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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Height | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Voltage Rating (AC) | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| CD1408-R1400 | Bourns Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2006 | /files/bournsinc-cd1408r1200-datasheets-8958.pdf | Chip, Concave Terminals | 2 | 16 Weeks | 2 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | Tin | not_compliant | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | CD1408 | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1A | 1V | 30A | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 400V | 30A | 400V | 3 μs | 3 μs | Standard | 400V | 1A | 1A | 12pF @ 4V 1MHz | 1μA @ 400V | 1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| VS-1N3882R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1N3882 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 90A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 15μA | 300V | 300 ns | 300 ns | Standard, Reverse Polarity | 300V | 6A | 1 | 6A | 15μA @ 300V | 1.4V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5615 | Microsemi Corporation | $6.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Rectifier Diodes | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 200V | 30A | 150 ns | Standard | 200V | 1A | 50A | 1A | 500nA @ 200V | 1.6V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| 1N3880R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | /files/genesicsemiconductor-1n3880r-datasheets-9866.pdf | DO-203AA, DO-4, Stud | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 1N3880R | 150°C | 1 | Rectifier Diodes | 6A | 90A | SINGLE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 15μA | 100V | 100V | 200 ns | 200 ns | Standard, Reverse Polarity | 100V | 6A | 6A | 15μA @ 50V | 1.4V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N486B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n486b-datasheets-6958.pdf | 6 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3882 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1N3882 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 90A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 15μA | 300V | 300 ns | 300 ns | Standard | 300V | 6A | 1 | 6A | 15μA @ 300V | 1.4V @ 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-60APU06HN3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs60epu06hn3-datasheets-5665.pdf | TO-247-3 | 3 | 14 Weeks | EAR99 | unknown | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 600A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 600V | TO-247AC | 81 ns | 45 ns | Standard | 600V | 60A | 1 | 50μA @ 600V | 1.68V @ 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-50PF40W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs50pf80-datasheets-5673.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | WIRE | Single | 1 | O-MUPM-W1 | 50A | 830A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 400V | 830A | 400V | Standard | 400V | 50A | 1 | 1.4V @ 125A | -55°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| BYW83TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-byw82tr-datasheets-2018.pdf | SOD-64, Axial | 17 Weeks | 2 | EAR99 | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | Single | 1 | Rectifier Diodes | 3A | 1V | 100A | Standard Recovery >500ns, > 200mA (Io) | 1μA | 400V | 100A | 400V | 7.5 μs | 6 ns | Avalanche | 400V | 3A | 3A | 60pF @ 4V 1MHz | 1μA @ 400V | 1V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| DPF30P600HR | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | AVALANCHE | TO-247-3 | 3 | 28 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, PD-CASE, SNUBBER DIODE, UL RECOGNIZED | IEC-60747 | NO | SINGLE | 175°C | 2 | R-PSFM-T3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 165W | 600V | 500μA | 35ns | Standard | 200A | 1 | 26pF @ 400V 1MHz | 600V | 500μA @ 600V | 1.62V @ 30A | 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3882R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n3882r-datasheets-9874.pdf | DO-203AA, DO-4, Stud | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 1N3882R | 150°C | 1 | Rectifier Diodes | 6A | 90A | SINGLE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 15μA | 300V | 300V | 200 ns | 200 ns | Standard, Reverse Polarity | 300V | 6A | 6A | 15μA @ 50V | 1.4V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR6JR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2017 | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 135A | SINGLE | ANODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 600V | 600V | 500 ns | 500 ns | Standard, Reverse Polarity | 600V | 6A | 1 | 6A | 25μA @ 50V | 1.4V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| FR6M05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 135A | SINGLE | CATHODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 1kV | 1kV | 500 ns | 500 ns | Standard | 1kV | 6A | 1 | 6A | 1000V | 25μA @ 50V | 1.4V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| S16KR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s16kr-datasheets-9877.