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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Dual Supply Voltage | Configuration | Case Connection | Drain to Source Voltage (Vdss) | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| VS-EBU8006HF4 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw, Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsebu8006hf4-datasheets-6856.pdf | PowerTab® | 1 | 14 Weeks | 2 | EAR99 | No | 8541.10.00.80 | AEC-Q101 | UNSPECIFIED | Single | 1 | R-PSFM-X1 | 750A | CATHODE | ULTRA FAST SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 8μA | 600V | 750A | 600V | 46 ns | Standard | 600V | 80A | 1 | 8μA @ 600V | 1.53V @ 80A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3611E3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n3611-datasheets-7844.pdf | A, Axial | 7 Weeks | A, Axial | Standard Recovery >500ns, > 200mA (Io) | Standard | 200V | 1μA @ 200V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-16FL60S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 16A | 225A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 600V | 500 ns | 500 ns | Standard | 600V | 16A | 600V | 50μA @ 600V | 1.4V @ 16A | 16A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S16GR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s16gr-datasheets-9762.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 16A | 370A | SINGLE | ANODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 400V | Standard, Reverse Polarity | 400V | 16A | 1 | 10μA @ 50V | 1.1V @ 16A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-80PF40W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs80pfr80-datasheets-2447.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | WIRE | Single | 1 | O-MUPM-W1 | 80A | 1.57kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 400V | 1.57kA | 400V | Standard | 400V | 80A | 1 | 1.4V @ 220A | -55°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| S16Q | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s16q-datasheets-9764.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 16A | 370A | SINGLE | CATHODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.2kV | 1.2kV | Standard | 1.2kV | 16A | 1 | 1200V | 10μA @ 50V | 1.1V @ 16A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| S16BR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s16br-datasheets-9765.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 16A | 370A | SINGLE | ANODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100V | Standard, Reverse Polarity | 100V | 16A | 1 | 10μA @ 50V | 1.1V @ 16A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30EPH06HN3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs30eph06hn3-datasheets-6863.pdf | TO-247-2 | 2 | 14 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | AEC-Q101 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSFM-T2 | 300A | CATHODE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 600V | 31 ns | 35 ns | Standard | 600V | 30A | 1 | 50μA @ 600V | 2.6V @ 30A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| S16QR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s16qr-datasheets-9767.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 16A | 370A | SINGLE | ANODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.2kV | 1.2kV | Standard, Reverse Polarity | 1.2kV | 16A | 1 | 1200V | 10μA @ 50V | 1.1V @ 16A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC12H065D | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stpsc12h065d-datasheets-6866.pdf | TO-220-2 | 2 | 14 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | SINGLE | NOT SPECIFIED | STPSC12 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PSFM-T2 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | 120μA | TO-220AC | Silicon Carbide Schottky | 650V | 12A | 90A | 1 | 600pF @ 0V 1MHz | 650V | 120μA @ 650V | 1.75V @ 12A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| S16B | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | /files/genesicsemiconductor-s16b-datasheets-9770.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-MUPM-D1 | 16A | 370A | SINGLE | CATHODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100V | Standard | 100V | 16A | 1 | 10μA @ 50V | 1.1V @ 16A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| S16DR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s16dr-datasheets-9772.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 16A | 370A | SINGLE | ANODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 200V | Standard, Reverse Polarity | 200V | 16A | 1 | 10μA @ 50V | 1.1V @ 16A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| DNA30E2200PZ-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | ANODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 210W | 2200V | 40μA | Standard | 340A | 1 | 30A | 7pF @ 700V 1MHz | 2200V | 40μA @ 2200V | 1.26V @ 30A | 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N1199A | GeneSiC Semiconductor | $5.