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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Max Dual Supply Voltage | Configuration | Case Connection | Drain to Source Voltage (Vdss) | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DPG60IM300PC-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | AVALANCHE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, PD-CASE, SNUBBER DIODE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 335W | 300V | 1μA | 35ns | Standard | 550A | 1 | 60A | 80pF @ 150V 1MHz | 300V | 1μA @ 300V | 1.43V @ 60A | 60A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LSM140 MELF | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-lsm145melf-datasheets-5509.pdf | DO-213AB, MELF | DO-213AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 1mA @ 40V | 580mV @ 1A | 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-ETU3006STRLHM3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsetu3006shm3-datasheets-6313.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 200A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 600V | 45 ns | 45 ns | Standard | 600V | 30A | 1 | 30μA @ 600V | 2V @ 30A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-65EPS16L-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs65aps16lm3-datasheets-6304.pdf | TO-247-2 | 12 Weeks | TO-247AD | Standard Recovery >500ns, > 200mA (Io) | Standard | 1600V | 100μA @ 1600V | 1.17V @ 65A | 65A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDC14D60F6X1SA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-sidc14d60f6x1sa2-datasheets-6410.pdf | Die | Contains Lead | 1 | no | EAR99 | 8541.10.00.40 | Halogen Free | UPPER | NO LEAD | NOT SPECIFIED | SIDC14D60 | 1 | 150°C | NOT SPECIFIED | 1 | Not Qualified | S-XUUC-N1 | 45A | 600V | SINGLE | 600V | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Standard | 600V | 45A | 1 | 0.14μs | 27μA @ 600V | 1.6V @ 45A | 45A DC | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N3595A-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/241 | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | DO-204AH, DO-35, Axial | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | 8541.10.00.70 | e0 | TIN LEAD | MIL-19500/241 | NO | WIRE | 2 | 175°C | 1 | Rectifier Diodes | Qualified | O-LALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 125V | 3μs | Standard | 4A | 0.15A | 125V | 2nA @ 125V | 920mV @ 100mA | 150mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-HFA08PB60-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vshfa08pb60pbf-datasheets-6317.pdf | TO-247-2 | 15.9mm | 20.7mm | 5.3mm | 2 | 13 Weeks | 2 | EAR99 | LOW NOISE, PD-CASE | unknown | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 8A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 36W | 60A | 5μA | 600V | 55 ns | Standard | 600V | 8A | 1 | 8A | 5μA @ 600V | 1.7V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40APS16PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishay-vs40eps16m3-datasheets-8376.pdf | TO-247-3 | 2 | 8 Weeks | EAR99 | unknown | 8541.10.00.80 | SINGLE | 150°C | 1 | R-PSFM-T2 | SINGLE | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100μA | TO-247AC | Standard | 1.6kV | 40A | 475A | 1 | 1600V | 100μA @ 1600V | 1.14V @ 40A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDD08SG60CXTMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/infineontechnologies-idd08sg60cxtma2-datasheets-6391.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 18 Weeks | No SVHC | 3 | EAR99 | No | 8A | 8541.10.00.80 | 600V | YES | GULL WING | Single | 1 | R-PSSO-G2 | 8A | 2.1V | 42A | 70μA | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 100W | 42A | 70μA | 600V | 42A | 0ns | Silicon Carbide Schottky | 600V | 8A | 1 | 240pF @ 1V 1MHz | 70μA @ 600V | 2.1V @ 8A | 8A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| CDLL4150 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll3600-datasheets-6372.pdf | DO-213AA | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD OVER COPPER | END | WRAP AROUND | 235 | 2 | Single | 20 | 1 | 300mA | 1V | ISOLATED | 100 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.5W | 75V | 4A | 4 ns | Standard | 75V | 300mA | 2.5pF @ 0V 1MHz | 100nA @ 50V | 1V @ 200mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-45EPF12L-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs45apf12lm3-datasheets-6330.pdf | TO-247-2 | 12 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | Standard | 1200V | 100μA @ 1200V | 1.44V @ 45A | 45A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N4150UR-1 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/231 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | /files/microsemicorporation-1n4150ur1-datasheets-2339.pdf | DO-213AA | Contains Lead | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 200mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 100nA | 50V | 4A | 4 ns | Standard | 50V | 200mA | 100nA @ 50V | 1V @ 200mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DHG30IM600PC-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | AVALANCHE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, PD-CASE, SNUBBER DIODE | IEC-60747 | YES | SINGLE | GULL WING | 125°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 210W | 600V | 50μA | 35ns | Standard | 200A | 1 | 30A | 16pF @ 400V 1MHz | 600V | 50μA @ 600V | 2.26V @ 30A | 30A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDLL3600 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll3600-datasheets-6372.pdf | DO-213AA | 2 | 6 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | 300mA | 1V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 4A | 4 ns | Standard | 50V | 300mA | 0.3A | 2.5pF @ 0V 1MHz | 100nA @ 50V | 680mV @ 10mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSB1065A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | /files/onsemiconductor-ffsb1065a-datasheets-6374.