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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-HFA08PB120-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-vshfa08pb120pbf-datasheets-5925.pdf | TO-247-2 | 15.9mm | 20.7mm | 5.3mm | 2 | 13 Weeks | 2 | EAR99 | LOW NOISE, PD-CASE | unknown | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 8A | 4.3V | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 73.5W | 130A | 10μA | 1.2kV | 32A | 95 ns | Standard | 1.2kV | 8A | 1 | 8A | 1200V | 10μA @ 1200V | 3.3V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| VS-EBU15006-F4 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vsebu15006f4-datasheets-6747.pdf | PowerTab® | 1 | 14 Weeks | EAR99 | unknown | 8541.10.00.80 | SINGLE | UNSPECIFIED | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-X1 | SINGLE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 8μA | 100 ns | Standard | 600V | 150A | 1200A | 1 | 600V | 8μA @ 600V | 1.63V @ 150A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-12FL10S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | 2 | No | Single | DO-203AA | 12A | 1.4V | 180A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 100V | 180A | 100V | 200 ns | 200 ns | Standard | 100V | 12A | 100V | 50μA @ 100V | 1.4V @ 12A | 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3624 | Vishay Semiconductor Diodes Division | $4.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | unknown | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 200°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | MEDIUM POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Standard | 700V | 12A | 240A | 1 | 700V | 900μA @ 700V | 1.35V @ 12A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| S6G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s6g-datasheets-9647.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 167A | SINGLE | CATHODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 400V | Standard | 400V | 6A | 1 | 6A | 10μA @ 100V | 1.1V @ 6A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| 66SPB200A | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | SPD-2A | 6 Weeks | SPD-2A | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 900pF @ 5V 1MHz | 200V | 1.1mA @ 200V | 950mV @ 60A | 60A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 63SPB080A | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | SPD-2A | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1500pF @ 5V 1MHz | 80V | 1mA @ 80V | 870mV @ 60A | 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-60EPS08-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs60eps12m3-datasheets-1459.pdf | TO-247-2 | 15.87mm | 20.7mm | 5.31mm | 2 | 12 Weeks | 2 | EAR99 | unknown | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT APPLICABLE | Single | NOT APPLICABLE | 1 | 60A | 1.09V | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.1kA | 1mA | 800V | 1kA | Standard | 800V | 60A | 1 | 100μA @ 800V | 1.09V @ 60A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| S6DR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s6dr-datasheets-9648.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 167A | SINGLE | ANODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 200V | Standard, Reverse Polarity | 200V | 6A | 1 | 6A | 10μA @ 100V | 1.1V @ 6A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-16FLR20S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 225A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 200V | 200 ns | 200 ns | Standard, Reverse Polarity | 200V | 16A | 200V | 50μA @ 200V | 1.4V @ 16A | 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DNA30EM2200PZ-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | ANODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 210W | 2200V | 40μA | Standard | 340A | 1 | 30A | 7pF @ 700V 1MHz | 2200V | 40μA @ 2200V | 1.26V @ 30A | 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30EPH03-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs30eph03pbf-datasheets-5006.pdf | TO-247-2 | 2 | 14 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60μA | 38 ns | Standard | 300V | 30A | 300A | 1 | 300V | 60μA @ 300V | 1.25V @ 30A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| S6M | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | /files/genesicsemiconductor-s6m-datasheets-9651.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 167A | SINGLE | CATHODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 1kV | Standard | 1kV | 6A | 1 | 6A | 1000V | 10μA @ 100V | 1.1V @ 6A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-100BGQ030HF4 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Screw, Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs100bgq030hf4-datasheets-6739.pdf | PowerTab® | 1 | 12 Weeks | 2 | EAR99 | No | UNSPECIFIED | Single | 1 | R-PSFM-X1 | 630mV | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30V | 4.5kA | Schottky | 30V | 100A | 4500A | 1 | 2.4mA @ 30V | 630mV @ 100A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1204RA | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1206ra-datasheets-0539.pdf | DO-203AA, DO-4, Stud | 12.69mm | 31.8008mm | 11mm | 13 Weeks | 2 | 1N1204 | Single | DO-203AA | 12A | 240A | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | 240A | 1.5mA | 400V | 240A | 400V | Standard, Reverse Polarity | 400V | 12A | 400V | 1.5mA @ 400V | 1.35V @ 12A | 12A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||
