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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Contact Resistance | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-87HF20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.2V | 1.8kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 200V | 1.8kA | 200V | Standard | 200V | 85A | 1 | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-80APF10-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs80apf12m3-datasheets-5895.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 3 | 12 Weeks | 3 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | Common Anode | NOT APPLICABLE | 1 | 80A | 1.35V | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.1kA | 100μA | 1kV | 1.1kA | TO-247AC | 480 ns | Standard | 1kV | 80A | 1 | 1000V | 100μA @ 1000V | 1.35V @ 80A | -40°C~150°C | |||||||||||||||||||||||||||||||||||
| UFS370G/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs360je3tr13-datasheets-4385.pdf | DO-215AB, SMC Gull Wing | 20 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | No | UFS370 | Single | DO-215AB | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 700V | 100A | 60 ns | Standard | 700V | 3A | 700V | 10μA @ 700V | 1.2V @ 3A | 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| UPR20/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-upr40e3tr13-datasheets-4639.pdf | DO-216AA | 1 | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | GULL WING | UPR20 | Single | 1 | S-PSSO-G1 | 2A | 1.25V | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 20A | 50 ns | Standard | 200V | 2A | 1 | 2A | 10μA @ 200V | 1.25V @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| UPR30/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-upr40e3tr13-datasheets-4639.pdf | DO-216AA | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | No | UPR30 | Single | Powermite | 2A | 1.25V | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 300V | 20A | 50 ns | Standard | 300V | 2A | 300V | 10μA @ 300V | 1.25V @ 1A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| UFS350G/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs340je3tr13-datasheets-4401.pdf | DO-215AB, SMC Gull Wing | 20 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | UFS350 | Single | DO-215AB | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 500V | 100A | 50 ns | Standard | 500V | 3A | 500V | 10μA @ 500V | 1.1V @ 3A | 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-72HF100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB (DO-5) | 1.25kA | Standard Recovery >500ns, > 200mA (Io) | 9mA | 1kV | Standard | 1kV | 70A | 1000V | 1.35V @ 220A | 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DPG30I600PM | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | AVALANCHE | TO-220-2 Full Pack, Isolated Tab | 2 | 28 Weeks | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, PD-CASE | IEC-60747 | NO | SINGLE | 150°C | 1 | R-PSFM-T2 | SINGLE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 165W | 600V | 250μA | TO-220AC | 25ns | Standard | 250A | 1 | 26pF @ 400V 1MHz | 600V | 250μA @ 600V | 2.52V @ 30A | 15A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-72HFR100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB (DO-5) | 1.25kA | Standard Recovery >500ns, > 200mA (Io) | 9mA | 1kV | Standard, Reverse Polarity | 1kV | 70A | 1000V | 1.35V @ 220A | 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-71HF20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB | 1.25kA | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 15mA | 200V | Standard | 200V | 70A | 200V | 15mA @ 200V | 1.35V @ 220A | 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-71HFR20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB | 1.25kA | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 15mA | 200V | Standard, Reverse Polarity | 200V | 70A | 200V | 15mA @ 200V | 1.35V @ 220A | 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UFS360G/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs360je3tr13-datasheets-4385.pdf | DO-215AB, SMC Gull Wing | 20 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | UFS360 | Single | DO-215AB | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 600V | 100A | 60 ns | Standard | 600V | 3A | 600V | 10μA @ 600V | 1.2V @ 3A | 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FR16D02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud, Through Hole | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Solder | 75°C | 0°C | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 7 | Straight | 10mOhm | UPPER | 1 | O-MUPM-D1 | 3.96mm | 16A | 225A | SINGLE | CATHODE | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 200V | 200V | 200 ns | 200 ns | Standard | 200V | 16A | 1 | 25μA @ 100V | 900mV @ 16A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| JAN1N5417 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | No | 8541.10.00.80 | MIL-19500/411L | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 80A | 150 ns | Standard | 200V | 3A | 1 | 3A | 1μA @ 200V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| VS-95PFR40T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs95pf80w-datasheets-5784.