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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| VS-40EPS08-M3 |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2T2KA | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | Axial | 18 Weeks | Axial | Standard Recovery >500ns, > 200mA (Io) | 2 μs | Standard | 2kV | 2A | 2000V | 1μA @ 2000V | 2V @ 2A | 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMA10P1600HR | IXYS | $7.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | TO-247-3 | 3 | 28 Weeks | EAR99 | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 2 | R-PSFM-T3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 75W | 1600V | 10μA | Standard | 110A | 1 | 4pF @ 400V 1MHz | 1600V | 10μA @ 1600V | 1.23V @ 10A | 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-25FR10 | Vishay Semiconductor Diodes Division | $4.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs25f40-datasheets-7911.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 373A | ANODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12mA | 100V | Standard, Reverse Polarity | 100V | 25A | 1 | 12mA @ 100V | 1.3V @ 78A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| UFS550J/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs530je3tr13-datasheets-5071.pdf | DO-214AB, SMC | 20 Weeks | 2 | no | No | UFS550 | Single | 5A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 500V | 175A | 50 ns | Standard | 500V | 5A | 10μA @ 500V | 1.2V @ 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UFS320G/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs320je3tr13-datasheets-4376.pdf | DO-215AB, SMC Gull Wing | 20 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | UFS320 | Single | DO-215AB | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 200V | 100A | 30 ns | Standard | 200V | 3A | 200V | 10μA @ 200V | 950mV @ 3A | 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30D60SG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | 600V | 30A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | Standard | Single | D3 [S] | 30A | 30A | 1.8V | Fast Recovery =< 500ns, > 200mA (Io) | 250μA | 600V | 320A | 85ns | Standard | 600V | 250μA @ 600V | 1.8V @ 30A | 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSB0.2A20 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-dsb05a20-datasheets-6381.pdf | DO-204AH, DO-35, Axial | 2 | 17 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | WIRE | Single | 1 | 200mA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 5μA | 20V | Schottky | 20V | 200mA | 50pF @ 0V 1MHz | 5μA @ 20V | 500mV @ 200mA | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 66PQ040 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Non-RoHS Compliant | TO-247-3 | 15 Weeks | TO-247AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 40V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40EPF04PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2007 | /files/vishay-vs40epf04pbf-datasheets-9523.pdf | TO-247-2 | 2 | 8 Weeks | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 1 | 40A | 1.25V | 475A | CATHODE | FAST SOFT RECOVERY | 0.2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 400V | 475A | 400V | 180 ns | 180 ns | Standard | 400V | 40A | 1 | 100μA @ 400V | 1.25V @ 40A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-25FR20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs25f40-datasheets-7911.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 373A | ANODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12mA | 200V | Standard, Reverse Polarity | 200V | 25A | 1 | 12mA @ 200V | 1.3V @ 78A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| IDL12G65C5XUMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-idl12g65c5xuma2-datasheets-6496.pdf | 4-PowerTSFN | 18 Weeks | 4 | EAR99 | Halogen Free | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 360pF @ 1V 1MHz | 650V | 190μA @ 650V | 1.7V @ 12A | 12A DC | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSP2065B-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Not Applicable | ROHS3 Compliant | /files/onsemiconductor-ffsp2065bf085-datasheets-6499.pdf | TO-220-2 | 10 Weeks | yes | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 866pF @ 1V 100kHz | 650V | 40μA @ 650V | 1.7V @ 20A | 20A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DHF30IM600PN | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-dhf30im600pn-datasheets-6502.