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 16A | 370A | SINGLE | ANODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 800V | 800V | Standard, Reverse Polarity | 800V | 16A | 1 | 10μA @ 50V | 1.1V @ 16A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3209 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n3210-datasheets-2347.pdf | DO-203AB, DO-5, Stud | 36.9062mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N3209 | Single | 1 | O-MUPM-D1 | 15A | 1.5V | 297A | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 250A | 10mA | 100V | 297A | 100V | Standard | 100V | 15A | 1 | 10mA @ 100V | 1.5V @ 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| 1N483BUR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n483bur-datasheets-6969.pdf | DO-213AA | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | Rectifier Diodes | 200mA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 225V | 2A | Standard | 225V | 50mA | 25nA @ 225V | 1V @ 100mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| DHG60I600HA | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | AVALANCHE | ROHS3 Compliant | 2013 | /files/ixys-dhg60i600ha-datasheets-9861.pdf | TO-247-2 | Lead Free | 2 | 20 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, PD-CASE, SNUBBER DIODE | IEC-60747 | SINGLE | 150°C | 1 | R-PSFM-T2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 415W | 200μA | 3.3V | Standard | 600V | 60A | 430A | 1 | 0.035μs | 600V | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BYT77-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt78tr-datasheets-5104.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.2V | 100A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 800V | 100A | 800V | 250 ns | 250 ns | Avalanche | 800V | 3A | 1 | 3A | 5μA @ 800V | 1.2V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| VS-1N3881 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | DO-203AA, DO-4, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | UPPER | SOLDER LUG | 1N3881 | Single | 1 | O-MUPM-D1 | 6A | 1.4V | 90A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 15μA | 200V | 90A | 200V | 300 ns | 300 ns | Standard | 200V | 6A | 1 | 6A | 15μA @ 200V | 1.4V @ 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-1N3672A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1206ra-datasheets-0539.pdf | DO-203AA, DO-4, Stud | 13 Weeks | 2 | 1N3672 | Single | DO-203AA | 240A | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | 700μA | 900V | Standard | 900V | 12A | 900V | 700μA @ 900V | 1.35V @ 12A | 12A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4247 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | /files/microsemicorporation-jantx1n4248-datasheets-8351.pdf | A, Axial | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 25A | 5 μs | Standard | 600V | 1A | 1A | 1μA @ 600V | 1.3V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| JANTXV1N4150UR-1 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/231 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | /files/microsemicorporation-1n4150ur1-datasheets-2339.pdf | DO-213AA | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 200mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 100nA | 50V | 4A | 4 ns | Standard | 100nA @ 50V | 1V @ 200mA | 200mA DC | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| DMA50P1600HB | IXYS | $5.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | TO-247-3 | 3 | 20 Weeks | EAR99 | LOW LEAKAGE CURRENT, PD-CASE | 8541.10.00.80 | IEC-60747 | NO | SINGLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PSFM-T3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ANODE AND CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 330W | 1600V | 40μA | TO-247AD | Standard | 595A | 1 | 50A | 19pF @ 400V 1MHz | 1600V | 40μA @ 1600V | 1.3V @ 50A | 50A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3880 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2008 | DO-203AA, DO-4, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1N3880 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 6A | 1.4V | 90A | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 15μA | 100V | 100V | 300 ns | 300 ns | Standard | 100V | 6A | 1 | 6A | 15μA @ 100V | 1.4V @ 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| SICRD101200TR | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 640pF @ 0V 1MHz | 1200V | 100μA @ 1200V | 1.8V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3673RA | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1206ra-datasheets-0539.pdf | DO-203AA, DO-4, Stud | 13 Weeks | 1N3673 | Single | DO-203AA | 240A | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | 600μA | 1kV | Standard, Reverse Polarity | 1kV | 12A | 1000V | 600μA @ 1000V | 1.35V @ 12A | 12A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5618 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Rectifier Diodes | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 600V | 30A | 2 μs | Standard | 600V | 1A | 50A | 1A | 500nA @ 600V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||
| FR6G05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cable, Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 75°C | 0°C | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 7 | Straight | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 3.96mm | 6A | 250V | 135A | SINGLE | CATHODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 400V | 400V | 500 ns | 500 ns | Standard | 400V | 16A | 1 | 25μA @ 50V | 1.4V @ 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| 1N3880 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n3880-datasheets-9855.pdf | DO-203AA, DO-4, Stud | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | 1N3880 | DO-4 | 6A | 90A | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 15μA | 100V | 100V | 200 ns | 200 ns | Standard | 100V | 6A | 100V | 15μA @ 50V | 1.4V @ 6A | 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-90APF06L-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs90apf06lm3-datasheets-6950.pdf | TO-247-3 | 12 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | Standard | 600V | 100μA @ 600V | 1.3V @ 90A | 90A | -40°C~150°C |
