Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Capacitance | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SF5400-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-sf5408tr-datasheets-5371.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 3A | 1.1V | 150A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 150A | 50V | 50 ns | 50 ns | Standard | 50V | 3A | 1 | 3A | 5μA @ 50V | 1.1V @ 3A | -55°C~175°C | |||||||||||||||||||||||||
BYT56K-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-byt56mtr-datasheets-9297.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | yes | EAR99 | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 2 | Single | 1 | Rectifier Diodes | E-LALF-W2 | 3A | 80A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 800V | 80A | 800V | 100 ns | 100 ns | Avalanche | 800V | 3A | 1 | 1.5A | 5μA @ 800V | 1.4V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||
SF5401-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-sf5408tr-datasheets-5371.pdf | SOD-64, Axial | 2 | 17 Weeks | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 3A | 150A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 150A | 100V | 50 ns | 50 ns | Standard | 100V | 3A | 1 | 3A | 5μA @ 100V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||
MBR10100MFST3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | /files/onsemiconductor-nrvb10100mfst1g-datasheets-2923.pdf | 8-PowerTDFN, 5 Leads | 5 | 9 Weeks | yes | EAR99 | LOW POWER LOSS | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PDSO-F5 | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 100V | 150A | Schottky | 100V | 10A | 1 | 100μA @ 100V | 950mV @ 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||
SBRT20U60SP5-13D | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbrt20u60sp57d-datasheets-7286.pdf | PowerDI™ 5 | 3 | 24 Weeks | 95.991485mg | 5 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PDSO-F3 | 480mV | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 320A | 80mA | 60V | Super Barrier | 60V | 20A | 1 | 400μA @ 60V | 530mV @ 20A | -55°C~150°C | ||||||||||||||||||||||||||||||||
V30K45-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v30k45m3h-datasheets-5794.pdf | 8-PowerTDFN | 10 Weeks | FlatPAK (5x6) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 4000pF @ 4V 1MHz | 45V | 2mA @ 45V | 630mV @ 30A | 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
V15P6-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15p6m386a-datasheets-9280.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3600μA | TO-277A | Schottky | 60V | 4.8A | 220A | 1 | 60V | 3.6mA @ 60V | 620mV @ 7.5A | -40°C~150°C | ||||||||||||||||||||||||||||||||||
MBRF1045 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mbrf10200c0g-datasheets-2637.pdf | TO-220-2 Full Pack | 10 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 100μA @ 45V | 700mV @ 10A | 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYW85-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-byw82tr-datasheets-2018.pdf | SOD-64, Axial | 2 | 17 Weeks | 2 | EAR99 | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | Single | 1 | Rectifier Diodes | 3A | 1V | 100A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 800V | 100A | 800V | 7.5 μs | 6 ns | Avalanche | 800V | 3A | 1 | 3A | 60pF @ 4V 1MHz | 1μA @ 800V | 1V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||
SBR15U50SP5Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SBR® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | PowerDI™ 5 | 16 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Super Barrier | 400pF @ 25V | 50V | 500μA @ 50V | 520mV @ 15A | 15A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYW75TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw76tap-datasheets-5932.pdf | SOD-64, Axial | 2 | 17 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | Single | 1 | 3A | 1.1V | 100A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 500V | 100A | 500V | 200 ns | 200 ns | Avalanche | 500V | 3A | 1 | 3A | 5μA @ 500V | 1.1V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||
CDBZ31060-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/comchiptechnology-cdbz31060hf-datasheets-7076.pdf | TO-277, 3-PowerDFN | 10 Weeks | yes | 260 | Single | 30 | 10A | 750mV | Fast Recovery =< 500ns, > 200mA (Io) | 180A | 15mA | 60V | Schottky | 60V | 10A | 100μA @ 60V | 750mV @ 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
SS10P6HM3_A/I | Vishay Semiconductor Diodes Division | $0.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss10p6m386a-datasheets-7372.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE , LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 150°C | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | TO-277A | Schottky | 60V | 7A | 280A | 1 | 7A | 560pF @ 4V 1MHz | 60V | 150μA @ 60V | 670mV @ 7A | -55°C~150°C | |||||||||||||||||||||||||||||||||
BYW84-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-byw82tr-datasheets-2018.pdf | 3A | SOD-64, Axial | 40pF | 2 | 17 Weeks | 2 | EAR99 | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | Single | 1 | Rectifier Diodes | 3A | 1V | 100A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 100A | 600V | 7.5 μs | 6 ns | Avalanche | 600V | 3A | 1 | 3A | 60pF @ 4V 1MHz | 1μA @ 600V | 1V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||
