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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Test Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-6FR20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs6f60-datasheets-2910.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 167A | ANODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12mA | 200V | Standard, Reverse Polarity | 200V | 6A | 1 | 6A | 12mA @ 200V | 1.1V @ 19A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-6FR80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs6f60-datasheets-2910.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 167A | ANODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12mA | 800V | Standard, Reverse Polarity | 800V | 6A | 1 | 6A | 12mA @ 800V | 1.1V @ 19A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| JAN1N914UR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/116 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n914ur-datasheets-0276.pdf | DO-213AA | 2 | 14 Weeks | 2 | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/116L | END | WRAP AROUND | Single | 1 | Qualified | 1.2V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 500nA | 75V | 2A | 5 ns | Standard | 0.075A | 4pF @ 0V 1MHz | 500nA @ 75V | 1.2V @ 50mA | 200mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| DMA30P1600HB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | TO-247-3 | 20 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | Standard Recovery >500ns, > 200mA (Io) | Standard | 11pF @ 400V 1MHz | 1600V | 40μA @ 1600V | 1.26V @ 30A | 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N3595-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/241 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n35951-datasheets-6364.pdf | DO-204AH, DO-35, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 150mA | 1V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1nA | 125V | 4A | 3 μs | Standard | 0.15A | 1nA @ 125V | 1V @ 200mA | 150mA DC | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| 1N647UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n647ur1-datasheets-6695.pdf | DO-213AA (Glass) | 2 | 6 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | MIL | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 400mA | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 0.5W | 50nA | 400V | 5A | Standard | 400V | 400mA | 0.4A | 50nA @ 400V | 1V @ 400mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| SICRB10650CTTR | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 650V | 60μA @ 650V | 1.7V @ 5A | 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-6F40 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs6f60-datasheets-2910.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 6A | 167A | CATHODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12mA | 400V | Standard | 400V | 6A | 1 | 6A | 12mA @ 400V | 1.1V @ 19A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-1N1205A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1206ra-datasheets-0539.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Unknown | 2 | 1N1205 | Single | DO-203AA | 12A | 1.35V | 240A | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | 240A | 1.25mA | 500V | 500V | Standard | 500V | 12A | 500V | 1.25mA @ 500V | 1.35V @ 12A | 12A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-75EPU12LHN3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Through Hole | Tube | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs75epu12lhn3-datasheets-6701.pdf | TO-247-2 | 14 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 265ns | Standard | 1200V | 420μA @ 1200V | 2.55V @ 75A | 75A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSB10120A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | /files/onsemiconductor-ffsb10120a-datasheets-6703.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | yes | HIGH RELIABILITY, PD-CASE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | 175°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 283W | 1200V | 200μA | 1200V | 0ns | Silicon Carbide Schottky | 90A | 1 | 21A | 612pF @ 1V 100kHz | 1200V | 200μA @ 1200V | 1.75V @ 10A | 21A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N4245 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/286 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n4248-datasheets-8351.pdf | A, Axial | Contains Lead | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | e0 | Tin/Lead (Sn/Pb) | 2 | Single | Qualified | 1.3V | Standard Recovery >500ns, > 200mA (Io) | 1μA | 200V | 25A | 5 μs | Standard | 200V | 1A | 1μA @ 200V | 1.3V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-HFA06PB120PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Radial, Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishay-vshfa06pb120pbf-datasheets-9626.pdf | TO-247-2 | 15.9mm | 20.7mm | 5.3mm | 2 | 13 Weeks | 2 | EAR99 | LOW NOISE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT APPLICABLE | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | 8A | 3.9V | 80A | CATHODE | EFFICIENCY | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 5μA | 1.2kV | 80A | 1.2kV | 130 ns | 130 ns | Standard | 1.2kV | 6A | 1 | 6A | 1200V | 5μA @ 1200V | 3V @ 6A | -55°C~150°C | ||||||||||||||||||||||||||||||
