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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| CDLL4454 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll4454-datasheets-6355.pdf | DO-213AA | 2 | 6 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | O-LELF-R2 | 200mA | ISOLATED | 100 °C/W | Small Signal =< 200mA (Io), Any Speed | SILICON | 100nA | 50V | 4A | 4 ns | Standard | 50V | 200mA | 0.2A | 100nA @ 50V | 1V @ 10mA | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-6F20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs6f60-datasheets-2910.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 167A | CATHODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12mA | 200V | Standard | 200V | 6A | 1 | 6A | 12mA @ 200V | 1.1V @ 19A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| IDK10G65C5XTMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-idk10g65c5xtma2-datasheets-6357.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 2 | EAR99 | Halogen Free | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 300pF @ 1V 1MHz | 650V | 1.8V @ 10A | 10A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15D120BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-apt15d120bg-datasheets-6334.pdf | TO-247-2 | 2 | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW NOISE, SNUBBER DIODE | 8541.10.00.80 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T2 | 2.5V | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 110A | 260 ns | Standard | 1.2kV | 15A | 1 | 1200V | 250μA @ 1200V | 2.5V @ 15A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-65EPS12L-M3 | Vishay Semiconductor Diodes Division | $3.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs65eps08lm3-datasheets-6315.pdf | TO-247-2 | 12 Weeks | TO-247AD | Standard Recovery >500ns, > 200mA (Io) | Standard | 1200V | 100μA @ 1200V | 1.12V @ 65A | 65A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-72HF60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB (DO-5) | 1.25kA | Standard Recovery >500ns, > 200mA (Io) | 9mA | 600V | Standard | 600V | 70A | 600V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-6FR20M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs6f60-datasheets-2910.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12000μA | Standard, Reverse Polarity | 1kV | 6A | 167A | 1 | 6A | 1000V | 1.1V @ 19A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP29-06AS-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFRED²™ | Surface Mount | AVALANCHE | https://pdf.utmel.com/r/datasheets/ixys-dsep2906astrl-datasheets-5177.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 165W | 600V | 250μA | 35ns | Standard | 250A | 1 | 26pF @ 400V 1MHz | 600V | 250μA @ 600V | 1.94V @ 30A | 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NRVBB4030T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | /files/onsemiconductor-mbrb4030t4g-datasheets-7476.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 4 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | AEC-Q101 | YES | GULL WING | MBRB4030 | 3 | Single | 1 | Rectifier Diodes | R-PSSO-G2 | 40A | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300A | 350μA | 30V | 300A | Schottky | 30V | 40A | 1 | 350μA @ 30V | 550mV @ 40A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| APT60DQ120BG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-apt60dq120bg-datasheets-6344.pdf&product=microsemicorporation-apt60dq120bg-6004856 | 1.2kV | 60A | TO-247-2 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 2 | 29 Weeks | 6.500007g | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 60A | 60A | 3.35V | 540A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 1.2kV | 540A | 320 ns | 320 ns | Standard | 1.2kV | 60A | 1 | 1.2kV | 1200V | 100μA @ 1200V | 3.3V @ 60A | -55°C~175°C | ||||||||||||||||||||||||||||||||
| DPG30I300HA | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/ixys-dpg30i300ha-datasheets-6346.pdf | TO-247-2 | 2 | 20 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 160W | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | 1.63V | 360A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 360A | 300V | 35 ns | 35 ns | Standard | 300V | 30A | 340A | 1 | 1μA @ 300V | 1.34V @ 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| IDW50E60FKSA1 | Infineon Technologies | $3.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | 2014 | /files/infineontechnologies-idw50e60fksa1-datasheets-6347.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | 3 | EAR99 | PD-CASE | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 187W | 40μA | 115 ns | Standard | 600V | 80A | 240A | 1 | 40μA @ 600V | 2V @ 50A | 80A DC | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-65APS12L-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs65eps08lm3-datasheets-6315.pdf | TO-247-3 | 12 Weeks | TO-247AD | Standard Recovery >500ns, > 200mA (Io) | Standard | 1200V | 100μA @ 1200V | 1.12V @ 65A | 65A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-12F60M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs12fr120-datasheets-0536.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | FREE WHEELING DIODE | unknown | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | FAST RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50μA | Standard | 600V | 12A | 150A | 1 | 1μs | 600V | 1.26V @ 38A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4532UR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 1999 | 17 Weeks | 2 | No | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-41HF40 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | Single | 1 | O-MUPM-H1 | 40A | 595A | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 400V | 595A | 400V | Standard | 400V | 40A | 1 | 9mA @ 400V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||
