Products
Manufacturer
RFQ
NEWS
ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N1188A | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | /files/genesicsemiconductor-1n1188a-datasheets-9445.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N1188 | 200°C | 1 | O-MUPM-D1 | 40A | 800A | SINGLE | CATHODE | GENERAL PURPOSE | 1.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 400V | Standard | 400V | 40A | 1 | 10μA @ 50V | 1.1V @ 40A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-65EPS08L-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs65eps08lm3-datasheets-6315.pdf | TO-247-2 | 12 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 800V | 100μA @ 800V | 1.12V @ 65A | 65A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-HFA08PB60PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Radial, Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vshfa08pb60pbf-datasheets-6317.pdf | TO-247-2 | 15.9mm | 20.7mm | 5.3mm | 2 | 13 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 2 | Single | 1 | Rectifier Diodes | 8A | 60A | CATHODE | EFFICIENCY | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60A | 5μA | 600V | 60A | 600V | 55 ns | 90 ns | Standard | 600V | 8A | 1 | 8A | 5μA @ 600V | 1.7V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| DMA10P1600PZ-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 2 | R-PSSO-G2 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ANODE AND CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100W | 1600V | 10μA | Standard | 110A | 1 | 10A | 4pF @ 400V 1MHz | 1600V | 10μA @ 1600V | 1.26V @ 10A | 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-50EPU12L-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Tube | /files/vishaysemiconductordiodesdivision-vs50epu12ln3-datasheets-6320.pdf | TO-247-2 | 14 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 262ns | Standard | 1200V | 330μA @ 1200V | 2.55V @ 50A | 50A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-12FR120M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs12fr120-datasheets-0536.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12000μA | Standard, Reverse Polarity | 1.2kV | 12A | 280A | 1 | 1200V | 1.26V @ 38A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| IDP2302XUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 14 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UFS330G/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs340je3tr13-datasheets-4401.pdf | DO-215AB, SMC Gull Wing | 20 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | UFS330 | Single | DO-215AB | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 300V | 100A | 50 ns | Standard | 300V | 3A | 300V | 10μA @ 300V | 1.1V @ 3A | 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| UFS315G/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs320je3tr13-datasheets-4376.pdf | DO-215AB, SMC Gull Wing | 20 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | UFS315 | Single | DO-215AB | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 150V | 100A | 30 ns | Standard | 150V | 3A | 150V | 10μA @ 150V | 950mV @ 3A | 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N3595-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/241 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-204AH, DO-35, Axial | Contains Lead | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 150mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 1nA | 125V | 4A | 3 μs | Standard | 0.15A | 1nA @ 125V | 1V @ 200mA | 150mA DC | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| VS-72HFR80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB | 1.25kA | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 9mA | 800V | Standard, Reverse Polarity | 800V | 70A | 800V | 9mA @ 800V | 1.35V @ 220A | 70A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SD165SC150B.T1 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1000pF @ 5V 1MHz | 150V | 1mA @ 150V | 890mV @ 30A | 30A | -55°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SD175SB45A.T1 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1600pF @ 5V 1MHz | 45V | 800μA @ 45V | 640mV @ 30A | 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5711-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/444 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5712-datasheets-5772.pdf | DO-204AH, DO-35, Axial | Contains Lead | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/444 | WIRE | 2 | Single | 1 | Qualified | 33mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 70V | Schottky | 70V | 33mA | 0.033A | 2pF @ 0V 1MHz | 200nA @ 50V | 410mV @ 1mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
| S40YR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 150°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 40A | 1.1V | 595A | ANODE | GENERAL PURPOSE | 1.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.6kV | 1.6kV | Standard, Reverse Polarity | 1.6kV | 40A | 1 | 1600V | 10μA @ 100V | 1.1V @ 40A | -65°C~160°C | ||||||||||||||||||||||||||||||||||||||||
| FR12D02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 180A | SINGLE | CATHODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 200V | 200V | 200 ns | 200 ns | Standard | 200V | 12A | 1 | 25μA @ 100V | 800mV @ 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| SD175SB45B.T1 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1600pF @ 5V 1MHz | 45V | 800μA @ 45V | 640mV @ 30A | 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5806US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/477F | END | WRAP AROUND | 2 | Single | 1 | Qualified | 2.5A | 975mV | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 150V | 35A | 25 ns | Standard | 150V | 1A | 1 | 25pF @ 10V 1MHz | 1μA @ 150V | 875mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| UFS305G/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs320je3tr13-datasheets-4376.pdf | DO-215AB, SMC Gull Wing | 20 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | UFS305 | Single | DO-215AB | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 50V | 100A | 30 ns | Standard | 50V | 3A | 50V | 10μA @ 50V | 950mV @ 3A | 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| UFS310G/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs320je3tr13-datasheets-4376.pdf | DO-215AB, SMC Gull Wing | 20 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | UFS310 | Single | DO-215AB | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 100V | 100A | 30ns | Standard | 100V | 3A | 100V | 10μA @ 100V | 950mV @ 3A | 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-ETH3006SHM3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vseth30061hm3-datasheets-6263.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 180A | CATHODE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 600V | 26 ns | 35 ns | Standard | 600V | 30A | 1 | 30μA @ 600V | 2.65V @ 30A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-HFA25TB60STLHM3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFRED® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vshfa25tb60shm3-datasheets-5500.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | EAR99 | PD-CASE | unknown | 8541.10.00.80 | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 125W | 20μA | 50 ns | Standard | 600V | 25A | 1 | 600pF @ 5V 1MHz | 600V | 20μA @ 600V | 1.7V @ 25A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-87HFR10 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 180°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 100V | Standard, Reverse Polarity | 100V | 85A | 1800A | 1 | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-EPX6007L-N3 | Vishay Semiconductor Diodes Division | $3.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsepx6007ln3-datasheets-6294.pdf | TO-247-2 | 14 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 42ns | Standard | 650V | 30μA @ 650V | 2.5V @ 60A | 60A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR16K05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 16A | 225A | SINGLE | CATHODE | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 800V | 800V | 500 ns | 500 ns | Standard | 800V | 16A | 1 | 25μA @ 100V | 1.1V @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-ETH3006-1HM3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vseth30061hm3-datasheets-6263.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 14 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSIP-T3 | 180A | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 600V | 26 ns | 35 ns | Standard | 600V | 30A | 1 | 30μA @ 600V | 2.65V @ 30A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| FR12J02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud, Through Hole | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Solder | 75°C | 0°C | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 7 | Straight | EAR99 | 8541.10.00.80 | UPPER | 1 | O-MUPM-D1 | 3.96mm | 12A | 180A | SINGLE | CATHODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 600V | 600V | 250 ns | 250 ns | Standard | 600V | 12A | 1 | 25μA @ 100V | 800mV @ 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| SD175SA30A.T1 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 2200pF @ 5V 1MHz | 30V | 4mA @ 30V | 490mV @ 30A | 30A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-87HF20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.2V | 1.8kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 200V | 1.8kA | 200V | Standard | 200V | 85A | 1 | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-80APF10-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs80apf12m3-datasheets-5895.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 3 | 12 Weeks | 3 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | Common Anode | NOT APPLICABLE | 1 | 80A | 1.35V | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.1kA | 100μA | 1kV | 1.1kA | TO-247AC | 480 ns | Standard | 1kV | 80A | 1 | 1000V | 100μA @ 1000V | 1.35V @ 80A | -40°C~150°C |