| VS-12FR80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs12fr120-datasheets-0536.pdf | DO-203AA, DO-4, Stud | 12.69mm | 31.8mm | 11mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 12FR80 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 12A | 1.26V | 280A | ANODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 280A | 12mA | 800V | 370A | 800V | Standard, Reverse Polarity | 800V | 12A | 1 | 12mA @ 800V | 1.26V @ 38A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| VS-60EPS16PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2008 | /files/vishay-vs60eps16pbf-datasheets-9628.pdf | TO-247-2 | 2 | 8 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT APPLICABLE | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | 60A | 1.07V | 1.1kA | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 950A | 100μA | 1.6kV | 1.6kV | Standard | 1.6kV | 60A | 1 | 1600V | 100μA @ 1600V | 1V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| 1N5617C.TR | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | Not Applicable | Axial | 12 Weeks | 1N5617 | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | Standard | 27pF @ 5V 1MHz | 400V | 500nA @ 400V | 1.2V @ 1A | 2A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DNA30E2200PC-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-dna30e2200pc-datasheets-6408.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | ANODE | HIGH VOLTAGE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 210W | 40μA | Standard | 2.2kV | 30A | 340A | 1 | 7pF @ 700V 1MHz | 2200V | 40μA @ 2200V | 1.26V @ 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-30APF06-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishay-vs30epf02pbf-datasheets-8414.pdf | TO-247-3 | 3 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-247AC | 160 ns | Standard | 600V | 30A | 320A | 1 | 600V | 100μA @ 600V | 1.41V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| 1N484B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n482b-datasheets-6670.pdf | DO-204AH, DO-35, Axial | 17 Weeks | DO-35 | Small Signal =< 200mA (Io), Any Speed | Standard | 125V | 25nA @ 125V | 1V @ 100mA | 200mA | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-16F80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 1998 | /files/vishaysemiconductordiodesdivision-vs16fr60-datasheets-2233.pdf | DO-203AA, DO-4, Stud | 12.69mm | 31.8mm | 11mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 16A | 1.23V | 370A | CATHODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 370A | 12mA | 800V | 370A | 800V | Standard | 800V | 16A | 1 | 12mA @ 800V | 1.23V @ 50A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| DPG30P400PJ | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | ISOPLUS220™ | 20 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | Standard | 46pF @ 200V 1MHz | 400V | 1μA @ 400V | 1.35V @ 30A | 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PF170 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | Axial | 18 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | Standard | 16kV | 3mA | 4pF @ 5V 1MHz | 16000V | 100nA @ 16000V | 52V @ 20mA | 3mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYC100W-1200PQ | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EEPP™ | Through Hole | Not Applicable | https://pdf.utmel.com/r/datasheets/weensemiconductors-byc100w1200pq-datasheets-6692.pdf | TO-247-2 | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | Standard | 1200V | 250μA @ 1200V | 3.3V @ 100A | 100A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N482B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | /files/microsemicorporation-1n482b-datasheets-6670.pdf | DO-204AH, DO-35, Axial | 2 | 17 Weeks | no | EAR99 | 8541.10.00.70 | e0 | TIN LEAD | NO | WIRE | NOT SPECIFIED | 200°C | NOT SPECIFIED | 1 | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.25W | Standard | 0.2A | 30V | 25nA @ 30V | 1V @ 100mA | 200mA | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30D40SG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | 400V | 30A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | Standard | Single | D3 [S] | 30A | 30A | 1.5V | Fast Recovery =< 500ns, > 200mA (Io) | 250μA | 400V | 320A | 55 ns | Standard | 200V | 45A | 400V | 250μA @ 400V | 1.5V @ 30A | 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N457A | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1999 | /files/microsemicorporation-1n458a-datasheets-1107.pdf | DO-204AH, DO-35, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 225mA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 70V | DO-7 | Standard | 70V | 150mA | 0.075A | 1μA @ 70V | 1V @ 100mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| IDH09SG60CXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/infineontechnologies-idh09sg60cxksa2-datasheets-6673.pdf | TO-220-2 | 2 | 18 Weeks | No SVHC | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | NO | Single | 1 | 9A | 2.1V | 49A | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 115W | 49A | 80μA | 600V | 49A | 0ns | Silicon Carbide Schottky | 600V | 9A | 1 | 9A | 280pF @ 1V 1MHz | 80μA @ 600V | 2.1V @ 9A | 9A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| 1N5552C.TR | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | Not Applicable | Axial | 12 Weeks | 1N5552 | Standard Recovery >500ns, > 200mA (Io) | 2μs | Standard | 92pF @ 5V 1MHz | 600V | 1μA @ 600V | 1V @ 3A | 5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDLL0.5A20 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll6676-datasheets-6366.pdf | DO-213AA | 2 | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | O-LELF-R2 | 200mA | ISOLATED | 100 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 20V | Schottky | 20V | 500mA | 0.5A | 50pF @ 0V 1MHz | 10μA @ 20V | 650mV @ 500mA | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-30EPF10-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs30apf10m3-datasheets-0552.pdf | TO-247-2 | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 450 ns | Standard | 1kV | 30A | 350A | 1 | 1000V | 100μA @ 1000V | 1.41V @ 30A | -40°C~150°C |
