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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Contact Resistance | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| P600K-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-p600je354-datasheets-7002.pdf | P600, Axial | 2 | 18 Weeks | 600 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | P600K | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 22A | 1.3V | 400A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 800V | 400A | 800V | 2.5 μs | 2.5 μs | Standard | 800V | 6A | 1 | 6A | 150pF @ 4V 1MHz | 5μA @ 800V | 900mV @ 6A | -50°C~150°C | |||||||||||||||||||||||||||||||
| VS-50PF40 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs50pf80-datasheets-5673.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 50A | 1.4V | 830A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 830A | 9mA | 400V | 830A | 400V | Standard | 400V | 50A | 1 | 1.4V @ 125A | -55°C~180°C | ||||||||||||||||||||||||||||||||||||||||
| VS-5EWH06FNTRR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs5ewh06fntrm3-datasheets-2130.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 5A | CATHODE | HFRHP | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 70A | TO-252AA | 25 ns | Standard | 600V | 5A | 1 | 5A | 5μA @ 600V | 1.85V @ 5A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| JANTX1N4246 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/286 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n4248-datasheets-8351.pdf | A, Axial | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 400V | 25A | 5 μs | Standard | 400V | 1A | 1A | 1μA @ 400V | 1.3V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| VIT760-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vbt760e34w-datasheets-9800.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSIP-T3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 60V | 7.5A | 100A | 1 | 60V | 700μA @ 60V | 800mV @ 7.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-1N3208R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-vs1n3210-datasheets-2347.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N3208 | Single | 1 | O-MUPM-D1 | 15A | 1.5V | 297A | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 297A | 10mA | 50V | 50V | Standard, Reverse Polarity | 50V | 15A | 1 | 10mA @ 50V | 1.5V @ 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| S16MR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s16mr-datasheets-9921.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 16A | 370A | SINGLE | ANODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 1kV | Standard, Reverse Polarity | 1kV | 16A | 1 | 1000V | 10μA @ 50V | 1.1V @ 16A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-6FR120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs6f60-datasheets-2910.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 6A | 1.1V | 167A | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12mA | 1.2kV | 167A | 1.2kV | Standard, Reverse Polarity | 1.2kV | 6A | 1 | 6A | 1200V | 12mA @ 1200V | 1.1V @ 19A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| VS-80PF120W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs80pfr80-datasheets-2447.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | WIRE | Single | 1 | O-MUPM-W1 | 80A | 1.57kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1.2kV | 1.57kA | 1.2kV | Standard | 1.2kV | 80A | 1 | 1200V | 1.4V @ 220A | -55°C~180°C | |||||||||||||||||||||||||||||||||||||||||||
| BYW83-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-byw82tr-datasheets-2018.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | EAR99 | Silver, Tin | unknown | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | Single | 1 | Rectifier Diodes | E-LALF-W2 | 3A | 1V | 100A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 400V | 100A | 400V | 7.5 μs | 6 ns | Avalanche | 400V | 3A | 1 | 3A | 60pF @ 4V 1MHz | 1μA @ 400V | 1V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| VS-50PFR80W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs50pf80-datasheets-5673.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | WIRE | Single | 1 | O-MUPM-W1 | 50A | 830A | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 800V | 830A | 800V | Standard, Reverse Polarity | 800V | 50A | 1 | 1.4V @ 125A | -55°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||
| RBR5L60ATE25 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2004 | DO-214AC, SMA | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | DUAL | C BEND | 260 | 150°C | 10 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | Schottky | 60V | 5A | 50A | 1 | 5A | 60V | 250μA @ 60V | 550mV @ 5A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-5EWL06FNTRL-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs5ewl06fntrm3-datasheets-6204.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 5A | CATHODE | HYPER ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 80A | TO-252AA | 25 ns | Standard | 600V | 5A | 1 | 5A | 5μA @ 600V | 1.85V @ 5A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| VS-5EWX06FNTRL-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs5ewx06fnm3-datasheets-2779.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 5A | CATHODE | HYPERFAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 600V | 50A | TO-252AA | 480 ns | Standard | 600V | 5A | 1 | 5A | 20μA @ 600V | 2.9V @ 5A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| RBR5L40ATE25 | ROHM Semiconductor | $2.