| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HER604G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-her602ga0g-datasheets-7136.pdf | R6, Axial | 10 Weeks | R-6 | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 80pF @ 4V 1MHz | 300V | 10μA @ 300V | 1V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-6EWL06FNTRR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs6ewl06fntrm3-datasheets-4064.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 6A | CATHODE | HYPER ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 80A | TO-252AA | 70 ns | Standard | 600V | 6A | 1 | 6A | 5μA @ 600V | 1.25V @ 6A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| AR4PG-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar4pdm386a-datasheets-6420.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | DUAL | FLAT | AR4PG | 3 | Common Anode | 1 | Rectifier Diodes | 4A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 65A | TO-277A | 140 ns | Avalanche | 400V | 2A | 1 | 2A | 77pF @ 4V 1MHz | 10μA @ 400V | 1.6V @ 4A | 2A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| VS-6EWX06FNTRL-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs6ewx06fntrlm3-datasheets-7154.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 6A | CATHODE | HYPERFAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 600V | 50A | TO-252AA | 21 ns | Standard | 600V | 6A | 1 | 6A | 20μA @ 600V | 3.1V @ 6A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| HER606G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-her602ga0g-datasheets-7136.pdf | R6, Axial | 10 Weeks | R-6 | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | Standard | 65pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.7V @ 6A | 6A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LSM140JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-lsm140je3tr13-datasheets-7098.pdf | DO-214BA | 2 | 24 Weeks | EAR99 | 8541.10.00.80 | DUAL | C BEND | 2 | 150°C | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 40V | 1A | 75A | 1A | 40V | 1mA @ 40V | 580mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| DSS2-60AT2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-dss260at2-datasheets-7119.pdf | TO-226-3, TO-92-3 (TO-226AA) | Lead Free | 3 | EAR99 | 8541.10.00.80 | BOTTOM | 3 | 175°C | 1 | Rectifier Diodes | O-PBCY-T3 | 430mV | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.8W | 60V | Schottky | 60V | 2A | 10A | 1 | 2A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| LSM120JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | 24 Weeks | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V12P15HM3/H | Vishay Semiconductor Diodes Division | $0.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v12p15m3h-datasheets-9314.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 250μA @ 150V | 1.08V @ 12A | 12A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SR815 R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sr806a0g-datasheets-6773.pdf | DO-201AD, Axial | 9 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 100μA @ 150V | 1.02V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VBT5200-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vbt5200e34w-datasheets-7124.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 200V | 5A | 80A | 1 | 5A | 200V | 150μA @ 200V | 1.6V @ 5A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||
| AR4PJ-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar4pdm386a-datasheets-6420.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | DUAL | FLAT | AR4PJ | 3 | Common Anode | 1 | Rectifier Diodes | 4A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 65A | TO-277A | 140 ns | Avalanche | 600V | 2A | 1 | 2A | 77pF @ 4V 1MHz | 10μA @ 600V | 1.6V @ 4A | 2A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| LSM170JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | 24 Weeks | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SL44-E3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sl44e357t-datasheets-5192.pdf | DO-214AB, SMC | 2 | 11 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | SL44 | 2 | Single | 30 | 1 | Rectifier Diodes | 8A | 500mV | 150A | 500μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 40V | 150A | Schottky | 40V | 4A | 1 | 4A | 500μA @ 40V | 440mV @ 4A | -55°C~125°C | ||||||||||||||||||||||||||||||||
| V12P15HM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v12p15m3h-datasheets-9314.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 250μA @ 150V | 1.08V @ 12A | 12A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SR815 A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sr806a0g-datasheets-6773.pdf | DO-201AD, Axial | 9 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 100μA @ 150V | 1.02V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYW74TAP | Vishay Semiconductor Diodes Division | $0.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2007 | /files/vishaysemiconductordiodesdivision-byw76tap-datasheets-5932.pdf | SOD-64, Axial | 2 | 17 Weeks | 2 | EAR99 | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | Single | 1 | 3A | 1.1V | 100A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 100A | 400V | 200 ns | 200 ns | Avalanche | 400V | 3A | 1 | 3A | 5μA @ 400V | 1.1V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||
| LSM160JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | 24 Weeks | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MURF8L60 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-murf8l60c0g-datasheets-7111.pdf | TO-220-2 Full Pack | 10 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | Standard | 600V | 5μA @ 600V | 1.3V @ 8A | 8A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LSM150JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-lsm140je3tr13-datasheets-7098.pdf | DO-214BA | Lead Free | 24 Weeks | 2 | EAR99 | No | 8541.10.00.80 | Single | 1 | Rectifier Diodes | 580mV | Fast Recovery =< 500ns, > 200mA (Io) | 1mA | 50V | 50A | Schottky | 50V | 1A | 75A | 1A | 1mA @ 50V | 580mV @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| CMR1U-01M BK PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmr1u01mtr13pbfree-datasheets-6776.pdf | DO-214AC, SMA | 26 Weeks | compliant | YES | 175°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 100V | 35ns | Standard | 30A | 1A | 100V | 5μA @ 100V | 1V @ 1A | 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LSM130JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | 24 Weeks | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PR6003-T | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/diodesincorporated-pr6005t-datasheets-6865.pdf | R6, Axial | 9.1mm | 9.1mm | 9.1mm | 12 Weeks | 2.099991g | 2 | No | Single | R-6 | 6A | 1.2V | 300A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 200V | 300A | 150 ns | 150 ns | Standard | 200V | 6A | 200V | 140pF @ 4V 1MHz | 200V | 10μA @ 200V | 1.2V @ 6A | 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| UF5405-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uf5408e354-datasheets-1318.pdf | DO-201AD, Axial | 2 | 8 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | UF5405 | 2 | Single | 1 | Rectifier Diodes | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 500V | 150A | 500V | 75 ns | 75 ns | Standard | 500V | 3A | 1 | 3A | 36pF @ 4V 1MHz | 10μA @ 500V | 1.7V @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||
| VS-30APF04PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishay-vs30epf02pbf-datasheets-8414.pdf | TO-247-3 | 3 | 8 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-247AC | Schottky | 400V | 30A | 320A | 1 | 0.16μs | 400V | 100μA @ 400V | 1.41V @ 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| VS-1N3880R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1N3880 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 90A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 15μA | 100V | 300 ns | 300 ns | Standard, Reverse Polarity | 100V | 6A | 1 | 6A | 15μA @ 100V | 1.4V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| V15P6-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15p6m386a-datasheets-9280.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3600μA | TO-277A | Schottky | 60V | 4.8A | 220A | 1 | 60V | 3.6mA @ 60V | 620mV @ 7.5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||
| MBRF1045 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mbrf10200c0g-datasheets-2637.pdf | TO-220-2 Full Pack | 10 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 100μA @ 45V | 700mV @ 10A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYW85-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-byw82tr-datasheets-2018.pdf | SOD-64, Axial | 2 | 17 Weeks | 2 | EAR99 | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | Single | 1 | Rectifier Diodes | 3A | 1V | 100A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 800V | 100A | 800V | 7.5 μs | 6 ns | Avalanche | 800V | 3A | 1 | 3A | 60pF @ 4V 1MHz | 1μA @ 800V | 1V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| SBR15U50SP5Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SBR® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | PowerDI™ 5 | 16 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Super Barrier | 400pF @ 25V | 50V | 500μA @ 50V | 520mV @ 15A | 15A | -65°C~150°C |
Please send RFQ , we will respond immediately.