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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Current Rating | Diameter | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| CDLL485B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll486b-datasheets-5936.pdf | DO-213AA | 2 | 17 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | O-LELF-R2 | 200mA | ISOLATED | 100 °C/W | Small Signal =< 200mA (Io), Any Speed | SILICON | 100μA | 180V | Standard | 180V | 200mA | 0.2A | 100μA @ 180V | 1V @ 100mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1201RA | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1206ra-datasheets-0539.pdf | 12A | DO-203AA, DO-4, Stud | 13 Weeks | 1N1201 | Single | DO-203AA | 240A | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | 2.25mA | 150V | Standard, Reverse Polarity | 150V | 12A | 150V | 2.25mA @ 150V | 1.35V @ 12A | 12A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP29-06B | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2000 | /files/ixys-dsep2906b-datasheets-6596.pdf | TO-220-2 | 10.66mm | 16.51mm | 4.82mm | 2 | 28 Weeks | 2 | yes | EAR99 | SNUBBER DIODE, FREE WHEELING DIODE | No | 8541.10.00.80 | DSEP29-06 | 3 | Single | 1 | Rectifier Diodes | 30A | 2.52V | CATHODE | SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 165W | 250A | 2mA | 600V | 250A | 30 ns | Standard | 600V | 30A | 1 | 250μA @ 600V | 2.52V @ 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||
| VS-HFA15PB60-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vshfa15pb60pbf-datasheets-6159.pdf | TO-247-2 | 15.9mm | 20.7mm | 5.3mm | 2 | 13 Weeks | 2 | EAR99 | LOW NOISE, PD-CASE | unknown | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 15A | 2V | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 74W | 150A | 10μA | 600V | 150A | 60 ns | Standard | 600V | 15A | 1 | 10μA @ 600V | 1.7V @ 15A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| VS-HFA16PB120HN3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vshfa16pb120hn3-datasheets-6600.pdf | TO-247-2 | 2 | 13 Weeks | EAR99 | LOW NOISE, PD-CASE | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 151W | 20μA | 90 ns | Standard | 1.2kV | 16A | 190A | 1 | 1200V | 20μA @ 1200V | 3V @ 16A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-65EPF12L-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs65apf12lm3-datasheets-6525.pdf | TO-247-2 | 12 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | Standard | 1200V | 100μA @ 1200V | 1.42V @ 65A | 65A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30EPF06-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | /files/vishay-vs30epf02pbf-datasheets-8414.pdf | TO-247-2 | 15.9mm | 20.7mm | 5.3mm | 2 | 12 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT APPLICABLE | Single | NOT APPLICABLE | 1 | 30A | CATHODE | FAST SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 350A | 100μA | 600V | 160 ns | Standard | 600V | 30A | 1 | 100μA @ 600V | 1.41V @ 30A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| DNA30ER2200IY | IXYS | $4.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | TO-262-2, I2Pak | 2 | 28 Weeks | EAR99 | LOW LEAKAGE CURRENT | 8541.10.00.80 | NO | SINGLE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PSIP-T2 | SINGLE | ANODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 210W | 2200V | 40μA | Standard | 340A | 1 | 30A | 7pF @ 700V 1MHz | 2200V | 40μA @ 2200V | 1.26V @ 30A | 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N4247 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/286 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n4248-datasheets-8351.pdf | A, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 25A | 5 μs | Standard | 600V | 1A | 1A | 1μA @ 600V | 1.3V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| 1N4245 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n4248-datasheets-8351.pdf | A, Axial | Contains Lead | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Yes | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 200V | 25A | 5 μs | Standard | 200V | 1A | 1A | 1μA @ 200V | 1.3V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| VS-65PQ015-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs65pq015pbf-datasheets-5012.pdf | TO-247-3 | 3 | 12 Weeks | EAR99 | unknown | SINGLE | NOT SPECIFIED | 125°C | NOT SPECIFIED | 1 | R-PSFM-T3 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 18000μA | TO-247AC | Schottky | 15V | 65A | 400A | 1 | 15V | 18mA @ 15V | 500mV @ 65A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1199RA | Vishay Semiconductor Diodes Division | $3.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1206ra-datasheets-0539.pdf | DO-203AA, DO-4, Stud | 12.69mm | 31.8mm | 11mm | 13 Weeks | 2 | 1N1199 | Single | DO-203AA | 12A | 1.35V | 240A | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | 240A | 3mA | 50V | 240A | 50V | Standard, Reverse Polarity | 50V | 12A | 50V | 3mA @ 50V | 1.35V @ 12A | 12A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-30APF04-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishay-vs30epf02pbf-datasheets-8414.pdf | TO-247-3 | 3 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-247AC | 60 ns | Standard | 400V | 30A | 320A | 1 | 400V | 100μA @ 400V | 1.41V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-25F10 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 1998 | /files/vishaysemiconductordiodesdivision-vs25f40-datasheets-7911.pdf | 11mm | DO-203AA, DO-4, Stud | 31.8mm | 31.8008mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 25A | 900mV | 373A | CATHODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12mA | 100V | 373A | 100V | Standard | 100V | 25A | 1 | 12mA @ 100V | 1.3V @ 78A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| DMA50I1600HA | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | TO-247-2 | 20 Weeks | EAR99 | Standard Recovery >500ns, > 200mA (Io) | Standard | 19pF @ 400V 1MHz | 1600V | 40μA @ 1600V | 1.3V @ 50A | 50A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDLL0.2A20 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll6676-datasheets-6366.pdf | DO-213AA | 2 | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | O-LELF-R2 | 200mA | ISOLATED | 100 °C/W | Small Signal =< 200mA (Io), Any Speed | SILICON | 5μA | 20V | Schottky | 20V | 200mA | 0.2A | 50pF @ 0V 1MHz | 5μA @ 20V | 500mV @ 200mA | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||