MBRB1840TR | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6 Weeks | D2PAK | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 250pF @ 5V 1MHz | 40V | 500μA @ 40V | 580mV @ 18A | 18A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYW74TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw76tap-datasheets-5932.pdf | 3A | SOD-64, Axial | 17 Weeks | unknown | Single | 3A | 1.1V | 100A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 400V | 100A | 400V | 200 ns | 200 ns | Avalanche | 400V | 3A | 5μA @ 400V | 1.1V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
AR4PD-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar4pdm386a-datasheets-6420.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | DUAL | FLAT | AR4PD | 3 | Common Anode | 1 | Rectifier Diodes | 4A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 65A | TO-277A | 140 ns | Avalanche | 200V | 2A | 1 | 2A | 77pF @ 4V 1MHz | 10μA @ 200V | 1.6V @ 4A | 2A DC | -55°C~175°C | ||||||||||||||||||||||||||||||
SBRT15U100SP5-13D | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | /files/diodesincorporated-sbrt15u100sp513-datasheets-2189.pdf | PowerDI™ 5 | 3 | 24 Weeks | 95.991485mg | 5 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PDSO-F3 | 640mV | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 250A | 15mA | 100V | Super Barrier | 100V | 15A | 1 | 200μA @ 100V | 700mV @ 15A | -65°C~150°C | ||||||||||||||||||||||||||||||||
V15PM45HM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15pm45m3h-datasheets-5688.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 3000pF @ 4V 1MHz | 45V | 700μA @ 45V | 600mV @ 15A | 15A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
EL02ZV | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-el02zv-datasheets-7057.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40 ns | Standard | 200V | 1.5A | 25A | 1 | 200V | 50μA @ 200V | 980mV @ 1.5A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
1N1204AR | GeneSiC Semiconductor | $5.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1N1204AR | 200°C | 1 | O-MUPM-D1 | 12A | 240A | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 400V | Standard, Reverse Polarity | 400V | 12A | 1 | 10μA @ 50V | 1.1V @ 12A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||
RBR5L30BTE25 | ROHM Semiconductor | $0.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AC, SMA | 2 | 12 Weeks | yes | HIGH RELIABILITY | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | Schottky | 30V | 5A | 50A | 1 | 5A | 30V | 150μA @ 30V | 490mV @ 5A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||
VS-90APF12L-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs90epf12lm3-datasheets-6972.pdf | TO-247-3 | 12 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | Standard | 1200V | 100μA @ 1200V | 1.38V @ 90A | 90A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYT56J-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt56mtr-datasheets-9297.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 3A | 80A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 80A | 600V | 100 ns | 100 ns | Avalanche | 600V | 3A | 1 | 1.5A | 5μA @ 600V | 1.4V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||
VS-5EWH06FNTRL-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs5ewh06fntrm3-datasheets-2130.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 5A | CATHODE | HFRHP | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 70A | TO-252AA | 25 ns | Standard | 600V | 5A | 1 | 5A | 5μA @ 600V | 1.85V @ 5A | -65°C~175°C | |||||||||||||||||||||||||||||
NRVB830MFST1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2013 | /files/onsemiconductor-mbr830mfst1g-datasheets-5464.pdf | 8-PowerTDFN, 5 Leads | 5 | 5 Weeks | yes | EAR99 | LOW POWER LOSS | not_compliant | e3 | Tin (Sn) | AEC-Q101 | DUAL | FLAT | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PDSO-F5 | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 30V | 150A | Schottky | 30V | 8A | 1 | 8A | 200μA @ 30V | 700mV @ 8A | -40°C~150°C | |||||||||||||||||||||||||||||||||
VS-5EWX06FNTR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vs5ewx06fnm3-datasheets-2779.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 5EWX06 | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 5A | 50A | CATHODE | HYPERFAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 600V | 50A | 600V | TO-252AA | 18 ns | 14 ns | Standard | 600V | 5A | 1 | 5A | 20μA @ 600V | 2.9V @ 5A | -65°C~175°C | |||||||||||||||||||||||||||
BYM36E-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym36etap-datasheets-5834.pdf | 2.9A | SOD-64, Axial | 2 | 17 Weeks | 2 | yes | EAR99 | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 2.9A | 1.78V | 65A | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 65A | 1kV | 150 ns | 150 ns | Avalanche | 1kV | 1.5A | 1 | 1000V | 5μA @ 1000V | 1.78V @ 3A | -55°C~175°C | |||||||||||||||||||||||||
BYW84-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw82tr-datasheets-2018.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | Single | 1 | Rectifier Diodes | 3A | 1V | 100A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 100A | 600V | 7.5 μs | 6 ns | Avalanche | 600V | 3A | 1 | 3A | 60pF @ 4V 1MHz | 1μA @ 600V | 1V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||
VS-5EWL06FNTRR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs5ewl06fntrm3-datasheets-6204.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 5A | CATHODE | HYPER ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 80A | TO-252AA | 145 ns | Standard | 600V | 5A | 1 | 5A | 5μA @ 600V | 1.2V @ 5A | -65°C~175°C |
Please send RFQ , we will respond immediately.