Products
Manufacturer
RFQ
NEWS
ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-8AF1RPP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8af1rpp-datasheets-6845.pdf | B-47 | 15 Weeks | Unknown | 2 | Single | B-47 | 50A | 1.45V | Standard Recovery >500ns, > 200mA (Io) | 100V | Standard, Reverse Polarity | 100V | 50A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N649UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n647ur1-datasheets-6695.pdf | DO-213AA (Glass) | 2 | 6 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | 400mA | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 0.5W | 600V | Standard | 600V | 400mA | 0.4A | 50nA @ 600V | 1V @ 400mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| VS-80APS12PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2008 | /files/vishay-vs80aps08m3-datasheets-8236.pdf | TO-247-3 | 3 | 3 | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | Common Anode | 1 | 80A | 1.17V | 1.45kA | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.45kA | 100μA | 1.2kV | 1.5kA | 1.2kV | TO-247AC | Standard | 1.2kV | 80A | 1 | 1200V | 100μA @ 1200V | 1.17V @ 80A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||
| DSB5818 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | DO-204AL, DO-41, Axial | 2 | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | WIRE | 2 | Single | 1 | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100nA | 30V | Schottky | 30V | 1A | 1A | 100nA @ 30V | 600mV @ 1A | |||||||||||||||||||||||||||||||||||||||||||||
| MMBD3595 | MICROSS/On Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | RoHS Compliant | 4 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N1202AR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1N1202AR | 200°C | 1 | O-MUPM-D1 | 12A | 240A | SINGLE | ANODE | GENERAL PURPOSE | 2 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 200V | DO-4 | Standard, Reverse Polarity | 200V | 12A | 1 | 10μA @ 50V | 1.1V @ 12A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-40EPF12-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs40epf10m3-datasheets-6789.pdf | TO-247-2 | 15.87mm | 20.7mm | 5.31mm | 2 | 12 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT APPLICABLE | Single | NOT APPLICABLE | 1 | 40A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 475A | 100μA | 1.2kV | 450 ns | Standard | 1.2kV | 40A | 1 | 1200V | 100μA @ 1200V | 1.4V @ 40A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||
| MMBD459A | MICROSS/On Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | RoHS Compliant | 4 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSP1665A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Not Applicable | ROHS3 Compliant | 2016 | /files/onsemiconductor-ffsp1665a-datasheets-6808.pdf | TO-220-2 | 2 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | PD-CASE | e3 | Tin (Sn) | NO | SINGLE | 175°C | 1 | R-PSFM-T2 | SINGLE | EFFICIENCY | No Recovery Time > 500mA (Io) | 150W | 650V | 200μA | TO-220AC | 0ns | Silicon Carbide Schottky | 90A | 1 | 16A | 887pF @ 1V 100kHz | 650V | 200μA @ 650V | 1.75V @ 16A | 16A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| 65SPB015A | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | SPD-2A | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 3600pF @ 5V 1MHz | 15V | 20mA @ 15V | 410mV @ 60A | 60A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 69SPB135A | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | SPD-2A | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100pF @ 5V 1MHz | 135V | 100μA @ 135V | 870mV @ 60A | 60A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSH10120A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | RoHS Compliant | 2017 | /files/onsemiconductor-ffsh10120a-datasheets-6816.pdf | TO-247-2 | 2 | 10 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | HIGH RELIABILITY, PD-CASE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | EFFICIENCY | No Recovery Time > 500mA (Io) | 193W | 1200V | 200μA | 0ns | Silicon Carbide Schottky | 90A | 1 | 17A | 612pF @ 1V 100kHz | 1200V | 200μA @ 1200V | 1.75V @ 10A | 17A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| S12DR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s12dr-datasheets-9716.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 280A | SINGLE | ANODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 200V | Standard, Reverse Polarity | 200V | 12A | 1 | 10μA @ 50V | 1.1V @ 12A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-80PF80W | Vishay Semiconductor Diodes Division | $5.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs80pfr80-datasheets-2447.pdf | DO-203AB, DO-5, Stud | 13 Weeks | No | Single | DO-203AB (DO-5) | 80A | 1.57kA | Standard Recovery >500ns, > 200mA (Io) | 9mA | 800V | 1.57kA | 800V | Standard | 800V | 80A | 800V | 1.4V @ 220A | 80A | -55°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N486A | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Non-RoHS Compliant | 1997 | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | METALLURGICALLY BONDED | not_compliant | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | NO | AXIAL | WIRE | NOT SPECIFIED | 2 | 200°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | SILICON | 0.5W | 225V | DO-7 | 1V | RECTIFIER DIODE | 2A | 0.2A | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-100BGQ045HF4 | Vishay Semiconductor Diodes Division | $5.