| S6BR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s6br-datasheets-9656.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 167A | SINGLE | ANODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100V | Standard, Reverse Polarity | 100V | 6A | 1 | 6A | 10μA @ 100V | 1.1V @ 6A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| DSB0.2A30 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 125°C | -65°C | SCHOTTKY | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-dsb05a20-datasheets-6381.pdf | 2 | 8 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | AXIAL | WIRE | Single | 1 | 200mA | ISOLATED | SILICON | 5μA | 30V | DO-35 | RECTIFIER DIODE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40HFR10 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 40A | 1.3V | 595A | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 595A | 9mA | 100V | 595A | 100V | Standard, Reverse Polarity | 100V | 40A | 1 | 9mA @ 100V | 1.3V @ 125A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||
| S6B | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s6b-datasheets-9641.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 167A | SINGLE | CATHODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100V | Standard | 100V | 6A | 1 | 6A | 10μA @ 100V | 1.1V @ 6A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| IDH08SG60CXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/infineontechnologies-idh08sg60cxksa2-datasheets-6726.pdf | TO-220-2 | Lead Free | 2 | 18 Weeks | No SVHC | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | NO | Single | 1 | 8A | 2.1V | 42A | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 42A | 70μA | 600V | 42A | 0ns | Silicon Carbide Schottky | 600V | 8A | 1 | 8A | 240pF @ 1V 1MHz | 70μA @ 600V | 2.1V @ 8A | 8A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| S6Q | GeneSiC Semiconductor | $5.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s6q-datasheets-9645.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 167A | SINGLE | CATHODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.2kV | 1.2kV | Standard | 1.2kV | 6A | 1 | 6A | 1200V | 10μA @ 100V | 1.1V @ 6A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| 1N483A | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | 1997 | 2 | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | NO | AXIAL | WIRE | NOT SPECIFIED | 2 | 200°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | SILICON | 0.5W | 70V | DO-7 | 1V | RECTIFIER DIODE | 2A | 0.2A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| S6KR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s6kr-datasheets-9646.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 167A | SINGLE | ANODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 800V | 800V | Standard, Reverse Polarity | 800V | 6A | 1 | 6A | 10μA @ 100V | 1.1V @ 6A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| DHF30IM600QB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-dhf30im600qb-datasheets-6709.pdf | TO-3P-3, SC-65-3 | 3 | 5.500006g | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 200A | 50μA | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 35 ns | 35 ns | Standard | 600V | 30A | 1 | 50μA @ 600V | 2.36V @ 30A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| VS-6FR20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs6f60-datasheets-2910.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 167A | ANODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12mA | 200V | Standard, Reverse Polarity | 200V | 6A | 1 | 6A | 12mA @ 200V | 1.1V @ 19A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-6FR80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs6f60-datasheets-2910.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 167A | ANODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12mA | 800V | Standard, Reverse Polarity | 800V | 6A | 1 | 6A | 12mA @ 800V | 1.1V @ 19A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| JAN1N914UR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/116 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n914ur-datasheets-0276.pdf | DO-213AA | 2 | 14 Weeks | 2 | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/116L | END | WRAP AROUND | Single | 1 | Qualified | 1.2V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 500nA | 75V | 2A | 5 ns | Standard | 0.075A | 4pF @ 0V 1MHz | 500nA @ 75V | 1.2V @ 50mA | 200mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| DMA30P1600HB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | TO-247-3 | 20 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | Standard Recovery >500ns, > 200mA (Io) | Standard | 11pF @ 400V 1MHz | 1600V | 40μA @ 1600V | 1.26V @ 30A | 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-16FR80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs16fr60-datasheets-2233.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 16A | 1.23V | 370A | ANODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 370A | 12mA | 800V | 370A | 800V | Standard, Reverse Polarity | 800V | 16A | 1 | 12mA @ 800V | 1.23V @ 50A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| IDH10SG60CXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-idh10sg60cxksa2-datasheets-6717.pdf | TO-220-2 | 2 | 18 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 600V | 0ns | Silicon Carbide Schottky | 51A | 1 | 10A | 290pF @ 1V 1MHz | 600V | 90μA @ 600V | 2.1V @ 10A | 10A DC | -55°C~175°C |
