | 30A | 300A | SINGLE | CATHODE | 0.46 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 100V | 100V | 200 ns | 200 ns | Standard | 100V | 30A | 1 | 25μA @ 50V | 1V @ 30A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||
| JANTX1N645-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/240 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6451-datasheets-0792.pdf | DO-204AH, DO-35, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 400mA | 1V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 0.5W | 225V | 5A | Standard | 0.4A | 50nA @ 225V | 1V @ 400mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| VS-72HA80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-203AB, DO-5, Stud | 17 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard | 800V | 70A | 800V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40HFLR80S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 40A | 420A | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 420A | 100μA | 800V | 420A | 800V | 500 ns | 500 ns | Standard, Reverse Polarity | 800V | 40A | 1 | 100μA @ 800V | 1.95V @ 40A | -40°C~125°C | |||||||||||||||||||||||||||||||||||
| JANTX1N5819UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/586 | Surface Mount | Surface Mount | Bag | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5819-datasheets-8782.pdf | DO-213AB, MELF (Glass) | Contains Lead | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | Single | DO-213AB (MELF, LL41) | 1A | 800mV | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 45V | Schottky | 70pF @ 5V 1MHz | 45V | 50μA @ 45V | 490mV @ 1A | 1A | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5551 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5554-datasheets-7989.pdf | B, Axial | Contains Lead | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 5A | 1.2V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 400V | 100A | 2 μs | Standard | 400V | 5A | 1 | 5A | 1μA @ 400V | 1.2V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| VS-41HFR140 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 160°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-H1 | 595A | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.4kV | Standard, Reverse Polarity | 1.4kV | 40A | 1 | 1400V | 4.5mA @ 1400V | 1.5V @ 125A | -65°C~160°C | |||||||||||||||||||||||||||||||||||||||||
| JANTX1N3957 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/228 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | /files/microsemicorporation-1n3611-datasheets-7844.pdf | A, Axial | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.1V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 30A | DO-41 | Standard | 1kV | 1A | 1A | 1000V | 1μA @ 1000V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| 1N6625 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1A | 1.95V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.1kV | 15A | 60 ns | Standard | 1.1kV | 1A | 1A | 10pF @ 10V 1MHz | 1100V | 1μA @ 1100V | 1.75V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||
| S70YR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s70yr-datasheets-1065.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 70A | 1.25kA | SINGLE | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.6kV | 1.6kV | Standard, Reverse Polarity | 1.6kV | 70A | 1 | 1600V | 10μA @ 100V | 1.1V @ 70A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N4942 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/359 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n4946-datasheets-5775.pdf | A, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | MIL-19500/359F | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 15A | 150 ns | Standard | 200V | 1A | 1A | 45pF @ 12V 1MHz | 1μA @ 200V | 1.3V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| S70Y | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s70y-datasheets-1067.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 70A | 1.25kA | SINGLE | CATHODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.6kV | 1.6kV | Standard | 1.6kV | 70A | 1 | 1600V | 10μA @ 100V | 1.1V @ 70A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-86HF20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2004 | /files/vishaysemiconductordiodesdivision-vs86hf80-datasheets-9123.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.8kA | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.8kA | 9mA | 200V | 1.8kA | 200V | Standard | 200V | 85A | 1 | 9mA @ 200V | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||
| S70GR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s70gr-datasheets-1070.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 70A | 1.25kA | SINGLE | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 400V | Standard, Reverse Polarity | 400V | 70A | 1 | 10μA @ 100V | 1.1V @ 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||
| 1N6626US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6628us-datasheets-2277.pdf | SQ-MELF, A | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | Yes | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.75A | 1.5V | ISOLATED | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 220V | 75A | 30 ns | Standard | 220V | 1.75A | 1 | 4A | 40pF @ 10V 1MHz | 2μA @ 220V | 1.35V @ 2A | -65°C~150°C |