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Screw, Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs100bgq045hf4-datasheets-6824.pdf | PowerTab® | 1 | 12 Weeks | 2 | EAR99 | No | UNSPECIFIED | Single | 1 | R-PSFM-X1 | 770mV | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 45V | 4.4kA | 1000μA | Schottky | 45V | 100A | 4400A | 1 | 2700pF @ 5V 1MHz | 1mA @ 45V | 770mV @ 100A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| S12M | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s12m-datasheets-9704.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 280A | SINGLE | CATHODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 1kV | Standard | 1kV | 12A | 1 | 1000V | 10μA @ 50V | 1.1V @ 12A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| 1N5617E3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5617-datasheets-5896.pdf | A, Axial | 7 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | Standard | 35pF @ 12V 1MHz | 400V | 500nA @ 400V | 800mV @ 3A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMA30P1600HR | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | TO-247-3 | 3 | 28 Weeks | EAR99 | LOW LEAKAGE CURRENT, PD-CASE, UL RECOGNIZED | 8541.10.00.80 | IEC-60747 | NO | SINGLE | 175°C | 2 | R-PSFM-T3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 115W | 1600V | 40μA | Standard | 275A | 1 | 30A | 10pF @ 400V 1MHz | 1600V | 40μA @ 1600V | 1.28V @ 30A | 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-100BGQ100HF4 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Screw, Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs100bgq100hf4-datasheets-6826.pdf | PowerTab® | 1 | 12 Weeks | 2 | EAR99 | No | UNSPECIFIED | Single | 1 | Rectifier Diodes | R-PSFM-X1 | 1.08V | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 6.3kA | 300μA | Schottky | 30V | 100A | 6300A | 1 | 2.4mA @ 30V | 630mV @ 100A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| S12K | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | /files/genesicsemiconductor-s12k-datasheets-9705.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 280A | SINGLE | CATHODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 800V | 800V | Standard | 800V | 12A | 1 | 10μA @ 50V | 1.1V @ 12A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N485BUR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n485bur-datasheets-6827.pdf | DO-213AA | 17 Weeks | 2 | EAR99 | No | 8541.10.00.70 | Single | 1 | Rectifier Diodes | 200mA | Small Signal =< 200mA (Io), Any Speed | 180V | 2A | Standard | 180V | 100mA | 25nA @ 180V | 1V @ 100mA | 100mA DC | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| S12MR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s12mr-datasheets-9706.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 280A | SINGLE | ANODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 1kV | Standard, Reverse Polarity | 1kV | 12A | 1 | 1000V | 10μA @ 50V | 1.1V @ 12A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| DMA50P1200HB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | TO-247-3 | 3 | 20 Weeks | EAR99 | LOW LEAKAGE CURRENT, PD-CASE | 8541.10.00.80 | IEC-60747 | NO | SINGLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PSFM-T3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ANODE AND CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 330W | 1200V | 40μA | TO-247AD | Standard | 595A | 1 | 50A | 19pF @ 400V 1MHz | 1200V | 40μA @ 1200V | 1.3V @ 50A | 50A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| S12Q | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s12q-datasheets-9707.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 280A | SINGLE | CATHODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.2kV | 1.2kV | Standard | 1.2kV | 12A | 1 | 1200V | 10μA @ 50V | 1.1V @ 12A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| S12QR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s12qr-datasheets-9684.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 280A | SINGLE | ANODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.2kV | 1.2kV | Standard, Reverse Polarity | 1.2kV | 12A | 1 | 1200V | 10μA @ 50V | 1.1V @ 12A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-1N3624R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1206ra-datasheets-0539.pdf | DO-203AA, DO-4, Stud | 13 Weeks | DO-203AA (DO-4) | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | 700V | 12A | 700V | 900μA @ 700V | 1.35V @ 12A | 12A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S6MR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s6mr-datasheets-9688.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 167A | SINGLE | ANODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 1kV | Standard, Reverse Polarity | 1kV | 6A | 1 | 6A | 1000V | 10μA @ 100V | 1.1V @ 6A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| S12J | GeneSiC Semiconductor | $5.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s12j-datasheets-9689.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 280A | SINGLE | CATHODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 600V | 600V | Standard | 600V | 12A | 1 | 10μA @ 50V | 1.1V @ 12A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-40EPF10-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs40epf10m3-datasheets-6789.pdf | TO-247-2 | 15.87mm | 20.7mm | 5.31mm | 2 | 12 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT APPLICABLE | Single | NOT APPLICABLE | 1 | 40A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 475A | 100μA | 1kV | 450 ns | 450 ns | Standard | 1kV | 40A | 1 | 1000V | 100μA @ 1000V | 1.4V @ 40A | -40°C~150°C |