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | DO-214AC, SMA | 2 | 6 Weeks | yes | HIGH RELIABILITY | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | Schottky | 40V | 5A | 50A | 1 | 5A | 40V | 200μA @ 40V | 530mV @ 5A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-25FR100 |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR6JR02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 135A | SINGLE | ANODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 600V | 600V | 250 ns | 250 ns | Standard, Reverse Polarity | 600V | 6A | 1 | 6A | 25μA @ 50V | 1.4V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-90EPF12L-M3 | Vishay Semiconductor Diodes Division | $6.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs90epf12lm3-datasheets-6972.pdf | TO-247-2 | 12 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | Standard | 1200V | 100μA @ 1200V | 1.38V @ 90A | 90A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYW73-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-byw76tap-datasheets-5932.pdf | SOD-64, Axial | 2 | 17 Weeks | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 3A | 100A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 300V | 100A | 300V | 200 ns | 200 ns | Avalanche | 300V | 3A | 1 | 3A | 5μA @ 300V | 1.1V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||
| BYW73-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw76tap-datasheets-5932.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 3A | 1.1V | 100A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 300V | 100A | 300V | 200 ns | 200 ns | Avalanche | 300V | 3A | 1 | 3A | 5μA @ 300V | 1.1V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||
| VS-1N3211 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n3210-datasheets-2347.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N3211 | Single | 1 | O-MUPM-D1 | 15A | 1.5V | 297A | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 250A | 10mA | 300V | 300V | Standard | 300V | 15A | 1 | 10mA @ 300V | 1.5V @ 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| VS-1N3881R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1N3881 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 90A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 15μA | 200V | 300 ns | 300 ns | Standard, Reverse Polarity | 200V | 6A | 1 | 6A | 15μA @ 200V | 1.4V @ 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| FR6AR02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 135A | SINGLE | ANODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 50V | 50V | 200 ns | 200 ns | Standard, Reverse Polarity | 50V | 6A | 1 | 6A | 25μA @ 50V | 1.4V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3879 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | DO-203AA, DO-4, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1N3879 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 6A | 1.4V | 90A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 15μA | 50V | 50V | 300 ns | 300 ns | Standard | 50V | 6A | 1 | 6A | 15μA @ 50V | 1.4V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||
| IDH12SG60CXKSA2 | Infineon Technologies | $5.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-idh12sg60cxksa2-datasheets-6979.pdf | TO-220-2 | 2 | 18 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 600V | TO-220AC | 0ns | Silicon Carbide Schottky | 51A | 1 | 12A | 310pF @ 1V 1MHz | 600V | 100μA @ 600V | 2.1V @ 12A | 12A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| FR6DR02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud, Through Hole | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Solder | 75°C | 0°C | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 8 | Straight | EAR99 | 6mOhm | UPPER | 1 | O-MUPM-D1 | 3.96mm | 6A | 135A | SINGLE | ANODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 200V | 200V | 200 ns | 200 ns | Standard, Reverse Polarity | 200V | 6A | 1 | 6A | 25μA @ 50V | 1.4V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
| VS-50PFR40 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs50pf80-datasheets-5673.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 50A | 1.4V | 830A | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 830A | 9mA | 400V | 400V | Standard, Reverse Polarity | 400V | 50A | 1 | 1.4V @ 125A | -55°C~180°C | ||||||||||||||||||||||||||||||||||||||||
| BYT77-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byt78tr-datasheets-5104.pdf | SOD-64, Axial | 2 | 17 Weeks | 2 | yes | EAR99 | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | 1.2V | 100A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 800V | 100A | 800V | 250 ns | 250 ns | Avalanche | 800V | 3A | 1 | 3A | 5μA @ 800V | 1.2V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| VS-12FL60S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1 | Single | 1 | O-MUPM-D1 | 12A | 1.4V | 180A | CATHODE | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 50μA | 600V | 180A | 600V | 200 ns | 200 ns | Standard | 600V | 12A | 1 | 50μA @ 600V | 1.4V @ 12A | -65°C~150°C | |||||||||||||||||||||||||||||||||
| BYT56J-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt56mtr-datasheets-9297.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | 2 | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 3A | 1.4V | 80A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 80A | 600V | 100 ns | 100 ns | Avalanche | 600V | 3A | 1 | 1.5A | 5μA @ 600V | 1.4V @ 3A | -55°C~175°C |