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1N1199 | 200°C | 1 | O-MUPM-D1 | 12A | 240A | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 50V | 50V | Standard | 50V | 12A | 1 | 10μA @ 50V | 1.1V @ 12A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-100BGQ015HF4 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Screw, Through Hole | Through Hole | Tube | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs100bgq015hf4-datasheets-6852.pdf | PowerTab® | 1 | 12 Weeks | 2 | EAR99 | No | UNSPECIFIED | Single | 1 | Rectifier Diodes | R-PSFM-X1 | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 15V | 5kA | 18000μA | Schottky | 15V | 100A | 5000A | 1 | 3800pF @ 5V 1MHz | 18mA @ 15V | 520mV @ 100A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FD700 | MICROSS/On Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tray | 3 (168 Hours) | RoHS Compliant | Die | 4 Weeks | Die | Standard Recovery >500ns, > 200mA (Io) | 700ns | Standard | 1pF @ 0V 1MHz | 20V | 50nA @ 20V | 1.1V @ 50mA | 50mA | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N486BUR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | 17 Weeks | 2 | No | Single | 200mA | 25nA | 225V | 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3673A | GeneSiC Semiconductor | $24.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AA, DO-4, Stud | 1 | 6 Weeks | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 1N3673 | NOT SPECIFIED | 1 | O-MUPM-D1 | 12A | 240A | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 1kV | Standard | 1kV | 12A | 1 | 1000V | 10μA @ 50V | 1.1V @ 12A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-60EPU02-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs60apu02n3-datasheets-4490.pdf | TO-247-2 | 15.9mm | 20.7mm | 5.3mm | 2 | 14 Weeks | 2 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 60A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800A | 50μA | 200V | 28 ns | Standard | 200V | 60A | 1 | 50μA @ 200V | 1.08V @ 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3670A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1206ra-datasheets-0539.pdf | 11mm | DO-203AA, DO-4, Stud | 31.8mm | 31.8mm | 13 Weeks | 2 | 1N3670 | Single | DO-203AA | 12A | 240A | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | 240A | 900μA | 700V | 700V | Standard | 700V | 12A | 700V | 900μA @ 700V | 1.35V @ 12A | 12A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40EPF02-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs40epf06m3-datasheets-6133.pdf | TO-247-2 | 15.9mm | 20.3mm | 5.3mm | 2 | 12 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT APPLICABLE | Single | NOT APPLICABLE | 1 | 40A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 475A | 100μA | 200V | 180 ns | Standard | 200V | 40A | 1 | 100μA @ 200V | 1.25V @ 40A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| APT60D120SG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemi-apt60d120sg-datasheets-9749.pdf | 1.2kV | 60A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 3 | IN PRODUCTION (Last Updated: 2 weeks ago) | yes | No | 8541.10.00.80 | e3 | PURE MATTE TIN | GULL WING | 245 | 3 | Single | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 60A | 60A | 2.5V | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 1.2kV | 540A | 400 ns | Standard | 1.2kV | 60A | 1 | 1200V | 250μA @ 1200V | 2.5V @ 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||
| UF27520070A1.T1 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | Avalanche | 200V | 60μA @ 200V | 1V @ 90A | 90A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8AF1RPP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8af1rpp-datasheets-6845.pdf | B-47 | 15 Weeks | Unknown | 2 | Single | B-47 | 50A | 1.45V | Standard Recovery >500ns, > 200mA (Io) | 100V | Standard, Reverse Polarity | 100V | 50A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N649UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n647ur1-datasheets-6695.pdf | DO-213AA (Glass) | 2 | 6 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | 400mA | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 0.5W | 600V | Standard | 600V | 400mA | 0.4A | 50nA @ 600V | 1V @ 400mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-80APS12PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2008 | /files/vishay-vs80aps08m3-datasheets-8236.pdf | TO-247-3 | 3 | 3 | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | Common Anode | 1 | 80A | 1.17V | 1.45kA | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.45kA | 100μA | 1.2kV | 1.5kA | 1.2kV | TO-247AC | Standard | 1.2kV | 80A | 1 | 1200V | 100μA @ 1200V | 1.17V @ 80A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| DSB5818 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | DO-204AL, DO-41, Axial | 2 | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | WIRE | 2 | Single | 1 | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100nA | 30V | Schottky | 30V | 1A | 1A | 100nA @ 30V | 600mV @ 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMBD3595 | MICROSS/On Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | RoHS Compliant | 4 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N1200AR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1N1200AR | 200°C | 1 | O-MUPM-D1 | 12A | 240A | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100V | Standard, Reverse Polarity | 100V | 12A | 1 | 10μA @ 50V | 1.1V @ 12A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDC21D120T6MX1SA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-idc21d120t6mx1sa2-datasheets-6849.pdf | Die | Lead Free | 1 | 13 Weeks | EAR99 | 8541.10.00.40 | Halogen Free | YES | UPPER | NO LEAD | NOT SPECIFIED | 1 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-XUUC-N1 | 1.2kV | SINGLE | 1.2kV | FAST SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1200V | Standard | 1 | 35A | 1200V | 7.7μA @ 1200V | 2.05V @ 35A | 35A | -40°C~175°C |