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 2.299997g | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 200A | 50μA | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 35 ns | 35 ns | Standard | 600V | 15A | 1 | 50μA @ 600V | 2.37V @ 30A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SD200SA30B.T | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 3300pF @ 5V 1MHz | 30V | 6mA @ 30V | 530mV @ 60A | 60A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6857-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 150°C | -65°C | SCHOTTKY | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5712-datasheets-5772.pdf | 2 | 10 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | AXIAL | WIRE | Single | 1 | 75mA | ISOLATED | SILICON | 20V | DO-35 | RECTIFIER DIODE | 0.075A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40EPF02PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2007 | /files/vishay-vs40epf02pbf-datasheets-9516.pdf | TO-247-2 | 15.9mm | 20.3mm | 5.3mm | 2 | 8 Weeks | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 1 | 40A | 1.25V | 475A | CATHODE | FAST SOFT RECOVERY | 0.2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 475A | 100μA | 200V | 475A | 200V | 180 ns | 180 ns | Standard | 200V | 40A | 1 | 100μA @ 200V | 1.25V @ 40A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| SD175SA30B.T1 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 2200pF @ 5V 1MHz | 30V | 4mA @ 30V | 490mV @ 30A | 30A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDD09SG60CXTMA2 | Infineon Technologies | $6.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-idd09sg60cxtma2-datasheets-6481.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | EAR99 | 8541.10.00.80 | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 600V | 0ns | Silicon Carbide Schottky | 42A | 1 | 9A | 280pF @ 1V 1MHz | 600V | 80μA @ 600V | 2.1V @ 9A | 9A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5417 |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDH06SG60CXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/infineontechnologies-idh06sg60cxksa2-datasheets-6452.pdf | TO-220-2 | 10.2mm | 15.95mm | 4.5mm | Lead Free | 2 | 18 Weeks | No SVHC | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | NO | Single | 71W | 1 | 6A | 2.3V | 32A | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 32A | 50μA | 600V | 32A | 0ns | Silicon Carbide Schottky | 600V | 6A | 1 | 6A | 130pF @ 1V 1MHz | 50μA @ 600V | 2.3V @ 6A | 6A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| DMA10P1800PZ-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 2 | R-PSSO-G2 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ANODE AND CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100W | 1800V | 10μA | Standard | 110A | 1 | 10A | 4pF @ 400V 1MHz | 1800V | 10μA @ 1800V | 1.26V @ 10A | 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP29-12B | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | AVALANCHE | TO-220-2 | 2 | 28 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, PD-CASE | IEC-60747 | NO | SINGLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 165W | 1200V | 100μA | TO-220AC | 140ns | Standard | 200A | 1 | 12pF @ 600V 1MHz | 1200V | 100μA @ 1200V | 3.76V @ 30A | 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| UFS560J/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs580je3tr13-datasheets-5062.pdf | DO-214AB, SMC | 20 Weeks | 2 | No | UFS560 | Single | DO-214AB | 5A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 600V | 175A | 60 ns | Standard | 600V | 5A | 600V | 10μA @ 600V | 1.35V @ 5A | 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP3D010A065C | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSB0.5A30 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-dsb05a20-datasheets-6381.pdf | DO-204AH, DO-35, Axial | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | WIRE | Single | 1 | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 30V | Schottky | 30V | 500mA | 0.5A | 60pF @ 0V 1MHz | 10μA @ 30V | 650mV @ 500mA | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| UFS510J/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs515je3tr13-datasheets-5058.pdf | DO-214AB, SMC | 20 Weeks | 2 | no | No | UFS510 | Single | 5A | 950mV | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 100V | 175A | 30 ns | Standard | 100V | 5A | 10μA @ 100V | 950mV @ 5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DPF60IM400HB | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2010 | /files/ixys-dpf60im400hb-datasheets-6466.pdf | TO-247-3 | 3 | 20 Weeks | 6.500007g | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | 275W | SINGLE | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T3 | 1.55V | 600A | 500μA | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600A | TO-247AD | 60 ns | 60 ns | Standard | 400V | 60A | 1 | 1μA @ 400V | 1.27V @ 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| SD200SA60B.T | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 2400pF @ 5V 1MHz | 60V | 6mA @ 60V | 680mV @ 60A | 60A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDBJSC8650-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdbjsc8650g-datasheets-6468.pdf | TO-220-2 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 560pF @ 0V 1MHz | 650V | 100μA @ 650V | 1.7V @ 8A | 8A DC | -55°C~175°C |