| CDLL0.2A40 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll6676-datasheets-6366.pdf | DO-213AA | 2 | 17 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | O-LELF-R2 | 200mA | ISOLATED | 100 °C/W | Small Signal =< 200mA (Io), Any Speed | SILICON | 5μA | 40V | Schottky | 40V | 200mA | 0.2A | 50pF @ 0V 1MHz | 5μA @ 40V | 500mV @ 200mA | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||
| UFS550G/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs530je3tr13-datasheets-5071.pdf | DO-215AB, SMC Gull Wing | 20 Weeks | 2 | no | No | UFS550 | Single | 5A | 1.2V | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 500V | 175A | 50 ns | Standard | 500V | 5A | 10μA @ 500V | 1.2V @ 5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N4148UR-1 | Microsemi Corporation | $2.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/116 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/avxcorporation-cwr09fb105mb-datasheets-1730.pdf | DO-213AA | Contains Lead | 2 | 20 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/116L | END | WRAP AROUND | Single | 1 | Qualified | 1.2V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 500nA | 75V | 2A | 5 ns | Standard | 4pF @ 0V 1MHz | 25nA @ 20V | 1.2V @ 100mA | 200mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| CDLL0.5A30 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll6676-datasheets-6366.pdf | DO-213AA | 2 | 17 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | O-LELF-R2 | 200mA | ISOLATED | 100 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 30V | Schottky | 30V | 500mA | 0.5A | 50pF @ 0V 1MHz | 10μA @ 30V | 650mV @ 500mA | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||
| RHRG5060-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | /files/onsemiconductor-rhrg5060f085-datasheets-6541.pdf | TO-247-2 | 2 | 10 Weeks | 6.33g | yes | FREE WHEELING DIODE | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Rectifier Diodes | R-PSFM-T2 | 50A | 1.67V | 150A | HYPERFAST SOFT RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON NITRIDE | 150A | 600V | TO-247AB | 60 ns | 45 ns | Standard | 600V | 50A | 1 | 250μA @ 600V | 2.1V @ 50A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| DMA10P1200HR | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | TO-247-3 | 3 | 28 Weeks | EAR99 | LOW LEAKAGE CURRENT, PD-CASE, UL RECOGNIZED | 8541.10.00.80 | IEC-60747 | NO | SINGLE | 175°C | 2 | R-PSFM-T3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75W | 1200V | 10μA | Standard | 110A | 1 | 10A | 4pF @ 400V 1MHz | 1200V | 10μA @ 1200V | 1.23V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-65EPF06L-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs65apf06lm3-datasheets-6538.pdf | TO-247-2 | 12 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | Standard | 600V | 100μA @ 600V | 1.32V @ 65A | 65A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1199A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1206ra-datasheets-0539.pdf | 11mm | DO-203AA, DO-4, Stud | 31.8mm | 13 Weeks | Unknown | 2 | No | 1N1199 | Single | DO-203AA | 12A | 1.35V | 240A | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | 240A | 3mA | 50V | 240A | 50V | Standard | 50V | 12A | 50V | 3mA @ 50V | 1.35V @ 12A | 12A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||
| DPG30I600AHA | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 20 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSB5817 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 125°C | -55°C | SCHOTTKY | Non-RoHS Compliant | 2 | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | AXIAL | WIRE | 2 | Single | 1 | 1A | ISOLATED | SILICON | 100nA | 20V | DO-41 | RECTIFIER DIODE | 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UFS580G/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs580je3tr13-datasheets-5062.pdf | DO-215AB, SMC Gull Wing | 20 Weeks | 2 | No | UFS580 | Single | DO-215AB | 5A | 1.35V | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 800V | 175A | 60ns | Standard | 800V | 5A | 800V | 10μA @ 800V | 1.35V @ 5A | 5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-75EPU12L-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Tube | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs75epu12ln3-datasheets-6554.pdf | TO-247-2 | 14 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 265ns | Standard | 1200V | 420μA @ 1200V | 2.55V @ 75A | 75A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DHG30I1200HA | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2006 | /files/ixys-dhg30i1200ha-datasheets-6556.pdf&product=ixys-dhg30i1200ha-6004988 | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 2 | 20 Weeks | 6.500007g | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | 180W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 30A | 2.26V | 200A | 5mA | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 180A | 50μA | 1.2kV | 200 ns | 200 ns | Standard | 1.2kV | 30A | 1 | 1200V | 50μA @ 1200V | 2.26V @ 30A | -55°C~150°C | |||||||||||||||||||||||||||||||||
| FFSB2065BDN-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ffsb2065bdnf085-datasheets-6557.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10 Weeks | yes | not_compliant | e3 | Tin (Sn) | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 421pF @ 1V 100kHz | 650V | 40μA @ 650V | 1.75V @ 10A | 23.6A | -55°C~175°C |