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB (DO-5) | 2.09kA | Standard Recovery >500ns, > 200mA (Io) | 9mA | 400V | Standard, Reverse Polarity | 400V | 95A | 400V | 1.4V @ 267A | 95A | -55°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-72HF80 | Vishay Semiconductor Diodes Division | $8.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB | 1.25kA | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 9mA | 800V | Standard | 800V | 70A | 800V | 9mA @ 800V | 1.35V @ 220A | 70A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3766 | GeneSiC Semiconductor | $9.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n3766-datasheets-9396.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N3766 | 190°C | 1 | O-MUPM-D1 | 35A | 475A | SINGLE | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 800V | 800V | Standard | 800V | 35A | 1 | 10μA @ 50V | 1.2V @ 35A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-72HFR40 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB (DO-5) | 1.25kA | Standard Recovery >500ns, > 200mA (Io) | 15mA | 400V | Standard, Reverse Polarity | 400V | 70A | 400V | 1.35V @ 220A | 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-16FR20M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fr60-datasheets-2233.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12000μA | Standard, Reverse Polarity | 200V | 16A | 370A | 1 | 200V | 1.23V @ 50A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-41HFR40 | Vishay Semiconductor Diodes Division | $9.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | 190°C | Single | NOT SPECIFIED | 1 | O-MUPM-H1 | 595A | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 400V | Standard, Reverse Polarity | 400V | 40A | 1 | 9mA @ 400V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-25FR40M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs25f40-datasheets-7911.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12000μA | Standard, Reverse Polarity | 400V | 25A | 373A | 1 | 400V | 1.3V @ 78A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6642U | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1996 | /files/microsemicorporation-jantx1n6642u-datasheets-6254.pdf | SQ-MELF, B | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | END | WRAP AROUND | 2 | Single | 1 | Qualified | 300mA | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.75W | 500nA | 75V | 2.5A | 20 ns | Standard | 75V | 300mA | 0.3A | 5pF @ 0V 1MHz | 500nA @ 75V | 1.2V @ 100mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| FR12G02 | GeneSiC Semiconductor | $10.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 180A | SINGLE | CATHODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 400V | 400V | 200 ns | 200 ns | Standard | 400V | 12A | 1 | 25μA @ 100V | 800mV @ 12A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-6FR100M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs6f60-datasheets-2910.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12000μA | Standard, Reverse Polarity | 1kV | 6A | 167A | 1 | 6A | 1000V | 1.1V @ 19A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| FR16D05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 16A | 225A | SINGLE | CATHODE | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 200V | 200V | 500 ns | 500 ns | Standard | 200V | 16A | 1 | 25μA @ 100V | 1.1V @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| FR12B02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 180A | SINGLE | CATHODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 100V | 100V | 200 ns | 200 ns | Standard | 100V | 12A | 1 | 25μA @ 100V | 800mV @ 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-40HFR160 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 160°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 40A | 1.5V | 595A | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 595A | 4.5mA | 1.6V | 595A | 1.6kV | Standard, Reverse Polarity | 1.6kV | 40A | 1 | 1600V | 4.5mA @ 1600V | 1.5V @ 125A | -65°C~160°C | ||||||||||||||||||||||||||||||||||||||
| S40Y | GeneSiC Semiconductor | $10.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 150°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 40A | 1.1V | 595A | CATHODE | GENERAL PURPOSE | 1.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.6kV | 1.6kV | Standard | 1.6kV | 40A | 1 | 1600V | 10μA @ 100V | 1.1V @ 40A | -65°C~160°C | |||||||||||||||||||||||||||||||||||||||
| VS-25F60M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs25f40-datasheets-7911.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12000μA | Standard | 600V | 25A | 373A | 1 | 600V | 1.3V @ 78A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| FR16G02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 16A | 225A | SINGLE | CATHODE | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 400V | 400V | 200 ns | 200 ns | Standard | 400V | 16A | 1 | 25μA @ 100V | 900mV @ 16A | -65°C~150°C |