| IDK09G65C5XTMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-idk09g65c5xtma2-datasheets-6306.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | 2 | yes | EAR99 | HIGH RELIABILITY, PD-CASE | Halogen Free | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 650V | 1600μA | 0ns | Silicon Carbide Schottky | 65A | 1 | 270pF @ 1V 1MHz | 650V | 1.6mA @ 650V | 1.8V @ 9A | 9A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-16FR80M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fr60-datasheets-2233.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | 2 | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.23V | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 370A | Standard, Reverse Polarity | 800V | 16A | 1 | 1.23V @ 50A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5806 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemi-jan1n5806-datasheets-9443.pdf | A, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | MIL-19500 | WIRE | Single | 1 | Qualified | 975mV | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3W | 1μA | 150V | 35A | 25 ns | Standard | 150V | 2.5A | 1 | 1A | 25pF @ 10V 1MHz | 1μA @ 150V | 975mV @ 2.5A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| VS-45EPF06L-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs45apf06lm3-datasheets-6299.pdf | TO-247-2 | 12 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | Standard | 600V | 100μA @ 600V | 1.31V @ 45A | 45A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-ETU3006SHM3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vsetu3006shm3-datasheets-6313.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 2V | 200A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 200A | 600V | 45 ns | 45 ns | Standard | 600V | 30A | 1 | 30μA @ 600V | 2V @ 30A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N1188A | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | /files/genesicsemiconductor-1n1188a-datasheets-9445.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N1188 | 200°C | 1 | O-MUPM-D1 | 40A | 800A | SINGLE | CATHODE | GENERAL PURPOSE | 1.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 400V | Standard | 400V | 40A | 1 | 10μA @ 50V | 1.1V @ 40A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-65EPS08L-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs65eps08lm3-datasheets-6315.pdf | TO-247-2 | 12 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 800V | 100μA @ 800V | 1.12V @ 65A | 65A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-HFA08PB60PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Radial, Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vshfa08pb60pbf-datasheets-6317.pdf | TO-247-2 | 15.9mm | 20.7mm | 5.3mm | 2 | 13 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 2 | Single | 1 | Rectifier Diodes | 8A | 60A | CATHODE | EFFICIENCY | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60A | 5μA | 600V | 60A | 600V | 55 ns | 90 ns | Standard | 600V | 8A | 1 | 8A | 5μA @ 600V | 1.7V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| DMA10P1600PZ-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 2 | R-PSSO-G2 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ANODE AND CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100W | 1600V | 10μA | Standard | 110A | 1 | 10A | 4pF @ 400V 1MHz | 1600V | 10μA @ 1600V | 1.26V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-50EPU12L-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Tube | /files/vishaysemiconductordiodesdivision-vs50epu12ln3-datasheets-6320.pdf | TO-247-2 | 14 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 262ns | Standard | 1200V | 330μA @ 1200V | 2.55V @ 50A | 50A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDLL1A20 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5819-datasheets-8782.pdf | DO-213AB, MELF | 2 | 17 Weeks | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | O-LELF-R2 | 1A | ISOLATED | 220 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 20V | Schottky | 20V | 1A | 1A | 0.9pF @ 5V 1MHz | 100μA @ 20V | 600mV @ 1A | ||||||||||||||||||||||||||||||||||||||||||||||
| DSI30-08AC | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-dsi3008ac-datasheets-6324.pdf | ISOPLUS220™ | Lead Free | 2 | 220 | yes | EAR99 | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | DSI30-08 | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T2 | 1.45V | 200A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50μA | 800V | 210A | 800V | Standard | 800V | 30A | 185A | 1 | 50μA @ 800V | 1.45V @ 45A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| UFS380G/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs360je3tr13-datasheets-4385.pdf | DO-215AB, SMC Gull Wing | 20 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | UFS380 | Single | DO-215AB | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 800V | 100A | 60 ns | Standard | 800V | 3A | 800V | 10μA @ 800V | 1.2V @ 3A | 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-45APF06L-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs45apf06lm3-datasheets-6299.pdf | TO-247-3 | 12 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | Standard | 600V | 100μA @ 600V | 1.31V @ 45A | 45A | -40°C~150°C |