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10 Weeks | yes | not_compliant | e3 | Tin (Sn) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 575pF @ 1V 100kHz | 650V | 200μA @ 650V | 1.75V @ 10A | 14A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-16FR10 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 1998 | /files/vishaysemiconductordiodesdivision-vs16fr60-datasheets-2233.pdf | DO-203AA, DO-4, Stud | 12.69mm | 31.8mm | 11mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 16A | 1.23V | 370A | ANODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 370A | 12mA | 100V | 370A | 100V | Standard, Reverse Polarity | 100V | 16A | 1 | 12mA @ 100V | 1.23V @ 50A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-30EPF02PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vs30epf06pbf-datasheets-5708.pdf | TO-247-2 | 15.9mm | 20.3mm | 5.3mm | 2 | 8 Weeks | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 1 | 30A | 350A | CATHODE | FAST SOFT RECOVERY | 0.2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 350A | 100μA | 200V | 350A | 200V | 160 ns | 160 ns | Standard | 200V | 30A | 1 | 100μA @ 200V | 1.41V @ 30A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| DSB2810 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5712-datasheets-5772.pdf | DO-204AH, DO-35, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | WIRE | Single | 1 | 75mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 20V | Schottky | 20V | 75mA | 0.075A | 2pF @ 0V 1MHz | 100nA @ 15V | 410mV @ 1mA | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSB1A20 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n58191-datasheets-8336.pdf | DO-204AL, DO-41, Axial | 2 | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | WIRE | Single | 1 | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100nA | 20V | Schottky | 20V | 1A | 1A | 100μA @ 20V | 600mV @ 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDLL1A40 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5819-datasheets-8782.pdf | DO-213AB, MELF | 2 | 17 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | O-LELF-R2 | 1A | ISOLATED | 220 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 40V | Schottky | 40V | 1A | 1A | 0.9pF @ 5V 1MHz | 100μA @ 40V | 600mV @ 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-ETH3006STRRHM3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vseth30061hm3-datasheets-6263.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 26 ns | Standard | 600V | 30A | 180A | 1 | 600V | 30μA @ 600V | 2.65V @ 30A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-ETU3006STRRHM3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsetu3006shm3-datasheets-6313.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 45 ns | Standard | 600V | 30A | 200A | 1 | 600V | 30μA @ 600V | 2V @ 30A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3595-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n35951-datasheets-6364.pdf | DO-204AH, DO-35, Axial | 2 | 6 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | Lead, Tin | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 150mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 1nA | 125V | 4A | 3 μs | Standard | 125V | 150mA | 0.15A | 1nA @ 125V | 1V @ 200mA | 150mA DC | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30D40BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 400V | 30A | TO-247-2 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 2 | 25 Weeks | 6.500007g | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | Single | 1 | R-PSFM-T2 | 30A | 30A | 1.5V | 320A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 400V | 320A | 32 ns | 22 ns | Standard | 400V | 30A | 1 | 400V | 250μA @ 400V | 1.5V @ 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| CDLL6676 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll6676-datasheets-6366.pdf | DO-213AA | 2 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | O-LELF-R2 | 200mA | ISOLATED | 100 °C/W | Small Signal =< 200mA (Io), Any Speed | SILICON | 5μA | 30V | Schottky | 30V | 200mA | 0.2A | 50pF @ 0V 1MHz | 5μA @ 30V | 500mV @ 200mA | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DPG60IM400QB | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFRED²™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2006 | /files/ixys-dpg60im400qb-datasheets-6368.pdf | TO-3P-3, SC-65-3 | 3 | 20 Weeks | 5.500006g | No SVHC | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | e3 | PURE TIN | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 60A | 1.22V | 450A | 1μA | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600A | 400V | 45 ns | 45 ns | Standard | 400V | 60A | 1 | 1μA @ 400V | 1.47V @ 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| CDLL1A30 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5819-datasheets-8782.pdf | DO-213AB, MELF | 2 | 17 Weeks | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | O-LELF-R2 | 1A | ISOLATED | 220 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 30V | Schottky | 30V | 1A | 1A | 0.9pF @ 5V 1MHz | 100μA @ 30V | 600mV @ 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DPG30I300HA | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/ixys-dpg30i300ha-datasheets-6346.pdf | TO-247-2 | 2 | 20 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 160W | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | 1.63V | 360A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 360A | 300V | 35 ns | 35 ns | Standard | 300V | 30A | 340A | 1 | 1μA @ 300V | 1.34V @ 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| IDW50E60FKSA1 | Infineon Technologies | $3.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | 2014 | /files/infineontechnologies-idw50e60fksa1-datasheets-6347.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | 3 | EAR99 | PD-CASE | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 187W | 40μA | 115 ns | Standard | 600V | 80A | 240A | 1 | 40μA @ 600V | 2V @ 50A | 80A DC | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-65APS12L-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs65eps08lm3-datasheets-6315.pdf | TO-247-3 | 12 Weeks | TO-247AD | Standard Recovery >500ns, > 200mA (Io) | Standard | 1200V | 100μA @ 1200V | 1.12V @ 65A | 65A | -40°C~150°C |
